Characterization of Difference Size of IDE Pattern for Formaldehyde Detection Sensor

2015 ◽  
Vol 754-755 ◽  
pp. 917-922 ◽  
Author(s):  
M. Zaki ◽  
Uda Hashim ◽  
Mohd Khairuddin Md Arshad ◽  
M.F.M. Fathil ◽  
A.H. Azman ◽  
...  
Keyword(s):  
Gas Sensing ◽  
Low Cost ◽  
Electrical Characterization ◽  
Gas Detection ◽  
Si Substrate ◽  
Hard Mask ◽  
Large Size ◽  
Mask Design ◽  
The Ideal

This paper studies the effect of different gap sizes of IDE pattern on the surface morphology and electrical properties for the formaldehyde detection sensor. Two types of IDE chrome mask are designed to determine the ideal IDE pattern for formaldehyde gas detection by using conventional lithography. In the first method, IDE is transferred onto SiO2layer. In order to ensure that the perfect pattern with minimum defect structure is obtained, the process parameters should be optimized and controlled. In the second method, the aluminium is deposited directly on SiO2/Si substrate by using IDE hard mask design plate. The fabricated IDE pattern is further validated through morphological and electrical characterization. The average gap size of IDE sensor is approximately 100 μm and 400 μm for IDE chrome and IDE hard mask respectively. The latter method is preferable since for formaldehyde gas sensing large size is needed and moreover the process is simple and requires low cost. Characterization of difference IDE pattern is demonstrated by various measurements.

Structural and electrical characterization of AIN thin films obtained by nitridation of Al/Si substrate

1999 ◽  
Vol 28 (3) ◽  
pp. 225-227 ◽  
Author(s):  
Jipo Huang ◽  
Lianwei Wang ◽  
Qinwo Shen ◽  
Chenglu Lin ◽  
Mikael Östling
Keyword(s):  
Thin Films ◽  
Electrical Characterization ◽  
Si Substrate

scholarly journals Low cost, p-ZnO/n-Si, rectifying, nano heterojunction diode: Fabrication and electrical characterization

2014 ◽  
Vol 5 ◽  
pp. 2216-2221 ◽  
Author(s):  
Vinay Kabra ◽  
Lubna Aamir ◽  
M M Malik
Keyword(s):  
Zno Nanoparticles ◽  
Low Cost ◽  
Electrical Characterization ◽  
Hall Effect Measurement ◽  
Dip Coating ◽  
Si Substrate ◽  
Electronic Circuitry ◽  
Uv Illumination ◽  
P Type ◽  
Dip Coating Technique

A low cost, highly rectifying, nano heterojunction (p-ZnO/n-Si) diode was fabricated using solution-processed, p-type, ZnO nanoparticles and an n-type Si substrate. p-type ZnO nanoparticles were synthesized using a chemical synthesis route and characterized by XRD and a Hall effect measurement system. The device was fabricated by forming thin film of synthesized p-ZnO nanoparticles on an n-Si substrate using a dip coating technique. The device was then characterized by current–voltage (I–V) and capacitance–voltage (C–V) measurements. The effect of UV illumination on the I–V characteristics was also explored and indicated the formation of a highly rectifying, nano heterojunction with a rectification ratio of 101 at 3 V, which increased nearly 2.5 times (232 at 3 V) under UV illumination. However, the cut-in voltage decreases from 1.5 V to 0.9 V under UV illumination. The fabricated device could be used in switches, rectifiers, clipper and clamper circuits, BJTs, MOSFETs and other electronic circuitry.

scholarly journals Application of Bayesian Super-Resolution to Spectroscopic Data for Precise Characterization of Spectral Peak Shape

2022 ◽  
Author(s):  
Kota Tsujimori ◽  
Jun Hirotani ◽  
Shunta Harada
Keyword(s):  
Raman Spectra ◽  
Spectroscopic Data ◽  
Super Resolution ◽  
Spectral Peak ◽  
Peak Shape ◽  
Si Substrate ◽  
Precise Characterization ◽  
Data Points ◽  
The Ideal

AbstractThe number of data points of digitally recorded spectra have been limited by the number of multichannel detectors employed, which sometimes impedes the precise characterization of spectral peak shape. Here we describe a methodology to increase the number of data points as well as the signal-to-noise (S/N) ratio by applying Bayesian super-resolution in the analysis of spectroscopic data. In our present method, first, the hyperparameters for the Bayesian super-resolution are determined by a virtual experiment imitating actual experimental data, and the precision of the super-resolution reconstruction is confirmed by the calculation of errors from the ideal values. For validation of the super-resolution reconstruction of spectroscopic data, we applied this method to the analysis of Raman spectra. From 200 Raman spectra of a reference Si substrate with a data interval of about 0.8 cm−1, super-resolution reconstruction with a data interval of 0.01 cm−1 was successfully achieved with the promised precision. From the super-resolution spectrum, the Raman scattering peak of the reference Si substrate was estimated as 520.55 (+0.12, −0.09) cm−1, which is comparable to the precisely determined value reported in previous works. The present methodology can be applied to various kinds of spectroscopic analysis, leading to increased precision in the analysis of spectroscopic data and the ability to detect slight differences in spectral peak positions and shapes.

scholarly journals Low-Cost Test and Characterization Platform for Memristors

2020 ◽  
Author(s):  
Lyle Jones
Keyword(s):  
Integrated Circuits ◽  
Low Cost ◽  
Electrical Characterization ◽  
Ease Of Use ◽  
Voltage Range ◽  
Threshold Voltages ◽  
Hands On ◽  
Test Platform ◽  
Software And Hardware

The electrical Testing and Characterization of the devices built under research conditions on silicon wafers, diced wafers, or package parts have hampered research since the beginning of integrated circuits. The challenges of performing electrical characterization on devices are to acquire useful and accurate data, the ease of use of the test platform, the portability of the test equipment, the ability to automate quickly, to allow modifications to the platform, the ability to change the configuration of the Device Under Test (DUT) or the Memristor Based Design (MBD), and to do this within budget. The devices that this research is focused on are memristors with unique test challenges. Some of the tests performed on memristors are Voltage sweeps, pulsing of Voltages, and threshold Voltages. Standard methods of testing memristors usually require hands-on experience, multiple bulky work stations, and hours of training. This work reports a novel, low-cost, portable test and characterization platform for many types of memristors with a voltage range from -10V to +10V, which is portable, low-cost, built with off-the-shelf components, and with configurability through software and hardware. To demonstrate the performance of the platform, the platform was able to take a virgin memristor from “forming” to operation voltages, and then incrementally change resistances by Voltage Pulsing. The platform within this work allows the researcher flexibility in electrical characterization by being able to accept many memristor types and MBDs, and applying environmental conditions to the MBD, with this flexibility of the platform the productivity of the researcher will increase.

scholarly journals A New Low Cost Current Measurement Circuit with Temperature Compensation

2020 ◽  
Vol 15 (3) ◽  
pp. 1-5
Author(s):  
Antonio Carlos da Costa Telles ◽  
Jair Lins de Emeri ◽  
Saulo Finco ◽  
Luis Eduardo Seixas
Keyword(s):  
Temperature Compensation ◽  
Field Effect Transistors ◽  
Low Cost ◽  
Electrical Characterization ◽  
Current Gain ◽  
Bipolar Junction Transistors ◽  
Exponential Relationship ◽  
Electrical Currents ◽  
Commercial Off The Shelf

The electrical characterization of semiconductors devices, when submitted to ionizing radiation should be done in a large range of currents; however, the instrumentation with this ability is very expensive. This work proposes a low-cost circuit using commercial off-the-shelf components (COTS) that enables the measurement of electrical currents in the order of pA range. The circuit presents an output current that is an amplified version of the current to be measured, using the exponential relationship between currents and voltages in Bipolar Junction Transistors (BJTs) and Metal Oxide Silicon Field Effect Transistors (MOSFETs) when operating in the weak inversion region. Furthermore, a block was introduced in order to compensate the gain’s temperature dependence. The results showed that the operating range for the current that will be measured was more than seven decades using BJTs and five decades by using MOSFETs with a high linearity. The circuit version using MOSFETs was able to measure currents as low as 100 fA. The current gain has also good linearity for over five decades. This circuit has a stable behavior for the range of 20 °C to 40 °C, because of the temperature compensation block.

A compact low-cost test equipment for thermal and electrical characterization of integrated circuits

Measurement ◽  
2009 ◽  
Vol 42 (2) ◽  
pp. 281-289 ◽  
Author(s):  
Alessandro Cabrini ◽  
Laura Gobbi ◽  
Davide Baderna ◽  
Guido Torelli
Keyword(s):  
Integrated Circuits ◽  
Low Cost ◽  
Electrical Characterization ◽  
Test Equipment

Epitaxy of Aluminium Films on Semiconductors by Ionized Cluster Beam

1984 ◽  
Vol 37 ◽  
Author(s):  
I. Yamada ◽  
C. J. Palmstrøm ◽  
E. Kennedy ◽  
J. W. Mayer ◽  
H. Inokawa ◽  
...  
Keyword(s):  
Heat Treatment ◽  
Room Temperature ◽  
Depth Profiling ◽  
Electrical Characterization ◽  
Life Time ◽  
Cluster Beam ◽  
Clean Surface ◽  
Si Substrate ◽  
Thermal Stability Of

AbstractEpitaxial Al films have been deposited onto the clean surface of single-crystal Si by ionized cluster beam (ICB) at room temperature. Thermal stability of the film has been examined by SEM, AES depth profiling, ion backscat. tering/channeling, and electrical characterization of the Al-Si interface. It was found that the ICB Al film on Si substrate was remarkably stable up to 550°C although pure Al was used. Alloy penetration at the interface, shift of barrier height, degradation of crystalline quality and development of annealing hillocks on the surface were not observed after the heat treatment. Extremely long electromigration life time was also confirmed. Epitaxial growth on GaAs(100) substrate was attempted and preliminary results are given.

scholarly journals SYNTHESIS AND CHARACTERIZATION OF Co3O4 POWDERS FOR HUMIDITY SENSING

2012 ◽  
Vol 06 ◽  
pp. 197-202 ◽  
Author(s):  
P. N. SHELKE ◽  
Y. B. KHOLLAM ◽  
P. N. PABREKAR ◽  
P. S. MORE ◽  
A. M. DATIR ◽  
...  
Keyword(s):  
Gas Sensing ◽  
Wide Spectrum ◽  
Pollution Monitoring ◽  
Gas Detection ◽  
X Ray Diffraction ◽  
Gaseous Species ◽  
Humidity Sensing ◽  
Prepared Powder ◽  
Naoh Solution

In last few decades, great deal of research efforts were directed towards the development of miniaturized gas-sensing devices, particularly for toxic gas detection and for pollution monitoring. Though various techniques are available for gas detection, solid state metal oxides offer wide spectrum of materials with their high sensitivities for the detection of different gaseous species. In this paper, we report the humidity sensing behavior of cobalt oxide ( Co 3 O 4) pellets. The Co 3 O 4 powder was prepared from the precipitation of CoSO 4 using NaOH solution. This as-prepared powder was heated at 600 °C for 2hr. The as-prepared powder was characterized by using X-ray diffraction (XRD) and scanning electron microscopy (SEM). The humidity sensing behavior of Co 3 O 4 pellets (wt. ~ 0.5 gm, diameter ~ 10 mm) was noted by using home-built static gas sensing system. The characterization studies showed the high material purity and single phase Co 3 O 4 with cubic spinel symmetry in the as-prepared particles of resultant powders. The humidity sensing characteristics of Co 3 O 4 pellets were found to be good. The recovery time (~ 20 sec) was found to be small as compared to its response time (~ 60 sec).

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