Effect of Multilayer Technology on Surface Properties of Diamond Coated Silicon Carbide with Surface Defects

2012 ◽  
Vol 217-219 ◽  
pp. 1318-1322
Author(s):  
Nai Chao Chen ◽  
Fang Hong Sun

Low surface roughness of diamond films is beneficial for the widespread applications in the mechanical field. But brittle ceramic substrate easily forms surface defects, which can be detrimental for surface properties of diamond films. In this work, multilayer technology combining conventional hot filament chemical vapor deposition (HFCVD) is proposed to eliminate the influence of surface defects in the substrate on diamond films. Then multilayer diamond films are deposited on silicon carbide with surface defects by alternately repeating the processes of diamond films growth and surface polishing. Each layer of multilayer diamond films is evaluated by field emission scanning electron microscope (FE-SEM), surface profilometer and Raman spectrum. The results show that multilayer technology is supposed to be a novel deposition method of improving the surface properties of diamond coated the silicon carbide ceramic substrate with surface defects.

2012 ◽  
Vol 499 ◽  
pp. 45-50 ◽  
Author(s):  
Xin Chang Wang ◽  
Bin Shen ◽  
Fang Hong Sun ◽  
Z.M. Zhang ◽  
H.S. Shen ◽  
...  

Silicon carbide (SiC) is a promising material for fabricating wire compacting dies due to its advantages of light weight and even high wear resistance over the tungsten carbide, which currently is the most popular material used to produce compacting dies. In present study, a layer of CVD diamond film is deposited on the interior-hole surface of compacting dies using the hot filament chemical vapor deposition (HFCVD) method, following by a surface polish process, aiming at further elongating the lifetime of compacting dies and improving the surface quality of produced wires. The characterization of both as-deposited and polished CVD diamond films is employed by scanning electron microscopy (SEM), surface profiler, Raman spectroscopy and X-ray diffraction (XRD) spectroscopy. Furthermore, the performance of as-fabricated CVD diamond coated compacting dies is examined in the real production process. The results exhibit that the as-deposited CVD diamond films are homogeneous and their surface finish is significantly smoothened after the surface polish process. As compared with the conventional compacting dies, the working lifetime of the diamond coated SiC compacting dies can be increased by a factor of above 15 and in the course of processing, copper stranded wires with high surface quality and uniform sectional area can be obtained.


Author(s):  
D.P. Malta ◽  
S.A. Willard ◽  
R.A. Rudder ◽  
G.C. Hudson ◽  
J.B. Posthill ◽  
...  

Semiconducting diamond films have the potential for use as a material in which to build active electronic devices capable of operating at high temperatures or in high radiation environments. A major goal of current device-related diamond research is to achieve a high quality epitaxial film on an inexpensive, readily available, non-native substrate. One step in the process of achieving this goal is understanding the nucleation and growth processes of diamond films on diamond substrates. Electron microscopy has already proven invaluable for assessing polycrystalline diamond films grown on nonnative surfaces.The quality of the grown diamond film depends on several factors, one of which is the quality of the diamond substrate. Substrates commercially available today have often been found to have scratched surfaces resulting from the polishing process (Fig. 1a). Electron beam-induced current (EBIC) imaging shows that electrically active sub-surface defects can be present to a large degree (Fig. 1c). Growth of homoepitaxial diamond films by rf plasma-enhanced chemical vapor deposition (PECVD) has been found to planarize the scratched substrate surface (Fig. 1b).


1996 ◽  
Vol 11 (7) ◽  
pp. 1765-1775 ◽  
Author(s):  
James M. Olson ◽  
Michael J. Dawes

Thin diamond film coated WC-Co cutting tool inserts were produced using arc-jet and hot-filament chemical vapor deposition. The diamond films were characterized using SEM, XRD, and Raman spectroscopy to examine crystal structure, fracture mode, thickness, crystalline orientation, diamond quality, and residual stress. The performance of the tools was evaluated by comparing the wear resistance of the materials to brazed polycrystalline diamond-tipped cutting tool inserts (PCD) while machining A390 aluminum (18% silicon). Results from the experiments carried out in this study suggest that the wear resistance of the thin diamond films is primarily related to the grain boundary strength, crystal orientation, and the density of microdefects in the diamond film.


2009 ◽  
Vol 1203 ◽  
Author(s):  
R. Vispute ◽  
Andrew Seiser ◽  
Geun Lee ◽  
Jaurette Dozier ◽  
Jeremy Feldman ◽  
...  

AbstractA compact and efficient hot filament chemical vapor deposition system has been designed for growing electronic-grade diamond and related materials. We report here the effect of substrate rotation on quality and uniformity of HFCVD diamond films on 2” wafers, using two to three filaments with power ranging from 500 to 600 Watt. Diamond films have been characterized using x-ray diffraction, Raman Spectroscopy, scanning electron microscopy and atomic force microscopy. Our results indicate that substrate rotation not only yields uniform films across the wafer, but crystallites grow larger than without sample rotation. Well-faceted microcrystals are observed for wafers rotated at 10 rpm. We also find that the Raman spectrum taken from various locations indicate no compositional variation in the diamond film and no significant Raman shift associated with intrinsic stresses. Results are discussed in the context of growth uniformity of diamond film to improve deposition efficiency for wafer-based electronic applications.


2019 ◽  
Vol 494 ◽  
pp. 401-411 ◽  
Author(s):  
Guangyu Yan ◽  
Yuhou Wu ◽  
Daniel Cristea ◽  
Lusheng Liu ◽  
Mircea Tierean ◽  
...  

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