High-Voltage Large-Current 4H-SiC JBS Diodes

2015 ◽  
Vol 713-715 ◽  
pp. 1023-1026
Author(s):  
Yong Hong Tao ◽  
Song Bai ◽  
Run Hua Huang ◽  
Gang Chen ◽  
Ling Wang ◽  
...  
Keyword(s):  
High Voltage ◽  
Contact Area ◽  
Schottky Contact ◽  
Edge Termination ◽  
Forward Current ◽  
Large Current ◽  
Blocking Voltage

3.3kV and 4.5kV 4H-SiC junction barrier Schottky (JBS) diodes with floating guard rings edge termination have been fabricated. The 3.3kV device with 33μm 2.7E15 cm-3epilayer and 5.5Х5.5mm2schottky contact area has a blocking voltage (Vb) of 3.9 kV and a specificon-resistance (Ron) of 10.5 mΩ.cm2, with a forward current measured up to 50A at VF=3.0V. The 4.5kV device with 50 um 1.2E15 cm-3epilayer and 5.5Х5.5mm2schottky contact area has a blocking voltage (Vb) of 5.1 kV and a specificon-resistance (Ron) of 22.9 mΩ.cm2, with a forward current of 30A at VF=3.7V.

5 kV, 9.5 A SiC JBS Diodes with Non-Uniform Guard Ring Edge Termination for High Power Switching Application

2008 ◽  
Vol 600-603 ◽  
pp. 947-950 ◽  
Author(s):  
Jun Hu ◽  
Larry X. Li ◽  
Petre Alexandrov ◽  
Xiao Hui Wang ◽  
Jian Hui Zhao
Keyword(s):  
Energy Loss ◽  
High Power ◽  
Voltage Drop ◽  
Guard Ring ◽  
Power Switching ◽  
Edge Termination ◽  
Forward Current ◽  
Blocking Voltage ◽  
Bus Voltage ◽  
Ac Induction Motor

4H-SiC Junction Barrier Diodes (JBS) diodes were designed, fabricated and tested. The JBS diodes based on a 45μm thick, 1.4×1015cm-3 doped drift layer with multiple non-uniform spacing guard ring edge termination showed a blocking voltage of over 5kV. The 5kV JBS diode has a forward current density of 108A/cm2 at 3.5V and a specific on resistance (RSP_ON) of 25.2mW·cm2, which is very close to the theoretical RSP_ON of 23.3mΩ·cm2. DC I-V measurement of packaged JBS diodes showed a forward current of 100A at a voltage drop of 4.3V. A half-bridge inverter with a bus voltage up to 2.5kV was used to characterize the high power switching performance of SiC JBS diodes. A large inductance load of 1mH was used to simulate the load of a high power AC induction motor. Compared to a Si PIN diode module, the SiC JBS package reduces diode turn-off energy loss by 30% and Si IGBT turn-on energy loss by 21% at room temperature.

Simulation, Fabrication and Characterization of 4500V 4H-SiC Normally-Off VJFET

2013 ◽  
Vol 347-350 ◽  
pp. 1641-1645
Author(s):  
Run Hua Huang ◽  
Gang Chen ◽  
Song Bai ◽  
Rui Li ◽  
Yun Li ◽  
...  
Keyword(s):  
High Voltage ◽  
Current Density ◽  
Drain Current ◽  
Gate Bias ◽  
Edge Termination ◽  
Blocking Voltage ◽  
Drain Bias ◽  
Fabrication And Characterization ◽  
A Current

Simulation, Fabrication and characteristics of high voltage, normally-off JFETs in 4H-SiC are presented. The devices were built on ND= 1.01015 cm-3 doped 50μm thick n-type epilayer grown on a n+ 4H-SiC. Parameters of edge termination have been optimized by simulations. Its blocking voltage exceeds 4500V at gate bias VG = -6V and forward drain current is in excess of 3A at gate bias VG = 3V and drain bias VD = 5V corresponding a current density of 80A/cm2.

Process Tolerant Single Photolithography/Implantation 120-Zone Junction Termination Extension

2013 ◽  
Vol 740-742 ◽  
pp. 855-858 ◽  
Author(s):  
Victor Veliadis ◽  
M. Snook ◽  
H. Hearne ◽  
B. Nechay ◽  
S. Woodruff ◽  
...  
Keyword(s):  
High Voltage ◽  
Cycle Time ◽  
Implantation Dose ◽  
Significant Loss ◽  
Edge Termination ◽  
Blocking Voltage ◽  
Process Tolerance ◽  
Process Complexity

The multiple-zone junction termination extension (MJTE) is a widely used SiC edge termination technique that reduces sensitivity to implantation dose variations. It is typically implemented in multiple lithography and implantation events. To reduce process complexity, cycle time, and cost, a single photolithography/implantation (P/I) MJTE technique was developed and diodes with 3-zone and 120-zone JTEs were fabricated on the same wafer. Here, the process tolerance of the single (P/I) MJTE technique is evaluated by performing CCD monitored blocking voltage measurements on diodes from the same wafer with the 3-zone and 120-zone single (P/I) JTE. The 3-zone JTE diodes exhibited catastrophic localized avalanches at the interface between the 2nd and 3rd zones due to abrupt zone transitions. Diodes with the smooth transitioning 120-zone JTE exhibited no CCD detectable avalanches in their JTE regions up to the testing limit of 12 kV. Under thick dielectric (deposited for on-wafer diode interconnection), diodes with the single P/I 3-zone JTE failed due to significant loss of high-voltage capability, while their 120-zone JTE diode counterparts were minimally affected. Overall, the single (P/I) 120-zone JTE provides a process-tolerant and robust single P/I edge termination at no additional fabrication labor.

Current Distribution in the Various Functional Areas of a 600V SiC MPS Diode in Forward Operation

2012 ◽  
Vol 717-720 ◽  
pp. 929-932 ◽  
Author(s):  
Roland Rupp ◽  
Rolf Gerlach ◽  
Andre Kabakow
Keyword(s):  
Current Distribution ◽  
Minority Carrier ◽  
Light Emission ◽  
Schottky Contact ◽  
Carrier Injection ◽  
Edge Termination ◽  
Forward Current ◽  
Current Densities ◽  
Emission Microscopy ◽  
Functional Areas

The forward current distribution in SiC 600V merged pn-Schottky (MPS) diodes is visualized with the help of emission microscopy at various current densities. It is shown how the light emission develops with increasing current densities and extends from the Schottky contact areas into the pn junction areas. Large p+-regions e.g. in the edge termination contribute first by minority carrier injection, whereas the smaller p+ hexagonal cells and the p+ grid follow subsequently.

Edge Termination With Enhanced Field-Limiting Rings Insensitive to Surface Charge for High-Voltage SiC Power Devices

2020 ◽  
Vol 67 (7) ◽  
pp. 2850-2853
Author(s):  
Takashi Hirao ◽  
Hidekatsu Onose ◽  
Kan Yasui ◽  
Mutsuhiro Mori
Keyword(s):  
Surface Charge ◽  
High Voltage ◽  
Power Devices ◽  
Edge Termination

Effect of Design Variations and N2O Annealing on 1.7kV 4H-SiC Diodes

2018 ◽  
Vol 924 ◽  
pp. 428-431 ◽  
Author(s):  
Yogesh K. Sharma ◽  
Hua Ping Jiang ◽  
C. Zheng ◽  
X. Dai ◽  
Ian Deviny
Keyword(s):  
Nitrous Oxide ◽  
Active Region ◽  
Beneficial Effect ◽  
Schottky Diodes ◽  
Process Variations ◽  
Electrical Performance ◽  
Edge Termination ◽  
Blocking Voltage ◽  
Processing Step

In this work we have studied the influence of design and process variations on electrical performance of 1.7 kV 4H-SiC Schottky diodes. Diodes with two variations in their active region design namely, stripe design and segment design, were fabricated in this study. Field Limiting Rings (FLRs) or Junction Termination Extension (JTE) were used as edge termination design to achieve a blocking voltage of 1.7 kV. In addition to these designs an extra processing step of nitrous oxide (N2O) annealing was performed on some of the diodes. The study has shown that there is no extra beneficial effect of nitrous oxide annealing on device characteristics.

High Voltage Silicon Carbide Devices

1998 ◽  
Vol 512 ◽  
Author(s):  
B. Jayant Baliga
Keyword(s):  
Silicon Carbide ◽  
Breakdown Voltage ◽  
High Voltage ◽  
Impact Ionization ◽  
Voltage Drop ◽  
Schottky Diodes ◽  
Inversion Layer ◽  
Drift Region ◽  
Edge Termination ◽  
Silicon Devices

ABSTRACTProgress made in the development of high performance power rectifiers and switches from silicon carbide are reviewed with emphasis on approaching the 100-fold reduction in the specific on-resistance of the drift region when compared with silicon devices with the same breakdown voltage. The highlights are: (a) Recently completed measurements of impact ionization coefficients in SiC indicate an even higher Baliga's figure of merit than projected earlier. (b) The commonly reported negative temperature co-efficient for breakdown voltage in SiC devices has been shown to arise at defects, allaying concerns that this may be intrinsic to the material. (c) Based upon fundamental considerations, it has been found that Schottky rectifiers offer superior on-state voltage drop than P-i-N rectifiers for reverse blocking voltages below 3000 volts. (d) Nearly ideal breakdown voltage has been experimentally obtained for Schottky diodes using an argon implanted edge termination. (e) Planar ion-implanted junctions have been successfully fabricated using oxide as a mask with high breakdown voltage and low leakage currents by using a filed plate edge termination. (f) High inversion layer mobility has been experimentally demonstrated on both 6H and 4H-SiC by using a deposited oxide layer as gate dielectric. (g) A novel, high-voltage, normally-off, accumulation-channel, MOSFET has been proposed and demonstrated with 50x lower specific on-resistance than silicon devices in spite of using logic-level gate drive voltages. These results indicate that SiC based power devices could become commercially viable in the 21st century if cost barriers can be overcome.

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