scholarly journals Enhanced Photon Emission Efficiency Using Surface Plasmon Effect of Pt Nanoparticles in Ultra-Violet Emitter

Micromachines ◽  
2019 ◽  
Vol 10 (8) ◽  
pp. 528 ◽  
Author(s):  
Choi ◽  
Kim ◽  
Chu ◽  
Noh ◽  
Lee ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Surface Plasmon ◽  
Photon Emission ◽  
Pt Nanoparticles ◽  
Ultra Violet ◽  
Multiple Quantum ◽  
Algan Layer ◽  
Resonance Coupling ◽  
Electroluminescence Intensity ◽  
20 Nm

We demonstrate the surface plasmon (SP)-enhanced ultraviolet (UV) emitter using Pt nanoparticles (NPs). The UV emitter is hole-patterned on the p-AlGaN layer to consider the penetration depth of Pt NPs. The Pt NPs with sizes under 50 nm are required to realize the plasmonic absorption in UV wavelength. In this study, we confirm the average Pt NP sizes of 10 nm, 20 nm, and 25 nm, respectively, at an annealing temperature of 600 °C. The absorption of annealed Pt NPs is covered with the 365-nm wavelength. The electroluminescence intensity of SP-UV is 70% higher than that of reference UV emitter without hole-patterns and Pt NPs. This improvement can be attributed to the increase of spontaneous emission rate through resonance coupling between the excitons in multiple quantum wells and Pt NPs deposited on the p-AlGaN layer.

scholarly journals Nanoscale Characterization of Surface Plasmon-Coupled Photoluminescence Enhancement in Pseudo Micro Blue LEDs Using Near-Field Scanning Optical Microscopy

Nanomaterials ◽  
2020 ◽  
Vol 10 (4) ◽  
pp. 751
Author(s):  
Yufeng Li ◽  
Aixing Li ◽  
Ye Zhang ◽  
Peng Hu ◽  
Wei Du ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Optical Microscopy ◽  
Surface Plasmon ◽  
Plasmon Resonance ◽  
Near Field ◽  
Excitation Power ◽  
Localized Surface Plasmon ◽  
Excitation Density ◽  
Multiple Quantum ◽  
Excitation Power Density

The microcave array with extreme large aspect ratio was fabricated on the p-GaN capping layer followed by Ag nanoparticles preparation. The coupling distance between the dual-wavelength InGaN/GaN multiple quantum wells and the localized surface plasmon resonance was carefully characterized in nanometer scale by scanning near-field optical microscopy. The effects of coupling distance and excitation power on the enhancement of photoluminescence were investigated. The penetration depth was measured in the range of 39–55 nm depending on the excitation density. At low excitation power density, the maximum enhancement of 103 was achieved at the optimum coupling distance of 25 nm. Time-resolved photoluminescence shows that the recombination life time was shortened from 5.86 to 1.47 ns by the introduction of Ag nanoparticle plasmon resonance.

Nanoscale Features Grown by MBE on Nonplanar Patterned Si Substrates

1995 ◽  
Vol 380 ◽  
Author(s):  
Karl D. Hobart ◽  
Fritz J. Kub ◽  
Henry F. Gray ◽  
Mark E. Twigg ◽  
Doewon Park ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Growth Parameters ◽  
Multiple Quantum ◽  
Electron Microscopies ◽  
Si Substrates ◽  
Transmission Electron ◽  
Low Dimensional ◽  
20 Nm ◽  
Nanoscale Features ◽  
Qualitative Changes

ABSTRACTSi growth by molecular beam epitaxy on nonplanar patterned Si substrates is studied as a function of growth parameters. The substrates consist of a truncated pyramid template with {111} sides and (100) tops formed by anisotropic etching of Si(100). For growth temperatures ≤ 550°C no qualitative changes in the morphology of the template are observed. At growth temperatures between 650–700°C {113} facets begin to form on the (100) surface and reduce the lateral dimensions of the (100) facet to < 20 nm. At high temperatures (∼800°C) {113} facets remain stable and {111} facets no longer exist. The small (100) mesa formed at medium temperatures by facet reduction is exploited through the growth of Si/Si 1-xGex multiple quantum wells leading to low-dimensional structures. Observations are quantified by scanning electron and transmission electron microscopies.

Electrical-Pumped Active Plasmonic with InP-Based Quantum Wells

2011 ◽  
Vol 415-417 ◽  
pp. 537-540
Author(s):  
Te Li ◽  
Er Juan Hao
Keyword(s):  
Quantum Wells ◽  
Surface Plasmon ◽  
Surface Plasmon Polaritons ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Forward Voltage ◽  
Loss Compensation ◽  
Plasmon Polaritons

The InP-based wafers with InGaAsP multiple Quantum Wells (QWs) were designed for the loss compensation of surface plasmon polaritons (SPPs). Electrical-pumped device was fabricated by conventional III-V processes and e-Beam lithography (EBL) technology. When forward voltage is added on the device, it is observed that the gain of the quantum wells at 1.55μm assist the propagation of SPPs.

Surface Plasmon Enhanced Hot Exciton Emission in Deep UV-Emitting AlGaN Multiple Quantum Wells

2014 ◽  
Vol 2 (5) ◽  
pp. 451-458 ◽  
Author(s):  
Jun Yin ◽  
Yang Li ◽  
Shengchang Chen ◽  
Jing Li ◽  
Junyong Kang ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Surface Plasmon ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Exciton Emission ◽  
Deep Uv

Effect of Interface Roughness and Dislocation Density on Electroluminescence Intensity of InGaN Multiple Quantum Wells

2008 ◽  
Vol 25 (11) ◽  
pp. 4143-4146 ◽  
Author(s):  
Zhao De-Gang ◽  
Jiang De-Sheng ◽  
Zhu Jian-Jun ◽  
Liu Zong-Shun ◽  
Zhang Shu-Ming ◽  
...  
Keyword(s):  
Dislocation Density ◽  
Quantum Wells ◽  
Interface Roughness ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Electroluminescence Intensity

Quaternary AlInGaN MQWs for Ultraviolet LEDs

2001 ◽  
Vol 693 ◽  
Author(s):  
J. P. Zhang ◽  
J. W. Yang ◽  
V. Adivarahan ◽  
H. M. Wang ◽  
Q. Fareed ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Light Emitting Diode ◽  
Atomic Layer ◽  
Optical Quality ◽  
Multiple Quantum ◽  
Light Emitting ◽  
Force Microscopy ◽  
Peak Emission Wavelength ◽  
Pulsed Atomic Layer Epitaxy ◽  
20 Nm

AbstractWe report a pulsed atomic layer epitaxy (PALE) growth technique for quaternary AlInGaN films for ultraviolet optoelectronic applications. Using the PALE approach high quality quaternary AlInGaN/AlInGaN multiple quantum wells (MQWs) were successfully grown over sapphire substrates. From X-ray diffraction, atomic force microscopy, and photoluminescence study, a high structural and optical quality was established for the AlInGaN MQWs. Incorporating the PALE grown quaternary MQWs as the active layer of light emitting diode (LED) on sapphire or SiC substrates we also demonstrated room temperature deep ultraviolet electroluminescence under dc and pulsed electrical pumping. The peak emission wavelength can be tuned from 305 nm to 340 nm with spectrum FWHM of about 20 nm by varying the alloy compositions of the quaternary AlInGaN active layers using PALE. Comparative study of LEDs over sapphire and SiC substrates was also done in order to determine the influence of epilayer design on the performance parameters and the role of the substrate absorption.

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