scholarly journals A Novel Step–Doped Channel AlGaN/GaN HEMTs with Improved Breakdown Performance

Micromachines ◽  
2021 ◽  
Vol 12 (10) ◽  
pp. 1244
Author(s):  
Jianhua Liu ◽  
Yufeng Guo ◽  
Jun Zhang ◽  
Jiafei Yao ◽  
Man Li ◽  
...  
Keyword(s):  
Field Distribution ◽  
Potential Distribution ◽  
High Electron Mobility Transistor ◽  
Numerical Approach ◽  
Potential Method ◽  
High Electron ◽  
Gan Hemt ◽  
Channel Layer ◽  
Equivalent Potential ◽  
Good Agreement

The AlGaN/GaN high electron mobility transistor with a step–doped channel (SDC–HEMT) is first proposed in this paper. The potential distribution and the electric field (E–field) distribution of the device are explored by the numerical approach and analytical approach simultaneously. By introducing extra dopants to the channel layer, the E–field distribution along the AlGaN/GaN heterojunction interface is reshaped, resulting in an improved breakdown characteristic. An optimized doping concentration gradient of channel layer of 2 × 1016 cm−3/step is proposed and verified by simulations. The breakdown voltage (BV) of the optimized SDC–HEMT reaches 1486 V with a 59.8% improvement compared with conventional AlGaN/GaN HEMT. In addition, the average E–field in the region between gate and drain improves from 1.5 to 2.5 MV/cm. Based on the equivalent potential method (EPM), an analytical model of the E–field and potential distribution is presented. The veracity and effectiveness of the proposed methodology is verified by the good agreement between the simulated and modeled results.

An Analytical Model for Field-Plate Optimization in High Electron Mobility Transistor

2012 ◽  
Vol 529 ◽  
pp. 33-36
Author(s):  
Qian Luo ◽  
Jiang Feng Du ◽  
Xiang Wang ◽  
Ning Ning ◽  
Yang Liu ◽  
...  
Keyword(s):  
Analytical Model ◽  
Electron Mobility ◽  
Potential Distribution ◽  
High Electron Mobility Transistor ◽  
Critical Parameters ◽  
Physical Parameters ◽  
High Electron ◽  
High Electron Mobility ◽  
Field Plate ◽  
Gan Hemt

An analytical model for field-plate (FP) optimization in high electron mobility transistor (HEMT) is reported. With the potential distribution in device’s channel being modeled in terms of physical parameters, the two critical parameters of FP, i.e., the insulator thickness and the FP length, are optimized respectively. Using the model, the optimization of the FP structure in a typical undoped AlGaN/GaN HEMT is described in detail.

scholarly journals Physics-Based TCAD Simulation and Calibration of 600 V GaN/AlGaN/GaN Device Characteristics and Analysis of Interface Traps

Micromachines ◽  
2021 ◽  
Vol 12 (7) ◽  
pp. 751
Author(s):  
Yu-Lin Song ◽  
Manoj Kumar Reddy ◽  
Luh-Maan Chang ◽  
Gene Sheu
Keyword(s):  
Conduction Band ◽  
Computer Aided Design ◽  
Measurement Data ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
Device Structure ◽  
Gan Hemt ◽  
Fixed Charges ◽  
Vertical Electric Field ◽  
Aided Design

This study proposes an analysis of the physics-based TCAD (Technology Computer-Aided Design) simulation procedure for GaN/AlGaN/GaN HEMT (High Electron Mobility Transistor) device structures grown on Si (111) substrate which is calibrated against measurement data. The presence of traps and activation energies in the device structure will impact the performance of a device, the source of traps and position of traps in the device remains as a complex exercise until today. The key parameters for the precise tuning of threshold voltage (Vth) in GaN transistors are the control of the positive fixed charges −5 × 1012 cm−2, donor-like traps −3 × 1013 cm−2 at the nitride/GaN interfaces, the energy of the donor-like traps 1.42 eV below the conduction band and the acceptor traps activation energy in the AlGaN layer and buffer regions with 0.59 eV below the conduction band. Hence in this paper, the sensitivity of the trap mechanisms in GaN/AlGaN/GaN HEMT transistors, understanding the absolute vertical electric field distribution, electron density and the physical characteristics of the device has been investigated and the results are in good agreement with GaN experimental data.

scholarly journals A New Study on the Temperature and Bias Dependence of the Kink Effects in S22 and h21 for the GaN HEMT Technology

Electronics ◽  
2018 ◽  
Vol 7 (12) ◽  
pp. 353 ◽  
Author(s):  
Giovanni Crupi ◽  
Antonio Raffo ◽  
Valeria Vadalà ◽  
Giorgio Vannini ◽  
Alina Caddemi
Keyword(s):  
Short Circuit ◽  
Equivalent Circuit Model ◽  
Short Circuit Current ◽  
High Electron Mobility Transistor ◽  
Current Gain ◽  
Device Performance ◽  
High Electron ◽  
Gan Hemt ◽  
Temperature Conditions ◽  
Conventional Instrumentation

The aim of this feature article is to provide a deep insight into the origin of the kink effects affecting the output reflection coefficient (S22) and the short-circuit current-gain (h21) of solid-state electronic devices. To gain a clear and comprehensive understanding of how these anomalous phenomena impact device performance, the kink effects in S22 and h21 are thoroughly analyzed over a broad range of bias and temperature conditions. The analysis is accomplished using high-frequency scattering (S-) parameters measured on a gallium-nitride (GaN) high electron-mobility transistor (HEMT). The experiments show that the kink effects might become more or less severe depending on the bias and temperature conditions. By using a GaN HEMT equivalent-circuit model, the experimental results are analyzed and interpreted in terms of the circuit elements to investigate the origin of the kink effects and their dependence on the operating condition. This empirical analysis provides valuable information, simply achievable by conventional instrumentation, that can be used not only by GaN foundries to optimize the technology processes and, as a consequence, device performance, but also by designers that need to face out with the pronounced kink effects of this amazing technology.

Performance Enhancement of AlGaN/GaN HEMT by Optimization of Device Parameters Considering Nanometer Barrier Layer Thickness

2020 ◽  
Vol 19 (06) ◽  
pp. 2050011
Author(s):  
Yogesh Kumar Verma ◽  
Varun Mishra ◽  
Santosh Kumar Gupta
Keyword(s):  
Performance Enhancement ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
Barrier Layer Thickness ◽  
Gan Hemt ◽  
Transfer Characteristics ◽  
Strong Inversion ◽  
Present Design ◽  
Device Geometry ◽  
Dimensional Electron Gas

The two-dimensional electron gas (2DEG) at the heterointerface of AlGaN and GaN is a complicated transcendental function of gate voltage, so an analytical charge control model for AlGaN/GaN high electron mobility transistor (HEMT) is presented accounting for all the three regions of operation (i.e., sub-threshold, moderate, and strong-inversion region). In addition to it, the performance of AlGaN/GaN HEMT is highly dependent on the device geometry. Therefore, to get the optimum performance of the device it is advisable to optimize the parameters governing the device geometry. Accordingly, the output and transfer characteristics, threshold voltage, ON current, OFF current, and transconductance are calculated using numerical computations. The present design is tested to calculate the voltage transfer characteristics (VTC) and transient characteristics of the invertor circuit, after the optimization of the device parameters.

A differential extended gate-AlGaN/GaN HEMT sensor for real-time detection of ionic pollutants

2019 ◽  
Vol 11 (31) ◽  
pp. 3981-3986 ◽  
Author(s):  
Lei Zhao ◽  
Xinsheng Liu ◽  
Bin Miao ◽  
Zhiqi Gu ◽  
Jin Wang ◽  
...  
Keyword(s):  
Real Time ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Gan Hemt ◽  
Real Time Detection

In this study, we propose a differential extended gate (DEG)-AlGaN/GaN high electron mobility transistor (HEMT) sensor to detect ionic pollutants in solution.

Effect of GaN Cap Layer on the Electrical Properties of AlGaN/GaN HEMT

2012 ◽  
Vol 217-219 ◽  
pp. 2393-2396 ◽  
Author(s):  
Han Guo ◽  
Wu Tang ◽  
Wei Zhou ◽  
Chi Ming Li
Keyword(s):  
Electrical Properties ◽  
Doping Concentration ◽  
Cutoff Frequency ◽  
High Electron Mobility Transistor ◽  
Current Gain ◽  
High Electron ◽  
Saturation Current ◽  
Gan Hemt ◽  
Cap Layer ◽  
Dimensional Electron Gas

The electrical properties of AlGaN/GaN heterojunction high electron mobility transistor (HEMT) are simulated by using sentaurus software. This paper compares two structures, the HEMT with GaN cap layer and the HEMT without GaN cap layer. The sentaurus software simulates the DC and AC characteristics of the two AlGaN/GaN HEMT structures. The HEMT with GaN cap layer can increase the maximum transconductance gm from 177ms/mm to 399ms/mm when the doping concentration of the cap layer is 3×1018cm-3 compared with the other structure under the same conditions. The simulation results indicate that the HEMT with cap layer can increase maximum transconductance gm, saturation current Ids, current-gain cutoff frequency fT, maximum oscillation frequency fmax and reduce the series resistance of the drain to source compared with the HEMT without GaN cap layer. The large Ids of the HEMT with cap layer is attributed to the increase of the concentration of two dimensional electron gas (2DEG). Moreover, the change of the doping concentration of the cap layer will affect the gm and Ids.

scholarly journals Highly sensitive extended gate-AlGaN/GaN high electron mobility transistor for bioassay applications

RSC Advances ◽  
2017 ◽  
Vol 7 (88) ◽  
pp. 55835-55838 ◽  
Author(s):  
Xiangzhen Ding ◽  
Bin Miao ◽  
Zhiqi Gu ◽  
Baojun Wu ◽  
Yimin Hu ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Sensitivity ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Gan Hemt ◽  
Highly Sensitive

An extended gate-AlGaN/GaN high electron mobility transistor (EG-AlGaN/GaN HEMT) with a high sensitivity for bioassay has been developed.

scholarly journals High Power Normally-OFF GaN/AlGaN HEMT with Regrown p Type GaN

Energies ◽  
2021 ◽  
Vol 14 (19) ◽  
pp. 6098
Author(s):  
Gwen Rolland ◽  
Christophe Rodriguez ◽  
Guillaume Gommé ◽  
Abderrahim Boucherif ◽  
Ahmed Chakroun ◽  
...  
Keyword(s):  
High Electron Mobility Transistor ◽  
Device Performance ◽  
High Electron ◽  
Chemical Beam Epitaxy ◽  
High Electron Mobility ◽  
Device Failure ◽  
Gan Hemt ◽  
Silvaco Atlas ◽  
P Type ◽  
The Impact

In this paper is presented a Normally-OFF GaN HEMT (High Electron Mobility Transistor) device using p-doped GaN barrier layer regrown by CBE (Chemical Beam Epitaxy). The impact of the p doping on the device performance is investigated using TCAD simulator (Silvaco/Atlas). With 4E17 cm−3 p doping, a Vth of 1.5 V is achieved. Four terminal breakdowns of the fabricated device are investigated, and the origin of the device failure is identified.

scholarly journals Highly sensitive AlGaN/GaN HEMT biosensors using an ethanolamine modification strategy for bioassay applications

RSC Advances ◽  
2019 ◽  
Vol 9 (27) ◽  
pp. 15341-15349 ◽  
Author(s):  
Zhiqi Gu ◽  
Jin Wang ◽  
Bin Miao ◽  
Lei Zhao ◽  
Xinsheng Liu ◽  
...  
Keyword(s):  
Surface Modification ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Gan Hemt ◽  
Highly Efficient ◽  
Highly Sensitive ◽  
Amine Groups

We propose a highly efficient surface modification strategy on an AlGaN/GaN high electron mobility transistor, where ethanolamine was utilized to functionalize the surface of GaN and provided amphoteric amine groups for bioassay application.

Full integrated process to manufacture RF-MEMS and MMICs on GaN/Si substrate

2010 ◽  
Vol 2 (3-4) ◽  
pp. 333-339 ◽  
Author(s):  
Flavia Crispoldi ◽  
Alessio Pantellini ◽  
Simone Lavanga ◽  
Antonio Nanni ◽  
Paolo Romanini ◽  
...  
Keyword(s):  
Insertion Loss ◽  
Rf Mems ◽  
Noise Figure ◽  
High Electron Mobility Transistor ◽  
Low Noise ◽  
High Electron ◽  
Mems Devices ◽  
Frequency Range ◽  
Gan Hemt ◽  
Better Than

Radio Frequency Micro-Electro-Mechanical System (RF-MEMS) represents a feasible solution to obtain very low power dissipation and insertion loss, very high isolation and linearity switch with respect to “solid state” technologies. In this paper, we demonstrate the full integration of RF-MEMS switches in the GaN-HEMT (Gallium Nitride/High Electron Mobility Transistor) fabrication line to develop RF-MEMS devices and LNA-MMIC (Low Noise Amplifier/Monolithic Microwave Integrated Circuit) prototype simultaneously in the same GaN wafer. In particular, two different coplanar wave (CPW) LNAs and a series of discrete RF-MEMS in ohmic-series and capacitive-shunt configuration have been fabricated. RF-MEMS performances reveal an insertion loss and isolation better than 1 and 15 dB, respectively, in the frequency range 20–50 GHz in the case of pure capacitive shunt switches and in the frequency range 5–35 GHz for the ohmic-series switches. Moreover, the GaN HEMT device shows an Fmax of about 38 GHz and a power density of 6.5 W/mm, while for the best LNA-MMIC we have obtained gain better than 12 dB at 6–10 GHz with a noise figure of circa 4 dB, demonstrating the integration achievability.

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