scholarly journals Fabrication, Structural, Optical, Electrical Properties and Influence of Complexing Agents on Ternary CuZnS2 Thin Film

2021 ◽  
Vol 33 (11) ◽  
pp. 2762-2766
Author(s):  
E. Anuja ◽  
R. Thiruneelakandan
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Glass Plate ◽  
Zinc Sulphide ◽  
Complexing Agents ◽  
Absorption Studies ◽  
Type Semiconductor ◽  
Hall Effect Measurements ◽  
Copper Zinc ◽  
P Type

In the present work, copper zinc sulphide (CuZnS2) thin films with and without complexing agents using glass plate as substrate were prepared. Chemical bath deposition method was employed to deposit the thin films. Powder X-ray diffraction (PXRD) patterns of the prepared films indicate the crystalline nature of CuZnS2 with cubic phases. The SEM and AFM images illustrate that the deposited films were highly influenced on the polyhedral morphology by the complexing agents. The influence of complexing agents on absorbance and band gap of the CuZnS2 thin films were characterized using UV-Vis absorption studies. Hall effect measurements indicate the CuZnS2 thin film without surfactant belongs to p-type semiconductor and become n-type after adding the complexing agents EDTA and Leishman stain. From the I-V curve, all the samples having slow conducting nature was found for changing the voltage with the current from -32 nA to +30 nA using solar stimulator.

One-step electrodeposition of CuInxGa1−xSe2 thin films from a mixture system of ionic liquid and ethanol

2015 ◽  
Vol 39 (10) ◽  
pp. 7742-7745 ◽  
Author(s):  
Ye Lian ◽  
Shanshan Ji ◽  
Lei Zhao ◽  
Jie Zhang ◽  
Peixia Yang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Ionic Liquid ◽  
Band Gap ◽  
High Crystalline Quality ◽  
Cigs Thin Film ◽  
Type Semiconductor ◽  
One Step ◽  
P Type ◽  
Mixture System

Synthesizing high crystalline quality p-type semiconductor CIGS thin film with a band gap of 1.41 eV by galvanostatic electrodeposition.

scholarly journals Growth of CZTS Thin Films by Cosputtering of Metal Targets and Sulfurization in H2S

2013 ◽  
Vol 2013 ◽  
pp. 1-7 ◽  
Author(s):  
N. Muhunthan ◽  
Om Pal Singh ◽  
Son Singh ◽  
V. N. Singh
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Tin Sulfide ◽  
Copper Zinc Tin Sulfide ◽  
Optical Absorbance ◽  
Study Results ◽  
Hall Effect Measurements ◽  
Copper Zinc ◽  
Raman Study ◽  
Czts Thin Films

Copper zinc tin sulfide (CZTS) is an emerging thin film photovoltaic material. Chemical composition and phase purity are important factors which decide the quality of the film for photovoltaic applications. In the present work, we report the results of the morphological, structural, optical, and electrical characterizations of Cu2ZnSnS4thin films, synthesized by sulfurizing magnetron cosputtered Cu2ZnSn thin films in ambient H2S. To the best of our knowledge, this is the first report on CZT deposition by cosputtering from Cu, Zn, and Sn targets and sulfurizing it in ambient H2S for making CZTS thin films. GIXRD and Raman study results showed that the film was kesterite CZTS. Optical absorbance studies revealed a band gap value of ~1.5 eV for CZTS thin film. Results of the Hall effect measurements are also reported.

Thermodynamics and Microstructure Development in the Thin Film Reaction of Aluminum on Silicon Carbide

1995 ◽  
Vol 403 ◽  
Author(s):  
T. S. Hayes ◽  
F. T. Ray ◽  
K. P. Trumble ◽  
E. P. Kvam
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Silicon Carbide ◽  
Ohmic Contacts ◽  
Microstructure Development ◽  
P Type ◽  
Microstructural Studies

AbstractA refined thernodynamic analysis of the reaction between molen Al and SiC is presented. The calculations indicate much higher Si concentrations for saturation with respect to AkC 3 formation than previously reported. Preliminary microstructural studies confirm the formation of interfacial A14C3 for pure Al thin films on SiC reacted at 9000C. The implications of the calculations and experimental observations for the production of ohmic contacts to p-type SiC are discussed.

scholarly journals p-Channel and n-Channel Thin-Film-Transistor Operation on Sprayed ZnO Nanoparticle Layers

2016 ◽  
Vol 2016 ◽  
pp. 1-6 ◽  
Author(s):  
Daiki Itohara ◽  
Kazato Shinohara ◽  
Toshiyuki Yoshida ◽  
Yasuhisa Fujita
Keyword(s):  
Thin Film ◽  
Arc Discharge ◽  
Thin Film Transistor ◽  
Chamber Pressure ◽  
Zno Nanoparticle ◽  
Zno Nps ◽  
Lower Chamber ◽  
Hall Effect Measurements ◽  
Particle Process ◽  
P Type

Both n-channel and p-channel thin-film transistors have been realized on ZnO nanoparticle (NP) layers sprayed onto quartz substrates. In this study, nitrogen-doped ZnO-NPs were synthesized using an arc-discharge-mediated gas-evaporation method that was recently developed. Sprayed NP layers were characterized by scanning electron microscopy and Hall effect measurements. It was confirmed that p-type behaving NP layers can be obtained using ZnO-NPs synthesized with lower chamber pressure, whereas n-type conductivity can be obtained with higher chamber pressure. pn-junction diodes were also tested, resulting in clear rectifying characteristics. The possibility of particle-process-based ZnO-NP electronics was confirmed.

scholarly journals Preparation of Glass Plate-Supported Nanostructure ZnO Thin Film Deposited by Sol-Gel Spin-Coating Technique and Its Photocatalytic Degradation to Monoazo Textile Dye

2008 ◽  
Vol 2008 ◽  
pp. 1-5 ◽  
Author(s):  
Mohammad Hossein Habibi ◽  
Mohammad Khaledi Sardashti
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Photocatalytic Degradation ◽  
Spin Coating ◽  
Sol Gel ◽  
Glass Plate ◽  
Zno Thin Films ◽  
Visible Range ◽  
Textile Dye ◽  
Axis Orientation

Glass plate-supported nanostructure ZnO thin films were deposited by sol-gel spin coating. Films were preheated at275∘Cfor 10 minutes and annealed at 350, 450, and550∘Cfor 80 minutes. The ZnO thin films were transparent ca 80–90% in visible range and revealed that absorption edges at about 370 nm. Thec-axis orientation improves and the grain size increases which was indicated by an increase in intensity of the (002) peak at34.4∘in XRD corresponding to the hexagonal ZnO crystal. The photocatalytic degradation of X6G an anionic monoazo dye, in aqueous solutions, was investigated and the effects of some operational parameters such as the number of layer and reusability of ZnO nanostructure thin film were examined. The results showed that the five-layer coated glass surfaces have a very high photocatalytic performance.

Solution-processed ternary p-type CuCrO2 semiconductor thin films and their application in transistors

2018 ◽  
Vol 6 (6) ◽  
pp. 1393-1398 ◽  
Author(s):  
Shengbin Nie ◽  
Ao Liu ◽  
You Meng ◽  
Byoungchul Shin ◽  
Guoxia Liu ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Spin Coating ◽  
Thin Film Transistors ◽  
Solution Processed ◽  
Semiconductor Thin Films ◽  
P Type

In this study, transparent p-type CuCrxOy semiconductor thin films were fabricated using spin coating and integrated as channel layers in thin-film transistors (TFTs).

Photoassisted Electrodeposition of Cuprous Oxide Thin Films

2021 ◽  
Vol 105 (1) ◽  
pp. 441-452
Author(s):  
Katharina Mairhofer ◽  
Bettina Kipper-Pires ◽  
Gerhard Leitner ◽  
Guenter Fafilek
Keyword(s):  
Thin Films ◽  
Cuprous Oxide ◽  
Sem Analysis ◽  
Sufficient Energy ◽  
Tenfold Increase ◽  
Absorption Of Light ◽  
Additional Illumination ◽  
Type Semiconductor ◽  
P Type ◽  
Deposited Films

Well-defined cuprous oxide (Cu2O) thin films can be electrodeposited from an electrolyte containing copper (II) sulfate, lactic acid and sodium hydroxide. As Cu2O is a p-type semiconductor, it is possible to accelerate the process through illumination with light of sufficient energy (>2.1eV). Cyclic voltammetry and transient potentiostatic measurements were performed in a three-electrode setup with copper metalized wafers as a working electrode. Illumination was performed through the electrolyte, therefore absorption of light by the electrolyte had to be taken into consideration. Potentiostatic measurements with a blue LED as a light source have shown an tenfold increase in layer thickness in comparison to depositions without additional illumination. The deposited films were investigated with SEM analysis.

Fabrication of a Peltier Device Based on InSb and SbTe Thin Films

2011 ◽  
Vol 254 ◽  
pp. 50-53 ◽  
Author(s):  
Tatsuya Ishii ◽  
Hideyuki Homma ◽  
Shigeo Yamaguchi
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electron Beam ◽  
Vapor Phase ◽  
Electron Beam Evaporation ◽  
Peltier Effect ◽  
Insb Thin Films ◽  
Peltier Device ◽  
P Type ◽  
Direct Current Sputtering

We fabricated a thin film Peltier device based on an InSb film and a SbTe film. N-type InSb thin films were grown on sapphire (0001) substrate with InAsSb buffer layer by metalorganic vapor phase epitaxy, and P-type SbTe thin films were deposited on the substrate by electron beam evaporation. N-type and P-type films were separated on the substrate, and between them, a Au thin film was deposited by direct-current sputtering. We observed partial Peltier effect in the device.

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