scholarly journals Effect of Sr Doping on Structural and Transport Properties of Bi2Te3

Materials ◽  
2021 ◽  
Vol 14 (24) ◽  
pp. 7528
Author(s):  
Yurii G. Selivanov ◽  
Victor P. Martovitskii ◽  
Mikhail I. Bannikov ◽  
Aleksandr Y. Kuntsevich
Keyword(s):  
Molecular Beam ◽  
Structural Parameters ◽  
High Mobility ◽  
Bulk Crystals ◽  
Structural Position ◽  
Dopant Content ◽  
Type Conductivity ◽  
P Type ◽  
Lattice Matched ◽  
Shed Light

Search for doped superconducting topological insulators is of prime importance for new quantum technologies. We report on fabrication of Sr-doped Bi2Te3 single crystals. We found that Bridgman grown samples have p-type conductivity in the low 1019 cm−3, high mobility of 4000 cm2V−1s−1, crystal structure independent on nominal dopant content, and no signs of superconductivity. We also studied molecular beam epitaxy grown SrxBi2−xTe3 films on lattice matched (1 1 1) BaF2 polar surface. Contrary to the bulk crystals thin films have n-type conductivity. Carrier concentration, mobility and c-lattice constant demonstrate pronounced dependence on Sr concentration x. Variation of the parameters did not lead to superconductivity. We revealed, that transport and structural parameters are governed by Sr dopants incorporation in randomly inserted Bi bilayers into the parent matrix. Thus, our data shed light on the structural position of dopant in Bi2Te3 and should be helpful for further design of topological insulator-based superconductors.

GalnAsSb Materials for Thermophotovoltaics

1996 ◽  
Vol 450 ◽  
Author(s):  
C. A. Wang ◽  
G. W. Turner ◽  
M. J. Manfra ◽  
H. K. Choi ◽  
D. L. Spears
Keyword(s):  
Room Temperature ◽  
Molecular Beam ◽  
Hole Concentration ◽  
Organometallic Vapor Phase Epitaxy ◽  
Room Temperature Photoluminescence ◽  
P Type ◽  
First Time ◽  
Lattice Matched ◽  
Comparable Quality ◽  
Peak Emission

ABSTRACTGai1−xInxASySb1-y (0.06 < x < 0.18, 0.05 < y < 0.14) epilayers were grown lattice-matched to GaSb substrates by low-pressure organometallic vapor phase epitaxy (OMVPE) using triethylgallium, trimethylindium, tertiarybutylarsine, and trimethylantimony. These epilayers have a mirror-like surface morphology, and exhibit room temperature photoluminescence (PL) with peak emission wavelengths (λP,300K) out to 2.4 μm. 4K PL spectra have a full width at half-maximum of 11 meV or less for λP,4K < 2.1 μm (λP,300K = 2.3 μm). Nominally undoped layers are p-type with typical 300K hole concentration of 9 × 1015 cm−3 and mobility ∼ 450 to 580 cm2/V-s for layers grown at 575°C. Doping studies are reported for the first time for GalnAsSb layers doped n type with diethyltellurium and p type with dimethylzinc. Test diodes of p-GalnAsSb/n-GaSb have an ideality factor that ranges from 1.1 to 1.3. A comparison of electrical, optical, and structural properties of epilayers grown by molecular beam epitaxy indicates OMVPE-grown layers are of comparable quality.

p-type conductivity control of ZnSe with insertion of ZnTe:Li submonolayers in metalorganic molecular-beam epitaxy

1998 ◽  
Vol 84 (11) ◽  
pp. 6100-6104 ◽  
Author(s):  
J. Hirose ◽  
K. Uesugi ◽  
M. Hoshiyama ◽  
T. Numai ◽  
I. Suemune ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Type Conductivity ◽  
Metalorganic Molecular Beam Epitaxy ◽  
P Type

A Monolithic White-Light LED Based on GaN Doped with Be

2014 ◽  
Vol 93 ◽  
pp. 264-269 ◽  
Author(s):  
Henryk Teisseyre ◽  
Michal Bockowski ◽  
Toby David Young ◽  
Szymon Grzanka ◽  
Yaroslav Zhydachevskii ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
White Light ◽  
Light Emission ◽  
Light Emitting Diode ◽  
Yellow Emission ◽  
Bulk Crystals ◽  
Light Emitting ◽  
Type Conductivity ◽  
P Type ◽  
Colour Rendering

In this communication, the use of gallium nitride doped with beryllium as an efficient converter for white light emitting diode is proposed. Until now beryllium in this material was mostly studied as a potential p-type dopant. Unfortunately, the realization of p-type conductivity in such a way seems impossible. However, due to a very intensive yellow emission, bulk crystals doped with beryllium can be used as light converters. In this communication, it is demonstrated that realisation of such diode is possible and realisation of a colour rendering index is close to that necessary for white light emission.

High-mobility Sb-doped p-type ZnO by molecular-beam epitaxy

2005 ◽  
Vol 87 (15) ◽  
pp. 152101 ◽  
Author(s):  
F. X. Xiu ◽  
Z. Yang ◽  
L. J. Mandalapu ◽  
D. T. Zhao ◽  
J. L. Liu ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
High Mobility ◽  
P Type

Photoluminescence, Capacitance-Voltage, and Variable Field Hall Effect Measurements of Mg-Doped InN

2006 ◽  
Vol 955 ◽  
Author(s):  
Craig Hartley Swartz ◽  
Steven M. Durbin ◽  
Roger J. Reeves ◽  
Katherine Prince ◽  
John V. Kennedy ◽  
...  
Keyword(s):  
Hall Effect ◽  
Molecular Beam ◽  
Variable Magnetic Field ◽  
Surface Electron ◽  
Type Layer ◽  
Capacitance Voltage ◽  
Hall Effect Measurements ◽  
P Type ◽  
Lattice Matched ◽  
Mg Doped

ABSTRACTVariable magnetic field Hall effect, photoluminescence (PL) and capacitance-voltage (CV) analysis have been used to study InN layers grown by plasma assisted molecular beam epitaxy. All three techniques reveal evidence of a buried p-type layer beneath a surface electron accumulation layer in heavily Mg-doped samples. The use of lattice-matched Yttria-stablized Zirconia substrates also provides evidence of a p-type layer.

Ge Related Deep Level Luminescence in InGaAs Lattice Matched to InP

1989 ◽  
Vol 163 ◽  
Author(s):  
S.S. Chandvankar ◽  
A.K. Srivastava ◽  
B.M. Arora ◽  
D.K. Sharma
Keyword(s):  
Low Temperature ◽  
Carrier Concentration ◽  
Lower Energy ◽  
Deep Level ◽  
Peak Position ◽  
Type Conductivity ◽  
Pl Spectra ◽  
P Type ◽  
Lattice Matched ◽  
Ge Doping

AbstractPhotoluminescence and Hall measurements are reported on Ge doped InGaAs layers lattice matched to InP. Ge doping of these samples results in highly compensated material, with the highest Ge content sample giving a p type conductivity with carrier concentration of 5 ×1017 cm-3. Low temperature PL spectra of these samples show a broad peak from 0.55 to 0.77 eV due to Ge. The peak of luminescence shifts to lower energy with increasing Ge content. The peak position shifts to higher energy with increasing excitation like in a D-A pair transition. The PL spectra have been explained on the basis of a model which assumes tail states near the band edges due to disorder produced by the presence of Ge in the lattice.

Combining High Hole Concentration in p-GaN and High Mobility in u-GaN for High p-Type Conductivity in a p-GaN/u-GaN Alternating-Layer Nanostructure

2017 ◽  
Vol 64 (1) ◽  
pp. 115-120 ◽  
Author(s):  
Hao-Tsung Chen ◽  
Chia-Ying Su ◽  
Charng-Gan Tu ◽  
Yu-Feng Yao ◽  
Chun-Han Lin ◽  
...  
Keyword(s):  
Hole Concentration ◽  
High Mobility ◽  
Type Conductivity ◽  
High Hole Concentration ◽  
P Type

Low - Temperature Defect - Induced Aging of GaAs Grown by Molecular Beam Epitaxy

1990 ◽  
Vol 184 ◽  
Author(s):  
I. Szafranek ◽  
S. A. Stockman ◽  
M. Szafranek ◽  
M. J. McCollum ◽  
M. A. Plano ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
Variable Temperature ◽  
High Mobility ◽  
Hole Mobility ◽  
Acceptor Pair ◽  
Hall Effect Measurements ◽  
One Year ◽  
P Type

ABSTRACTDegradation in optical and electrical properties has been observed for high-purity and high-mobility p-type GaAs layers which contain significant concentrations of an unidentified shallow acceptor-like defect, labeled “A”, that is frequently incorporated in crystals grown by molecular beam epitaxy. Low-temperature photoluminescence and variable temperature Hall-effect measurements were employed to monitor the aging process in samples stored for about one year at room temperature. Profound changes in the exciton recombination spectra, indicative of increasing concentration of the “A” defect, have been accompanied by a decrease in hole mobility and an increase in carrier concentration. These results are discussed in the context of the acceptor-pair defect model, originally proposed by Eaves and Halliday [J. Phys. C: Solid State Phys. 17, L705 (1984)].

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