scholarly journals Ion Microprobe Study of the Polarization Quenching Techniques in Single Crystal Diamond Radiation Detectors

Materials ◽  
2022 ◽  
Vol 15 (1) ◽  
pp. 388
Author(s):  
Mauricio R. Ramos ◽  
Andreo Crnjac ◽  
Donny Cosic ◽  
Milko Jakšić
Keyword(s):  
Single Crystal ◽  
Collection Efficiency ◽  
Ion Beam ◽  
Extreme Environments ◽  
Chemical Vapor ◽  
Radiation Detectors ◽  
Nuclear Microprobe ◽  
Charge Collection Efficiency ◽  
Single Crystal Diamond ◽  
Vapor Deposition Technique

Synthetic single crystal diamond grown using the chemical vapor deposition technique constitutes an extraordinary candidate material for monitoring radiation in extreme environments. However, under certain conditions, a progressive creation of space charge regions within the crystal can lead to the deterioration of charge collection efficiency. This phenomenon is called polarization and represents one of the major drawbacks associated with using this type of device. In this study, we explore different techniques to mitigate the degradation of signal due to polarization. For this purpose, two different diamond detectors are characterized by the ion beam-induced charge technique using a nuclear microprobe, which utilizes MeV energy ions of different penetration depths to probe charge transport in the detectors. The effect of polarization is analyzed by turning off the bias applied to the detector during continuous or discontinuous irradiation, and also by alternating bias polarity. In addition, the beneficial influence of temperature for reducing the effect of polarization is also observed. Finally, the effect of illuminating the detector with light is also measured. Our experimental results indicate that heating a detector or turning off the bias, and then applying it during continuous irradiation can be used as satisfactory methods for recovering the CCE value close to that of a prepolarized state. In damaged regions, illumination with white light can be used as a standard method to suppress the strength of polarization induced by holes.

Comparative Studies of Ionizing Radiation Detectors Made on the Basis of Various Types of Diamond Plates

2021 ◽  
Vol 23 (2) ◽  
pp. 68-75
Author(s):  
Altukhov A.A. ◽  
Keyword(s):  
Ionizing Radiation ◽  
Single Crystal ◽  
Comparative Studies ◽  
Collection Efficiency ◽  
Radiation Detectors ◽  
Charge Collection ◽  
Alpha Radiation ◽  
Charge Collection Efficiency ◽  
Polarization Phenomena

The results of experiments on the study of polarization phenomena and the charge collection efficiency in test structures of diamond ionizing radiation detectors using diamond plates of various types, including single-crystal NRNT-type, single-crystal CVD-type, as well as polycrystalline type, when exposed to alpha-radiation with an energy of 5.5 MeV are presented. Studies have demonstrated the existence of a number of problems with the device quality of diamond plates that affect the performance of spec-trometric-type detectors.

Diamond Field-Effect Transistors

1994 ◽  
Vol 339 ◽  
Author(s):  
David L. Dreifus ◽  
Alison J. Tessmer ◽  
Joseph S. Holmes ◽  
Chien-Teh Kao ◽  
Dean M. Malta ◽  
...  
Keyword(s):  
Single Crystal ◽  
Field Effect ◽  
Microwave Plasma ◽  
Field Effect Transistors ◽  
Variable Temperature ◽  
Chemical Vapor ◽  
Temperature Cycling ◽  
Oxide Semiconductor ◽  
Single Crystal Diamond ◽  
Vapor Deposition Technique

ABSTRACTMetal-oxide-semiconductor field-effect transistors (FETs) have been fabricated using B-doped diamond thin films deposited on polycrystalline, (100) highly-oriented, and single crystal diamond insulating substrates. Diamond films were grown using a microwave plasma chemical vapor deposition technique. Various electrical and materials characterization techniques were employed to confirm that the films exhibited properties suitable for FET fabrication. Devices with gate lengths and widths of 2 μm and 314 μm respectively, were processed using standard photolithography. Silicon dioxide was used as the gate dielectric. Current-voltage characteristics of these devices have been measured during variable temperature cycling in air. Devices fabricated on the randomly oriented polycrystalline diamond substrates have been operated to 285°C. Field-effect transistors fabricated using the highly-oriented diamond substrates have been characterized to 400°C. Single crystal diamond devices exhibited saturation and pinch-off of the channel current at temperatures up to 500°C. These devices have been biased in amplifier circuit configurations that have been characterized from 20 Hz to 1 MHz. Single crystal FETs exhibited voltage gain over an extended temperature range. Transconductances as large as 1.7 mS/mm have been observed. The electronic properties, fabrication technologies, and performance of devices fabricated on the three diamond substrate materials will be discussed and compared.

Ion beam analysis of single crystal CVD diamond

2005 ◽  
Vol 908 ◽  
Author(s):  
Claudio Manfredotti ◽  
Alessandro Lo GIudice ◽  
Stiepko Medunic ◽  
Milko Jaksic ◽  
Elisabetta Colombo
Keyword(s):  
Single Crystal ◽  
Energy Resolution ◽  
Collection Efficiency ◽  
Ion Beam ◽  
Cvd Diamond ◽  
Polycrystalline Materials ◽  
Beam Diameter ◽  
Spatial Homogeneity ◽  
Charge Collection Efficiency ◽  
Polarization Effects

AbstractIBIC ( Ion Beam Induced Charge ) represents a powerful method to investigate the homogeneity of the response of semiconductor nuclear detectors from the point of view of charge collection efficiency ( cce ) with a spatial resolution of few microns. Polycrystalline materials like CVD diamond displayed in the past non-uniform cce maps, in which it was easy to notice the appearance of single grains. Moreover, the presence of traps in the defective regions around the grain boundaries caused strong polarization effects which in practice impeded in many cases to get reasonable cce maps. With the availability of new homoepitaxially grown CVD diamond samples the situation is now very much improved : maps are very uniform and the non-homogeneous broadening of peaks with the consequent worsening of energy resolution is extremely reduced.In this paper, both proton and alpha microbeams of energies 3 and 4.5 MeV were used for the investigation of single crystal CVD homoepitaxial diamond, with a beam diameter spot of about 1.2 mm over scanned areas of more than 1 mm2, sampled in regions of interest from 450 um × 450 um down to 150 um × 150 um and below. The good spatial homogeneity together with a cce value of about 50 % made it possible to reach energy resolutions of 1.3 % FWHM, including a not negligible electrical noise. These values compare quite well with Si performances, which in the same conditions reached 0.85% FWHM. The stability and reproducibility of the detector was very good without any preliminary priming and polarization effects were reduced to a minimum. The detector was pushed in some cases up to 700 cps with apparently no cce losses and with only a slight worsening of energy resolution.

He+ ion damage in 4H-SiC studied by charge collection efficiency measurements.

2003 ◽  
Vol 792 ◽  
Author(s):  
Roberta Nipoti ◽  
Cesare Donolato
Keyword(s):  
Collection Efficiency ◽  
Ion Beam ◽  
Charge Collection ◽  
Nuclear Microprobe ◽  
Ion Microprobe ◽  
Charge Collection Efficiency ◽  
Interface Recombination ◽  
Carrier Recombination ◽  
Interface Recombination Velocity ◽  
Recombination Velocity

ABSTRACTThe nuclear microprobe facility of the Italian National Laboratories of Legnaro was used for an Ion Beam Induced Charge Collection (IBIC or IBICC) experiment which measured the charge collection of a 4H-SiC Schottky diode irradiated with 2 MeV He+ at increasing doses. The experiment was arranged so as to obtain a statistics of about 1400 events per each He+ ion from the 1st to the 500th one on the ion microprobe spot (1.5 × 1.5 μm2). These figures correspond to He+ fluence values in the range 107−1011 ions/cm2. The charge collection of the diode was almost constant from the 1st to the 10th He+ ion, i.e. up to a fluence of 109 ions/cm2, and then monotonically decreased for the subsequent ions. The SiC device collection efficiency was modelled by representing the electrical effects of the damage produced by ions as a planar interface region of given carrier recombination velocity at the depth of the damage peak. Experimental and computed data scale one to the other assuming that the interface recombination velocity and He+ fluence are linearly related.

Hydrogen Ion Beam Processing of Single Crystal Diamond Chips

1994 ◽  
Vol 354 ◽  
Author(s):  
Shuji Kiyohara ◽  
Iwao Miyamoto
Keyword(s):  
Surface Roughness ◽  
Single Crystal ◽  
Incidence Angle ◽  
Ion Beam ◽  
Etching Rate ◽  
Hydrogen Ion ◽  
Hydrogen Ions ◽  
Ion Beam Etching ◽  
Single Crystal Diamond ◽  
Before And After

AbstractIn order to apply ion beam etching with hydrogen ions to the ultra-precision processing of diamond tools, hydrogen ion beam etching characteristics of single crystal diamond chips with (100) face were investigated. The etching rate of diamond for 500 eV and 1000 eV hydrogen ions increases with the increase of the ion incidence angle, and eventually reaches a maximum at the ion incidence angle of approximately 50°, then may decrease with the increase of the ion incidence angle. The dependence of the etching rate on the ion incidence angle of hydrogen ions is fairly similar to that obtained with argon ions. Furthermore, the surface roughness of diamond chips before and after hydrogen ion beam etching was evaluated using an atomic force microscope. Consequently, the surface roughness after hydrogen ion beam etching decreases with the increase of the ion incidence angle within range of the ion incidence angle of 60°.

Lateral outward growth of single-crystal diamond by two different structures of microwave plasma reactors

CrystEngComm ◽  
2022 ◽  
Author(s):  
Wei Cao ◽  
Zhibin Ma ◽  
Hongyang Zhao ◽  
Deng Gao ◽  
Qiuming Fu
Keyword(s):  
Chemical Vapor Deposition ◽  
Single Crystal ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Lateral Growth ◽  
Plasma Reactors ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition ◽  
Single Crystal Diamond

On a semi-open holder, the homoepitaxial lateral growth of single-crystal diamond (SCD) was carried out via microwave plasma chemical vapor deposition (MPCVD). By tuning and optimizing two different structures of...

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