Full Adder Operation Based on Si Nanodot Array Device with Multiple Inputs and Outputs

2011 ◽  
pp. 131-139
Author(s):  
Takuya Kaizawa ◽  
Mingyu Jo ◽  
Masashi Arita ◽  
Akira Fujiwara ◽  
Kenji Yamazaki ◽  
...  
Keyword(s):  
Full Adder ◽  
Silicon On Insulator ◽  
Single Electron ◽  
Nanodot Array ◽  
Half Adder ◽  
Electron Effects ◽  
Inputs And Outputs

A highly functional Si nanodot array device that operates by means of single-electron effects was experimentally demonstrated. The device features many input gates, and many outputs can be attached. A nanodot array device with three input gates and two output terminals was fabricated on a silicon-on-insulator wafer using conventional Si MOS processes. Its feasibility was demonstrated by its operation as both a half adder and a full adder when the operation voltage was carefully selected.

Si Nanodot Device Fabricated by Thermal Oxidation and their Applications

2011 ◽  
Vol 470 ◽  
pp. 175-183
Author(s):  
Yasuo Takahashi ◽  
Ming Yu Jo ◽  
Takuya Kaizawa ◽  
Yuki Kato ◽  
Masashi Arita ◽  
...  
Keyword(s):  
Full Adder ◽  
Silicon On Insulator ◽  
Single Electron ◽  
Quantum Computers ◽  
Electrical Characteristics ◽  
Easy Method ◽  
Half Adder ◽  
Single Electron Devices ◽  
The Wire ◽  
New Applications

Small single-electron devices (SEDs) consisting of many Si nanodots are fabricated on a silicon-on-insulator (SOI) wafer by means of pattern-dependent oxidation (PADOX) method. We investigated SEDs from two kinds of viewpoint. One is how to fabricate the nanodots, especially coupled nanodots, which are important to achieve quantum computers and single-electron transfer devices. The other is demonstration of new applications that tolerate the size fluctuation. In order to achieve multi-coupled nanodots, we developed an easy method by applying PADOX to a specially designed Si nanowire which has small constrictions at the ends of the wire. We confirmed the double-dot formation and position of the Si nanodots in the wire by analyzing the measured electrical characteristics. To achieve high functionality together with low-power consumption and tolerance to size fluctuation, we developed nanodot array device which has many input gates and outputs terminals. The fabricated three-input and two-output nanodot device actually provide high functionality such as a half adder and a full adder.

Full Adder Operation Based on Si Nanodot Array Device with Multiple Inputs and Outputs

2009 ◽  
Vol 1 (2) ◽  
pp. 58-69 ◽  
Author(s):  
Takuya Kaizawa ◽  
Mingyu Jo ◽  
Masashi Arita ◽  
Akira Fujiwara ◽  
Kenji Yamazaki ◽  
...  
Keyword(s):  
Full Adder ◽  
Nanodot Array ◽  
Inputs And Outputs

Single-Electron Transistors with Sidewall Depletion Gates on a Silicon-On-Insulator Nano-Wire

2002 ◽  
Vol 41 (Part 1, No. 4B) ◽  
pp. 2574-2577 ◽  
Author(s):  
Kyung Rok Kim ◽  
Dae Hwan Kim ◽  
Suk-Kang Sung ◽  
Jong Duk Lee ◽  
Byung-Gook Park ◽  
...  
Keyword(s):  
Silicon On Insulator ◽  
Single Electron ◽  
Single Electron Transistors ◽  
Electron Transistors

Silicon single-electron tunneling device fabricated in an undulated ultrathin silicon-on-insulator film

2001 ◽  
Vol 90 (7) ◽  
pp. 3551-3557 ◽  
Author(s):  
Ken Uchida ◽  
Junji Koga ◽  
Ryuji Ohba ◽  
Shin-ichi Takagi ◽  
Akira Toriumi
Keyword(s):  
Electron Tunneling ◽  
Silicon On Insulator ◽  
Single Electron ◽  
Insulator Film ◽  
Single Electron Tunneling

Si Nanocrystal Memory Cell with Room-Temperature Single Electron Effects

2001 ◽  
Vol 40 (Part 1, No. 2A) ◽  
pp. 447-451 ◽  
Author(s):  
Ilgweon Kim ◽  
Sangyeon Han ◽  
Kwangseok Han ◽  
Jongho Lee ◽  
Hyungcheol Shin
Keyword(s):  
Room Temperature ◽  
Memory Cell ◽  
Single Electron ◽  
Si Nanocrystal ◽  
Nanocrystal Memory ◽  
Electron Effects
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