scholarly journals Improvements of Electrical Characteristics in Poly-Si Nanowires Thin-Film Transistors with External Connection of a BiFeO3 Capacitor

Membranes ◽  
2021 ◽  
Vol 11 (10) ◽  
pp. 758
Author(s):  
Tsung-Kuei Kang ◽  
Yu-Yu Lin ◽  
Han-Wen Liu ◽  
Che-Li Lin ◽  
Po-Jui Chang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Thin Film Transistor ◽  
Sol Gel ◽  
Potential Candidate ◽  
Electrical Characteristics ◽  
Si Nanowires ◽  
Major Mechanism ◽  
Wide Range ◽  
External Connection

By a sol–gel method, a BiFeO3 (BFO) capacitor is fabricated and connected with the control thin film transistor (TFT). Compared with a control thin-film transistor, the proposed BFO TFT achieves 56% drive current enhancement and 7–28% subthreshold swing (SS) reduction. Moreover, the effect of the proposed BiFeO3 capacitor on IDS-VGS hysteresis in the BFO TFT is 0.1–0.2 V. Because dVint/dVGS > 1 is obtained at a wide range of VGS, it reveals that the incomplete dipole flipping is a major mechanism to obtain improved SS and a small hysteresis effect in the BFO TFT. Experimental results indicate that sol-gel BFO TFT is a potential candidate for digital application.

On the anomaly in the electrical characteristics of thin film transistors with multi-layered sol-gel processed ZnO

2019 ◽  
Vol 672 ◽  
pp. 152-156 ◽  
Author(s):  
Vahid Mirkhani ◽  
Kosala Yapabandara ◽  
Shiqiang Wang ◽  
Min Prasad Khanal ◽  
Sunil Uprety ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Sol Gel ◽  
Electrical Characteristics

Green solvents for organic thin-film transistor processing

2020 ◽  
Vol 8 (17) ◽  
pp. 5786-5794 ◽  
Author(s):  
Dongil Ho ◽  
Jeongyeon Lee ◽  
Sangyun Park ◽  
Yonghan Park ◽  
Kwanghee Cho ◽  
...  
Keyword(s):  
Thin Film ◽  
Organic Semiconductors ◽  
Thin Film Transistors ◽  
Thin Film Transistor ◽  
Organic Thin Film Transistors ◽  
Green Solvents ◽  
Organic Thin Film ◽  
Organic Thin Film Transistor ◽  
Wide Range

A wide range of green solvents are explored to process TIPS-PEN (6,13-bis(triisopropylsilylethynyl)pentacene), and several other p- and n-type organic semiconductors for their potential generality in fabricating organic thin-film transistors.

Performance modification in solution-processed SnZnO thin film transistor

2010 ◽  
Vol 1247 ◽  
Author(s):  
Dong Lim Kim ◽  
Doo Na Kim ◽  
You Seung Rim ◽  
Si Joon Kim ◽  
Hyun Jae Kim
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistors ◽  
High Performance ◽  
Annealing Temperature ◽  
Thin Film Transistor ◽  
Solution Process ◽  
Molar Ratio ◽  
Electrical Characteristics ◽  
Solution Processed

AbstractTin zinc oxide (SnZnO) thin film transistors (TFTs) with different component fraction fabricated by solution process were reported. Sn chloride and Zn acetate were used as precursor and the maximum annealing temperature was 500°C. The electrical characteristics of TFTs were acutely affected by the molar ratio between Sn and Zn in the lattice, and showed the highest mobility and on-to-off ratio of about 17 cm2/Vs and 2×106, respectively. The origins of the high performance were traced through both structural and electrical aspects. Sn was generally considered to offer carrier path by superposition of s orbital, but it was found that the increase of Sn fraction only below specific value in lattice contributed to increase mobility, which could be explained by the structural distortion and the defect generation. Zn atoms introduced in the lattice were necessary to control both mobility and carrier concentration. From these results, the solution-processed SnZnO TFT with high performance was suggested.

Effect of Electrode Materials on the Electrical Characteristics of Amorphous Indium-Tin-Gallium-Zinc Oxide Thin-Film Transistors

2021 ◽  
Vol 21 (8) ◽  
pp. 4325-4329
Author(s):  
Hosang Lee ◽  
Kyoungah Cho ◽  
Sangsig Kim
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Electrode Materials ◽  
Thin Film Transistor ◽  
Channel Length ◽  
Oxide Thin Film ◽  
Electrical Characteristics ◽  
Drain Electrode ◽  
Channel Region ◽  
Effective Channel

In this study, we investigated the effect of electrode materials on the electrical characteristics of coplanar top-gate a-ITGZO thin-film transistors, in which the gate, source, and drain electrodes were made of the same metal, Ti or Al. The field-effect mobilities of the a-ITGZO thin-film transistors with Ti and Al electrodes were 35.2 and 20.1 cm2/V·s, respectively, and the threshold voltage of the a-ITGZO thin-film transistor with Ti electrodes was −0.4 V, whereas that of the transistor with Al electrodes was −1.8; this shift is attributed to the fact that Ti has a higher work function than Al. When Ti was used as the source and drain electrode material, the channel resistance and effective channel length were reduced owing to the penetration of metal atoms into the channel region from the edge of the source/drain electrodes.

scholarly journals Influence of Active Channel Layer Thickness on SnO2 Thin-Film Transistor Performance

Electronics ◽  
2021 ◽  
Vol 10 (2) ◽  
pp. 200
Author(s):  
Do Won Kim ◽  
Hyeon Joong Kim ◽  
Changmin Lee ◽  
Kyoungdu Kim ◽  
Jin-Hyuk Bae ◽  
...  
Keyword(s):  
Thin Film ◽  
Field Effect ◽  
Thin Film Transistor ◽  
Sol Gel ◽  
Precursor Concentration ◽  
Sno2 Thin Film ◽  
Field Effect Mobility ◽  
Si Substrates ◽  
Channel Layer ◽  
Active Channel

Sol-gel processed SnO2 thin-film transistors (TFTs) were fabricated on SiO2/p+ Si substrates. The SnO2 active channel layer was deposited by the sol-gel spin coating method. Precursor concentration influenced the film thickness and surface roughness. As the concentration of the precursor was increased, the deposited films were thicker and smoother. The device performance was influenced by the thickness and roughness of the SnO2 active channel layer. Decreased precursor concentration resulted in a fabricated device with lower field-effect mobility, larger subthreshold swing (SS), and increased threshold voltage (Vth), originating from the lower free carrier concentration and increase in trap sites. The fabricated SnO2 TFTs, with an optimized 0.030 M precursor, had a field-effect mobility of 9.38 cm2/Vs, an SS of 1.99, an Ion/Ioff value of ~4.0 × 107, and showed enhancement mode operation and positive Vth, equal to 9.83 V.

Wide range modulation of synaptic weight in thin-film transistors with hafnium oxide gate insulator and indium-zinc oxide channel layer for artificial synapse application

Nanoscale ◽  
2021 ◽  
Author(s):  
Keonwon Beom ◽  
Jimin Han ◽  
Hyun-Mi Kim ◽  
Tae-Sik Yoon
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistors ◽  
Hafnium Oxide ◽  
Synaptic Weight ◽  
Drain Current ◽  
Gate Insulator ◽  
Channel Layer ◽  
Indium Zinc Oxide ◽  
Wide Range

Wide range synaptic weight modulation with a tunable drain current was demonstrated in thin-film transistors (TFTs) with a hafnium oxide (HfO2−x) gate insulator and an indium-zinc oxide (IZO) channel layer...

scholarly journals Improved Negative Bias Stress Stability of Sol–Gel-Processed Li-Doped SnO2 Thin-Film Transistors

Electronics ◽  
2021 ◽  
Vol 10 (14) ◽  
pp. 1629
Author(s):  
Hyeon-Joong Kim ◽  
Do-Won Kim ◽  
Won-Yong Lee ◽  
Sin-Hyung Lee ◽  
Jin-Hyuk Bae ◽  
...  
Keyword(s):  
Thin Film ◽  
Oxygen Vacancy ◽  
Thin Film Transistors ◽  
Sol Gel ◽  
Sno2 Thin Film ◽  
Negative Bias ◽  
Semiconductor Films ◽  
Saturation Regime ◽  
Si Substrates ◽  
Ionic Size

In this study, sol–gel-processed Li-doped SnO2-based thin-film transistors (TFTs) were fabricated on SiO2/p+ Si substrates. The influence of Li dopant (wt%) on the structural, chemical, optical, and electrical characteristics was investigated. By adding 0.5 wt% Li dopant, the oxygen vacancy formation process was successfully suppressed. Its smaller ionic size and strong bonding strength made it possible for Li to work as an oxygen vacancy suppressor. The fabricated TFTs consisting of 0.5 wt% Li-doped SnO2 semiconductor films delivered the field-effect mobility in a 2.0 cm2/Vs saturation regime and Ion/Ioff value of 1 × 108 and showed enhancement mode operation. The decreased oxygen vacancy inside SnO2 TFTs with 0.5 wt% Li dopant improved the negative bias stability of TFTs.

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