Epitaxy of Aluminium Films on Semiconductors by Ionized Cluster Beam

1984 ◽  
Vol 37 ◽  
Author(s):  
I. Yamada ◽  
C. J. Palmstrøm ◽  
E. Kennedy ◽  
J. W. Mayer ◽  
H. Inokawa ◽  
...  
Keyword(s):  
Heat Treatment ◽  
Room Temperature ◽  
Depth Profiling ◽  
Electrical Characterization ◽  
Life Time ◽  
Cluster Beam ◽  
Clean Surface ◽  
Si Substrate ◽  
Thermal Stability Of

AbstractEpitaxial Al films have been deposited onto the clean surface of single-crystal Si by ionized cluster beam (ICB) at room temperature. Thermal stability of the film has been examined by SEM, AES depth profiling, ion backscat. tering/channeling, and electrical characterization of the Al-Si interface. It was found that the ICB Al film on Si substrate was remarkably stable up to 550°C although pure Al was used. Alloy penetration at the interface, shift of barrier height, degradation of crystalline quality and development of annealing hillocks on the surface were not observed after the heat treatment. Extremely long electromigration life time was also confirmed. Epitaxial growth on GaAs(100) substrate was attempted and preliminary results are given.

Characterization of the order-annealing response of nanostructured iron-palladium based ferromagnetic thin-films

2001 ◽  
Vol 703 ◽  
Author(s):  
Huiping Xu ◽  
Adam T. Wise ◽  
Timothy J. Klemmer ◽  
Jörg M. K. Wiezorek
Keyword(s):  
Thin Films ◽  
Grain Growth ◽  
Room Temperature ◽  
Si Substrate ◽  
Ferromagnetic Thin Films ◽  
Precipitation Reactions ◽  
Post Deposition ◽  
Xrd And Tem ◽  
Iron Palladium

ABSTRACTA combination of XRD and TEM techniques have been used to characterize the response of room temperature magnetron sputtered Fe-Pd thin films on Si-susbtrates to post-deposition order-annealing at temperatures between 400-500°C. Deposition produced the disordered Fe-Pd phase with (111)-twinned grains approximately 18nm in size. Ordering occurred for annealing at 450°C and 500°C after 1.8ks, accompanied by grain growth (40-70nm). The ordered FePd grains contained (111)-twins rather than {101}-twins typical of bulk ordered FePd. The metallic overlayers and underlayers selected here produced detrimental dissolution (Pt into Fe-Pd phases) and precipitation reactions between Pd and the Si substrate.

Structural and Electrical Characterization of Si-Implanted TiN as a Diffusion Barrier for Cu Metallization

1995 ◽  
Vol 391 ◽  
Author(s):  
W.F. Mcarthur ◽  
K.M. Ring ◽  
K.L. Kavanagh
Keyword(s):  
Leakage Current ◽  
Diffusion Barrier ◽  
Depth Profiling ◽  
Electrical Characterization ◽  
Implantation Dose ◽  
Cu Metallization ◽  
Reverse Leakage Current ◽  
Transmission Electron ◽  
Current Voltage

AbstractThe feasibility of Si-implanted TiN as a diffusion barrier between Cu and Si was investigated. Barrier effectiveness was evaluated via reverse leakage current of Cu/TixSiyNz/Si diodes as a function of post-deposition annealing temperature and time, and was found to depend heavily on the film composition and microstructure. TiN implanted with Si28, l0keV, 5xl016ions/cm2 formed an amorphous ternary TixSiyNz layer whose performance as a barrier to Cu diffusion exceeded that of unimplanted, polycrystalline TiN. Results from current-voltage, transmission electron microscopy (TEM), and Auger depth profiling measurements will be presented. The relationship between Si-implantation dose, TixSiyNz structure and reverse leakage current of Cu/TixSiyNz/Si diodes will be discussed, along with implications as to the suitability of these structures in Cu metallization.

scholarly journals Synthesis and electrical characterization of Ca2Nd4Ti6O20 ceramics

2016 ◽  
Vol 34 (1) ◽  
pp. 164-168
Author(s):  
Raz Muhammad ◽  
Muhammad Uzair ◽  
M. Javid Iqbal ◽  
M. Jawad Khan ◽  
Yaseen Iqbal ◽  
...  
Keyword(s):  
Activation Energy ◽  
Dielectric Constant ◽  
Room Temperature ◽  
Sol Gel ◽  
Electrical Characterization ◽  
Sintered Sample ◽  
First Time ◽  
Alkoxide Precursors ◽  
Room Temperature Dielectric Constant

AbstractCa2Nd4Ti6O20, a layered perov skite structured material was synthesized via a chemical (citrate sol-gel) route for the first time using nitrates and alkoxide precursors. Phase analysis of a sample sintered at 1625 °C revealed the formation of an orthorhombic (Pbn21) symmetry. The microstructure of the sample after sintering comprised rod-shaped grains of a size of 1.5 to 6.5µm. The room temperature dielectric constant of the sintered sample was 38 at 100 kHz. The remnant polarization (Pr) and the coercive field (Ec) were about 400 μC/cm2 and 8.4 kV/cm, respectively. Impedance spectroscopy revealed that the capacitance (13.7 pF) and activation energy (1.39 eV) of the grain boundary was greater than the capacitance (5.7 pF) and activation energy (1.13 eV) of the grain.

Electrical characterization of room temperature humidity sensors in La0.8Sr0.2Fe1−xCuxO3 (x=0, 0.05, 0.10)

2012 ◽  
Vol 38 (4) ◽  
pp. 2865-2872 ◽  
Author(s):  
A. Cavalieri ◽  
T. Caronna ◽  
I. Natali Sora ◽  
J.M. Tulliani
Keyword(s):  
Room Temperature ◽  
Electrical Characterization ◽  
Humidity Sensors

Structural and electrical characterization of AIN thin films obtained by nitridation of Al/Si substrate

1999 ◽  
Vol 28 (3) ◽  
pp. 225-227 ◽  
Author(s):  
Jipo Huang ◽  
Lianwei Wang ◽  
Qinwo Shen ◽  
Chenglu Lin ◽  
Mikael Östling
Keyword(s):  
Thin Films ◽  
Electrical Characterization ◽  
Si Substrate

Synthesis and Characterization of In2O3 Nanobelts via Hydrothermal Route

2015 ◽  
Vol 1118 ◽  
pp. 43-46
Author(s):  
Guo Dong Liu ◽  
Yu Guang Wang ◽  
Hui Bing Lu ◽  
Yuan Tian
Keyword(s):  
Heat Treatment ◽  
Single Crystals ◽  
Hydrothermal System ◽  
Room Temperature ◽  
Synthesis And Characterization ◽  
Hydrothermal Route ◽  
Pl Spectra

In the hydrothermal system, In (OH)3nanobelts were obtained. After heat-treatment at 300 °C, In2O3single crystals nanobelts were produced, which can keep the morphologies and sizes of precursors. The room temperature PL spectra of as-prepared In2O3nanobelts are also detected. PL peaks of In2O3nanobelts mainly focused at 458 nm (blue).

Supersonic Cluster Beam Synthesis of Nanophase Materials

1999 ◽  
Vol 581 ◽  
Author(s):  
P. Milanil ◽  
S. Iannotta ◽  
F. Biasioli ◽  
P. Piseri ◽  
E. Barborini
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Tini Alloy ◽  
Cluster Beam ◽  
Crystallite Sizes ◽  
Nanophase Materials ◽  
Cluster Beams ◽  
Cluster Beam Deposition ◽  
Beam Deposition

ABSTRACTWe present the characterization of supersonic cluster beam deposition as a viable technique for the synthesis of nanostructured materials. Stable and intense cluster beams can be obtained with a pulsed microplasma cluster source. This technique has been applied to produce TiNi nanostructured thin films on various substrates at room temperature. The morphology and the structure of the film are strongly influenced by the precursor clusters. Films characterized by crystallite sizes of a few tens of nanometers can be grown without recrystallization by thermal annealing. The stoichiometry of the original TiNi alloy is maintained.

scholarly journals Fabrication and characterization of Si/SiO2/TiO2/ZnO heterostructures from sputtered and oxidized Ti-film

2017 ◽  
Vol 68 (7) ◽  
pp. 58-61
Author(s):  
Jaroslav Kováč ◽  
Martin Florovič ◽  
Andrej Vincze ◽  
Edmund Dobročka ◽  
Ivan Novotný ◽  
...  
Keyword(s):  
Rf Sputtering ◽  
Depth Profiling ◽  
Si Substrate ◽  
Electrical And Optical Properties ◽  
X Ray ◽  
Vis Spectroscopy ◽  
Fabrication And Characterization ◽  
Sims Depth Profiling ◽  
Structure Properties

AbstractThe present work reports the fabrication of p-Si/SiO2/TiO2and p-Si/SiO2/TiO2/ZnO heterostructures deposited by RF sputtering on p-Si substrate. The structural properties of the heterostructures were characterized by X-ray reflectivity and SIMS depth profiling. The electrical and optical properties of the heterostructures were investigated byI − V, C-V measurements and VIS spectroscopy, respectively. The measurements reveal thatI − Vcharacteristics in dark show semiconductor-insulator-semiconductor (SIS) structure properties. TheI − Vcharacteristics under illumination exhibit changes with significant increase of photocurrent due to photoassisted tunnelling and injection through SiO2/TiO2interlayer.

Synthesis and Characterization of Carbon Nitride Thin Film with Evidence of Nanodomes

2004 ◽  
Vol 843 ◽  
Author(s):  
S. Chowdhury ◽  
M. T. Laugier
Keyword(s):  
Thin Film ◽  
Deposition Temperature ◽  
Carbon Nitride ◽  
Room Temperature ◽  
Electrical Characterization ◽  
Microstructural Characterization ◽  
Rf Magnetron Sputtering ◽  
Synthesis And Characterization ◽  
Sputtering System

ABSTRACTWe have reported the synthesis of carbon nitride thin films with evidence of formation of carbon nanodomes over a range of substrate temperature from 50 °C to 550 °C. An RF magnetron sputtering system was used for depositing carbon nitride films. The size of the nanodomes can be controlled by deposition temperature and increases from 40–80 nm at room temperature to 200–400 nm at high temperature (550 °C). Microstructural characterization was performed by AFM. Electrical characterization shows that these films have conductive behaviour with a resistivity depending on the size of the nanodomes. Resistivity values of 20 mΩ-cm were found for nanodomes of size 40–80 nm falling to 6 m?-cm for nanodomes of size 200–400 nm. Nanoindentation results show that the hardness and Young's modulus of these films are in the range from 9–22 GPa and 100–168 GPa respectively and these values decrease as the size of the nanodomes increases. GXRD results confirm that a crystalline graphitic carbon nitride structure has formed.

Characterization of New SBT Sol System and its thin film on the Platinum Electrode for Fram Application

1997 ◽  
Vol 493 ◽  
Author(s):  
YongSoo Choi ◽  
WooSik Kim ◽  
ChangEun Kim ◽  
WhanSik Yoo ◽  
BaeYeon Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Heat Treatment ◽  
Grain Size ◽  
Platinum Electrode ◽  
Chelating Agent ◽  
Si Substrate ◽  
Electrode Area ◽  
Average Grain Size

ABSTRACTStable SBT sols for FRAM application were made from Sr-isopropoxide, Bi-acetate, and Ta-ethoxide with 2-ethoxyethanol as a solvent and chelating agent, TEA. The sol were spin-on coated on the Pt /Ti/SiO2/Si substrate. From the IR and DTA/TGA, the 2-ethoxyethanol -triethanolamine sol system is quite stable against aging. 5% excess Bi added sol and 800°C heat treatment of the thin film revealed the most crystallinity. There is a change in the orientation of thin film above 800°C heat treatment from c-axis to(105). The average grain size of thin film is very small, i.e., 40 nm at 800°C, and it has very narrow distributions, and the thickness of the coating were about 100nm, which would promise smaller electrode area and higher yield.

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