Analysis of Plasmonic Structures by Spectroscopic Ellipsometry

2016 ◽  
pp. 208-239
Author(s):  
Jose Luis Pau ◽  
Antonio García Marín ◽  
María Jesús Hernández ◽  
Manuel Cervera ◽  
Juan Piqueras
Keyword(s):  
Thin Films ◽  
Spectroscopic Ellipsometry ◽  
Electromagnetic Waves ◽  
Near Infrared ◽  
Electromagnetic Spectrum ◽  
Surface Polaritons ◽  
Metal Thin Films ◽  
Plasmonic Structures ◽  
Large Sections ◽  
Total Internal Reflection Ellipsometry

This chapter focuses on the plasmonic effects that appear in the ellipsometric functions and the pseudodielectric function when metal thin films and nanoparticles are analyzed by spectroscopic ellipsometry in the visible, near infrared and ultraviolet regions of the electromagnetic spectrum. The chapter is structured in two large sections. The first section reviews the basics of total internal reflection ellipsometry (TIRE), based on the excitation of surface polaritons in metal thin films. The conditions required to excite polaritons in TIRE systems are analyzed along with the main characteristics of those electromagnetic waves. The second section of the chapter is devoted to study the optical properties of plasmonic resonances in nanostructures and the characteristics introduced in the dielectric functions. The treatment of optical anisotropies and Fano resonances in the ellipsometric models is discussed. The last section of the chapter reviews the state of the art of the technique in biosensing applications.

Spectroscopic ellipsometry study of liquid crystal and polymeric thin films in visible and near infrared

2004 ◽  
Vol 14 (2) ◽  
pp. 185-192 ◽  
Author(s):  
V. Tkachenko ◽  
A. Marino ◽  
F. Vita ◽  
F. D’Amore ◽  
L. De Stefano ◽  
...  
Keyword(s):  
Thin Films ◽  
Liquid Crystal ◽  
Spectroscopic Ellipsometry ◽  
Near Infrared ◽  
Polymeric Thin Films

scholarly journals APPLICATIONS OF CHEMICALLY SYNTHESIZED CUS: PBO ALLOYED THIN FILMS IN MULTILAYER SOLAR CELLS AND OPTOELECTRONICS

2020 ◽  
Vol 5 (11) ◽  
pp. 13-24
Author(s):  
Joseph Ijeoma Onwuemeka ◽  
Ngozi Patricia Ebosie ◽  
Michael Chukwukadibia Anumaka ◽  
Margaret Chinyelu Enedoh
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Near Infrared ◽  
Optical Transmittance ◽  
Passive Layer ◽  
Ultraviolet Region ◽  
Electromagnetic Spectrum ◽  
Deposition Condition ◽  
Double Beam ◽  
Two Samples

CuS: PbO, alloyed thin films were successfully deposited on glass substrates under the deposition condition of 40oC of NaOH solution, using two solution based methods: successive ionic layer adsorption and reaction (SILAR) and solution growth technique. The crystallographic studies were done using X-ray diffractometer (XRD) and scanning electron microscope (SEM). The deposited alloyed samples were annealed at 250oC and 1500C. using Master Chef Annealing Machine. Rutherford backscattering Spectroscopy (RBS) analysis confirmed the percentage of the elements of copper, lead, sulphur and oxygen in the alloyed thin films. The optical characterization was carried out using UV-1800 double beam spectrophotometer. Sample cp1 annealed at 250 oC has an optical transmittance of 27% -71% in the ultraviolet region, 71%-83% in the visible and 83%-88% in the near infrared regions of electromagnetic spectrum. The alloyed thin films of samples cp2 of CuS:PbO annealed at 150oC, show optical transmittance of 15%-61% in the ultraviolet region, 61%-59% in the visible, and becomes linear through the near-infrared regions of electromagnetic spectrum. The two samples, have equal direct wide band gap of 3.65±0.05eV. From the spectral qualities, these compounds alloyed thin films may found useful in passive layer in heat and cold mirror application, vulcanization in tyre production due its thermal stability, active multilayer in various types of solar cells, liquid crystal displays, flat panel displays for optoelectronic applications and gas censor applications.

Optical properties of Au–TiO2 and Au–SiO2 granular metal thin films studied by Spectroscopic Ellipsometry

2017 ◽  
Vol 405 ◽  
pp. 240-246 ◽  
Author(s):  
H. Bakkali ◽  
E. Blanco ◽  
M. Dominguez ◽  
M.B. de la Mora ◽  
C. Sánchez-Aké ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Spectroscopic Ellipsometry ◽  
Metal Thin Films

Transmission Electron Microscopy studies of the vacancy ordering in YSI2-X thin films

1991 ◽  
Vol 49 ◽  
pp. 562-563
Author(s):  
F.-R. Chen ◽  
T. L. Lee ◽  
L. J. Chen
Keyword(s):  
Crystal Structure ◽  
Electron Microscopy ◽  
Thin Films ◽  
Diffraction Pattern ◽  
Annealing Temperature ◽  
Lattice Mismatch ◽  
Si Substrate ◽  
Metal Thin Films ◽  
Transmission Electron ◽  
Vacancy Ordering

YSi2-x thin films were grown by depositing the yttrium metal thin films on (111)Si substrate followed by a rapid thermal annealing (RTA) at 450 to 1100°C. The x value of the YSi2-x films ranges from 0 to 0.3. The (0001) plane of the YSi2-x films have an ideal zero lattice mismatch relative to (111)Si surface lattice. The YSi2 has the hexagonal AlB2 crystal structure. The orientation relationship with Si was determined from the diffraction pattern shown in figure 1(a) to be and . The diffraction pattern in figure 1(a) was taken from a specimen annealed at 500°C for 15 second. As the annealing temperature was increased to 600°C, superlattice diffraction spots appear at position as seen in figure 1(b) which may be due to vacancy ordering in the YSi2-x films. The ordered vacancies in YSi2-x form a mesh in Si plane suggested by a LEED experiment.

Laser-Direct Patterning of Nanostructured Metal Thin Films

2010 ◽  
Vol 48 (2) ◽  
pp. 163-168 ◽  
Author(s):  
Hyunkwon Shin ◽  
Hyeongjae Lee ◽  
Hyeongjae Yoo ◽  
Ki-Soo Lim ◽  
Myeongkyu Lee
Keyword(s):  
Thin Films ◽  
Metal Thin Films ◽  
Direct Patterning ◽  
Nanostructured Metal

scholarly journals Metalorganic chemical vapor deposition of InN quantum dots and nanostructures

2021 ◽  
Vol 10 (1) ◽  
Author(s):  
Caroline E. Reilly ◽  
Stacia Keller ◽  
Shuji Nakamura ◽  
Steven P. DenBaars
Keyword(s):  
Quantum Dots ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Near Infrared ◽  
Optoelectronic Devices ◽  
Chemical Vapor ◽  
Electromagnetic Spectrum ◽  
Material System ◽  
Metalorganic Chemical

AbstractUsing one material system from the near infrared into the ultraviolet is an attractive goal, and may be achieved with (In,Al,Ga)N. This III-N material system, famous for enabling blue and white solid-state lighting, has been pushing towards longer wavelengths in more recent years. With a bandgap of about 0.7 eV, InN can emit light in the near infrared, potentially overlapping with the part of the electromagnetic spectrum currently dominated by III-As and III-P technology. As has been the case in these other III–V material systems, nanostructures such as quantum dots and quantum dashes provide additional benefits towards optoelectronic devices. In the case of InN, these nanostructures have been in the development stage for some time, with more recent developments allowing for InN quantum dots and dashes to be incorporated into larger device structures. This review will detail the current state of metalorganic chemical vapor deposition of InN nanostructures, focusing on how precursor choices, crystallographic orientation, and other growth parameters affect the deposition. The optical properties of InN nanostructures will also be assessed, with an eye towards the fabrication of optoelectronic devices such as light-emitting diodes, laser diodes, and photodetectors.

Strong optical anisotropies of F16CuPc thin films studied by spectroscopic ellipsometry

2003 ◽  
Vol 119 (12) ◽  
pp. 6335-6340 ◽  
Author(s):  
M. I. Alonso ◽  
M. Garriga ◽  
J. O. Ossó ◽  
F. Schreiber ◽  
E. Barrena ◽  
...  
Keyword(s):  
Thin Films ◽  
Spectroscopic Ellipsometry
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