scholarly journals High Harmonic Generation in Monolayer and Bilayer of Transition Metal Dichalcogenide

Symmetry ◽  
2021 ◽  
Vol 13 (12) ◽  
pp. 2403
Author(s):  
Yeon Lee ◽  
Dasol Kim ◽  
Dong-Eon Kim ◽  
Alexis Chacón
Keyword(s):  
Transition Metal ◽  
Harmonic Generation ◽  
Degrees Of Freedom ◽  
Magnetic Moments ◽  
Transition Metal Dichalcogenides ◽  
High Harmonic ◽  
High Energy ◽  
Transition Matrix Element ◽  
Transition Metal Dichalcogenide ◽  
Berry Curvature

In transition metal dichalcogenides (TMDCs), charge carriers have spin, pseudospin, and valley degrees of freedom associated with magnetic moments. The monolayers and bilayers of the TMDCs, in particular, MoS2, lead to strong couplings between the spin and pseudospin effects. This feature has drawn attention to TMDCs for their potential use in advanced tech devices. Meanwhile, high-order harmonic generation (HHG) has recently been applied to the characterization of the electronic structure of solids, such as energy dispersion, Berry-curvature, and topological properties. Here, we show theoretical results obtained with the ‘philosophy’ of using HHG to investigate the structural effects of the monolayer and bilayers of MoS2 on nonlinear optical emission. We use a simple model for MoS2 in the 3R AB staking. We find that the pseudospin and valley indexes (the Berry curvature and the dipole transition matrix element) in TMDC driven by a circularly polarized laser (CPL) can encode in the high-energy photon emissions. This theoretical investigation is expected to pave the way for the ultrafast manipulation of valleytronics and lead to new questions concerning the spin-obit-coupling (SOC) effects on TMDC materials, Weyl Semimetals, and topological phases and transitions in topological insulators.

scholarly journals Second-harmonic generation enhancement in monolayer transition-metal dichalcogenides by using an epsilon-near-zero substrate

2021 ◽  
Vol 3 (1) ◽  
pp. 272-278
Author(s):  
Pilar G. Vianna ◽  
Aline dos S. Almeida ◽  
Rodrigo M. Gerosa ◽  
Dario A. Bahamon ◽  
Christiano J. S. de Matos
Keyword(s):  
Dielectric Constant ◽  
Transition Metal ◽  
Harmonic Generation ◽  
Nonlinear Effect ◽  
Second Harmonic ◽  
2D Materials ◽  
Transition Metal Dichalcogenides ◽  
Transition Metal Dichalcogenide ◽  
Metal Dichalcogenides ◽  
Epsilon Near Zero

The scheme illustrates a monolayer transition-metal dichalcogenide on an epsilon-near-zero substrate. The substrate near-zero dielectric constant is used as the enhancement mechanism to maximize the SHG nonlinear effect on monolayer 2D materials.

scholarly journals Tunable topology and berry curvature dipole in transition metal dichalcogenide Janus monolayers

2021 ◽  
Author(s):  
Nesta Joseph ◽  
Saswata Roy ◽  
Awadhesh Narayan
Keyword(s):  
Transition Metal ◽  
Hall Effect ◽  
Transition Metal Dichalcogenides ◽  
Tight Binding ◽  
Quantum Spin ◽  
Transition Metal Dichalcogenide ◽  
Berry Curvature ◽  
Asymmetric Structures ◽  
Non Linear ◽  
Metal Dichalcogenides

Abstract Janus transition metal dichalcogenides, with intrinsic mirror asymmetry, exhibit a wide array of interesting properties. In this work, we study Janus monolayers derived from WTe2 using first-principles and tight-binding calculations. We discover that WSeTe and WSTe are topologically trivial, in contrast to the parent quantum spin Hall insulator WTe2. Motivated by the growing interest in non-linear Hall effect, which also requires asymmetric structures, we investigate the Berry curvature and its dipole in these Janus systems and find that they exhibit strikingly large values of Berry curvature dipole, despite being in the topologically trivial phase. We track down the origin of this behaviour and put forth a low-energy massive Dirac model to understand the central features of our ab inito computations. Our predictions introduce Janus monolayers as promising new platforms for exploring as well as engineering non-linear Hall effect.

scholarly journals Polarization Flipping of Even-Order Harmonics in Monolayer Transition-Metal Dichalcogenides

2021 ◽  
Vol 2021 ◽  
pp. 1-9
Author(s):  
Yuki Kobayashi ◽  
Christian Heide ◽  
Hamed Koochaki Kelardeh ◽  
Amalya Johnson ◽  
Fang Liu ◽  
...  
Keyword(s):  
Transition Metal ◽  
Laser Field ◽  
Crystal Orientation ◽  
Transition Metal Dichalcogenides ◽  
High Harmonic ◽  
High Energy ◽  
Mirror Plane ◽  
Odd Order ◽  
Metal Dichalcogenides ◽  
Even Order

We present a systematic study of the crystal-orientation dependence of high-harmonic generation in monolayer transition-metal dichalcogenides, WS2 and MoSe2, subjected to intense linearly polarized midinfrared laser fields. The measured spectra consist of both odd- and even-order harmonics, with a high-energy cutoff extending beyond the 15th order for a laser-field strength around ~1 V/nm. In WS2, we find that the polarization direction of the odd-order harmonics smoothly follows that of the laser field irrespective of the crystal orientation, whereas the direction of the even-order harmonics is fixed by the crystal mirror planes. Furthermore, the polarization of the even-order harmonics shows a flip in the course of crystal rotation when the laser field lies between two of the crystal mirror planes. By numerically solving the semiconductor Bloch equations for a gapped-graphene model, we qualitatively reproduce these experimental features and find the polarization flipping to be associated with a significant contribution from interband polarization. In contrast, high-harmonic signals from MoSe2 exhibit deviations from the laser-field following of odd-order harmonics and crystal-mirror-plane following of even-order harmonics. We attribute these differences to the competing roles of the intraband and interband contributions, including the deflection of the electron-hole trajectories by nonparabolic crystal bands.

scholarly journals Reactive plasma cleaning and restoration of transition metal dichalcogenide monolayers

2021 ◽  
Vol 5 (1) ◽  
Author(s):  
Daniil Marinov ◽  
Jean-François de Marneffe ◽  
Quentin Smets ◽  
Goutham Arutchelvan ◽  
Kristof M. Bal ◽  
...  
Keyword(s):  
High Temperature ◽  
Transition Metal ◽  
Field Effect Transistors ◽  
Removal Rate ◽  
2D Materials ◽  
Scale Up ◽  
Transition Metal Dichalcogenides ◽  
Chemical Properties ◽  
Plasma Cleaning ◽  
Transition Metal Dichalcogenide

AbstractThe cleaning of two-dimensional (2D) materials is an essential step in the fabrication of future devices, leveraging their unique physical, optical, and chemical properties. Part of these emerging 2D materials are transition metal dichalcogenides (TMDs). So far there is limited understanding of the cleaning of “monolayer” TMD materials. In this study, we report on the use of downstream H2 plasma to clean the surface of monolayer WS2 grown by MOCVD. We demonstrate that high-temperature processing is essential, allowing to maximize the removal rate of polymers and to mitigate damage caused to the WS2 in the form of sulfur vacancies. We show that low temperature in situ carbonyl sulfide (OCS) soak is an efficient way to resulfurize the material, besides high-temperature H2S annealing. The cleaning processes and mechanisms elucidated in this work are tested on back-gated field-effect transistors, confirming that transport properties of WS2 devices can be maintained by the combination of H2 plasma cleaning and OCS restoration. The low-damage plasma cleaning based on H2 and OCS is very reproducible, fast (completed in a few minutes) and uses a 300 mm industrial plasma etch system qualified for standard semiconductor pilot production. This process is, therefore, expected to enable the industrial scale-up of 2D-based devices, co-integrated with silicon technology.

Size-dependent phase stability in transition metal dichalcogenide nanoparticles controlled by metal substrates

Nanoscale ◽  
2021 ◽  
Author(s):  
Albert Bruix ◽  
Jeppe Vang Lauritsen ◽  
Bjork Hammer
Keyword(s):  
Transition Metal ◽  
Hydrogen Evolution ◽  
Hydrogen Evolution Reaction ◽  
Phase Stability ◽  
Transition Metal Dichalcogenides ◽  
Transition Metal Dichalcogenide ◽  
Metal Substrates ◽  
Size Dependent ◽  
Metal Dichalcogenides

Nanomaterials based on MoS2 and related transition metal dichalcogenides are remarkably versatile; MoS2 nanoparticles are proven catalysts for processes such as hydrodesulphurization and the hydrogen evolution reaction, and transition metal...

scholarly journals Exciton g-factors in monolayer and bilayer WSe2 from experiment and theory

2020 ◽  
Vol 11 (1) ◽  
Author(s):  
Jonathan Förste ◽  
Nikita V. Tepliakov ◽  
Stanislav Yu. Kruchinin ◽  
Jessica Lindlau ◽  
Victor Funk ◽  
...  
Keyword(s):  
Transition Metal ◽  
Transition Metal Dichalcogenides ◽  
Transition Metal Dichalcogenide ◽  
Layer Transition ◽  
General Terms ◽  
Indirect Excitons ◽  
Metal Dichalcogenides ◽  
Experimental Findings ◽  
Experimental And Theoretical Studies

Abstract The optical properties of monolayer and bilayer transition metal dichalcogenide semiconductors are governed by excitons in different spin and valley configurations, providing versatile aspects for van der Waals heterostructures and devices. Here, we present experimental and theoretical studies of exciton energy splittings in external magnetic field in neutral and charged WSe2 monolayer and bilayer crystals embedded in a field effect device for active doping control. We develop theoretical methods to calculate the exciton g-factors from first principles for all possible spin-valley configurations of excitons in monolayer and bilayer WSe2 including valley-indirect excitons. Our theoretical and experimental findings shed light on some of the characteristic photoluminescence peaks observed for monolayer and bilayer WSe2. In more general terms, the theoretical aspects of our work provide additional means for the characterization of single and few-layer transition metal dichalcogenides, as well as their heterostructures, in the presence of external magnetic fields.

scholarly journals Exfoliated transition metal dichalcogenide nanosheets for supercapacitor and sodium ion battery applications

2019 ◽  
Vol 6 (8) ◽  
pp. 190437 ◽  
Author(s):  
Santanu Mukherjee ◽  
Jonathan Turnley ◽  
Elisabeth Mansfield ◽  
Jason Holm ◽  
Davi Soares ◽  
...  
Keyword(s):  
Transition Metal ◽  
Metal Ion ◽  
Coulombic Efficiency ◽  
Transition Metal Dichalcogenides ◽  
Sodium Ion ◽  
Transition Metal Dichalcogenide ◽  
Composite Electrodes ◽  
Metal Dichalcogenides ◽  
Storage Technologies ◽  
Supercapacitor Applications

Growing concerns regarding the safety, flammability and hazards posed by Li-ion systems have led to research on alternative rechargeable metal-ion electrochemical storage technologies. Among the most notable of these are Na-ion supercapacitors and batteries, motivated, in part, by the similar electrochemistry of Li and Na ions. However, sodium ion batteries (SIBs) come with their own set of issues, especially the large size of the Na + ion, its relatively sluggish kinetics and low energy densities. This makes the development of novel materials and appropriate electrode architecture of absolute significance. Transition metal dichalcogenides (TMDs) have attracted a lot of attention in this regard due to their relative ease of exfoliation, diverse morphologies and architectures with superior electronic properties. Here, we study the electrochemical performance of Mo-based two-dimensional (2D) layered TMDs (e.g. MoS 2 , MoSe 2 and MoTe 2 ), exfoliated in a superacid, for battery and supercapacitor applications. The exfoliated TMD flakes were interfaced with reduced graphene oxide (rGO) to be used as composite electrodes. Electron microscopy, elemental mapping and Raman spectra were used to analyse the exfoliated material and confirm the formation of 2D TMD/rGO layer morphology. For supercapacitor applications in aqueous electrolyte, the sulfide-based TMD (MoS 2 ) exhibited the best performance, providing an areal capacitance of 60.25 mF cm −2 . For SIB applications, TMD electrodes exhibited significantly higher charge capacities than the neat rGO electrode. The initial desodiation capacities for the composite electrodes are 468.84 mAh g −1 (1687.82 C g −1 ), 399.10 mAh g −1 (1436.76 C g −1 ) and 387.36 mAh g −1 (1394.49 C g −1 ) for MoS 2 , MoSe 2 and MoTe 2 , respectively. Also, the MoS 2 and MoSe 2 composite electrodes provided a coulombic efficiency of near 100 % after a few initial cycles.

Sign in / Sign up

Export Citation Format

Share Document