Reliability enhancement in dipole-doped metal oxide semiconductor capacitor induced by low-temperature and high-pressure nitridation

2021 ◽  
Vol 14 (3) ◽  
pp. 034002
Author(s):  
Fu-Yuan Jin ◽  
Fong-Min Ciou ◽  
Wei-Chun Hung ◽  
Jen-Wei Huang ◽  
Chien-Yu Lin ◽  
...  
Keyword(s):  
High Pressure ◽  
Low Temperature ◽  
Metal Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Reliability Enhancement ◽  
Metal Oxide Semiconductor Capacitor

Low-Temperature Fabrication of High Quality Gate Insulator in Metal–Oxide–Semiconductor Capacitor Using Laser Annealing

2019 ◽  
Vol 40 (2) ◽  
pp. 167-170 ◽  
Author(s):  
Kyoung-Moon Yu ◽  
Hyung-Min Ji ◽  
Manh-Cuong Nguyen ◽  
An Hoang-Thuy Nguyen ◽  
Su-Jin Choi ◽  
...  
Keyword(s):  
Low Temperature ◽  
Metal Oxide ◽  
Laser Annealing ◽  
Metal Oxide Semiconductor ◽  
Gate Insulator ◽  
Oxide Semiconductor ◽  
High Quality ◽  
Metal Oxide Semiconductor Capacitor

Optimized Al-doped TiO2 gate insulator for metal-oxide-semiconductor capacitor on Ge substrate

2021 ◽  
Author(s):  
Dong Gun Kim ◽  
Cheol Hyun An ◽  
Sanghyeon Kim ◽  
Dae Seon Kwon ◽  
Junil Lim ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Leakage Current ◽  
Tio2 Film ◽  
Single Layer ◽  
Atomic Layer ◽  
Metal Oxide Semiconductor ◽  
Gate Insulator ◽  
Oxide Semiconductor ◽  
High K ◽  
Metal Oxide Semiconductor Capacitor

Atomic layer deposited TiO2- and Al2O3-based high-k gate insulator (GI) were examined for the Ge-based metal-oxide-semiconductor capacitor application. The single-layer TiO2 film showed a too high leakage current to be...

High-Electron-Mobility Ge n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with High-Pressure Oxidized Y2O3

2011 ◽  
Vol 4 (6) ◽  
pp. 064201 ◽  
Author(s):  
Tomonori Nishimura ◽  
Choong Hyun Lee ◽  
Toshiyuki Tabata ◽  
Sheng Kai Wang ◽  
Kosuke Nagashio ◽  
...  
Keyword(s):  
High Pressure ◽  
Metal Oxide ◽  
Electron Mobility ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
High Electron ◽  
High Electron Mobility

Effects of thermal and electrical stress on defect generation in InAs metal–oxide–semiconductor capacitor

2019 ◽  
Vol 467-468 ◽  
pp. 1161-1169 ◽  
Author(s):  
Min Baik ◽  
Hang-Kyu Kang ◽  
Yu-Seon Kang ◽  
Kwang-Sik Jeong ◽  
Changmin Lee ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Defect Generation ◽  
Electrical Stress ◽  
Metal Oxide Semiconductor Capacitor
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