scholarly journals Raman Scattering Study on the Influence of E-Beam Bombardment on Si Electron Lens

Molecules ◽  
2021 ◽  
Vol 26 (9) ◽  
pp. 2766
Author(s):  
Geon-Woo Lee ◽  
Young-Bok Lee ◽  
Dong-Hyun Baek ◽  
Jung-Gon Kim ◽  
Ho-Seob Kim
Keyword(s):  
Electron Beam ◽  
Raman Scattering ◽  
Photoelectron Spectroscopy ◽  
Micro Electro Mechanical System ◽  
Si Substrate ◽  
X Ray ◽  
Electron Lens ◽  
Scattering Study ◽  
Pass Through ◽  
Non Destructive

Microcolumns have a stacked structure composed of an electron emitter, electron lens (source lens), einzel lens, and a deflector manufactured using a micro electro-mechanical system process. The electrons emitted from the tungsten field emitter mostly pass through the aperture holes. However, other electrons fail to pass through because of collisions around the aperture hole. We used Raman scattering measurements and X-ray photoelectron spectroscopy analyses to investigate the influence of electron beam bombardment on a Si electron lens irradiated by acceleration voltages of 0, 20, and 30 keV. We confirmed that the crystallinity was degraded, and carbon-related contamination was detected at the surface and edge of the aperture hole of the Si electron lens after electron bombardment for 24 h. Carbon-related contamination on the surface of the Si electron lens was verified by analyzing the Raman spectra of the carbon-deposited Si substrate using DC sputtering and a carbon rod sample. We report the crystallinity and the origin of the carbon-related contamination of electron Si lenses after electron beam bombardment by non-destructive Raman scattering and XPS analysis methods.

Determination of the Thickness of Sio2-Layers on Si by X-Ray Analysis and by X-Ray Photoelectron Spectroscopy

1979 ◽  
Vol 23 ◽  
pp. 223-230
Author(s):  
Maria F. Ebel ◽  
H. Ebel ◽  
J. Wernisch
Keyword(s):  
Photoelectron Spectroscopy ◽  
Count Rate ◽  
Silicon Wafers ◽  
Electron Spectrometer ◽  
Si Substrate ◽  
Oxide Layers ◽  
X Ray ◽  
Information Depth ◽  
Pass Through

It is feasible to investigate the thickness of oxide layers on silicon wafers by X-radiation in the 0.1-10 nm thickness range. For example, X-ray photoelectron spectroscopy (XPS) is a well applicable technique, with information depth of a few nm. Fig. 1 presents the principle of this method. An impinging characteristic X-radiation hν (e.g. Al Kα) count rate ejects Si 2p photoelectrons from the Si-substrate (d), with count rate n2, which, on their way to the electron spectrometer, have to pass through the SiOx-interface (c), the SiO2-layer (b) and the contamination overlayer (a), whereas Si 2p photoelectrons ejected from the SiO2-layer, with count rate n2 have just to penetrate the contamination overlayer. The Si 2p electrons originating from the SiOx-interface, for the situation shown in Fig. 1, can be added to the substrate count rate.

Deposition of Cobalt Doped Zinc Oxide Thin Film Nano-Composites Via Pulsed Electron Beam Ablation

MRS Advances ◽  
2016 ◽  
Vol 1 (6) ◽  
pp. 433-439 ◽  
Author(s):  
Asghar Ali ◽  
Patrick Morrow ◽  
Redhouane Henda ◽  
Ragnar Fagerberg
Keyword(s):  
Zinc Oxide ◽  
Electron Beam ◽  
Binding Energy ◽  
Photoelectron Spectroscopy ◽  
Xrd Analysis ◽  
Sem Analysis ◽  
Oxide Thin Film ◽  
X Ray ◽  
Pulsed Electron Beam ◽  
Deposited Films

AbstractThis study reports on the preparation of cobalt doped zinc oxide (Co:ZnO) films via pulsed electron beam ablation (PEBA) from a single target containing 20 w% Co on sapphire (0001) and silicon (100) substrates. The films have been deposited at various temperatures (350оC, 400оC, 450оC) and pulse frequencies (2 Hz, 4 Hz), under a background argon (Ar) pressure of about 3 mtorr, and an accelerating voltage of 14 kV. The surface morphology has been examined by atomic force microscopy (AFM) and scanning electron microscopy (SEM). According to SEM analysis, the films consist of nano-globules whose size is in the range of 80-178 nm. Energy dispersive x-ray spectroscopy (EDX) reveals that deposition is congruent and the prepared films contain ∼20±5 w% cobalt. It has been found that the nano-globules in the deposited films are cobalt-rich zones containing ∼70 w% Co. From x-ray photoelectron spectroscopy (XPS) analysis, Co 2p3/2 peaks indicate that the deposited films contain CoO (binding energy = 780.5 eV) as well as metallic Co (binding energy = 778.1-778.5 eV). X-ray diffraction (XRD) analysis supports the presence of metallic Co hcp phase (2ϴ = 44.47° and 47.43°) in the films.

The piezoresistive properties research of SiC thin films prepared by RF magnetron sputtering

2019 ◽  
Vol 33 (15) ◽  
pp. 1950152 ◽  
Author(s):  
Jing Wu ◽  
Xiaofeng Zhao ◽  
Chunpeng Ai ◽  
Zhipeng Yu ◽  
Dianzhong Wen
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Cantilever Beam ◽  
Photoelectron Spectroscopy ◽  
Film Surface ◽  
Rf Magnetron Sputtering ◽  
Micro Electro Mechanical System ◽  
Gauge Factor ◽  
X Ray ◽  
Sputtering Power

To research the piezoresistive properties of SiC thin films, a testing structure consisting of a cantilever beam, SiC thin films piezoresistors and a Cr/Pt electrode is proposed in this paper. The chips of testing structure were fabricated by micro-electro-mechanical system (MEMS) technology on a silicon wafer with [Formula: see text]100[Formula: see text] orientation, in which SiC thin films were deposited by using radio-frequency (13.56 MHz) magnetron sputtering method. The effect of sputtering power, annealing temperature and time on the microstructure and morphology of the SiC thin films were investigated by the X-ray diffraction (XRD) and scanning electron microscopy (SEM). It indicates that a good continuity and uniform particles on the SiC thin film surface can be achieved at sputtering power of 160 W after annealing. To verify the existence of Si–C bonds in the thin films, X-ray photoelectron spectroscopy (XPS) was used. Meanwhile, the piezoresistive properties of SiC thin films piezoresistors were measured using the proposed cantilever beam. The test result shows that it is possible to achieve a gauge factor of 35.1.

p-Type dopant incorporation and surface charge properties of catalyst-free GaN nanowires revealed by micro-Raman scattering and X-ray photoelectron spectroscopy

Nanoscale ◽  
2014 ◽  
Vol 6 (17) ◽  
pp. 9970-9976 ◽  
Author(s):  
Q. Wang ◽  
X. Liu ◽  
M. G. Kibria ◽  
S. Zhao ◽  
H. P. T. Nguyen ◽  
...  
Keyword(s):  
Raman Scattering ◽  
Surface Charge ◽  
Photoelectron Spectroscopy ◽  
X Ray ◽  
Gan Nanowires ◽  
Catalyst Free ◽  
Dopant Incorporation ◽  
P Type

p-Type dopant (magnesium) incorporation and surface charge properties of catalyst-free GaN nanowires are revealed by micro-Raman scattering and X-ray photoelectron spectroscopy.

scholarly journals Montecarlo Simulation and HAXPES Analysis of Organosilane Segregation in Titania Xerogel Films; Towards a Generic Surface Chemofunctionalization Process

Surfaces ◽  
2020 ◽  
Vol 3 (3) ◽  
pp. 352-365
Author(s):  
Javier Mateo Moreno ◽  
Rodrigo Calvo Membibre ◽  
Sergio Pinilla Yanguas ◽  
Juan Rubio Zuazo ◽  
Miguel Manso Siván
Keyword(s):  
Photoelectron Spectroscopy ◽  
Surface Segregation ◽  
Titanium Isopropoxide ◽  
Condensation Process ◽  
X Ray ◽  
Depth Profiles ◽  
Partial Charges ◽  
Xerogel Films ◽  
Non Destructive

The formation of xerogels implies a sequence of hydrolysis and condensation reactions, which are intricate to analyze in heteromolecular sols. We analyze by probabilistic Montecarlo methods the development of hybrid organosilane–titania xerogels and illustrate how partial charges of the reacting molecules can help estimating relative probabilities for the condensation of the molecules. Since the condensation rate of Ti alkoxides is much higher than the corresponding rate of Si alkoxides (especially if bearing a non-hydrolizable group), by imposing a fast condensation process in agreement with low pH kinetics, the process leads to a surface segregation of the organosilane. The simulation results are compared with results of characterization of thin condensates of two different organosilanes within a titanium–isopropoxide matrix. Non-destructive in-depth profiles were obtained by hard x-ray photoelectron spectroscopy, which can resolve through estimation of Si and specific moieties of the organosilane molecules the progress of the condensation. These results are relevant for the generalization of chemo-functionalization processes by kinetic demixing of organosilanes, which have myriad applications in biomedicine and biotechnology.

Sign in / Sign up

Export Citation Format

Share Document