Tem Structure Investigations of Low-Temperature MBE Grown Inalas Layers on INP Substrate

1992 ◽  
Vol 263 ◽  
Author(s):  
P. Werner ◽  
Z. Liliental-Weber ◽  
K.M. Yu ◽  
E.R. Weber ◽  
Z. Rek ◽  
...  
Keyword(s):  
Electrical Resistance ◽  
Stacking Faults ◽  
X Ray Diffraction ◽  
Real Crystal ◽  
X Ray ◽  
Group Iii ◽  
Temperature Range ◽  
Density Of Dislocations ◽  
Transmission Electron ◽  
Structure Investigations

ABSTRACTThe real crystal structure of In0.52A10.48As layers grown on InP<001> substrate as a function of the growth temperature (between 150°C and 450°C) was investigated. The following structural / electrical analyses were applied to the samples: transmission electron microscopy (TEM), x-ray diffraction and particle induced x-ray emission (PIXE). In the temperature range between 200°C and 450°C good epitaxial growth of InAlAs layers can be achieved with a low density of dislocations and stacking faults. Ordering of group-III elements on {111} planes was observed for these layers. Structure models of such ordered domains are discussed. At growth temperatures below 300 °C additional As (≈2%) is incorporated in the lattice. Growth at temperatures below 200°C leads to the formation of pyramidal defects with As grains in their cores. As-grown as well as annealed InAlAs layers show a nearly constant, high electrical resistance (106-107Ωcm) in the whole temperature range.

scholarly journals Chemical Stability of Ti3C2 MXene with Al in the Temperature Range 500–700 °C

Materials ◽  
2018 ◽  
Vol 11 (10) ◽  
pp. 1979 ◽  
Author(s):  
Jing Zhang ◽  
Shibo Li ◽  
Shujun Hu ◽  
Yang Zhou
Keyword(s):  
Electron Microscopy ◽  
Chemical Stability ◽  
Metal Matrix ◽  
Matrix Composites ◽  
X Ray Diffraction ◽  
X Ray ◽  
Temperature Range ◽  
Transmission Electron ◽  
Work First ◽  
Scanning Electron

Ti3C2Tx MXene, a new 2D nanosheet material, is expected to be an attractive reinforcement of metal matrix composites because its surfaces are terminated with Ti and/or functional groups of –OH, –O, and –F which improve its wettability with metals. Thus, new Ti3C2Tx/Al composites with strong interfaces and novel properties are desired. To prepare such composites, the chemical stability of Ti3C2Tx with Al at high temperatures should be investigated. This work first reports on the chemical stability of Ti3C2Tx MXene with Al in the temperature range 500–700 °C. Ti3C2Tx is thermally stable with Al at temperatures below 700 °C, but it reacts with Al to form Al3Ti and TiC at temperatures above 700 °C. The chemical stability and microstructure of the Ti3C2Tx/Al samples were investigated by differential scanning calorimeter, X-ray diffraction analysis, scanning electron microscopy, and transmission electron microscopy.

Stacking Faults in SiC Nanowires

2008 ◽  
Vol 8 (7) ◽  
pp. 3504-3510 ◽  
Author(s):  
K. L. Wallis ◽  
M. Wieligor ◽  
T. W. Zerda ◽  
S. Stelmakh ◽  
S. Gierlotka ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Stacking Faults ◽  
Multiwall Carbon Nanotubes ◽  
Structural Defects ◽  
X Ray Diffraction ◽  
Ir Spectrometry ◽  
X Ray ◽  
Sic Nanowires ◽  
Transmission Electron ◽  
Multiwall Carbon

SiC nanowires were obtained by a reaction between vapor silicon and multiwall carbon nanotubes, CNT, in vacuum at 1200 °C. Raman and IR spectrometry, X-ray diffraction and high resolution transmission electron microscopy, HRTEM, were used to characterize properties of SiC nanowires. Morphology and chemical composition of the nanowires was similar for all samples, but concentration of structural defects varied and depended on the origin of CNT. Stacking faults were characterized by HRTEM and Raman spectroscopy, and both techniques provided complementary results. Raman microscopy allowed studying structural defects inside individual nanowires. A thin layer of amorphous silicon carbide was detected on the surface of nanowires.

scholarly journals Characterization of individual stacking faults in a wurtzite GaAs nanowire by nanobeam X-ray diffraction

2017 ◽  
Vol 24 (5) ◽  
pp. 981-990 ◽  
Author(s):  
Arman Davtyan ◽  
Sebastian Lehmann ◽  
Dominik Kriegner ◽  
Reza R. Zamani ◽  
Kimberly A. Dick ◽  
...  
Keyword(s):  
Bragg Peak ◽  
Stacking Faults ◽  
Growth Direction ◽  
X Ray Diffraction ◽  
X Ray ◽  
Patterson Function ◽  
Transmission Electron ◽  
Gaas Nanowires ◽  
Gaas Nanowire

Coherent X-ray diffraction was used to measure the type, quantity and the relative distances between stacking faults along the growth direction of two individual wurtzite GaAs nanowires grown by metalorganic vapour epitaxy. The presented approach is based on the general property of the Patterson function, which is the autocorrelation of the electron density as well as the Fourier transformation of the diffracted intensity distribution of an object. Partial Patterson functions were extracted from the diffracted intensity measured along the [000\bar{1}] direction in the vicinity of the wurtzite 00\bar{1}\bar{5} Bragg peak. The maxima of the Patterson function encode both the distances between the fault planes and the type of the fault planes with the sensitivity of a single atomic bilayer. The positions of the fault planes are deduced from the positions and shapes of the maxima of the Patterson function and they are in excellent agreement with the positions found with transmission electron microscopy of the same nanowire.

High-density stacking faults in a supersaturated nitrided layer on austenitic stainless steel

2016 ◽  
Vol 49 (6) ◽  
pp. 1967-1971 ◽  
Author(s):  
Ke Tong ◽  
Fei Ye ◽  
Honglong Che ◽  
Ming Kai Lei ◽  
Shu Miao ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Stainless Steel ◽  
Austenitic Stainless Steel ◽  
Nitrided Layer ◽  
Stacking Faults ◽  
High Density ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron

The nitrogen-supersaturated phase produced by low-temperature plasma-assisted nitriding of austenitic stainless steel usually contains a high density of stacking faults. However, the stacking fault density observed in previous studies was considerably lower than that determined by fitting the X-ray diffraction pattern. In this work, it has been confirmed by high-resolution transmission electron microscopy that the strip-shaped regions of about 3–25 nm in width observed at relatively low magnification essentially consist of a series of stacking faults on every second {111} atomic plane. A microstructure model of the clustered stacking faults embedded in a face-centred cubic structure was built for these regions. The simulated X-ray diffraction and transmission electron microscopy results based on this model are consistent with the observations.

Microstructure of Carbon Encapsulated Superparamagnetic Co Nanoparticles

2001 ◽  
Vol 704 ◽  
Author(s):  
Xiang-Cheng Sun ◽  
J. Reyes-Gasga ◽  
X. L. Dong
Keyword(s):  
Electron Microscopy ◽  
Arc Discharge ◽  
Stacking Faults ◽  
Good Evidence ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Lattice Images ◽  
Co Nanoparticles ◽  
Discharge Method

AbstractCarbon encapsulated magnetic Co nanoparticles have been synthesized by modified arc-discharge method. Both high-resolution transmission electron microscopy (HREM) and powder x-ray diffraction (XRD) profiles reveal the presence of 8-15nm diameter crystallites coated with 1-3 carbon layers. Specially, HREM images indicate that the intimate and contiguous carbon fringe around those Co nanoparticles is good evidence for complete encapsulation by carbon shell layers. The encapsulated phases are identified as hcp (α)-Co, fcc (β)-Co and cobalt carbide (Co3C) nanocrystals by using x-ray diffraction, electron diffraction and energy dispersive x-ray analysis. However, some fcc (β)-Co particles with a significant fraction of stacking faults are observed by HREM and confirmed by means of numerical Fourier transform (FFT) of HREM lattice images. In particular, the carbon encapsulation formation and growth mechanism are also reviewed.

scholarly journals Microstructure and Mechanical Properties of Pressure-Quenched SS304 Stainless Steel

Materials ◽  
2019 ◽  
Vol 12 (2) ◽  
pp. 290 ◽  
Author(s):  
Peng Wang ◽  
Yang Zhang ◽  
Dongli Yu
Keyword(s):  
High Pressure ◽  
Metallographic Analysis ◽  
Polycrystalline Materials ◽  
Test Results ◽  
X Ray Diffraction ◽  
X Ray ◽  
Self Heating ◽  
Density Of Dislocations ◽  
Transmission Electron ◽  
Quenching Method

Bulk SS304 polycrystalline materials with ultrafine microstructures were prepared via a high-pressure self-heating melting and quenching method. Analyses of phase composition, grain size and microstructure were performed using metallographic analysis, X-ray diffraction, Rietveld refinement and transmission electron microscope (TEM). The effects of pressure and cooling rate on the solidification of SS304 were analyzed. Mechanical property test results show that, compared with the as-received sample, the hardness and the yield strength of the pressure-quenched (PQ) samples were greatly increased, the ultimate tensile strength changed minimally, and the elongation rate became small, primarily due to the large density of dislocations in the sample. The high-pressure self-heating melting and quenching method is an exotic route to process a small piece of steel with moderate properties and ultrafine microstructure.

scholarly journals Probing the Deformation Mechanisms of Nanocrystalline Silver by In-Situ Tension and Synchrotron X-ray Diffraction

Metals ◽  
2020 ◽  
Vol 10 (12) ◽  
pp. 1635
Author(s):  
Baoru Sun ◽  
Tongde Shen
Keyword(s):  
Plastic Deformation ◽  
Grain Growth ◽  
Structural Parameters ◽  
Stacking Faults ◽  
Constant Strain Rate ◽  
Deformation Mechanisms ◽  
Square Root ◽  
X Ray Diffraction ◽  
X Ray ◽  
Density Of Dislocations

The mechanisms responsible for the deformation of nanocrystalline materials are not well understood although many mechanisms have been proposed. This article studies the room-temperature stress-strain relations of bulk nanocrystalline silver deformed in a tension mode at a constant strain rate. Synchrotron X-ray diffraction patterns were gathered from the deformed specimen and used to deduce such structural parameters as the grain size and the density of dislocations, twins, and stacking faults. Our quantitative results indicate that grain growth and twinning occur in the stage of elastic deformation. Detwinning and accumulation of stacking faults occur in the early stage of plastic deformation, where the strength of nanocrystalline silver correlates well with the square root of stacking faults probability. Grain shrinking and generation of statistically stored dislocations occur in the final stage of plastic deformation, where the strength of nanocrystalline silver correlates well with the square root of the density of dislocations (statistically stored and geometrically necessary). Our results suggest that multiple deformation mechanisms such as grain growth, grain shrinking, twinning, detwinning, stacking faults, and dislocations, rather than a single deformation mechanism, occur in the elastic and plastic deformation stages of nanocrystalline silver.

scholarly journals Strengthening Al-Zn-Mg Alloys via Ultra-Fine Lamella Structures Containing a High Density of Dislocations and Clusters

Metals ◽  
2019 ◽  
Vol 9 (2) ◽  
pp. 140 ◽  
Author(s):  
Yonggui Qin ◽  
Sicong Lin ◽  
Shenbao Jin ◽  
Jizi Liu
Keyword(s):  
Electron Microscope ◽  
Yield Strength ◽  
High Density ◽  
Mechanical Processing ◽  
X Ray Diffraction ◽  
X Ray ◽  
Density Of Dislocations ◽  
Transmission Electron ◽  
Peak Aged ◽  
Fractographic Features

A new method of thermo-mechanical processing has been designed by introducing pre-aging before general cold rolling for an Al-Zn-Mg alloy. This process results in an increase of 200 MPa in yield strength compared to that of the peak-aged samples. The microstructures were examined by transmission electron microscope and X-ray diffraction. It has been found that the enhanced strength is mainly contributed to by ultra-fine lamella structures containing a high density of dislocations pinned by nanoprecipitates. Extra strength is provided by the “interlocking” of precipitates and dislocations. Fractographic features analysis shows that crack propagation along the interface of the lamella structures is the direct reason for resulting in fracture, due to intra-granular strength exceeding grain boundary cohesion.

scholarly journals Crystallization of Fe-Based Bulk Amorphous Alloys

2015 ◽  
Vol 60 (1) ◽  
pp. 7-10 ◽  
Author(s):  
K. Błoch ◽  
M. Nabiałek ◽  
M. Dośpiał ◽  
S. Garus
Keyword(s):  
Amorphous Alloys ◽  
Rapid Quenching ◽  
X Ray Diffraction ◽  
Scanning Calorimetry ◽  
X Ray ◽  
Transmission Electron ◽  
Two Stages ◽  
Two Peaks ◽  
Structure Investigations ◽  
Dsc Curves

Abstract The aim of this paper is to present the results of crystallization studies for the bulk amorphous (Fe0.61Co0.10Zr0.025Hf0.025 Ti0.02W0.02B0.20)98Y2, Fe61Co10TixY6B20, Fe61Co10Ti2Y7B20 alloys. The crystallization of the alloys was studied by differential scanning calorimetry (DSC). The amorphicity of the investigated alloys in the as-quenched state was testified using Mossbauer spectroscopy, X-ray diffractometry and transmission electron microscopy. Moreover, X-ray diffractometry was applied to structure investigations of partially crystallized samples. The crystallization process in the investigated alloys occurs in one or two stages. Two peaks in the DSC curves can be overlapped or well separated indicating the complex crystallization processes. From X-ray diffraction we have stated that in both types of devitrification the crystalline phase can be ascribed to the α-FeCo. In the first stage the crystalline grains seem to grow from the nuclei frozen in the samples during the rapid quenching, whereas in the second one both the growth of the existed grains and creation of new ones during annealing may occur.

Microstructures of diamond formed by plasma-assisted chemical vapor deposition

1990 ◽  
Vol 5 (7) ◽  
pp. 1480-1489 ◽  
Author(s):  
J. L. Kaae ◽  
P. K. Gantzel ◽  
J. Chin ◽  
W. P. West
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Stacking Faults ◽  
Chemical Vapor ◽  
General Characteristic ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Surface Morphologies ◽  
Deposition Conditions

The microstructures of five different diamond films formed by plasma-assisted chemical vapor deposition have been studied by transmission electron microscopy. The films were selected for study based on differences in their surface morphologies. The preferred orientations inferred from the symmetries of the crystals observed on the surfaces of these films were consistent with those measured by x-ray diffraction. A general characteristic of all of the diamond film microstructures was stacking faults and microtwins on {111} planes, but the densities and the distributions of the defects varied widely among the films. The observations of microstructure indicate that when a crystal grows so that {100} facets are formed, stacking faults and microtwins are confined to regions near its boundaries, and when a crystal grows so that {111} facets are formed, stacking faults and microtwins are distributed throughout its volume. Under some deposition conditions the defects are confined to bands in the crystal, and coincidence of these defect bands with small steps on the crystal facets suggests that the steps may be caused by the intersection of the bands with the surface.

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