scholarly journals Probing the Deformation Mechanisms of Nanocrystalline Silver by In-Situ Tension and Synchrotron X-ray Diffraction

Metals ◽  
2020 ◽  
Vol 10 (12) ◽  
pp. 1635
Author(s):  
Baoru Sun ◽  
Tongde Shen
Keyword(s):  
Plastic Deformation ◽  
Grain Growth ◽  
Structural Parameters ◽  
Stacking Faults ◽  
Constant Strain Rate ◽  
Deformation Mechanisms ◽  
Square Root ◽  
X Ray Diffraction ◽  
X Ray ◽  
Density Of Dislocations

The mechanisms responsible for the deformation of nanocrystalline materials are not well understood although many mechanisms have been proposed. This article studies the room-temperature stress-strain relations of bulk nanocrystalline silver deformed in a tension mode at a constant strain rate. Synchrotron X-ray diffraction patterns were gathered from the deformed specimen and used to deduce such structural parameters as the grain size and the density of dislocations, twins, and stacking faults. Our quantitative results indicate that grain growth and twinning occur in the stage of elastic deformation. Detwinning and accumulation of stacking faults occur in the early stage of plastic deformation, where the strength of nanocrystalline silver correlates well with the square root of stacking faults probability. Grain shrinking and generation of statistically stored dislocations occur in the final stage of plastic deformation, where the strength of nanocrystalline silver correlates well with the square root of the density of dislocations (statistically stored and geometrically necessary). Our results suggest that multiple deformation mechanisms such as grain growth, grain shrinking, twinning, detwinning, stacking faults, and dislocations, rather than a single deformation mechanism, occur in the elastic and plastic deformation stages of nanocrystalline silver.

Tem Structure Investigations of Low-Temperature MBE Grown Inalas Layers on INP Substrate

1992 ◽  
Vol 263 ◽  
Author(s):  
P. Werner ◽  
Z. Liliental-Weber ◽  
K.M. Yu ◽  
E.R. Weber ◽  
Z. Rek ◽  
...  
Keyword(s):  
Electrical Resistance ◽  
Stacking Faults ◽  
X Ray Diffraction ◽  
Real Crystal ◽  
X Ray ◽  
Group Iii ◽  
Temperature Range ◽  
Density Of Dislocations ◽  
Transmission Electron ◽  
Structure Investigations

ABSTRACTThe real crystal structure of In0.52A10.48As layers grown on InP<001> substrate as a function of the growth temperature (between 150°C and 450°C) was investigated. The following structural / electrical analyses were applied to the samples: transmission electron microscopy (TEM), x-ray diffraction and particle induced x-ray emission (PIXE). In the temperature range between 200°C and 450°C good epitaxial growth of InAlAs layers can be achieved with a low density of dislocations and stacking faults. Ordering of group-III elements on {111} planes was observed for these layers. Structure models of such ordered domains are discussed. At growth temperatures below 300 °C additional As (≈2%) is incorporated in the lattice. Growth at temperatures below 200°C leads to the formation of pyramidal defects with As grains in their cores. As-grown as well as annealed InAlAs layers show a nearly constant, high electrical resistance (106-107Ωcm) in the whole temperature range.

Microstructural Changes during Precision Machining of Thin Substrates

2010 ◽  
Vol 447-448 ◽  
pp. 76-80
Author(s):  
K. Saptaji ◽  
Subbiah Sathyan
Keyword(s):  
Plastic Deformation ◽  
Severe Plastic Deformation ◽  
Crystallographic Orientation ◽  
High Ratio ◽  
Machining Process ◽  
Deformation Mechanisms ◽  
Precision Machining ◽  
Depth Of Cut ◽  
X Ray Diffraction ◽  
X Ray

This paper reports investigations in machining of thin substrates with thickness less than 100m. The machining process induces severe plastic deformation through the thickness of the machined thin workpiece due to the high ratio of the depth of cut to workpiece thickness. The diamond face turning is used to machine thin workpieces down to a thickness less than 100m. The microstructure of the machined sample is studied and x-ray diffraction used to observe the crystallographic orientation / texture. The microstructures of the thin machined workpieces are seen to become more random, denser, and finer with the shape of the grains less elongated as compare to the bulk and thick machined sample. The x-ray diffraction analyses indicate that machining of thin substrates changes the texture or orientation. Different deformation mechanisms may occur when machining thin workpiece especially at thicknesses below 100m.

Structure of Feroxyhite as Determined by Simulation of X-Ray Diffraction Curves

Clay Minerals ◽  
1993 ◽  
Vol 28 (2) ◽  
pp. 209-222 ◽  
Author(s):  
V. A. Drits ◽  
B. A. Sakharov ◽  
A. Manceau
Keyword(s):  
Structural Parameters ◽  
Stacking Faults ◽  
Site Occupancy ◽  
Volume Ratio ◽  
Coherent Scattering ◽  
Close Packing ◽  
X Ray Diffraction ◽  
X Ray ◽  
Octahedral Sites ◽  
Atomic Coordinates

AbstractPowder X-ray diffraction (XRD) curves were calculated for the different structural models so far proposed for feroxyhite (δFeOOH). The influence on XRD features of different structural parameters, including site occupancy of Fe atoms, atomic coordinates, content and distribution of stacking faults, and dimension of coherent scattering domains, were considered. On the basis of agreement between experimental and simulated curves it is shown that δFeOOH is a mixture of feroxyhite proper and ultradispersed hematite in the 9 : 1 volume ratio. Feroxyhite proper consists of hexagonal close packing of anions containing 5% stacking faults. Iron atoms occupy only octahedral sites and are distributed in such a way that face-sharing filled octahedral pairs regularly alternate with vacant octahedral pairs along the c axis. This distribution of Fe atoms is quite similar to that established by Patrat et al. (1983), but in each pair, Fe atoms are displaced by the same value of 0.3 Å in opposite directions away from the centre of their octahedron. Nearest Fe-Fe distances calculated for the model proposed (2.88, 3.01, 3-39 and 3-73 Å) practically coincide with those found by EXAFS spectroscopy for the same sample (2-91, 3.04, 3.41 and 3.7-3.8 Å).

Defect structures of Nb1+αS2 sulfidation scales

1992 ◽  
Vol 50 (1) ◽  
pp. 38-39
Author(s):  
Chuxin Zhou ◽  
L. W. Hobbs
Keyword(s):  
Stacking Faults ◽  
Rhombohedral Structure ◽  
Stacking Sequence ◽  
Defect Structures ◽  
X Ray Diffraction ◽  
X Ray ◽  
Plane Normal ◽  
Lower Case ◽  
Sulfur Layer ◽  
Two Phases

One of the major purposes in the present work is to study the high temperature sulfidation properties of Nb in severe sulfidizing environments. Kinetically, the sulfidation rate of Nb is satisfactorily slow, but the microstructures and non-stoichiometry of Nb1+αS2 challenge conventional oxidation/sulfidation theory and defect models of non-stoichiometric compounds. This challenge reflects our limited knowledge of the dependence of kinetics and atomic migration processes in solid state materials on their defect structures.Figure 1 shows a high resolution image of a platelet from the middle portion of the Nb1+αS2 scale. A thin lamellar heterogeneity (about 5nm) is observed. From X-ray diffraction results, we have shown that Nb1+αS2 scale is principally rhombohedral structure, but 2H-NbS2 can result locally due to stacking faults, because the only difference between these 2H and 3R phases is variation in the stacking sequence along the c axis. Following an ABC notation, we use capital letters A, B and C to represent the sulfur layer, and lower case letters a, b and c to refer to Nb layers. For example, the stacking sequence of 2H phase is AbACbCA, which is a ∼12Å period along the c axis; the stacking sequence of 3R phase is AbABcBCaCA to form an ∼18Å period along the c axis. Intergrowth of these two phases can take place at stacking faults or by a shear in the basal plane normal to the c axis.

Investigation of Residual Strains of the Second Kind in Plastically Deformed Metallic Materials

1994 ◽  
Vol 376 ◽  
Author(s):  
M. Vrána ◽  
P. Klimanek ◽  
T. Kschidock ◽  
P. Lukáš ◽  
P. Mikula
Keyword(s):  
High Resolution ◽  
Neutron Diffraction ◽  
Stacking Faults ◽  
Metallic Materials ◽  
Line Broadening ◽  
X Ray Diffraction ◽  
X Ray ◽  
Neutron Diffractometer ◽  
Residual Strains ◽  
Good Agreement

ABSTRACTInvestigation of strongly distorted crystal structures caused by dislocations, stacking-faults etc. in both plastically deformed f.c.c. and b.c.c. metallic materials was performed by the analysis of the neutron diffraction line broadening. Measurements were realized by means of the high resolution triple-axis neutron diffractometer equipped by bent Si perfect crystals as monochromator and analyzer at the NPI Řež. The substructure parameters obtained in this manner are in good agreement with the results of X-ray diffraction analysis.

Influence of Severe Plastic Deformation on Physicomechanical Properties of Ti-40 mas % Nb Alloy

2016 ◽  
Vol 685 ◽  
pp. 525-529
Author(s):  
Zhanna G. Kovalevskaya ◽  
Margarita A. Khimich ◽  
Andrey V. Belyakov ◽  
Ivan A. Shulepov
Keyword(s):  
Plastic Deformation ◽  
Severe Plastic Deformation ◽  
Cold Working ◽  
Young Modulus ◽  
Physicomechanical Properties ◽  
X Ray Diffraction ◽  
Refined Grains ◽  
X Ray ◽  
Initial Alloy ◽  
Composition Structure

The changes of the phase composition, structure and physicomechanical properties of Ti‑40 mas % Nb after severe plastic deformation are investigated in this paper. By the methods of microstructural, X-ray diffraction analysis and scanning electron microscopy it is determined that phase and structural transformations occur simultaneously in the alloy after severe plastic deformation. The martensitic structure formed after tempering disappears. The inverse α'' → β transformation occurs. The structure consisting of oriented refined grains is formed. The alloy is hardened due to the cold working. The Young modulus is equal to 79 GPa and it is less than that of initial alloy and close to the value obtained after tempering. It is possible that Young modulus is reduced by additional annealing.

Preparation and Characterisation of TiO2 Thick Films Fabricated by Electrophoretic Deposition

2007 ◽  
Vol 561-565 ◽  
pp. 2163-2166 ◽  
Author(s):  
H.Z. Abdullah ◽  
Charles C. Sorrell
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Grain Growth ◽  
Electrophoretic Deposition ◽  
Defect Formation ◽  
Titanium Foil ◽  
X Ray Diffraction ◽  
Voltage Range ◽  
X Ray ◽  
Scanning Electron

Rutile nano-powders were suspended in a solution of acetylacetone and iodine. The suspensions were electrophoretically deposited on titanium foil at a voltage range of 5-30 V over times of 5-120 s. The dried tapes then were sintered at 800°C for 2 h in flowing argon. Both the green and fired tapes were examined by field emission scanning electron microscopy, optical microscopy, X-ray diffraction, and Raman microspectroscopy. The thickness of the films depended on the voltage and the time of deposition. The sintered microstructures depended significantly on the thickness of the film, which was a function the proximity to the Ti/TiO2 interface. The interface is critical to the microstructure because it acts as the source of defect formation, which enhances sintering, grain growth, and grain facetting.

Sign in / Sign up

Export Citation Format

Share Document