scholarly journals New Submicron Low Gate Leakage In0.52Al0.48As-In0.7Ga0.3As pHEMT for Low-Noise Applications

Micromachines ◽  
2021 ◽  
Vol 12 (12) ◽  
pp. 1497
Author(s):  
Mohamed Fauzi Packeer Mohamed ◽  
Mohamad Faiz Mohamed Omar ◽  
Muhammad Firdaus Akbar Jalaludin Khan ◽  
Nor Azlin Ghazali ◽  
Mohd Hendra Hairi ◽  
...  
Keyword(s):  
Band Gap ◽  
Breakdown Voltage ◽  
Impact Ionization ◽  
High Mobility ◽  
High Electron Mobility Transistor ◽  
Low Noise ◽  
Gate Length ◽  
High Electron ◽  
Gate Leakage ◽  
The Impact

Conventional pseudomorphic high electron mobility transistor (pHEMTs) with lattice-matched InGaAs/InAlAs/InP structures exhibit high mobility and saturation velocity and are hence attractive for the fabrication of three-terminal low-noise and high-frequency devices, which operate at room temperature. The major drawbacks of conventional pHEMT devices are the very low breakdown voltage (<2 V) and the very high gate leakage current (∼1 mA/mm), which degrade device and performance especially in monolithic microwave integrated circuits low-noise amplifiers (MMIC LNAs). These drawbacks are caused by the impact ionization in the low band gap, i.e., the InxGa(1−x)As (x = 0.53 or 0.7) channel material plus the contribution of other parts of the epitaxial structure. The capability to achieve higher frequency operation is also hindered in conventional InGaAs/InAlAs/InP pHEMTs, due to the standard 1 μm flat gate length technology used. A key challenge in solving these issues is the optimization of the InGaAs/InAlAs epilayer structure through band gap engineering. A related challenge is the fabrication of submicron gate length devices using I-line optical lithography, which is more cost-effective, compared to the use of e-Beam lithography. The main goal for this research involves a radical departure from the conventional InGaAs/InAlAs/InP pHEMT structures by designing new and advanced epilayer structures, which significantly improves the performance of conventional low-noise pHEMT devices and at the same time preserves the radio frequency (RF) characteristics. The optimization of the submicron T-gate length process is performed by introducing a new technique to further scale down the bottom gate opening. The outstanding achievements of the new design approach are 90% less gate current leakage and 70% improvement in breakdown voltage, compared with the conventional design. Furthermore, the submicron T-gate length process also shows an increase of about 58% and 33% in fT and fmax, respectively, compared to the conventional 1 μm gate length process. Consequently, the remarkable performance of this new design structure, together with a submicron gate length facilitatesthe implementation of excellent low-noise applications.

scholarly journals Low Gate Lag Normally-Off p-GaN/AlGaN/GaN High Electron Mobility Transistor with Zirconium Gate Metal

Crystals ◽  
2020 ◽  
Vol 10 (1) ◽  
pp. 25 ◽  
Author(s):  
Chia-Hao Liu ◽  
Hsien-Chin Chiu ◽  
Chong-Rong Huang ◽  
Kuo-Jen Chang ◽  
Chih-Tien Chen ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Schottky Contact ◽  
High Mobility ◽  
High Electron Mobility Transistor ◽  
Nitrogen Vacancy ◽  
High Electron ◽  
High Electron Mobility ◽  
Switching Power ◽  
Device Applications ◽  
The Impact

The impact of gate metal on the leakage current and breakdown voltage of normally-off p-GaN gate high-electron-mobility-transistor (HEMT) with nickel (Ni) and zirconium (Zr) metals were studied and investigated. In this study, a Zr metal as a gate contact to p-GaN/AlGaN/GaN high mobility transistor (HEMT) was first applied to improve the hole accumulation at the high gate voltage region. In addition, the ZrN interface is also beneficial for improving the Schottky barrier with low nitrogen vacancy induced traps. The features of Zr are low work function (4.05 eV) and high melting point, which are two key parameters with p-GaN Schottky contact at reversed voltage. Therefore, Zr/p-GaN interface exhibits highly potential for GaN-based switching power device applications.

Effect of gate length on breakdown voltage in AlGaN/GaN high-electron-mobility transistor

2016 ◽  
Vol 25 (2) ◽  
pp. 027303 ◽  
Author(s):  
Jun Luo ◽  
Sheng-Lei Zhao ◽  
Min-Han Mi ◽  
Wei-Wei Chen ◽  
Bin Hou ◽  
...  
Keyword(s):  
Breakdown Voltage ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
Gate Length ◽  
High Electron ◽  
High Electron Mobility

Infrared and Visible—Near Infrared Electroluminescence Developments for FA in AlGaN/GaN HEMTS on SiC

2010 ◽  
Author(s):  
M. Bouya ◽  
D. Carisetti ◽  
J.C. Clement ◽  
N. Malbert ◽  
N. Labat ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Near Infrared ◽  
High Electron Mobility Transistor ◽  
Low Noise ◽  
Civil Defense ◽  
Base Stations ◽  
Infrared Range ◽  
High Electron ◽  
Radar Applications ◽  
Gan Hemts

Abstract HEMT (High Electron Mobility Transistor) are playing a key role for power and RF low noise applications. They are crucial components for the development of base stations in the telecommunications networks and for civil, defense and space radar applications. As well as the improvement of the MMIC performances, the localization of the defects and the failure analysis of these devices are very challenging. To face these challenges, we have developed a complete approach, without degrading the component, based on front side failure analysis by standard (Visible-NIR) and Infrared (range of wavelength: 3-5 µm) electroluminescence techniques. Its complementarities and efficiency have been demonstrated through two case studies.

Investigation of Dielectric Resonator Oscillator Using High-Electron Mobility Transistor at 26GHz for Space Applications

2021 ◽  
pp. 2250046
Author(s):  
Pinku Ranjan ◽  
Swati Khandare
Keyword(s):  
Phase Noise ◽  
Electron Mobility ◽  
Dielectric Resonator ◽  
High Electron Mobility Transistor ◽  
Low Noise ◽  
Design System ◽  
High Electron ◽  
Space Applications ◽  
High Electron Mobility ◽  
High Frequencies

An oscillator is a vital component as the energy source in microwave telecommunication system. Microwave oscillators designed using Gunn diode have poor DC to RF efficiency. IMPact Ionization Avalanche Transit-Time diode (IMPATT) oscillators have the drawback of poor noise performance. The transistorized oscillators have a limitation to the maximum oscillation frequency which means that they cannot be used for oscillators designed for high frequencies. To design negative series feedback Dielectric Resonator Oscillator (DRO), the resonant unit uses a dielectric resonator (DR) since it is small in size, light in weight, has high-Quality ([Formula: see text]) factor, better stability and also it is inexpensive. It has the benefits of low-phase noise, low cost, miniaturization, high stability, applicable for devices designed at high frequencies and had already been widely applied, so the research on microwave dielectric oscillator has also been one of the focus of today’s microwave integrated circuits. DRO is widely used in electronic warfare, missile, radar and communication systems. The DRO incorporates High-Electron Mobility Transistor (HEMT) as an active device since it offers higher power-added efficiency combined with excellent low-noise figures and performance. The entire circuit of DRO using HEMT at 26[Formula: see text]GHz is designed using Agilent Advanced Design System (ADS) software. In this, DRO different measurements of parameters are done such as output power which is typically [Formula: see text][Formula: see text]dBm for 26[Formula: see text]GHz DRO, phase noise at 10[Formula: see text]kHz offset for 26[Formula: see text]GHz DRO it is 80[Formula: see text]dBc/Hz. The frequency pushing and frequency pulling for 26[Formula: see text]GHz DRO its typical values are 30[Formula: see text]kHz/V and 1[Formula: see text]MHz, respectively.

AlGaN Channel HEMT with Extremely High Breakdown Voltage

2011 ◽  
Vol 1324 ◽  
Author(s):  
Takuma Nanjo ◽  
Misaichi Takeuchi ◽  
Akifumi Imai ◽  
Yousuke Suzuki ◽  
Muneyoshi Suita ◽  
...  
Keyword(s):  
Breakdown Voltage ◽  
Drain Current ◽  
High Electron Mobility Transistors ◽  
Low Noise ◽  
Low Noise Amplifiers ◽  
High Electron ◽  
Field Plate ◽  
Electron Mobility Transistors ◽  
Doping Technique ◽  
Resistive Source

ABSTRACTA channel layer substitution of a wider bandgap AlGaN for a conventional GaN in high electron mobility transistors (HEMTs) is an effective method of enhancing the breakdown voltage. Wider bandgap AlGaN, however, should also increase the ohmic contact resistance. Si ion implantation doping technique was utilized to achieve sufficiently low resistive source/drain contacts. The fabricated AlGaN channel HEMTs with the field plate structure demonstrated good pinch-off operation with sufficiently high drain current density of 0.5 A/mm without noticeable current collapse. The obtained maximum breakdown voltages was 1700 V in the AlGaN channel HEMT with the gate-drain distance of 10 μm. These remarkable results indicate that AlGaN channel HEMTs could become future strong candidates for not only high-frequency devices such as low noise amplifiers but also high-power devices such as switching applications.

The AlInGaN back barrier effect on DC characteristics of AlGaN/GaN high electron mobility transistor

2019 ◽  
Vol 33 (18) ◽  
pp. 1950190
Author(s):  
Hai Li Wang ◽  
Peng Yang ◽  
Kun Xu ◽  
Xiang Yang Duan ◽  
Shu Xiang Sun
Keyword(s):  
Mole Fraction ◽  
Electron Mobility ◽  
Transport Model ◽  
High Electron Mobility Transistors ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Conduction Band Offset ◽  
Electron Mobility Transistors ◽  
The Impact

In this paper, we investigated the impact of thickness and mole fraction AlInGaN back barrier on the DC performance of AlGaN/GaN high electron mobility transistors (HEMTs) by numerical simulation. The simulations are performed using the hydrodynamic transport model (HD). The simulation results indicated that an inserted AlInGaN back barrier with increasing thickness and mole fraction could effectively confine the electron in the channel, resulting in a significant improvement of the channel current and transconductance. Additionally, the variation of conduction band offset and the increase of total number electron in the channel led to the threshold voltage moving toward a more negative value.

scholarly journals Compact Cryogenic Receivers for the 1.3 to 43 GHz Range

1988 ◽  
Vol 129 ◽  
pp. 499-500
Author(s):  
S. Weinreb ◽  
R. Norrod ◽  
M. W. Pospieszalski
Keyword(s):  
High Electron Mobility Transistor ◽  
Low Noise ◽  
Current Status ◽  
High Electron ◽  
Light Weight ◽  
Closed Cycle ◽  
High Electron Mobility ◽  
Dual Channel ◽  
Long Baseline ◽  
Very Long Baseline Array

A series of front-ends utilizing small closed-cycle refrigerators and very low-noise, high-electron-mobility transistor (HEMT) amplifiers have been developed for use in the Very Long Baseline Array (VLBA). The frequency bands, amplifier noise temperatures, expected system temperatures, and current status are shown in Table I. The receivers are designed to be light weight (∼ 55 pounds except for 105 pounds at 1.5 GHz) for ease of installation and maintenance, are easily remotely controlled and monitored, and provide dual-channel circular polarization capability. Detailed descriptions of some of the front-ends are given in VLBA technical reports.

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