Effect of R.F Power to the Properties of ZnO Thin Films Deposited by Magnetron Sputtering

2011 ◽  
Vol 364 ◽  
pp. 119-123 ◽  
Author(s):  
Nor Diyana Md Sin ◽  
M.Z. Musa ◽  
Mohamad Rusop
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Structural Properties ◽  
Zno Thin Films ◽  
X Ray Diffraction ◽  
Absorption Properties ◽  
X Ray ◽  
Atomic Force ◽  
Current Voltage ◽  
Pure Argon Atmosphere

The effect of radio frequency (R.F) power to the properties of zinc oxide (ZnO) thin films deposited by magnetron sputtering is presented. This project has been focused on electrical, optical and structural properties of ZnO thin films. The effect of variation R.F power at 100 watt ~ 400 watt on the ZnO thin films has been investigated. The thin films were examined using current-voltage (I-V) measurement, UV-Vis-NIR spectrophotometer, x-ray diffraction (XRD) and atomic force microscope (AFM). ZnO thin films were prepared at room temperature in pure argon atmosphere by a R.F magnetron sputtering using ZnO target. I-V measurement indicates that at 300 watt R.F power show the highest conductivity. All films have showed high UV absorption properties using UV-VIS spectrophotometer (JASCO 670). Highly oriented ZnO thin films [002] direction was obtained by using Rigaku Ultima IV. The root means square (rms) roughness for ZnO thin film were about (<2nm) was measured using AFM (Park System XE-100). Keywords-ZnO thin films, R.F power, electrical properties, optical properties, structural properties

Microstructure and Mechanical Properties of Chromium Carbide Coatings Deposited by Magnetron Sputtering Technique

2019 ◽  
Vol 397 ◽  
pp. 118-124
Author(s):  
Linda Aissani ◽  
Khaoula Rahmouni ◽  
Laala Guelani ◽  
Mourad Zaabat ◽  
Akram Alhussein
Keyword(s):  
Thin Films ◽  
Mechanical Properties ◽  
Magnetron Sputtering ◽  
Structural Properties ◽  
Annealing Temperature ◽  
Diffusion Mechanism ◽  
X Ray Diffraction ◽  
Chromium Carbides ◽  
X Ray ◽  
Mechanical And Structural Properties

From the hard and anti-corrosions coatings, we found the chromium carbides, these components were discovered by large studies; like thin films since years ago. They were pointed a good quality for the protection of steel, because of their thermal and mechanical properties for this reason, it was used in many fields for protection. Plus: their hardness and their important function in mechanical coatings. The aim of this work joins a study of the effect of the thermal treatment on mechanical and structural properties of the Cr/steel system. Thin films were deposited by cathodic magnetron sputtering on the steel substrates of 100C6, contain 1% wt of carbon. Samples were annealing in vacuum temperature interval between 700 to 1000 °C since 45 min, it forms the chromium carbides. Then pieces are characterising by X-ray diffraction, X-ray microanalysis and scanning electron microscopy. Mechanical properties are analysing by Vickers test. The X-ray diffraction analyse point the formation of the Cr7C3, Cr23C6 carbides at 900°C; they transformed to ternary carbides in a highest temperature, but the Cr3C2 doesn’t appear. The X-ray microanalysis shows the diffusion mechanism between the chromium film and the steel sample; from the variation of: Cr, Fe, C, O elements concentration with the change of annealing temperature. The variation of annealing temperature shows a clean improvement in mechanical and structural properties, like the adhesion and the micro-hardness.

Structural properties of low-temperature grown ZnO thin films determined by X-ray diffraction and X-ray absorption spectroscopy

2011 ◽  
Vol 519 (13) ◽  
pp. 4366-4370 ◽  
Author(s):  
Chung-Jong Yu ◽  
Nark-Eon Sung ◽  
Han-Koo Lee ◽  
Hyun-Joon Shin ◽  
Young-Duck Yun ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Structural Properties ◽  
Absorption Spectroscopy ◽  
Zno Thin Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
X Ray Absorption

Effect of RF Power on the Formation and Morphology Evolution of ZnO Nanostructured Thin Films

2012 ◽  
Vol 576 ◽  
pp. 577-581 ◽  
Author(s):  
N.D.M. Sin ◽  
Mohamad Hafiz Mamat ◽  
Mohamed Zahidi Musa ◽  
S. Ahmad ◽  
A. Abdul Aziz ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Structural Properties ◽  
Zno Thin Films ◽  
Morphology Evolution ◽  
Zno Thin Film ◽  
Rf Power ◽  
Nanostructured Thin Films ◽  
Atomic Force ◽  
Current Voltage

The effect of RF power on the formation and morphology evolution of ZnO nanostructured thin films deposited by magnetron sputtering are presented. This project focused on electrical, optical and structural properties of ZnO thin films. The effect of variation of RF power at 50 watt-250 watt at 200 °C on glass substrate of the ZnO thin films was investigated. The thin films were examined for electrical properties and optical properties using two point probe current-voltage (I-V) measurement (Keithley 2400) and UV-Vis-NIR spectrophotometer (JASCO 670) respectively. The structural properties were characterized using field emission scanning electron microscope (FESEM) (JEOL JSM 7600F) and atomic force microscope (AFM) (Park System XE-100). The IV measurement indicated that at RF power 200 watt the conductivity of ZnO thin film show the highest. All films show high UV absorption properties using UV-VIS spectrophotometer (JASCO 670). The root means square (rms) roughness for ZnO thin film were about 4 nm measured using AFM. The image form FESEM observed that transformation of structure size started to change as the RF power increase.

scholarly journals Study of Structural Properties of Annealed Cdo and Zno Thin Films

2017 ◽  
Vol 14 (2) ◽  
pp. 164-168
Author(s):  
Kishor Hurde ◽  
A. B. Lad
Keyword(s):  
Thin Films ◽  
Structural Properties ◽  
Thermal Annealing ◽  
Diffraction Data ◽  
Zno Thin Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transparent Conducting ◽  
Resistance To Oxidation

The CdO and ZnO are n- type semiconductors are transparent conducting in nature, inexpensive, mechanically stable and highly resistance to oxidation. In the present work these films have been obtained from thermal annealing of chemically deposited CdS and ZnS thin films. The structural properties of chemically deposited CdS and ZnS thin films and thermally annealed CdO and ZnO thin films have been studied. From x-ray diffraction data it is observed that annealing of the thin films at a particular temperature enhance the structural properties.

scholarly journals Оптические и фотоэлектрические свойства тонких пленок GaS и гетероструктуры GaS/InSe

2019 ◽  
Vol 126 (5) ◽  
pp. 538
Author(s):  
А.Г. Гусейнов ◽  
В.М. Салманов ◽  
Р.М. Мамедов ◽  
А.А. Салманова ◽  
Ф.М. Ахмедова
Keyword(s):  
Thin Films ◽  
Xrd Analysis ◽  
X Ray Diffraction ◽  
Silar Method ◽  
X Ray ◽  
Force Microscopy ◽  
Photoelectric Properties ◽  
Atomic Force ◽  
Current Voltage ◽  
Luminescence Characteristics

AbstractGaS thin films have been grown by the SILAR method, their structures have been analyzed, and their optical and photoelectric properties have been investigated. The internal structure of the samples obtained have been studied using X-ray diffraction (XRD) analysis, atomic force microscopy (AFM), energy-dispersive X-ray (EDX) spectroscopy, and scanning electron microscopy (SEM). The GaS band gap has been determined from the absorption spectrum. p -GaS/ n -InSe heterojunctions have been formed on the basis of GaS crystals and InSe thin films. Current–voltage, optical, photoelectric, and luminescence characteristics of p -GaS/ n -InSe heterojunctions have been experimentally investigated.

scholarly journals Characteristics of Ag Doped ZnO Thin Films Prepared by Sputtering Method

2019 ◽  
Vol 35 (4) ◽  
Author(s):  
Tran Thi Ngoc Anh ◽  
Tran Thi Ha ◽  
Nguyen Viet Tuyen ◽  
Pham Nguyen Hai
Keyword(s):  
Thin Films ◽  
Bulk Sample ◽  
Zno Thin Films ◽  
X Ray Diffraction ◽  
Raman Scattering Spectroscopy ◽  
X Ray ◽  
Atomic Force ◽  
Method Effect ◽  
Doped Zno ◽  
Zno Crystal

This paper presents results of preparation of Ag doped ZnO bulk sample by solid state reaction and Ag doped ZnO thin films by sputtering method. Effect of doping concentration (1, 2 and 4%) on the properties of the thin films was investigated. Various methods were utilized to investigate characteristics of the samples: X-ray diffraction, Raman scattering spectroscopy, photoluminescence, energy dispersive X-Ray spectroscopy, scanning electron microscopy, atomic force microscope, absorption spectroscopy and Hall measurement. The results show that Ag diffused into ZnO crystal lattice after heat treatment at 1200oC. As-prepared thin film samples exhibit low resistivity in the order of 10-3Ω.cm. The film doped with 2% Ag shows the lowest resistivity of 1.8´10-3Ω.cm which is potential for making transparent electrodes in optoelectronics.

ON THE ELECTRONIC TRANSPORT MECHANISM IN MAGNETRON-SPUTTERED POLYCRYSTALLINE ZnO THIN FILMS

2010 ◽  
Vol 24 (31) ◽  
pp. 6079-6090 ◽  
Author(s):  
I. I. RUSU ◽  
M. SMIRNOV ◽  
G. G. RUSU ◽  
A. P. RAMBU ◽  
G. I. RUSU
Keyword(s):  
Thin Films ◽  
Electronic Transport ◽  
Hexagonal Structure ◽  
Zno Thin Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Glass Substrates ◽  
Atomic Force ◽  
Crystallite Boundary

Zinc oxide ( ZnO ) thin films were deposited onto glass substrates by d.c. magnetron sputtering. The structural analysis, by X-ray diffraction and atomic force microscopy, indicate that the studied films are polycrystalline and have a wurtzite (hexagonal) structure. The film crystallites are preferentially oriented with (002) planes parallel to the substrates. The mechanism of electronic transport is explained in terms of Seto's model elaborated for polycrystalline semiconducting films (crystallite boundary trapping theory). Some parameters of used model (impurity concentration, density and energy of the trapping states, etc.) have been calculated. The optical bandgap (Eg0 = 3.28–3.37 eV ) was determined from absorption spectra.

The Properties of the Al-Doped ZnO Thin Film Prepared by Magnetron Sputtering

2013 ◽  
Vol 341-342 ◽  
pp. 237-241
Author(s):  
Wei Hua Huang ◽  
Guo Wen Zhong ◽  
Li Ping Su ◽  
Tan Li
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Band Gap Energy ◽  
Zno Thin Films ◽  
X Ray Diffraction ◽  
Sem Images ◽  
Si Substrates ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Doped Zno

Pure and Al-doped ZnO thin films were deposited by radio frequency magnetron sputtering at room temperature on n-(100) Si, fused quartz and Pt/Ti/SiO2/Si substrates. Structural, optical and electrical properties of the prepared thin films had been characterized. The X-ray diffraction results indicated that all the films had (002) preferential orientation. The AFM and SEM images showed that the surface of the films was smooth, crack-free and pore-free, the interface between the film and the substrate was sharp and distinct. From the transmission data the band gap energy Eg of the film increased when doped with Al2O3, and the transparent was still high (above 80%). The current voltage characteristics indicated that doping with Al2O3, the leakage current of ZnO thin films increased rapidly and the films acted as a conductive.

Electrical Properties Dependence on Substrate Temperature of Sputtered ZnO Nanoparticles Thin Films on Teflon Substrates

2013 ◽  
Vol 795 ◽  
pp. 403-406 ◽  
Author(s):  
Nur Sa’adah Muhamad Sauki ◽  
Sukreen Hana Herman ◽  
Mohd Hanafi Ani ◽  
Mohamad Rusop
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Substrate Temperature ◽  
Rf Magnetron Sputtering ◽  
Zno Thin Films ◽  
Zno Thin Film ◽  
X Ray Diffraction ◽  
X Ray ◽  
Current Voltage

Zinc oxide (ZnO) thin films were deposited on teflon substrates by RF magnetron sputtering at different substrate temperature. The effect of substrate temperature on ZnO thin films electrical and structural properties were examined using current-voltage (I-V) measurement, and x-ray diffraction (XRD) It was found that the electrical conductivity and resistivity of the ZnO thin film deposited at 40°C was the highest and lowest intensity accordingly. This was supported by the crystalline quality of the films from the x-ray diffraction (XRD) results. The XRD pattern showed that the ZnO thin film deposited at 40°C has the highest intensity with the narrowest full-width-at-half-maximum indicating that the film has the highest quality compared to other thin film.

Synthesis and Morphology of ZnO Films Prepared by Magnetron Sputtering

2013 ◽  
Vol 307 ◽  
pp. 333-336
Author(s):  
Shiuh Chuan Her ◽  
Tsung Chi Chi
Keyword(s):  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Rf Magnetron Sputtering ◽  
Zno Thin Films ◽  
Zno Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Xrd Patterns

Zinc oxide (ZnO) thin films were deposited on glass substrate by Radio frequency (RF) magnetron sputtering. The effect of substrate temperature on the microstructure of the ZnO films has been investigated. Crystal structure and surface morphology of the films were examined by X-ray diffraction (XRD) and atomic force microscopy (AFM). XRD patterns and AFM images show that the crystallinity and grain size are increasing with the increase of substrate temperature.

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