scholarly journals Effect of PECVD SiNx deposition process parameters on electrical properties of SiNx/AlGaN/GaN structures

2021 ◽  
Vol 7 (2) ◽  
pp. 63-71
Author(s):  
Kira L. Enisherlova ◽  
Lev A. Seidman ◽  
Ella M. Temper ◽  
Yuliy A. Kontsevoy
Keyword(s):  
Process Parameters ◽  
Surface Preparation ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Nitrogen Plasma ◽  
Fixed Charge ◽  
Electrical Parameters ◽  
High Oxygen Content ◽  
Gas Channel ◽  
Process Mode

The effect of parameters of plasma enhanced chemical vapor deposition (PECVD) processes for SiNx film fabrication on the electrical parameters of dielectric/АlGaN/GaN structures has been studied. The effect of growing film composition, additional heterostructure surface treatment with nitrogen plasma before dielectric deposition and HF biasing during treatment on the parameters of the С–V and I–V curves of SiNx/АlGaN/GaN structures has been analyzed. We show that films with nitrogen to silicon concentration ratios of 60 and 40% and a high oxygen content exhibit a decrease in the positive fixed charge in the structures although the I–V curves of the structures exhibit current oscillations. Information has been reported on the effect of PECVD process mode on current oscillation parameters, e.g. period and amplitude, and length of I–V curve section in which oscillations occur. Possible explanation of these oscillations has been suggested. Additional nitrogen plasma treatment of heterostructure surface before monosilane supply to the chamber changes the magnitude and sign of fixed charge and reduces the free carrier concentration in the 2D gas channel of SiNx/АlGaN/GaN heterostructures. Experimental evidence has been provided for the effect of PECVD process parameters and surface preparation on the electrical parameters of the heterostructures grown.

scholarly journals Plasma CVD of B-C-N Thin Films Using Triethylboron in Argon-Nitrogen Plasma

2020 ◽  
Author(s):  
Laurent Souqui ◽  
Justinas Palisaitis ◽  
Hans Högberg ◽  
Henrik Pedersen
Keyword(s):  
Dielectric Constant ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Nitrogen Plasma ◽  
Film Deposition ◽  
Low Density ◽  
Scanning Electron Micrographs ◽  
Elastic Recoil ◽  
Plasma Cvd ◽  
Plasma Chemical Vapor Deposition

<div> <p>Amorphous boron-carbon-nitrogen (B-C-N) films with low density are potentially interesting as alternative low-dielectric-constant (low-κ) materials for future electronic devices. Such applications require deposition at temperatures below 300 °C, making plasma chemical vapor deposition (plasma CVD) a preferred deposition method. Plasma CVD of B-C-N films is today typically done with separate precursors for B, C and N or with precursors containing B–N bonds and an additional carbon precursor. We present an approach to plasma CVD of B-C-N films based on triethylboron (B(C<sub>2</sub>H<sub>5</sub>)<sub>3</sub>) a precursor with B-C bonds in an argon-nitrogen plasma. From quantitative analysis with Time-of-Flight Elastic Recoil Detection Analysis (ToF-ERDA), we find that the deposition process can afford B-C-N films with a B/N ratio between 0.98 and 1.3 and B/C ratios between 3.4 and 8.6 and where the films contain between 3.6 and 7.8 at. % H and 6.6 and 20 at. % of O. The films have low density, from 0.32 to 1.6 g/cm<sup>3</sup> as determined from cross-section scanning electron micrographs and ToF-ERDA with morphologies ranging from smooth films to separated nanowalls. Scaning transmission electron microscopy shows that C and BN does not phase seperarte in the film. The static dielectric constant κ, measured by capacitance–voltage measurements<b>,</b> varies with the Ar concentration in the range from 3.3 to 35 for low and high Ar concentrations, respectively. We suggest that this dependence is caused by the energetic bombardment of plasma species during film deposition.</p> </div> <br>

Effect of Chemical Vapor Deposition Process Parameters on Graded SiC-SiO2 Coating

2014 ◽  
Vol 575 ◽  
pp. 134-137
Author(s):  
Zhi Qiang Fu ◽  
Yan Li Yu ◽  
Wen Yue ◽  
Cheng Biao Wang ◽  
Chun He Tang
Keyword(s):  
Chemical Vapor Deposition ◽  
Process Parameters ◽  
Vapor Deposition ◽  
Deposition Temperature ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Flow Rate Ratio ◽  
Carrier Gas ◽  
Low Concentration ◽  
Thermodynamic Computation

The effect of the chemical vapor deposition (CVD) process parameters on the structure of graded SiC-SiO2coating was studied through thermodynamic computation. The addition of enough hydrogen into the carrier gas is necessary for the synthesis of the graded SiC-SiO2coating. Both high deposition temperature and low deposition temperature make the change of the composition of the coating abrupt with the change of the composition of CVD atmosphere, which is harmful to the process control of the coating. A low concentration of reactants is preferred according to the thermodynamic computation but the deposition rate is too low at a low concentration of reactants. When hydrogen is the carrier gas and the concentration of SiCl4is between 1 – 2 vol%, the graded SiC-SiO2coating with a suitably graded distribution of SiC and SiO2can be easily obtained through gradually changing the flow rate ratio of methane and water vapor at 1100 - 1200 °C.

Influence of CVD Parameter on Structure of Graded SiC-C Coating

2014 ◽  
Vol 488-489 ◽  
pp. 53-56
Author(s):  
Yan Li Yu ◽  
Zhi Qiang Fu ◽  
Cheng Biao Wang
Keyword(s):  
Process Parameters ◽  
Deposition Temperature ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Molar Ratio ◽  
Gas Composition ◽  
High Concentration ◽  
Carrier Gas ◽  
High Deposition Temperature ◽  
Graded Coating

The influence of chemical vapor deposition process parameters including carrier gas composition, deposition temperature, and content of reactants on the structure of graded SiC-C coating is discussed on the basis of thermodynamic calculation in this paper. The addition of enough hydrogen into carrier gas is necessary for the fabrication graded SiC-C coating. The increase of deposition temperature benefits the control of composition in graded coating but the concentration of free Si and free C becomes high at a too high deposition temperature. A high concentration of reactants is preferred while more defects are apt to exist in coatings if the concentration of reactants is too high. The optimum CVD process parameters for graded SiC-C coating are: gradually changing the molar ratio of SiCl4 and CH4 from 0 to 1 when the concentration of CH4 in hydrogen is 1-2 vol%, and the deposition temperature is 1200-1500 °C.

scholarly journals Plasma CVD of B-C-N Thin Films Using Triethylboron in Argon-Nitrogen Plasma

2020 ◽  
Author(s):  
Laurent Souqui ◽  
Justinas Palisaitis ◽  
Hans Högberg ◽  
Henrik Pedersen
Keyword(s):  
Dielectric Constant ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Nitrogen Plasma ◽  
Film Deposition ◽  
Low Density ◽  
Scanning Electron Micrographs ◽  
Elastic Recoil ◽  
Plasma Cvd ◽  
Plasma Chemical Vapor Deposition

<div> <p>Amorphous boron-carbon-nitrogen (B-C-N) films with low density are potentially interesting as alternative low-dielectric-constant (low-κ) materials for future electronic devices. Such applications require deposition at temperatures below 300 °C, making plasma chemical vapor deposition (plasma CVD) a preferred deposition method. Plasma CVD of B-C-N films is today typically done with separate precursors for B, C and N or with precursors containing B–N bonds and an additional carbon precursor. We present an approach to plasma CVD of B-C-N films based on triethylboron (B(C<sub>2</sub>H<sub>5</sub>)<sub>3</sub>) a precursor with B-C bonds in an argon-nitrogen plasma. From quantitative analysis with Time-of-Flight Elastic Recoil Detection Analysis (ToF-ERDA), we find that the deposition process can afford B-C-N films with a B/N ratio between 0.98 and 1.3 and B/C ratios between 3.4 and 8.6 and where the films contain between 3.6 and 7.8 at. % H and 6.6 and 20 at. % of O. The films have low density, from 0.32 to 1.6 g/cm<sup>3</sup> as determined from cross-section scanning electron micrographs and ToF-ERDA with morphologies ranging from smooth films to separated nanowalls. Scaning transmission electron microscopy shows that C and BN does not phase seperarte in the film. The static dielectric constant κ, measured by capacitance–voltage measurements<b>,</b> varies with the Ar concentration in the range from 3.3 to 35 for low and high Ar concentrations, respectively. We suggest that this dependence is caused by the energetic bombardment of plasma species during film deposition.</p> </div> <br>

Reaction couples of ceramic thin films prepared by CVD

1988 ◽  
Vol 46 ◽  
pp. 798-799
Author(s):  
D.W. Susnitzky ◽  
S.R. Summerfelt ◽  
C.B. Carter
Keyword(s):  
Thin Film ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Solid State Reactions ◽  
Spatial Distributions ◽  
Diffusion Couples ◽  
Kinetics Studies ◽  
Ceramic Thin Films ◽  
Initial Stage

Solid-state reactions have traditionally been studied in the form of diffusion couples. This ‘bulk’ approach has been modified, for the specific case of the reaction between NiO and Al2O3, by growing NiAl2O4 (spinel) from electron-transparent Al2O3 TEM foils which had been exposed to NiO vapor at 1415°C. This latter ‘thin-film’ approach has been used to characterize the initial stage of spinel formation and to produce clean phase boundaries since further TEM preparation is not required after the reaction is completed. The present study demonstrates that chemical-vapor deposition (CVD) can be used to deposit NiO particles, with controlled size and spatial distributions, onto Al2O3 TEM specimens. Chemical reactions do not occur during the deposition process, since CVD is a relatively low-temperature technique, and thus the NiO-Al2O3 interface can be characterized. Moreover, a series of annealing treatments can be performed on the same sample which allows both Ni0-NiAl2O4 and NiAl2O4-Al2O3 interfaces to be characterized and which therefore makes this technique amenable to kinetics studies of thin-film reactions.

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