scholarly journals Nanotopographical control of surfaces using chemical vapor deposition processes

2017 ◽  
Vol 8 ◽  
pp. 1250-1256 ◽  
Author(s):  
Meike Koenig ◽  
Joerg Lahann
Keyword(s):  
Vapor Deposition ◽  
Three Dimensional ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Polymer Coatings ◽  
Oblique Angle ◽  
Concise Review ◽  
Deposition Processes ◽  
Deposition Techniques ◽  
Post Deposition

In recent years much work has been conducted in order to create patterned and structured polymer coatings using vapor deposition techniques – not only via post-deposition treatment, but also directly during the deposition process. Two-dimensional and three-dimensional structures can be achieved via various vapor deposition strategies, for instance, using masks, exploiting surface properties that lead to spatially selective deposition, via the use of additional porogens or by employing oblique angle polymerization deposition. Here, we provide a concise review of these studies.

Analysis of Buoyancy and Tube Rotation Relative to the Modified Chemical Vapor Deposition Process

1990 ◽  
Vol 112 (4) ◽  
pp. 1063-1069 ◽  
Author(s):  
M. Choi ◽  
Y. T. Lin ◽  
R. Greif
Keyword(s):  
Secondary Flow ◽  
Vapor Deposition ◽  
Particle Deposition ◽  
Three Dimensional ◽  
Chemical Vapor ◽  
Horizontal Tube ◽  
Deposition Process ◽  
Secondary Flows ◽  
Secondary Motion

The secondary flows resulting from buoyancy effects in respect to the MCVD process have been studied in a rotating horizontal tube using a perturbation analysis. The three-dimensional secondary flow fields have been determined at several axial locations in a tube whose temperature varies in both the axial and circumferential directions for different rotational speeds. For small rotational speeds, buoyancy and axial convection are dominant and the secondary flow patterns are different in the regions near and far from the torch. For moderate rotational speeds, the effects of buoyancy, axial and angular convection are all important in the region far from the torch where there is a spiraling secondary flow. For large rotational speeds, only buoyancy and angular convection effects are important and no spiraling secondary motion occurs far downstream. Compared with thermophoresis, the important role of buoyancy in determining particle trajectories in MCVD is presented. As the rotational speed increases, the importance of the secondary flow decreases and the thermophoretic contribution becomes more important. It is noted that thermophoresis is considered to be the main cause of particle deposition in the MCVD process.

Fabrication and electrochemical characterization of super-capacitor based on three-dimensional composite structure of graphene and a vertical array of carbon nanotubes

2018 ◽  
Vol 52 (22) ◽  
pp. 3039-3044 ◽  
Author(s):  
Daniel Choi ◽  
Eui-Hyeok Yang ◽  
Waqas Gill ◽  
Aaron Berndt ◽  
Jung-Rae Park ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Vapor Deposition ◽  
Composite Structure ◽  
Graphene Layer ◽  
Three Dimensional ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Silicon Substrates ◽  
Vertical Array ◽  
Pressure Chemical

We have demonstrated a three-dimensional composite structure of graphene and carbon nanotubes as electrodes for super-capacitors. The goal of this study is to fabricate and test the vertically grown carbon nanotubes on the graphene layer acting as a spacer to avoid self-aggregation of the graphene layers while realizing high active surface area for high energy density, specific capacitance, and power density. A vertical array of carbon nanotubes on silicon substrates was grown by a low-pressure chemical vapor deposition process using anodized aluminum oxide nanoporous template fabricated on silicon substrates. Subsequently, a graphene layer was grown by another low-pressure chemical vapor deposition process on top of a vertical array of carbon nanotubes. The Raman spectra confirmed the successful growth of carbon nanotubes followed by the growth of high-quality graphene. The average measured capacitance of the three-dimensional composite structure of graphene-carbon nanotube was 780 µFcm−2 at 100 mVs−1.

Coherent island formation of Cu2O films grown by chemical vapor deposition on MgO(110)

2001 ◽  
Vol 16 (8) ◽  
pp. 2408-2414 ◽  
Author(s):  
P. R. Markworth ◽  
X. Liu ◽  
J. Y. Dai ◽  
W. Fan ◽  
T. J. Marks ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Strain Relaxation ◽  
Three Dimensional ◽  
High Mobility ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Growth Conditions ◽  
Island Formation ◽  
Transmission Electron

Cuprous oxide (Cu2O) films have been grown on single-crystal MgO(110) substrates by a chemical vapor deposition process in the temperature range 690–790 °C. X-ray diffraction measurements show that phase-pure, highly oriented Cu2O films form at these temperatures. The Cu2O films are observed to grow by an island-formation mechanism on this substrate. Films grown at 690 °C uniformly coat the substrate except for micropores between grains. However, at a growth temperature of 790 °C, an isolated, three-dimensional island morphology develops. Using a transmission electron microscopy and atomic force microscope, both dome- and hut-shaped islands are observed and are shown to be coherent and epitaxial. The isolated, coherent islands form under high mobility growth conditions where geometric strain relaxation occurs before misfit dislocation can be introduced. This rare observation for oxides is attributed to the relatively weak bonding of Cu2O, which also has a relatively low melting temperature.

Electron Beam Assisted Chemical Vapor Deposition of Gold in an Environmental Tem

1995 ◽  
Vol 388 ◽  
Author(s):  
John Kouvetakis ◽  
Renu SharmA ◽  
B. L. Ramakrisna ◽  
Jeff Drucker ◽  
Paul Seidler
Keyword(s):  
Electron Beam ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Three Dimensional ◽  
Chemical Vapor ◽  
Deposition Process ◽  
In Situ Observation ◽  
Beam Irradiation ◽  
Environmental Tem ◽  
Diffraction Patterns

AbstractWe demonstrate a novel technique for in situ observation of the chemical vapor deposition of high purity gold using ethyl(trimethylphosphine)gold(I). an environmental transmission electron microscope with 3.8 eV resolution was used to observe and compare the growth of the material with or without electron beam irradiation (120 keV) with Si (100) substrate temperatures ranging from 125-200 °C. Typical precursor pressures of 10-4 Torr and E-beam irradiation resulted in rapid growth of virtually continuous gold films. thermal deposition without the beam resulted in low nucleation densities, low deposition rates, and island-like growth. Images and diffraction patterns acquired during the deposition process indicated polycrystalline gold and elemental analysis at the nanometer scale showed that the films had excellent chemical purity. atomic force microscopy was also used to investigate the three dimensional morphology of the materials. the most notable result of the deposition process is the dramatic enhancement of the growth rate due to the beam irradiation.

scholarly journals Deposition Methods for Microstructured and Nanostructured Coatings on Metallic Bone Implants: A Review

2017 ◽  
Vol 2017 ◽  
pp. 1-9 ◽  
Author(s):  
Bailey Moore ◽  
Ebrahim Asadi ◽  
Gladius Lewis
Keyword(s):  
Plasma Spray ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Chemical Vapor ◽  
Aerosol Deposition ◽  
Deposition Process ◽  
Future Research ◽  
Bone Implants ◽  
Implant Surface ◽  
Deposition Processes

A review of current deposition processes is presented as they relate to osseointegration of metallic bone implants. The objective is to present a comprehensive review of different deposition processes used to apply microstructured and nanostructured osteoconductive coatings on metallic bone implants. Implant surface topography required for optimal osseointegration is presented. Five of the most widely used osteoconductive coating deposition processes are reviewed in terms of their microstructure and nanostructure, usable thickness, and cost, all of which are summarized in tables and charts. Plasma spray techniques offer cost-effective coatings but exhibit deficiencies with regard to osseointegration such as high-density, amorphous coatings. Electrodeposition and aerosol deposition techniques facilitate the development of a controlled-microstructure coating at a similar cost. Nanoscale physical vapor deposition and chemical vapor deposition offer an alternative approach by allowing the coating of a highly structured surface without significantly affecting the microstructure. Various biomedical studies on each deposition process are reviewed along with applicable results. Suggested directions for future research include further optimization of the process-microstructure relation, crystalline plasma spray coatings, and the deposition of discrete coatings by additive manufacturing.

A Three-Dimensional Analysis of the Flow and Heat Transfer for the Modified Chemical Vapor Deposition Process Including Buoyancy, Variable Properties, and Tube Rotation

1991 ◽  
Vol 113 (2) ◽  
pp. 400-406 ◽  
Author(s):  
Y. T. Lin ◽  
M. Choi ◽  
R. Greif
Keyword(s):  
Heat Transfer ◽  
Chemical Vapor Deposition ◽  
Secondary Flow ◽  
Vapor Deposition ◽  
Axial Velocity ◽  
Particle Deposition ◽  
Three Dimensional ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Variable Properties

A study has been made of the heat transfer, flow, and particle deposition relative to the modified chemical vapor deposition (MCVD) process. The effects of variable properties, buoyancy, and tube rotation have been included in the study. The resulting three-dimensional temperature and velocity fields have been obtained for a range of conditions. The effects of buoyancy result in asymmetric temperature and axial velocity profiles with respect to the tube axis. Variable properties cause significant variations in the axial velocity along the tube and in the secondary flow in the region near the torch. Particle trajectories are shown to be strongly dependent on the tube rotation and are helices for large rotational speeds. The component of secondary flow in the radial direction is compared to the thermophoretic velocity, which is the primary cause of particle deposition in the MCVD process. Over the central portion of the tube the radial component of the secondary flow is most important in determining the motion of the particles.

scholarly journals Modeling and Simulation of a Chemical Vapor Deposition

2011 ◽  
Vol 2011 ◽  
pp. 1-25 ◽  
Author(s):  
J. Geiser ◽  
M. Arab
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Real Life ◽  
Chemical Vapor ◽  
Single Species ◽  
Deposition Process ◽  
Control Mechanisms ◽  
Metallic Bipolar Plates ◽  
Complicated Model ◽  
Deposition Processes

We are motivated to model PE-CVD (plasma enhanced chemical vapor deposition) processes for metallic bipolar plates, and their optimization for depositing a heterogeneous layer on the metallic plate. Moreover a constraint to the deposition process is a very low pressure (nearly a vacuum) and a low temperature (about 400 K). The contribution of this paper is to derive a multiphysics system of multiple physics problems that includes some assumptions to simplify the complicate process and allows of deriving a computable mathematical model without neglecting the real-life processes. To model the gaseous transport in the apparatus we employ mobile gas phase streams, immobile and mobile phases in a chamber that is filled with porous medium (plasma layers). Numerical methods are discussed to solve such multi-scale and multi phase models and to obtain qualitative results for the delicate multiphysical processes in the chamber. We discuss a splitting analysis to couple such multiphysical problems. The verification of such a complicated model is done with real-life experiments for single species. Such numerical simulations help to economize on expensive physical experiments and obtain control mechanisms for the delicate deposition process.

Chemical Vapor Deposition of Copper Alloys

1992 ◽  
Vol 282 ◽  
Author(s):  
Christopher J. Smart ◽  
Scott K. Reynolds ◽  
Carol L. Stanis ◽  
Arvind Patil ◽  
J. Thor Kirleis
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Copper Alloys ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Alloy Films ◽  
Physical Deposition ◽  
Conformal Coverage ◽  
Deposition Techniques ◽  
Selection Of

ABSTRACTChemical vapor deposition of metals is becoming a desirable alternative to physical deposition techniques (e.g. sputtering, evaporation) for applications in chip wiring. This is due to the possibility of achieving highly conformal coverage and low processing temperatures. Additionally, it is convenient to be able to enhance the physical properties (e.g. corrosion resistance, adhesion, electromigration resistance) of metal films used for chip interconnection by incorporation of an alloying agent. We have investigated the possibility of extending our current copper deposition process to allow for the deposition of copper alloys. By careful selection of the precursors and reactor conditions, simultaneous decomposition of the two compounds to give clean alloy films is effected. Using this co-deposition method, Cu-Co and Cu-Te alloy films were prepared. Precursor and reaction chemistry are discussed as well as some properties of the resulting films.

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