scholarly journals Nanostructured Lead Sulphide Depositions by AACVD Technique Using Bis(Isobutyldithiophosphinato)Lead(II) Complex as Single Source Precursor and Its Impedance Study

Nanomaterials ◽  
2020 ◽  
Vol 10 (8) ◽  
pp. 1438
Author(s):  
Sadia Iram ◽  
Azhar Mahmood ◽  
Effat Sitara ◽  
Syeda Aqsa Batool Bukhari ◽  
Syeda Arooj Fatima ◽  
...  
Keyword(s):  
Chemical Vapour ◽  
Complex Impedance ◽  
Resonance Spectroscopy ◽  
Relaxation Processes ◽  
Single Source ◽  
Lead Sulphide ◽  
Low Frequencies ◽  
Glass Substrates ◽  
Chemical Vapour Deposition Technique ◽  
Single Source Precursor

This communication reports the synthesis of bis(diisobutyldithiophosphinato)lead(II) complex and its subsequent application as a single source precursor for the nanostructured deposition of lead sulphide semiconductors and its impedance to explore its scope in the field of electronics. Synthesized complex was characterized by microelemental analysis, nuclear magnetic resonance spectroscopy, infrared spectroscopy and thermogravimetric analysis. This complex was decomposed using the aerosol-assisted chemical vapour deposition technique at different temperatures to grow PbS nanostructures on glass substrates. These nanostructures were analyzed by XRD, SEM, TEM and EDX methods. Impedance spectroscopic measurements were performed for PbS in the frequency range of 40 to 6 MHz at room temperature. In a complex impedance plane plot, two relaxation processes were exhibited due to grains and grain boundaries contribution. A high value of dielectric constant was observed at low frequencies, which was explained on the basis of Koops phenomenological model and Maxwell–Wagner type polarization. Frequency-dependent AC conductivity results were compliant with Jonscher power law, while capacitance–voltage loop had a butterfly shape. These impedance spectroscopic results have corroborated the ferroelectric nature of the resultant PbS nanodeposition.

Large Area Flexible Amorphous Silicon Position Sensitive Detectors

2000 ◽  
Vol 609 ◽  
Author(s):  
Elvira M.C. Fortunato ◽  
Donatello Brida ◽  
Isabel M.M. Ferreira ◽  
H. M.B. Åguas ◽  
Patrícia Nunes ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Spectral Response ◽  
Chemical Vapour ◽  
Open Circuit ◽  
Large Area ◽  
Force Microscopy ◽  
Glass Substrates ◽  
Chemical Vapour Deposition Technique ◽  
Position Sensitive ◽  
Position Sensitive Detectors

ABSTRACTLarge area thin film position sensitive detectors based on amorphous silicon technology have been prepared on polyimide substrates using the conventional plasma enhanced chemical vapour deposition technique. The sensors have been characterised by spectral response, illuminated I-V characteristics and position detectability measurements. The obtained one dimensional position sensors with 5 mm wide and 60 mm long present a maximum spectral response at 600 nm, an open circuit voltage of 0.6 V and a position detectability with a correlation of 0.9989 associated to a standard deviation of 1×10−2, comparable to those ones produced on glass substrates. The surface of the sensors at each stage of fabrication was investigated by Atomic Force Microscopy.

scholarly journals [Ge(TenBu)4] – a single source precursor for the chemical vapour deposition of germanium telluride thin films

2019 ◽  
Vol 48 (1) ◽  
pp. 117-124 ◽  
Author(s):  
Samantha L. Hawken ◽  
Ruomeng Huang ◽  
C. H. (Kees) de Groot ◽  
Andrew L. Hector ◽  
Marek Jura ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Single Source ◽  
Germanium Telluride ◽  
Single Source Precursor

Reaction of activated germanium with nBu2Te2 in THF solution was shown to be more effective for the preparation of the germanium(iv) tellurolate compound, [Ge(TenBu)4], than reaction of GeCl4 with LiTenBu in THF.

Single-source precursor for chemical vapour deposition of collapsed boron nitride nanotubes

2006 ◽  
Vol 17 (23) ◽  
pp. 5882-5888 ◽  
Author(s):  
Chengchun Tang ◽  
Yoshio Bando ◽  
Guozhen Shen ◽  
Chunyi Zhi ◽  
Dmitri Golberg
Keyword(s):  
Boron Nitride ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Boron Nitride Nanotubes ◽  
Single Source ◽  
Single Source Precursor

Preparation of Nickel Sulfide Thin Films and Nanocrystallites Using Nickel Furfuraldehyde Thiosemicarbazone as Single-Source Precursor

2011 ◽  
Vol 383-390 ◽  
pp. 3828-3834 ◽  
Author(s):  
Ajay V. Gole ◽  
Shivram S. Garje
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Growth Temperature ◽  
Nickel Sulfide ◽  
Hexagonal Phase ◽  
Chemical Vapour ◽  
X Rays ◽  
Single Source ◽  
Sem Images ◽  
Single Source Precursor

Nickel furfuraldehyde thiosemcarbabazone adduct of the type, NiCl2(L)2(L = furfuraldehyde thiosemicarbazone) was synthesized by the reaction between nickel dichloride hexahydrate and furfuraldehyde thiosemicarbazone in 1:2 stoichiometry. The resulting compound was characterised by elemental analysis, IR,1H and13C{1H} NMR spectral data. It was further used as a single-source precursor for the deposition of nickel sulfide thin films by aerosol assisted chemical vapour deposition (AACVD) technique and the nickel sulfide nanocrystallites by pyrolysis and solvothermal decomposition methods. The thin films obtained were characterised by powder X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive analysis by X-rays (EDAX) and atomic force microscopy (AFM). The nanocrystallites obtained were also characterized by XRD, EDAX as well as transmission electron microscopy (TEM). The SEM images of the thin films show formation of different morphologies of nickel sulfide, i.e. nanoball-like, nanowires to flower-like depending on the growth temperature. The mechanism for the variation of the morphology with the growth temperature has been proposed. The XRD of the nanocrystallites obtained matches with the hexagonal phase of nickel sulfide and the TEM images show formation of 10-50 nm spherical nano-crystals.

Homoleptic zirconium amidates: single source precursors for the aerosol-assisted chemical vapour deposition of ZrO2

2016 ◽  
Vol 4 (45) ◽  
pp. 10731-10739 ◽  
Author(s):  
Amanda L. Catherall ◽  
Michael S. Hill ◽  
Andrew L. Johnson ◽  
Gabriele Kociok-Köhn ◽  
Mary F. Mahon
Keyword(s):  
Thin Films ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Single Source ◽  
Single Source Precursors ◽  
Single Source Precursor ◽  
Original Family

We report the development of a true single source precursor for the growth of zirconia thin films by aerosol-assisted chemical vapour deposition using an original family of zirconium(iv) amidate derivatives.

Fabrication of copper–zinc oxide composite thin films from single source precursor by aerosol assisted chemical vapour deposition

Polyhedron ◽  
2008 ◽  
Vol 27 (16) ◽  
pp. 3337-3342 ◽  
Author(s):  
Muhammad Shahid ◽  
Muhammad Mazhar ◽  
Mohammad A. Malik ◽  
Paul O’ Brien ◽  
James Raftery
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Single Source ◽  
Oxide Composite ◽  
Single Source Precursor ◽  
Copper Zinc ◽  
Copper Zinc Oxide

scholarly journals Bis(piperidinedithiocarbamato)pyridinecadmium(ii) as a single-source precursor for the synthesis of CdS nanoparticles and aerosol-assisted chemical vapour deposition (AACVD) of CdS thin films

2014 ◽  
Vol 38 (12) ◽  
pp. 6073-6080 ◽  
Author(s):  
Sixberth Mlowe ◽  
David J. Lewis ◽  
M. Azad Malik ◽  
James Raftery ◽  
Egid B. Mubofu ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Cds Nanoparticles ◽  
Single Source ◽  
Dithiocarbamate Complex ◽  
Single Source Precursor ◽  
Cds Thin Films

The pyridine adduct of a cadmium piperidine dithiocarbamate complex was used to deposit CdS thin films and for the synthesis of CdS nanoparticles.

Sign in / Sign up

Export Citation Format

Share Document