scholarly journals Conservation Laws at Physical Origins of Universal Mobility in MOSFET Inversion Layers in Consilience with River Flow in a Gravitational Field

2021 ◽  
Author(s):  
F. Shoucair
Keyword(s):  
Gravitational Field ◽  
Energy Conservation ◽  
Charge Density ◽  
Potential Field ◽  
River Flow ◽  
Inversion Layer ◽  
Mobile Charge ◽  
Conservation Principles ◽  
Charge Flow ◽  
Finite Extent

The salient properties of charge flow (or current) along the MOSFET’s inversion layer are shown to be analogous to a river’s flow in a gravitational potential field, insofar as both are fundamentally governed by energy conservation principles, and their laminar and turbulent conditions determined by friction losses at shallow depths. We formulate an accurate model for a non–uniform mobile charge density giving rise to a mean potential<i> </i>across an inversion layer of finite extent<i>,</i> which we measure by a sensitive experimental method …

scholarly journals Conservation Laws at Physical Origins of Universal Mobility in MOSFET Inversion Layers in Consilience with River Flow in a Gravitational Field

2021 ◽  
Author(s):  
F. Shoucair
Keyword(s):  
Gravitational Field ◽  
Energy Conservation ◽  
Charge Density ◽  
Potential Field ◽  
River Flow ◽  
Inversion Layer ◽  
Mobile Charge ◽  
Conservation Principles ◽  
Charge Flow ◽  
Finite Extent

The salient properties of charge flow (or current) along the MOSFET’s inversion layer are shown to be analogous to a river’s flow in a gravitational potential field, insofar as both are fundamentally governed by energy conservation principles, and their laminar and turbulent conditions determined by friction losses at shallow depths. We formulate an accurate model for a non–uniform mobile charge density giving rise to a mean potential<i> </i>across an inversion layer of finite extent<i>,</i> which we measure by a sensitive experimental method …

scholarly journals Modeling the MOSFET's Inversion Layer and Its Universal Mobility: A New Experimental Method

2021 ◽  
Author(s):  
F. Shoucair
Keyword(s):  
Experimental Method ◽  
Inversion Layer ◽  
Harmonic Distortion ◽  
Drain Current ◽  
Flow Conditions ◽  
Mobile Charge ◽  
Low Field ◽  
Effective Mobility ◽  
Higher Order Derivative ◽  
Finite Extent

<div>We formulate a simple, yet accurate, model for a non-uniform mobile charge density ρ(z) giving rise to a mean potential Ψ* across an inversion layer of finite extent, which we measure by means of a novel, sensitive, experimental method involving nulls of harmonic distortion components (D2 ≈ D3 ≈ 0) of the drain current under sinusoidal excitation below saturation. We thus establish analytically and experimentally, that the low-field, "universal" effective mobility µ<sub>eff</sub> varies as ~(E*<sub>T</sub>)<sup>-1/3 </sup>for transversal fields E<sub>T</sub>*= <b>-</b>(1/ε<sub>si</sub>)<b>·</b>[ɳQ<sub>i</sub> + Q<sub>b</sub>] <b>≤ </b>0.5 MV/cm, wherein ɳ varies continuously between 1/2 and 1/3. We also establish and observe that the higher order, derivative, parameter θ<sub>T</sub> quantifying µ<sub>eff</sub>’s modulation by E*<sub>T</sub> varies as ~(E*<sub>T</sub>)<sup>-5/3</sup> under laminar flow conditions, thereby further corroborating the foregoing effects and interpretations thereof.</div>

scholarly journals Modeling the MOSFET's Inversion Layer and Its Universal Mobility: A New Experimental Method

2021 ◽  
Author(s):  
F. Shoucair
Keyword(s):  
Experimental Method ◽  
Inversion Layer ◽  
Harmonic Distortion ◽  
Drain Current ◽  
Flow Conditions ◽  
Mobile Charge ◽  
Low Field ◽  
Effective Mobility ◽  
Higher Order Derivative ◽  
Finite Extent

<div>We formulate a simple, yet accurate, model for a non-uniform mobile charge density ρ(z) giving rise to a mean potential Ψ* across an inversion layer of finite extent, which we measure by means of a novel, sensitive, experimental method involving nulls of harmonic distortion components (D2 ≈ D3 ≈ 0) of the drain current under sinusoidal excitation below saturation. We thus establish analytically and experimentally, that the low-field, "universal" effective mobility µ<sub>eff</sub> varies as ~(E*<sub>T</sub>)<sup>-1/3 </sup>for transversal fields E<sub>T</sub>*= <b>-</b>(1/ε<sub>si</sub>)<b>·</b>[ɳQ<sub>i</sub> + Q<sub>b</sub>] <b>≤ </b>0.5 MV/cm, wherein ɳ varies continuously between 1/2 and 1/3. We also establish and observe that the higher order, derivative, parameter θ<sub>T</sub> quantifying µ<sub>eff</sub>’s modulation by E*<sub>T</sub> varies as ~(E*<sub>T</sub>)<sup>-5/3</sup> under laminar flow conditions, thereby further corroborating the foregoing effects and interpretations thereof.</div>

scholarly journals A comparative study of hole and electron inversion layer quantization in MOS structures

2010 ◽  
Vol 7 (2) ◽  
pp. 185-193 ◽  
Author(s):  
Amit Chaudhry ◽  
Nath Roy
Keyword(s):  
Charge Density ◽  
Marked Decrease ◽  
Inversion Layer ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Gate Capacitance ◽  
Variation Approach ◽  
Inversion Charge ◽  
Mos Structures ◽  
Good Agreement

In this paper, an analytical model has been developed to study inversion layer quantization in nanoscale Metal Oxide Semiconductor Field Effect Oxide p-(MOSFET). n-MOSFETs have been studied using the variation approach and the p-MOSFETs have been studied using the triangular well approach. The inversion charge density and gate capacitance analysis for both types of transistors has been done. There is a marked decrease in the inversion charge density and the capacitance of the p-MOSFET as compared to n-MOSFETs. The results are compared with the numerical results showing good agreement.

Multi-Robots Path Planning Based on Improved Artificial Potential Field Method

2012 ◽  
Vol 562-564 ◽  
pp. 937-940 ◽  
Author(s):  
Yu Lan Hu ◽  
Qi Song Zhang
Keyword(s):  
Gravitational Field ◽  
Path Planning ◽  
Potential Field ◽  
Field Method ◽  
Artificial Potential Field ◽  
Target Point ◽  
Field Function ◽  
Dynamic Movement ◽  
Potential Field Method ◽  
Artificial Potential Field Method

Mobile path planning is a focus area and the key to intelligent technologies in robot. As one of the most basic and important topics the problem of mobile robot path planning solve the trouble that the robot avoid obstacles in the environment and how to successfully reach the destination. On the emergence of case that is the robot can not reach the target point and easy to fall into local minimum .This will be optimized by improving the way repulsive field function, When the robot close to the target point, not only the gravity of the gravitational field continue to reduce but also the repulsion of the repulsive force field has also been decreasing. This would solve the problem that when the robot reach the target point but easy to fall into local minimal solution. In traditional artificial potential field method, the target is static, but due to prey (i.e. target) is dynamic in this article, the traditional artificial potential field of gravitational field function is not suitable for the situation discussed. Therefore this paper puts forward a dynamic movement is based on the goal of the gravitational field of new functions.

Suppress of Substrate-Assisted Depletion Effects in Super Junction LDMOS on Thin Film SOI

2013 ◽  
Vol 721 ◽  
pp. 521-526
Author(s):  
Chao Xia ◽  
Xin Hong Cheng ◽  
Zhong Jian Wang ◽  
Da Wei He ◽  
Duo Cao ◽  
...  
Keyword(s):  
Charge Density ◽  
Breakdown Voltage ◽  
Inversion Layer ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
Cmos Process ◽  
Device Structure ◽  
Depletion Effect ◽  
Fabrication Procedure ◽  
A Charge

Conventional super-junction lateral double diffused MOSFET (SJ-LDMOS) fabricated on Silicon on Insulator (SOI) substrate suffers from low breakdown voltage under the same on-resistance due to substrate-assisted depletion effect. To suppress this effect, it is important to find the charge density in the inversion layer under buried oxide. In this paper, we propose a charge density equation and its formulation. The results were used in a 3D device simulator to optimize the device structure. The experimental results confirm that the equation is useful to optimize device performance. The breakdown voltage of structure increased 54% and on-state-resistance decreased 58% compared to conventional SJ device. The device fabrication procedure is fully compatible with mainstream SOI CMOS process.

scholarly journals Physical Origins of Universal Mobility in MOSFET Inversion Layers: Conservation Laws

2021 ◽  
Author(s):  
F. Shoucair
Keyword(s):  
Inversion Layer ◽  
Momentum Conservation ◽  
Fundamental Constants ◽  
Flow Conditions ◽  
Low Field ◽  
Maximum Value ◽  
Effective Mobility ◽  
Conservation Principles ◽  
Quantum Mechanical Effects ◽  
Energy And Momentum

The salient properties of charge flow (or current) along the MOSFET’s inversion layer are shown to be consilient with a river’s flow in a gravitational potential field, insofar as both are fundamentally governed by energy conservation principles, and their laminar and turbulent conditions determined by friction losses at shallow depths. We establish analytically that the low-field, "universal" effective mobility, μ<sub>eff </sub><b>, </b>long reported to vary as ~(E*<sub>T</sub>)<sup>-1/3</sup> for transversal fields below 0.5 MV/cm, is manifestation and consequence of both energy and momentum conservation under laminar flow conditions and quantum mechanical effects, in which case the inversion layer’s mean thickness also varies as ~(E*<sub>T</sub>)<sup>-1/3</sup> up to a maximum value E*<sub>T</sub> ≈ 0.35 MV/cm at 300K, determined only by interface "terrain" amplitude and fundamental constants.

Reply to I. R. Qureshi by the Authors

Geophysics ◽  
1977 ◽  
Vol 42 (3) ◽  
pp. 663-663
Author(s):  
B. K. Bhattacharyya ◽  
M. E. Navolio
Keyword(s):  
Magnetic Field ◽  
General Practice ◽  
Gravitational Field ◽  
Potential Field ◽  
Gravity Anomalies ◽  
The Body ◽  
Point Mass ◽  
Convolution Approach ◽  
Magnetic And Gravity Anomalies

In order to determine expressions for magnetic and gravity anomalies generated by a body of known shape, it is the general practice to integrate the dipolar magnetic field or the gravitational field due to a point mass over the volume occupied by the body. The digital convolution approach, as discussed in the above paper, makes it unnecessary to perform the integration analytically and to use a complicated expression for computing the anomalous potential field.

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