scholarly journals Optimization of the In Situ Biasing FIB Sample Preparation for Hafnia-Based Ferroelectric Capacitor

Micromachines ◽  
2021 ◽  
Vol 12 (12) ◽  
pp. 1436
Author(s):  
Qilan Zhong ◽  
Yiwei Wang ◽  
Yan Cheng ◽  
Zhaomeng Gao ◽  
Yunzhe Zheng ◽  
...  
Keyword(s):  
Sample Preparation ◽  
Success Rate ◽  
Performance Optimization ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Random Access ◽  
Protective Layer ◽  
Structure Characterization ◽  
Ferroelectric Capacitor

Hafnia-based ferroelectric (FE) thin films have received extensive attention in both academia and industry, benefitting from their outstanding scalability and excellent CMOS compatibility. Hafnia-based FE capacitors in particular have the potential to be used in dynamic random-access memory (DRAM) applications. Obtaining fine structure characterization at ultra-high spatial resolution is helpful for device performance optimization. Hence, sample preparation by the focused ion beam (FIB) system is an essential step, especially for in situ biasing experiments in a transmission electron microscope (TEM). In this work, we put forward three tips to improve the success rate of in situ biasing experiments: depositing a carbon protective layer to position the interface, welding the sample on the top of the Cu column of the TEM grid, and cutting the sample into a comb-like shape. By these means, in situ biasing of the FE capacitor was realized in TEM, and electric-field-induced tetragonal (t-) to monoclinic (m-) structure transitions in Hf0.5Zr0.5O2 FE film were observed. The improvement of FIB sample preparation technology can greatly enhance the quality of in situ biasing TEM samples, improve the success rate, and extend from capacitor sample preparation to other types.

To Eliminate Curtain Effect of FIB TEM Samples by a Combination of Sample Dicing and Backside Milling

2014 ◽  
Author(s):  
Jian-Shing Luo ◽  
Hsiu Ting Lee
Keyword(s):  
Sample Preparation ◽  
Focused Ion Beam ◽  
Preparation Method ◽  
Low Cost ◽  
Ion Beam ◽  
Sample Preparation Method ◽  
Site Specific ◽  
Dual Beam ◽  
Transmission Electron

Abstract Several methods are used to invert samples 180 deg in a dual beam focused ion beam (FIB) system for backside milling by a specific in-situ lift out system or stages. However, most of those methods occupied too much time on FIB systems or requires a specific in-situ lift out system. This paper provides a novel transmission electron microscopy (TEM) sample preparation method to eliminate the curtain effect completely by a combination of backside milling and sample dicing with low cost and less FIB time. The procedures of the TEM pre-thinned sample preparation method using a combination of sample dicing and backside milling are described step by step. From the analysis results, the method has applied successfully to eliminate the curtain effect of dual beam FIB TEM samples for both random and site specific addresses.

Fast Preparation of Ultrathin FIB Lamellas for MEMs-Based In Situ TEM Experiments

2016 ◽  
Vol 850 ◽  
pp. 722-727 ◽  
Author(s):  
Hui Wang ◽  
Shang Gang Xiao ◽  
Qiang Xu ◽  
Tao Zhang ◽  
Henny Zandbergen
Keyword(s):  
Sample Preparation ◽  
Focused Ion Beam ◽  
Preparation Method ◽  
Ion Beam ◽  
Metallic Alloy ◽  
In Situ Tem ◽  
Ion Milling ◽  
Electrochemical Polishing ◽  
Argon Ion

The preparation of thin lamellas by focused ion beam (FIB) for MEMS-based in situ TEM experiments is time consuming. Typically, the lamellas are of ~5μm*10μm and have a thickness less than 100nm. Here we demonstrate a fast lamellas’ preparation method using special fast cutting by FIB of samples prepared by conventional TEM sample preparation by argon ion milling or electrochemical polishing methods. This method has been applied successfully on various materials, such as ductile metallic alloy Ti68Ta27Al5, brittle ceramics K0.5Na0.5NbO3-6%LiNbO3 and semiconductor Si. The thickness of the lamellas depends on the original TEM sample.

Applications of In-situ Sample Preparation and Modeling of SEM-STEM Imaging

2008 ◽  
Author(s):  
R.J. Young ◽  
A. Buxbaum ◽  
B. Peterson ◽  
R. Schampers
Keyword(s):  
Sample Preparation ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Dual Beam ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Electron Microscopes ◽  
Scanning Electron Microscopes ◽  
Preparation Techniques

Abstract Scanning transmission electron microscopy with scanning electron microscopes (SEM-STEM) has become increasing used in both SEM and dual-beam focused ion beam (FIB)-SEM systems. This paper describes modeling undertaken to simulate the contrast seen in such images. Such modeling provides the ability to help understand and optimize imaging conditions and also support improved sample preparation techniques.

Multiple-Post In-Situ Lift-Out Grids Preparation Using a Dicing Saw

2011 ◽  
Author(s):  
Jian-Shing Luo ◽  
Hsiu-Ting Lee ◽  
San-Lin Liew ◽  
Ching-Shan Sung ◽  
Yi-Jing Wu
Keyword(s):  
Sample Preparation ◽  
Focused Ion Beam ◽  
Flat Surface ◽  
Ion Beam ◽  
Ex Situ ◽  
Real Case ◽  
Case Application ◽  
Bond Pads ◽  
Preparation Techniques

Abstract The use of in-situ lift-out combined with focused ion beam milling has become a favorable choice as it offers several indispensable advantages compared to the conventional mechanical and ex-situ lift-out sample preparation techniques. This paper discusses the procedures of the multiple-post in-situ lift-out grids preparation using a dicing saw. In addition, a real case is described to show that the multiple-post in-situ lift-out grids have been successfully applied to failure analysis. The multiple-post in-situ lift-out grids provide more positions and flatter surfaces for TEM sample mounting. The flat surface greatly increases the mounting efficiency and success rate. For the real case application, a thick Al fluoride oxide layer and Al corrosion were found above the Al bond pads, which had NOSP problem, and their neighbor area, respectively.

scholarly journals Optimized cryo-focused ion beam sample preparation aimed at in situ structural studies of membrane proteins

2017 ◽  
Vol 197 (2) ◽  
pp. 73-82 ◽  
Author(s):  
Miroslava Schaffer ◽  
Julia Mahamid ◽  
Benjamin D. Engel ◽  
Tim Laugks ◽  
Wolfgang Baumeister ◽  
...  
Keyword(s):  
Membrane Proteins ◽  
Sample Preparation ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Structural Studies ◽  
Beam Sample

In-Situ Sample Preparation and High-Resolution SEM-STEM Analysis

2004 ◽  
Author(s):  
Richard J. Young ◽  
Michael P. Bernas ◽  
Mary V. Moore ◽  
Young-Chung Wang ◽  
Jay P. Jordan ◽  
...  
Keyword(s):  
Electron Microscope ◽  
High Resolution ◽  
Sample Preparation ◽  
Scanning Transmission Electron Microscopy ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Dual Beam ◽  
Transmission Electron ◽  
Scanning Transmission

Abstract The dual-beam system, which combines a high-resolution scanning electron microscope (SEM) with a focused ion beam (FIB), allows sample preparation, imaging, and analysis to be accomplished in a single tool. This paper discusses how scanning transmission electron microscopy (STEM) with the electron beam enhances the analysis capabilities of the dualbeam. In particular, it shows how, using the combination of in-situ sample preparation and integrated SEM-STEM imaging, more failure analysis and characterization problems can be solved in the dual-beam without needing to use the Ångstrom-level capabilities of the transmission electron microscope (TEM).

In-Situ TEM Electrical Characterization of Void Formation and Growth Along Cu Interconnect Via: FIB Based Sample Preparation Method

2020 ◽  
Author(s):  
Hagit Barda ◽  
Irina Geppert ◽  
Avraham Raz ◽  
Rémy Berthier
Keyword(s):  
Sample Preparation ◽  
Focused Ion Beam ◽  
Preparation Method ◽  
Ion Beam ◽  
Void Formation ◽  
Electrical Characterization ◽  
In Situ Tem ◽  
Sample Preparation Method ◽  
Transition Electron Microscopy

Abstract An experimental setup is presented, that allows in-situ Transition Electron Microscopy (TEM) investigation of void formation and growth within fully embedded interconnect structure, as a response to an external bias. A special TEM holder is employed to perform in-situ I-V measurements across the Via, simultaneously monitoring the morphological and chemical changes surrounding the void. This work presents in detail a Focused Ion Beam (FIB) based sample preparation method that allows the analysis of a Cu single Via structure found in the advanced microelectronic 14nm FinFET technology, as well as preliminary TEM observations.

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