scholarly journals Miniaturized Continuous-Flow Digital PCR for Clinical-Level Serum Sample Based on the 3D Microfluidics and CMOS Imaging Device

Sensors ◽  
2020 ◽  
Vol 20 (9) ◽  
pp. 2492
Author(s):  
Bin Li ◽  
Yuanming Li ◽  
Andreas Manz ◽  
Wenming Wu
Keyword(s):  
Continuous Flow ◽  
Pcr Amplification ◽  
Complementary Metal Oxide Semiconductor ◽  
Digital Pcr ◽  
Oxide Semiconductor ◽  
Serum Samples ◽  
Imaging Device ◽  
Loop Area ◽  
Teflon Tube ◽  
3D Microfluidics

In recent years, the development of polymerase chain reaction (PCR) technology has focused on digital PCR, which depends on the microfluidics. Based on continuous-flow microfluidic technology, this paper designed a miniaturized digital PCR amplification system, and greatly reduced the area required for microdroplet generation and reaction. The core rod. made of polydimethylsiloxane (PDMS), was combined with the Teflon tube to form 3D microfluidics, which requires only one heating source to form the temperature difference required for gene amplification. Only two 34 g needles can form and transmit micro-droplets in a 4-fold tapered Teflon tube, which is the simplest method to generate digital PCR droplets as far as we know, which allows the microdroplet generation device to be free from dependence on expensive chips. A complementary metal oxide semiconductor (CMOS) camera was used as a detection tool to obtain fluorescence video for the entire loop area or a specified loop area. In addition, we developed a homebrew for automatic image acquisition and processing to realize the function of digital PCR. This technique realizes the analysis of clinical serum samples of hepatitis B virus (HBV) and obtained the same results as real-time quantitative PCR. This system has greatly reduced the size and cost of the entire system, while maintaining a stable response.

scholarly journals In situ Observations of Porcine Ocular Surface Cells with Handheld 2K-pixel Microscope

2020 ◽  
Vol 14 (1) ◽  
pp. 66-69
Author(s):  
Tatsuya Mimura ◽  
Atsushi Mizota ◽  
Toshihiro Hayashi ◽  
Satoshi Nishimura
Keyword(s):  
Epithelial Cells ◽  
Ocular Surface ◽  
Imaging System ◽  
Single Cells ◽  
Numerical Aperture ◽  
Complementary Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Objective Lens ◽  
Imaging Device

Introduction: To present our findings of the porcine ocular surface that were obtained with an ultra-compact hand-held microscope that weighs less than 500 g, we examined the corneal epithelial cells with this hand-held microscope. Methods: This device is equipped with an automatic focusing mechanism that enabled us to observe living cells in macro to micro magnifications with a series of operations. The focus is semi-automatically adjusted by the infrared and ultrasonic distance sensor. The instrument has a commercially-available microscope objective lens of 20x or 40x magnification and has a high-resolution 2K Complementary Metal-Oxide-Semiconductor (CMOS) camera. The theoretical spatial resolution is around 300 nm with a higher Numerical Aperture (high-NA) lenses. The widefield reflectance-based imaging system is equipped with three-color visible Light-Emitting Diodes (LEDs) for use in bright environments and an infrared LED for dark environments. Ten normal and two injured porcine corneas were examined with this hand-held microscope. Results: Our observations showed that the corneal and conjunctival epithelial cells could be continuously observed. The epithelial cells of the central cornea, limbus, and conjunctiva were clearly seen. The epithelial cells on the injured corneal surface were also easily and clearly observed. Conclusion: This hand-held microscopic imaging device allows medical health care workers such as ophthalmologists and endoscopists to obtain real-time in vivo optical biopsies without collecting tissues and cells. Our system enables us to observe single cells in the superficial layers without any fluorescein or other dyes.

scholarly journals An E-Band 21-dB Variable-Gain Amplifier with 0.5-V Supply in 40-nm CMOS

Electronics ◽  
2021 ◽  
Vol 10 (7) ◽  
pp. 804
Author(s):  
Gibeom Shin ◽  
Kyunghwan Kim ◽  
Kangseop Lee ◽  
Hyun-Hak Jeong ◽  
Ho-Jin Song
Keyword(s):  
Power Consumption ◽  
Frequency Band ◽  
Noise Figure ◽  
Complementary Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Operating Frequency ◽  
Variable Gain Amplifier ◽  
Variable Gain ◽  
Operating Frequency Band ◽  
Shunt Capacitors

This paper presents a variable-gain amplifier (VGA) in the 68–78 GHz range. To reduce DC power consumption, the drain voltage was set to 0.5 V with competitive performance in the gain and the noise figure. High-Q shunt capacitors were employed at the gate terminal of the core transistors to move input matching points for easy matching with a compact transformer. The four stages amplifier fabricated in 40-nm bulk complementary metal oxide semiconductor (CMOS) showed a peak gain of 24.5 dB at 71.3 GHz and 3‑dB bandwidth of more than 10 GHz in 68–78 GHz range with approximately 4.8-mW power consumption per stage. Gate-bias control of the second stage in which feedback capacitances were neutralized with cross-coupled capacitors allowed us to vary the gain by around 21 dB in the operating frequency band. The noise figure was estimated to be better than 5.9 dB in the operating frequency band from the full electromagnetic (EM) simulation.

scholarly journals Ab initio perspective of ultra-scaled CMOS from 2D-material fundamentals to dynamically doped transistors

2021 ◽  
Vol 5 (1) ◽  
Author(s):  
Aryan Afzalian
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
High Mobility ◽  
Complementary Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Grand Challenge ◽  
Gate Length ◽  
Delay Performance ◽  
Effect Transistor

AbstractUsing accurate dissipative DFT-NEGF atomistic-simulation techniques within the Wannier-Function formalism, we give a fresh look at the possibility of sub-10-nm scaling for high-performance complementary metal oxide semiconductor (CMOS) applications. We show that a combination of good electrostatic control together with high mobility is paramount to meet the stringent roadmap targets. Such requirements typically play against each other at sub-10-nm gate length for MOS transistors made of conventional semiconductor materials like Si, Ge, or III–V and dimensional scaling is expected to end ~12 nm gate-length (pitch of 40 nm). We demonstrate that using alternative 2D channel materials, such as the less-explored HfS2 or ZrS2, high-drive current down to ~6 nm is, however, achievable. We also propose a dynamically doped field-effect transistor concept, that scales better than its MOSFET counterpart. Used in combination with a high-mobility material such as HfS2, it allows for keeping the stringent high-performance CMOS on current and competitive energy-delay performance, when scaling down to virtually 0 nm gate length using a single-gate architecture and an ultra-compact design (pitch of 22 nm). The dynamically doped field-effect transistor further addresses the grand-challenge of doping in ultra-scaled devices and 2D materials in particular.

scholarly journals Complete Ring Artifacts Reduction Procedure for Lab-Based X-ray Nano CT Systems

Sensors ◽  
2021 ◽  
Vol 21 (1) ◽  
pp. 238
Author(s):  
Jakub Šalplachta ◽  
Tomáš Zikmund ◽  
Marek Zemek ◽  
Adam Břínek ◽  
Yoshihiro Takeda ◽  
...  
Keyword(s):  
High Efficiency ◽  
Image Inpainting ◽  
Simulated Data ◽  
Complementary Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Detection Accuracy ◽  
Reduction Procedure ◽  
X Ray ◽  
Artifacts Reduction ◽  
Ct Data

In this article, we introduce a new ring artifacts reduction procedure that combines several ideas from existing methods into one complex and robust approach with a goal to overcome their individual weaknesses and limitations. The procedure differentiates two types of ring artifacts according to their cause and character in computed tomography (CT) data. Each type is then addressed separately in the sinogram domain. The novel iterative schemes based on relative total variations (RTV) were integrated to detect the artifacts. The correction process uses the image inpainting, and the intensity deviations smoothing method. The procedure was implemented in scope of lab-based X-ray nano CT with detection systems based on charge-coupled device (CCD) and scientific complementary metal–oxide–semiconductor (sCMOS) technologies. The procedure was then further tested and optimized on the simulated data and the real CT data of selected samples with different compositions. The performance of the procedure was quantitatively evaluated in terms of the artifacts’ detection accuracy, the comparison with existing methods, and the ability to preserve spatial resolution. The results show a high efficiency of ring removal and the preservation of the original sample’s structure.

Computational study of the staircase molecular conductivity of polyoxovanadates adsorbed on Au(111)

2021 ◽  
Vol 50 (16) ◽  
pp. 5540-5551
Author(s):  
Almudena Notario-Estévez ◽  
Xavier López ◽  
Coen de Graaf
Keyword(s):  
Metal Oxide ◽  
Computational Study ◽  
Complementary Metal Oxide Semiconductor ◽  
Cmos Technology ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Molecular Conduction ◽  
Conduction Properties ◽  
Molecular Conductivity

This computational study presents the molecular conduction properties of polyoxovanadates V6O19 (Lindqvist-type) and V18O42, as possible successors of the materials currently in use in complementary metal–oxide semiconductor (CMOS) technology.

scholarly journals Phase Change Metasurfaces by Continuous or Quasi-Continuous Atoms for Active Optoelectronic Integration

Materials ◽  
2021 ◽  
Vol 14 (5) ◽  
pp. 1272
Author(s):  
Zhihua Fan ◽  
Qinling Deng ◽  
Xiaoyu Ma ◽  
Shaolin Zhou
Keyword(s):  
Phase Change ◽  
Phase Change Materials ◽  
Complementary Metal Oxide Semiconductor ◽  
Photonic Devices ◽  
Oxide Semiconductor ◽  
Cmos Process ◽  
Nanophotonic Devices ◽  
Optoelectronic Integration ◽  
Hybrid Devices ◽  
Micro Electromechanical System

In recent decades, metasurfaces have emerged as an exotic and appealing group of nanophotonic devices for versatile wave regulation with deep subwavelength thickness facilitating compact integration. However, the ability to dynamically control the wave–matter interaction with external stimulus is highly desirable especially in such scenarios as integrated photonics and optoelectronics, since their performance in amplitude and phase control settle down once manufactured. Currently, available routes to construct active photonic devices include micro-electromechanical system (MEMS), semiconductors, liquid crystal, and phase change materials (PCMs)-integrated hybrid devices, etc. For the sake of compact integration and good compatibility with the mainstream complementary metal oxide semiconductor (CMOS) process for nanofabrication and device integration, the PCMs-based scheme stands out as a viable and promising candidate. Therefore, this review focuses on recent progresses on phase change metasurfaces with dynamic wave control (amplitude and phase or wavefront), and especially outlines those with continuous or quasi-continuous atoms in favor of optoelectronic integration.

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