scholarly journals Effects of Annealing Temperature on Optical Band Gap of Sol-gel Tungsten Trioxide Films

Micromachines ◽  
2018 ◽  
Vol 9 (8) ◽  
pp. 377 ◽  
Author(s):  
Guanguang Zhang ◽  
Kuankuan Lu ◽  
Xiaochen Zhang ◽  
Weijian Yuan ◽  
Muyang Shi ◽  
...  
Keyword(s):  
Band Gap ◽  
Tungsten Trioxide ◽  
Annealing Temperature ◽  
Optical Band Gap ◽  
Sol Gel ◽  
Wide Band ◽  
X Ray Diffraction ◽  
Electrochromic Devices ◽  
Wide Band Gap ◽  
Atomic Force

Tungsten trioxide (WO3) is a wide band gap semiconductor material that is used as an important electrochromic layer in electrochromic devices. In this work, the effects of the annealing temperature on the optical band gap of sol-gel WO3 films were investigated. X-ray Diffraction (XRD) showed that WO3 films were amorphous after being annealed at 100 °C, 200 °C and 300 °C, respectively, but became crystallized at 400 °C and 500 °C. An atomic force microscope (AFM) showed that the crystalline WO3 films were rougher than the amorphous WO3 films (annealed at 200 °C and 300 °C). An ultraviolet spectrophotometer showed that the optical band gap of the WO3 films decreased from 3.62 eV to 3.30 eV with the increase in the annealing temperature. When the Li+ was injected into WO3 film in the electrochromic reaction, the optical band gap of the WO3 films decreased. The correlation between the optical band gap and the electrical properties of the WO3 films was found in the electrochromic test by analyzing the change in the response time and the current density. The decrease in the optical band gap demonstrates that the conductivity increases with the corresponding increase in the annealing temperature.

scholarly journals Temperature-Controlled Crystal Size of Wide Band Gap Nickel Oxide and Its Application in Electrochromism

Micromachines ◽  
2021 ◽  
Vol 12 (1) ◽  
pp. 80
Author(s):  
Muyang Shi ◽  
Tian Qiu ◽  
Biao Tang ◽  
Guanguang Zhang ◽  
Rihui Yao ◽  
...  
Keyword(s):  
Nickel Oxide ◽  
Band Gap ◽  
Crystallite Size ◽  
Annealing Temperature ◽  
Optical Band Gap ◽  
Sol Gel ◽  
Wide Band ◽  
Degree Of Crystallinity ◽  
Wide Band Gap ◽  
Nio Films

Nickel oxide (NiO) is a wide band gap semiconductor material that is used as an electrochromic layer or an ion storage layer in electrochromic devices. In this work, the effect of annealing temperature on sol-gel NiO films was investigated. Fourier transform infrared spectroscopy (FTIR) showed that the formation of NiO via decomposition of the precursor nickel acetate occurred at about 300 °C. Meanwhile, an increase in roughness was observed by Atomic force microscope (AFM), and precipitation of a large number of crystallites was observed at 500 °C. X-ray Diffraction (XRD) showed that the NiO film obtained at such a temperature showed a degree of crystallinity. The film crystallinity and crystallite size also increased with increasing annealing temperature. An ultraviolet spectrophotometer was used to investigate the optical band gap of the colored NiO films, and it was found that the band gap increased from 3.65 eV to 3.74 eV with the increase in annealing temperature. An electrochromic test further showed that optical modulation density and coloring efficiency decreased with the increase in crystallite size. The electrochromic reaction of the nickel oxide film is more likely to occur at the crystal interface and is closely related to the change of the optical band gap. An NiO film with smaller crystallite size is more conducive to ion implantation and the films treated at 300 °C exhibit optimum electrochromic behavior.

scholarly journals Effect of the Ammonium Tungsten Precursor Solution with the Modification of Glycerol on Wide Band Gap WO3 Thin Film and Its Electrochromic Properties

Micromachines ◽  
2020 ◽  
Vol 11 (3) ◽  
pp. 311
Author(s):  
Jinxiang Liu ◽  
Guanguang Zhang ◽  
Kaiyue Guo ◽  
Dong Guo ◽  
Muyang Shi ◽  
...  
Keyword(s):  
Band Gap ◽  
Annealing Temperature ◽  
Volume Fraction ◽  
Sol Gel ◽  
Wide Band ◽  
Sample Solution ◽  
Scanning Calorimetry ◽  
Wide Band Gap ◽  
Monoclinic Crystal ◽  
Ammonium Tungstate

Tungsten trioxide (WO3) is a wide band gap semiconductor material, which is commonly not only used, but also investigated as a significant electrochromic layer in electrochromic devices. WO3 films have been prepared by inorganic and sol-gel free ammonium tungstate ((NH4)2WO4), with the modification of glycerol using the spin coating technique. The surface tension, the contact angle and the dynamic viscosity of the precursor solutions demonstrated that the sample solution with a 25% volume fraction of glycerol was optimal, which was equipped to facilitate the growth of WO3 films. The thermal gravimetric and differential scanning calorimetry (TG-DSC) analysis represented that the optimal sample solution transformed into the WO3 range from 220 °C to 300 °C, and the transformation of the phase structure of WO3 was taken above 300 °C. Fourier transform infrared spectroscopy (FT-IR) spectra analysis indicated that the composition within the film was WO3 above the 300 °C annealing temperature, and the component content of WO3 was increased with the increase in the annealing temperature. The X-ray diffraction (XRD) pattern revealed that WO3 films were available for the formation of the cubic and monoclinic crystal structure at 400 °C, and were preferential for growing monoclinic WO3 when annealed at 500 °C. Atomic force microscope (AFM) images showed that WO3 films prepared using ammonium tungstate with modification of the glycerol possessed less rough surface roughness in comparison with the sol-gel-prepared films. An ultraviolet spectrophotometer (UV) demonstrated that the sample solution which had been annealed at 400 °C obtained a high electrochromic modulation ability roughly 40% at 700 nm wavelength, as well as the optical band gap (Eg) of the WO3 films ranged from 3.48 eV to 3.37 eV with the annealing temperature increasing.

DEPOSITION OF WIDE BAND GAP DLC FILMS USING R.F. PECVD AT VERY LOW POWER

2011 ◽  
Vol 25 (29) ◽  
pp. 3941-3949 ◽  
Author(s):  
P. K. BARHAI ◽  
RISHI SHARMA ◽  
B. B. NAYAK
Keyword(s):  
Band Gap ◽  
Chemical Vapor ◽  
Wide Band ◽  
Carbon Films ◽  
Wide Band Gap ◽  
Force Microscopy ◽  
Atomic Force ◽  
Frequency Plasma ◽  
Bending Modes ◽  
Deposited Films

Wide band gap diamond-like carbon films (DLCs) are deposited on silicon (1 0 0) substrates using capacitive coupled radio frequency plasma-enhanced chemical vapor deposition (R.F. PECVD) technique. The deposition of films is carried out at a constant pressure (~5×10-2 mbar ) using acetylene precursor diluted with argon at constant R.F. power of 5 W. Raman spectroscopy of deposited DLC films shows broad G peak near 1550 cm-1 and a weak D peak near 1320 cm1. FTIR plot of DLC films shows a peak near 2900 cm-1 corresponding to C–H stretching mode and peaks below 2000 cm-1 corresponding to C–C modes and C–H bending modes. Maximum hardness of the deposited films is found to be ~15 GPa. Band gap of the DLC films is ~3.5 eV. Scanning electron microscopy (SEM) and atomic force microscopy (AFM) pictures show that the deposited films are amorphous. Deposition mechanism of wide band gap DLC film is explained on the basis of subplantation model.

Dielectric Properties of Sol-Gel Derived MgAl2O4 Thin Films

2012 ◽  
Vol 151 ◽  
pp. 314-318
Author(s):  
Ching Fang Tseng ◽  
Cheng Hsing Hsu ◽  
Chun Hung Lai
Keyword(s):  
Thin Films ◽  
Annealing Temperature ◽  
Sol Gel ◽  
Dissipation Factor ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Preheating Temperature ◽  
Surface Morphologies

This paper describes microstructure characteristics of MgAl2O4 thin films were deposited by sol-gel method with various preheating temperatures and annealing temperatures. Particular attention will be paid to the effects of a thermal treatment in air ambient on the physical properties. The annealed films were characterized using X-ray diffraction. The surface morphologies of treatment film were examined by scanning electron microscopy and atomic force microscopy. At a preheating temperature of 300oC and an annealing temperature of 700oC, the MgAl2O4 films with 9 μm thickness possess a dielectric constant of 9 at 1 kHz and a dissipation factor of 0.18 at 1 kHz.

Stress origin and relaxation in epitaxial AlN thin films on SiC

2001 ◽  
Vol 696 ◽  
Author(s):  
Ravi Bathe ◽  
R.D. Vispute ◽  
Daniel Habersat ◽  
R. P. Sharma ◽  
T. Venkatesan ◽  
...  
Keyword(s):  
Thin Films ◽  
Rutherford Backscattering Spectrometry ◽  
Wide Band ◽  
X Ray Diffraction ◽  
Wide Band Gap ◽  
X Ray ◽  
Force Microscopy ◽  
Ion Channeling ◽  
Atomic Force ◽  
Highly Strained

AbstractWe have investigated the epitaxy, surfaces, interfaces, and defects in AlN thin films grown on SiC by pulsed laser deposition. The stress origin, evolution, and relaxation in these films is reported. The crystalline structure and surface morphology of the epitaxially grown AlN thin films on SiC (0001) substrates have been studied using x-ray diffraction (θ–2θ, ω, and Ψ scans) and atomic force microscopy, respectively. The defect analysis has been carried out by using Rutherford backscattering spectrometry and ion channeling technique. The films were grown at various substrate temperatures ranging from room temperature to 1100 °C. X-ray diffraction measurements show highly oriented AlN films when grown at temperatures of 750- 800 °C, and single crystals above 800 °C. The films grown in the temperature range of 950 °C to 1000 °C have been found to be highly strained, whereas the films grown above 1000 °C were found to be cracked along the crystallographic axes. The results of stress as a function of growth temperature, thermal mismatch, growth mode, and buffer layer thickness will be presented, and the implications of these results for wide band gap power electronics will be discussed.

INFLUENCE OF ANNEALING TEMPERATURE ON THE CHARACTERISTICS OF NANOCRYSTALLINE SnO2 THIN FILMS PRODUCED BY Sol–Gel AND CHEMICAL BATH DEPOSITION FOR GAS SENSOR APPLICATIONS

2017 ◽  
Vol 24 (07) ◽  
pp. 1750104 ◽  
Author(s):  
SELMA M. H. AL-JAWAD ◽  
ABDULHUSSAIN K. ELTTAYF ◽  
AMEL S. SABER
Keyword(s):  
Band Gap ◽  
Gas Sensor ◽  
Chemical Bath Deposition ◽  
Annealing Temperature ◽  
Optical Band Gap ◽  
Sol Gel ◽  
Dip Coating ◽  
Rutile Structure ◽  
Sensor Applications ◽  
Average Grain Size

Pure nanocrystalline SnO2 films were grown on a clean glass substrate by using sol–gel dip coating and chemical bath deposition (CBD) techniques for gas sensor applications. The films were annealed in air at 300[Formula: see text]C, 400[Formula: see text]C, and 500[Formula: see text]C for 60[Formula: see text]min. The deposited films with a thickness of approximately 300 [Formula: see text] 20 nm were analyzed through X-ray diffraction, scanning electron microscopy (SEM), atomic force microscopy (AFM), and optical absorption spectroscopy. Results revealed that the films produced by dip coating exhibited a tetragonal rutile structure and those produced by CBD showed a tetragonal rutile and orthorhombic structure. The crystalline sizes of the films produced by dip coating annealed at 300[Formula: see text]C, 400[Formula: see text]C, and 500[Formula: see text]C were 8, 14, and 22.34 nm and those for CBD films at these temperatures were 10, 15, and 22 nm, respectively. AFM and SEM results indicated that the average grain size increased as annealing temperature increased. The transmittance and absorbance spectra were then recorded at wavelengths ranging from 300[Formula: see text]nm to 1000[Formula: see text]nm. The films produced by both the methods yielded high transmission at visible regions. The optical band gap energy of dip-coated films also increased as annealing temperature increased. In particular, their optical band gap energies were 3.5, 3.75, and 3.87[Formula: see text]eV at 300[Formula: see text]C, 400[Formula: see text]C, and 500[Formula: see text]C, respectively. By comparison, the energy band gap of CBD-prepared films decreased as annealing temperature increased, and their corresponding band gaps were 3.95, 3.85, and 3.8[Formula: see text]eV at the specified annealing temperatures. The films were further investigated in terms of their sensing abilities for carbon monoxide (CO) gas at 50 ppm by measuring their sensitivity to this gas at different times and temperatures. Our results demonstrated that dip-coated and CBD-prepared films were highly sensitive to CO at 200[Formula: see text]C and 250[Formula: see text]C, respectively.

THE INVESTIGATION ON STABILITY AND STRUCTURAL PROPERTIES OF COHESION-BASED NANOSTRUCTURES MATERIAL

2013 ◽  
Vol 27 (27) ◽  
pp. 1350153 ◽  
Author(s):  
ALI BAHARI ◽  
REZA GHOLIPUR ◽  
MARYAM DERAKHSHI
Keyword(s):  
Annealing Temperature ◽  
Sol Gel ◽  
Growth Mode ◽  
X Ray Diffraction ◽  
Low Temperature Synthesis ◽  
Temperature Synthesis ◽  
X Ray ◽  
Annealing Temperatures ◽  
Atomic Force ◽  
Transmission Electron

Styrene-doped ZrLaO y nanostructures were obtained by sol–gel method low-temperature synthesis. The nanostructures were characterized by X-ray diffraction (XRD), scanning electron microscope (SEM), atomic force microscope (AFM) and transmission electron microscopy (TEM) techniques. The observation using SEM and TEM revealed that the ring-shaped nanostructures were very uniform. Further characterization using XRD disclosed that the cohesion of the samples was controllable with annealing temperatures in the range of 800–1500°C. Cohesion property was investigated for the samples. The cohesion increased when increasing the annealing temperature. This was linked to the reinforcement of the oxygen bound on the ZrLaO y nanostructures The shape of nanostructures showed a transformation from a ring-shaped growth mode to a hole-surfaced growth mode with increasing annealing temperature. The styrene-doped ZrLaO y nanostructures with controllable crystallinity will have great potential for various applications in fuel, cells, batteries, electronics devices and chemical sensors.

Electron Diffusion in ZnO Nanomaterial: An Ac Impedance Investigation

2011 ◽  
Vol 312-315 ◽  
pp. 393-398
Author(s):  
Roshidah Rusdi ◽  
Norlida Kamarulzaman ◽  
Mohamed Nor Sabirin ◽  
Zurina Osman ◽  
Azilah Abd Rahman
Keyword(s):  
Sol Gel ◽  
Wide Band ◽  
Ac Impedance ◽  
X Ray Diffraction ◽  
Wide Band Gap ◽  
Electron Diffusion ◽  
Electron Conduction ◽  
Diffusion Characteristics ◽  
Zno Nanomaterials ◽  
Electrical Components

ZnO is a wide band gap semiconductor with many applications such as in solar cells, varistors, and other electrical components. The ZnO material was synthesized using a sol-gel method. The material was characterized using X-Ray diffraction (XRD) and scanning electron microscopy (SEM). The material is pure and single phase. Electron conduction in ZnO nanomaterials was done using alternating current (ac) impedance. The frequency ranges of the measurements used were 1x 10-3 Hz to 1x 106 Hz and the ac impedance measurements were done within a temperature range of 60oC to 100oC. Nyquist plots were drawn and bulk resistances were obtained. Subsequently, conductivity values were calculated and the diffusion characteristics were obtained. From further analysis of the conductivities with temperature, the diffusion of electrons in the material was studied. It was found that the conductivity increased with the increase of temperature which meant that the rate of diffusion of the electrons through the materials also increased. An Arrhenius relation was concluded for the electron diffusion in the ZnO nanomaterials.

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