scholarly journals High-Quality Single-Crystalline β-Ga2O3 Nanowires: Synthesis to Nonvolatile Memory Applications

Nanomaterials ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 2013
Author(s):  
Chandrasekar Sivakumar ◽  
Gang-Han Tsai ◽  
Pei-Fang Chung ◽  
Babu Balraj ◽  
Yen-Fu Lin ◽  
...  

One of the promising nonvolatile memories of the next generation is resistive random-access memory (ReRAM). It has vast benefits in comparison to other emerging nonvolatile memories. Among different materials, dielectric films have been extensively studied by the scientific research community as a nonvolatile switching material over several decades and have reported many advantages and downsides. However, less attention has been given to low-dimensional materials for resistive memory compared to dielectric films. Particularly, β-Ga2O3 is one of the promising materials for high-power electronics and exhibits the resistive switching phenomenon. However, low-dimensional β-Ga2O3 nanowires have not been explored in resistive memory applications, which hinders further developments. In this article, we studied the resistance switching phenomenon using controlled electron flow in the 1D nanowires and proposed possible resistive switching and electron conduction mechanisms. High-density β-Ga2O3 1D-nanowires on Si (100) substrates were produced via the VLS growth technique using Au nanoparticles as a catalyst. Structural characteristics were analyzed via SEM, TEM, and XRD. Besides, EDS, CL, and XPS binding feature analyses confirmed the composition of individual elements, the possible intermediate absorption sites in the bandgap, and the bonding characteristics, along with the presence of various oxygen species, which is crucial for the ReRAM performances. The forming-free bipolar resistance switching of a single β-Ga2O3 nanowire ReRAM device and performance are discussed in detail. The switching mechanism based on the formation and annihilation of conductive filaments through the oxygen vacancies is proposed, and the possible electron conduction mechanisms in HRS and LRS states are discussed.

2016 ◽  
Vol 663 ◽  
pp. 419-423 ◽  
Author(s):  
Sungjun Kim ◽  
Hyungjin Kim ◽  
Sunghun Jung ◽  
Min-Hwi Kim ◽  
Sang-Ho Lee ◽  
...  

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Miguel Angel Lastras-Montaño ◽  
Osvaldo Del Pozo-Zamudio ◽  
Lev Glebsky ◽  
Meiran Zhao ◽  
Huaqiang Wu ◽  
...  

AbstractRatio-based encoding has recently been proposed for single-level resistive memory cells, in which the resistance ratio of a pair of resistance-switching devices, rather than the resistance of a single device (i.e. resistance-based encoding), is used for encoding single-bit information, which significantly reduces the bit error probability. Generalizing this concept for multi-level cells, we propose a ratio-based information encoding mechanism and demonstrate its advantages over the resistance-based encoding for designing multi-level memory systems. We derive a closed-form expression for the bit error probability of ratio-based and resistance-based encodings as a function of the number of levels of the memory cell, the variance of the distribution of the resistive states, and the ON/OFF ratio of the resistive device, from which we prove that for a multi-level memory system using resistance-based encoding with bit error probability x, its corresponding bit error probability using ratio-based encoding will be reduced to $$x^2$$ x 2 at the best case and $$x^{\sqrt{2}}$$ x 2 at the worst case. We experimentally validated these findings on multiple resistance-switching devices and show that, compared to the resistance-based encoding on the same resistive devices, our approach achieves up to 3 orders of magnitude lower bit error probability, or alternatively it could reduce the cell’s programming time and programming energy by up 5–10$$\times$$ × , while achieving the same bit error probability.


2016 ◽  
Vol 4 (46) ◽  
pp. 10967-10972 ◽  
Author(s):  
Sujaya Kumar Vishwanath ◽  
Jihoon Kim

The all-solution-based memory devices demonstrated excellent bipolar switching behavior with a high resistive switching ratio of 103, excellent endurance of more than 1000 cycles, stable retention time greater than 104s at elevated temperatures, and fast programming speed of 250 ns.


2018 ◽  
Vol 11 (02) ◽  
pp. 1850038 ◽  
Author(s):  
Shuangsuo Mao ◽  
Xuejiao Zhang ◽  
Bai Sun ◽  
Bing Li ◽  
Shouhui Zhu ◽  
...  

In this work, Ti and SrCoO3 (SCO) have been used for preparing the resistance random access memory (RRAM) with Ti/(SCO/Ag)[Formula: see text]/SCO/Ti ([Formula: see text], 1, 2, 3) structures. It is found that the as-prepared device with Ti/SCO/Ti ([Formula: see text]) structure represents the nonobvious resistive switching effect. However, it displays a more obvious resistive switching effect in the Ti/SCO/Ag/SCO/Ti ([Formula: see text]) device. In particular, a multi-stage switching phenomenon is observed when ultra-thin Ag films was embedded into SrCoO3 multilayer films. Finally, the multi-stage switching effect is explained by the model of conductive filaments formed step-by-step.


2021 ◽  
Vol 118 (11) ◽  
pp. 112106
Author(s):  
Jinsu Jung ◽  
Dongjoo Bae ◽  
Sungho Kim ◽  
Hee-Dong Kim

2009 ◽  
Vol 66 ◽  
pp. 131-134
Author(s):  
X. Cao ◽  
Xiao Min Li ◽  
Wei Dong Yu ◽  
Rui Yang ◽  
Xin Jun Liu

Polycrystalline NiO thin films were fabricated on Pt (111)/Ti/SiO2/Si substrates by thermal oxidation of the evaporated Ni films. Pt/NiO/Pt structures were prepared, and they showed reversible resistance switching behaviors. When the compliance set current was varied from 5 mA to 40 mA, the on-state currents increased, while the on-state resistances decreased. It is probably attributed to higher current compliance resulted in the formation of stronger and less resistive filaments, which in turn need more energy and power for their rupture. The resistive switching in NiO thin films is closely related to the formation and rupture of conducting filaments.


2013 ◽  
Vol 528 ◽  
pp. 224-228 ◽  
Author(s):  
Min-Chen Chen ◽  
Ting-Chang Chang ◽  
Yi-Chieh Chiu ◽  
Shih-Cheng Chen ◽  
Sheng-Yao Huang ◽  
...  

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