scholarly journals Scavenger with Protonated Phosphite Ions for Incredible Nanoscale ZrO2-Abrasive Dispersant Stability Enhancement and Related Tungsten-Film Surface Chemical–Mechanical Planarization

Nanomaterials ◽  
2021 ◽  
Vol 11 (12) ◽  
pp. 3296
Author(s):  
Seong-In Kim ◽  
Gi-Ppeum Jeong ◽  
Seung-Jae Lee ◽  
Jong-Chan Lee ◽  
Jun-Myeong Lee ◽  
...  
Keyword(s):  
Fenton Reaction ◽  
Chemical Mechanical Planarization ◽  
Film Surface ◽  
Sio2 Film ◽  
Surface Chemical ◽  
H2o2 Decomposition ◽  
Surface Polishing ◽  
Reaction Acceleration ◽  
Scaling Down ◽  
Stability Enhancement

For scaling-down advanced nanoscale semiconductor devices, tungsten (W)-film surface chemical mechanical planarization (CMP) has rapidly evolved to increase the W-film surface polishing rate via Fenton-reaction acceleration and enhance nanoscale-abrasive (i.e., ZrO2) dispersant stability in the CMP slurry by adding a scavenger to suppress the Fenton reaction. To enhance the ZrO2 abrasive dispersant stability, a scavenger with protonate-phosphite ions was designed to suppress the time-dependent Fenton reaction. The ZrO2 abrasive dispersant stability (i.e., lower H2O2 decomposition rate and longer H2O2 pot lifetime) linearly and significantly increased with scavenger concentration. However, the corrosion magnitude on the W-film surface during CMP increased significantly with scavenger concentration. By adding a scavenger to the CMP slurry, the radical amount reduction via Fenton-reaction suppression in the CMP slurry and the corrosion enhancement on the W-film surface during CMP performed that the W-film surface polishing rate decreased linearly and notably with increasing scavenger concentration via a chemical-dominant CMP mechanism. Otherwise, the SiO2-film surface polishing rate peaked at a specific scavenger concentration via a chemical and mechanical-dominant CMP mechanism. The addition of a corrosion inhibitor with a protonate-amine functional group to the W-film surface CMP slurry completely suppressed the corrosion generation on the W-film surface during CMP without a decrease in the W- and SiO2-film surface polishing rate.

scholarly journals Fenton Reaction for Enhancing Polishing Rate and Protonated Amine Functional Group Polymer for Inhibiting Corrosion in Ge1Sb4Te5 Film Surface Chemical–Mechanical-Planarization

2021 ◽  
Vol 11 (22) ◽  
pp. 10872
Author(s):  
Gi-Ppeum Jeong ◽  
Young-Hye Son ◽  
Jun-Seong Park ◽  
Pil-Su Kim ◽  
Man-Hyup Han ◽  
...  
Keyword(s):  
Corrosion Inhibitor ◽  
Fenton Reaction ◽  
Chemical Mechanical Planarization ◽  
Three Dimensional ◽  
Random Access ◽  
Film Surface ◽  
Corrosion Current ◽  
Chemical Oxidation ◽  
Cross Point ◽  
Protonated Amine

A Fenton reaction and a corrosion inhibition strategy were designed for enhancing the polishing rate and achieving a corrosion-free Ge1Sb4Te5 film surface during chemical–mechanical planarization (CMP) of three-dimensional (3D) cross-point phase-change random-access memory (PCRAM) cells and 3D cross-point synaptic arrays. The Fenton reaction was conducted with 1,3-propylenediamine tetraacetic acid, ferric ammonium salt (PDTA–Fe) and H2O2. The chemical oxidation degree of GeO2, Sb2O3, and TeO2 evidently increased with the PDTA–Fe concentration in the CMP slurry, such that the polishing rate of the Ge1Sb4Te5 film surface linearly increased with the PDTA–Fe concentration. The addition of a corrosion inhibitor having protonated amine functional groups in the CMP slurry remarkably suppressed the corrosion degree of the Ge1Sb4Te5 film surface after CMP; i.e., the corrosion current of the Ge1Sb4Te5 film surface linearly decreased as the corrosion inhibitor concentration increased. Thus, the proposed Fenton reaction and corrosion inhibitor in the Ge1Sb4Te5 film surface CMP slurry could achieve an almost recess-free Ge1Sb4Te5 film surface of the confined-PCRAM cells, having an aspect ratio of 60-nm-height to 4-nm-diameter after CMP.

Effects of abrasive particle size and molecular weight of poly(acrylic acid) in ceria slurry on removal selectivity of SiO2/Si3N4 films in shallow trench isolation chemical mechanical planarization

2007 ◽  
Vol 22 (3) ◽  
pp. 777-787 ◽  
Author(s):  
Hyun-Goo Kang ◽  
Hyung-Soon Park ◽  
Ungyu Paik ◽  
Jea-Gun Park
Keyword(s):  
Molecular Weight ◽  
Surface Roughness ◽  
Acrylic Acid ◽  
Removal Rate ◽  
Chemical Mechanical Planarization ◽  
Abrasive Particle ◽  
Film Surface ◽  
Nitride Film ◽  
Patterned Wafers ◽  
Poly Acrylic Acid

The effects of the molecular weight and concentration of poly(acrylic acid) (PAA) with different primary abrasive sizes in ceria slurry on the nitride film loss, removal rate, film surface roughness, and removal selectivity of SiO2-to-Si3N4 films were investigated by performing chemical mechanical polishing (CMP) experiments using blanket and patterned wafers. In the case of the blanket wafers, we found that for a lower PAA molecular weight, the removal selectivity of SiO2-to-Si3N4 films increased more significantly with increasing PAA concentration in slurry containing a larger primary abrasive size. For the patterned wafers, with a higher PAA molecular weight in the ceria slurry suspension, the erosion of the Si3N4 film was less, but the removed amount was also smaller, and the surface roughness became worse after CMP. These results can be qualitatively explained by the layer of PAA adsorbed on the film surface, in terms of electrostatic interaction and rheological behavior.

Mechanism for Desorption of SiF4 from SiO2 Film Surface in HF Solutions

1996 ◽  
Author(s):  
Tomoki OKU ◽  
Kazuhiko SATO ◽  
Mutsuyuki OTSUBO
Keyword(s):  
Film Surface ◽  
Sio2 Film

Photon‐stimulated desorption study of a SiO2 film surface

1991 ◽  
Vol 9 (2) ◽  
pp. 212-216 ◽  
Author(s):  
M. Niwano ◽  
Y. Takakuwa ◽  
H. Katakura ◽  
N. Miyamoto
Keyword(s):  
Film Surface ◽  
Sio2 Film ◽  
Desorption Study

Detection of Surface Response to Chemical/Mechanical Planarization of Silica Films

1992 ◽  
Vol 260 ◽  
Author(s):  
Jeffrey A. Trogolo ◽  
Krishna Rajan
Keyword(s):  
Electron Microscopy ◽  
Silicon Dioxide ◽  
Structural Changes ◽  
Chemical Mechanical Planarization ◽  
Film Surface ◽  
Structural Effects ◽  
Silica Films ◽  
Transmission Electron ◽  
Device Processing ◽  
Planarization Process

ABSTRACTChemical/mechanical (C/M) planarization is a technique that has received attention lately due to the industry-wide trend toward multilevel device processing. In most multilevel schemes, the most commonly planarized layer is the interlevel dielectric, usually an oxide. In order to understand the response of this oxide layer to the planarization process, the authors have addressed the issues of chemical and structural effects of C/M planarization on silicon dioxide films. Transmission electron microscopy (TEM) and Fourier transformed infrared (FTIR) spectroscopy were used to examine the films and revealed that there are chemical and structural changes that occur within 200 nm of the film surface.

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