scholarly journals Transient Electrical and Optical Characteristics of Electron and Proton Irradiated SiGe Detectors

Sensors ◽  
2020 ◽  
Vol 20 (23) ◽  
pp. 6884
Author(s):  
Tomas Ceponis ◽  
Laimonas Deveikis ◽  
Stanislau Lastovskii ◽  
Leonid Makarenko ◽  
Jevgenij Pavlov ◽  
...  
Keyword(s):  
Steady State ◽  
Optical Characteristics ◽  
Particle Detector ◽  
Carrier Capture ◽  
Recombination Lifetime ◽  
Carrier Trapping ◽  
Carrier Recombination ◽  
Barrier Capacitance ◽  
Carrier Trap ◽  
Photo Ionization

The particle detector degradation mainly appears through decrease of carrier recombination lifetime and manifestation of carrier trapping effects related to introduction of carrier capture and emission centers. In this work, the carrier trap spectroscopy in Si1−xGex structures, containing either 1 or 5% of Ge, has been performed by combining the microwave probed photoconductivity, pulsed barrier capacitance transients and spectra of steady-state photo-ionization. These characteristics were examined in pristine, 5.5 MeV electron and 1.6 MeV proton irradiated Si and SiGe diodes with n+p structure.

Correlation of Fe-Rich Defect Centre and Minority Carrier Lifetime in p-Type Multicrystalline Silicon

2013 ◽  
Vol 440 ◽  
pp. 82-87 ◽  
Author(s):  
Mohammad Jahangir Alam ◽  
Mohammad Ziaur Rahman
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Multicrystalline Silicon ◽  
Recombination Lifetime ◽  
Spatially Resolved ◽  
Carrier Recombination ◽  
Negative Role ◽  
P Type ◽  
The Impact

A comparative study has been made to analyze the impact of interstitial iron in minority carrier lifetime of multicrystalline silicon (mc-Si). It is shown that iron plays a negative role and is considered very detrimental for minority carrier recombination lifetime. The analytical results of this study are aligned with the spatially resolved imaging analysis of iron rich mc-Si.

Ultrafast Relaxation Character of Nonequilibrium Carriers in GaAs Excited by Femtosecond Laser

2006 ◽  
Vol 532-533 ◽  
pp. 572-575
Author(s):  
Ming Zhou ◽  
Dong Qing Yuan ◽  
Li Peng Liu ◽  
Hui Xia Liu ◽  
Nai Fei Ren
Keyword(s):  
Femtosecond Laser ◽  
Relaxation Curve ◽  
Refraction Index ◽  
Free Carrier ◽  
Index Of Refraction ◽  
Lattice Temperature ◽  
Pump Probe ◽  
Recombination Lifetime ◽  
Carrier Effect ◽  
Carrier Recombination

Experiment setup of femtosecond laser pump probe was established, the time resolution of time-delay setting reached 67fs. By use of femtosecond laser with width of 30fs and wavelength is 796nm the dependence of transient change of reflectivity on delayed time in GaAs was measured by pump-probe method. By calculating the change of complex index of refraction (%n), free-carrier effect, lattice-temperature and carrier recombination contributions to relaxation curve was analyzed. When the carrier density N is 1.44×1018/cm3, free-carrier contribution to refraction index %nFC is -7.33×10-4, lattice-temperature %nLT is 0.85×10-4. Based on recombination rate equation, recombination lifetime of 980ps was deduced.

scholarly journals Stabilizing halide perovskite surfaces for solar cell operation with wide-bandgap lead oxysalts

Science ◽  
2019 ◽  
Vol 365 (6452) ◽  
pp. 473-478 ◽  
Author(s):  
Shuang Yang ◽  
Shangshang Chen ◽  
Edoardo Mosconi ◽  
Yanjun Fang ◽  
Xun Xiao ◽  
...  
Keyword(s):  
Defect Density ◽  
Bulk Material ◽  
Wide Bandgap ◽  
Thin Layers ◽  
Maximum Power Point ◽  
Recombination Lifetime ◽  
Phosphate Ions ◽  
Carrier Recombination ◽  
Halide Perovskite ◽  
Power Point

We show that converting the surfaces of lead halide perovskite to water-insoluble lead (II) oxysalt through reaction with sulfate or phosphate ions can effectively stabilize the perovskite surface and bulk material. These capping lead oxysalt thin layers enhance the water resistance of the perovskite films by forming strong chemical bonds. The wide-bandgap lead oxysalt layers also reduce the defect density on the perovskite surfaces by passivating undercoordinated surface lead centers, which are defect-nucleating sites. Formation of the lead oxysalt layer increases the carrier recombination lifetime and boosts the efficiency of the solar cells to 21.1%. Encapsulated devices stabilized by the lead oxysalt layers maintain 96.8% of their initial efficiency after operation at maximum power point under simulated air mass (AM) 1.5 G irradiation for 1200 hours at 65°C.

scholarly journals Carrier recombination lifetime in InAs thin films bonded on low-k flexible substrates

AIP Advances ◽  
2012 ◽  
Vol 2 (4) ◽  
pp. 042105 ◽  
Author(s):  
Toshi-kazu Suzuki ◽  
Hayato Takita ◽  
Cong Thanh Nguyen ◽  
Koichi Iiyama
Keyword(s):  
Thin Films ◽  
Flexible Substrates ◽  
Recombination Lifetime ◽  
Carrier Recombination ◽  
Inas Thin Films ◽  
Low K

Ambipolar Diffusion Coefficients in a-SiC:H Alloys in Steady- State and Transient Grating Measurements

1993 ◽  
Vol 297 ◽  
Author(s):  
H. Weinert ◽  
M. Petrauskas ◽  
J. Kolenda ◽  
A. Galeckas ◽  
F. Wang ◽  
...  
Keyword(s):  
Steady State ◽  
Diffusion Coefficients ◽  
Ambipolar Diffusion ◽  
Einstein Relation ◽  
Transient Grating ◽  
Steady State Condition ◽  
Carrier Recombination ◽  
High Carrier ◽  
D Values ◽  
Silicon Based

Recently we have determined surprisingly large values of the ambipolar diffusion coefficient D of 3 − 9 cm2/s in amorphous silicon-based alloys and a-Si:H/a-SiC:H multilayer structures from transient grating decays in the psec time domain. The steady-state photocarrier grating method, however, resulted in much lower D values (∼10−4 cm2/s) in the same samples. Since high carrier densities of typically 1019 cm−3 are reached in the psec domain, the Einstein relation may no longer be valid. The large diffusivity of non-equilibrium carriers decreases, however, rapidly in time due to energy relaxation and carrier recombination until a stable trap occupation under steady-state condition is reached.

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