The Heat Treatment Characteristics of Hydroxyapatite Thin Films Deposited by RF Sputtering

RF sputtering process was applied to produce thin hydroxyapatite(HAp, Ca10(PO4)6(OH)2) films on Ti-6Al-4V alloy substrates. The effects of different heat treatment conditions on the bonding strength between HAp thin films and Ti-6Al-4V alloy substrates were studied. Before deposition, the Ti-6Al-4V alloy substrates were heat treated for 1hr at 850°C under 3.0×10-3torr, and after deposition, the HAp thin films were heat treated for 1hr at 400°C, 600°C and 800°C under the atmosphere, and analyzed optical microscope, FESEM, FTIR, XRD, nano-indentor, micro-vickers hardness, respectively. Experimental results represented that the HAp thin films on the heat treated substrates had higher hardness than none-heat treated substrates before the deposition.

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InN PHOTOCONDUCTORS ON DIFFERENT ORIENTATIONS OF Si SUBSTRATES

International Journal of Modern Physics B ◽

10.1142/s0217979212501378 ◽

2012 ◽

Vol 26 (31) ◽

pp. 1250137 ◽

Cited By ~ 7

Author(s):

M. AMIRHOSEINY ◽

Z. HASSAN ◽

S. S. NG ◽

L. S. CHUAH ◽

M. A. AHMAD ◽

...

Keyword(s):

Thin Films ◽

Heat Treatment ◽

Ohmic Contact ◽

Room Temperature ◽

Thermal Evaporation ◽

Indium Nitride ◽

Rf Sputtering ◽

Nitrogen Gas ◽

Si Substrates ◽

Current Voltage

We have fabricated photoconductors of indium nitride (InN) grown by radio frequency (RF) sputtering. The InN thin films were deposited on Si (100), Si (110) and Si (111) substrates at room temperature. The Ag/Al contact has been deposited by thermal evaporation in vacuum (10-5 Torr ) and then annealed under the flowing of the nitrogen gas environment in order to relieve stress and also induce any favorable reactions between metals and the semiconductor. Current–voltage (I–V) measurements after heat treatment at 400°C were carried out for samples in dark and illumination conditions. It was found that Ag/Al formed a good ohmic contact on top of InN . In addition, the characteristics of the contacts were significantly affected by the orientation of substrates.

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The Precipitation of Si in AlCuSi Thin Films

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100070618 ◽

1973 ◽

Vol 31 ◽

pp. 34-35 ◽

Cited By ~ 1

Author(s):

R. M. Anderson

Keyword(s):

Electron Microscopy ◽

Thin Films ◽

Heat Treatment ◽

Solid Solution ◽

Integrated Circuit ◽

Copper Film ◽

Solution Concentration ◽

X Ray ◽

Silicon Thin Films ◽

Before And After

Aluminum-copper-silicon thin films have been considered as an interconnection metallurgy for integrated circuit applications. Various schemes have been proposed to incorporate small percent-ages of silicon into films that typically contain two to five percent copper. We undertook a study of the total effect of silicon on the aluminum copper film as revealed by transmission electron microscopy, scanning electron microscopy, x-ray diffraction and ion microprobe techniques as a function of the various deposition methods.X-ray investigations noted a change in solid solution concentration as a function of Si content before and after heat-treatment. The amount of solid solution in the Al increased with heat-treatment for films with ≥2% silicon and decreased for films <2% silicon.

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Narrow optical gap ferroelectric Bi2ZnTiO6 thin films deposited by RF sputtering

Journal of Materials Chemistry A ◽

10.1039/c8ta09425j ◽

2019 ◽

Vol 7 (17) ◽

pp. 10696-10701 ◽

Cited By ~ 4

Author(s):

Fábio G. Figueiras ◽

J. Ramiro A. Fernandes ◽

J. P. B. Silva ◽

Denis O. Alikin ◽

Eugénia C. Queirós ◽

...

Keyword(s):

Thin Films ◽

Rf Sputtering ◽

Optical Gap ◽

Ferroelectric Oxide

Thriving ferroelectric oxide Bi2ZnTiO6 thin films with a 1.48 eV optical gap.

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Phase transformation and preferred orientation in carboxylate derived ZrO2 thin films on silicon substates

Journal of Materials Research ◽

10.1557/jmr.1992.3065 ◽

1992 ◽

Vol 7 (11) ◽

pp. 3065-3071 ◽

Cited By ~ 4

Author(s):

Peir-Yung Chu ◽

Isabelle Campion ◽

Relva C. Buchanan

Keyword(s):

Thin Films ◽

Heat Treatment ◽

Phase Transformation ◽

Heating Rate ◽

Tetragonal Phase ◽

Monoclinic Phase ◽

Preferred Orientation ◽

Si Substrate ◽

Interfacial Diffusion ◽

Deposited Films

Phase transformation and preferred orientation in ZrO2 thin films, deposited on Si(111) and Si(100) substrates, and prepared by heat treatment from carboxylate solution precursors were investigated. The deposited films were amorphous below 450 °C, transforming gradually to the tetragonal and monoclinic phases on heating. The monoclinic phase developed from the tetragonal phase displacively, and exhibited a strong (111) preferred orientation at temperature as low as 550 °C. The degree of preferred orientation and the tetragonal-to-monoclinic phase transformation were controlled by heating rate, soak temperature, and time. Interfacial diffusion into the film from the Si substrate was negligible at 700 °C and became significant only at 900 °C, but for films thicker than 0.5 μm, overall preferred orientation exceeded 90%.

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