scholarly journals Low cost, p-ZnO/n-Si, rectifying, nano heterojunction diode: Fabrication and electrical characterization

2014 ◽  
Vol 5 ◽  
pp. 2216-2221 ◽  
Author(s):  
Vinay Kabra ◽  
Lubna Aamir ◽  
M M Malik
Keyword(s):  
Zno Nanoparticles ◽  
Low Cost ◽  
Electrical Characterization ◽  
Hall Effect Measurement ◽  
Dip Coating ◽  
Si Substrate ◽  
Electronic Circuitry ◽  
Uv Illumination ◽  
P Type ◽  
Dip Coating Technique

A low cost, highly rectifying, nano heterojunction (p-ZnO/n-Si) diode was fabricated using solution-processed, p-type, ZnO nanoparticles and an n-type Si substrate. p-type ZnO nanoparticles were synthesized using a chemical synthesis route and characterized by XRD and a Hall effect measurement system. The device was fabricated by forming thin film of synthesized p-ZnO nanoparticles on an n-Si substrate using a dip coating technique. The device was then characterized by current–voltage (I–V) and capacitance–voltage (C–V) measurements. The effect of UV illumination on the I–V characteristics was also explored and indicated the formation of a highly rectifying, nano heterojunction with a rectification ratio of 101 at 3 V, which increased nearly 2.5 times (232 at 3 V) under UV illumination. However, the cut-in voltage decreases from 1.5 V to 0.9 V under UV illumination. The fabricated device could be used in switches, rectifiers, clipper and clamper circuits, BJTs, MOSFETs and other electronic circuitry.

Low-cost deposition of cupric oxide thin films for optoelectronic applications

2018 ◽  
Vol 84 (2) ◽  
pp. 20301 ◽  
Author(s):  
Sanjay Kumar ◽  
Sudhir Saralch ◽  
Dinesh Pathak
Keyword(s):  
Cupric Oxide ◽  
Low Cost ◽  
Sol Gel ◽  
Solar Spectrum ◽  
Dip Coating ◽  
Electrical And Optical Properties ◽  
Chloride Dihydrate ◽  
Photovoltaic Applications ◽  
P Type ◽  
Dip Coating Technique

Copper oxide is a compound that has been considered significant owing to its many advantages such as easy availability of copper in huge quantity, its non-toxic nature and the good electrical and optical properties. It is p-type with bandgap range of 1.21–1.51 eV and has potential of absorption of solar spectrum. In this work, sol–gel chemistry is explored to deposit CuO using cupric chloride dihydrate (CuCl2 · 2H2O) with 5, 10 and 15% concentration of EDTA (capping agent) using low-cost dip-coating and annealed at 400 °C. The bandgap of the CuO films was found to be in the range of 1.3–1.8 eV, which is comparable with the reported values and also suggests quantum shift in these nanostructures. These investigations suggest suitability of these layers as absorber for photovoltaic applications. SEM investigation suggests the uniform growth of layers by dip-coating techniques. Capping also appears to control the grain growth as observed by electron microscopy. Sol–gel dip-coating technique is presented in this study for deposition of flat layers.

Low-Cost Fabrication of UV Photodetector Based on Hexagonal Nanocrystal ZnO:Al/p-Si Heterojunction

NANO ◽  
2016 ◽  
Vol 11 (02) ◽  
pp. 1650019 ◽  
Author(s):  
Li Duan ◽  
Feng Wei ◽  
Jibin Fan ◽  
Xiaochen Yu ◽  
Wenxue Zhang ◽  
...  
Keyword(s):  
Low Cost ◽  
Volume Ratio ◽  
Response Speed ◽  
Nanorod Array ◽  
Uv Photodetector ◽  
Uv Illumination ◽  
Simple Chemical ◽  
Vertically Aligned ◽  
Cbd Method ◽  
P Type

ZnO:Al/p-Si heterojunction was fabricated by depositing a hexagonal nanocrystal ZnO:Al film on p-type Si substrate using a simple chemical bath deposition (CBD) method. The vertically aligned hexagonal ZnO:Al nanocrystals reduce the grain boundary scattering and provide good conductivity. The ZnO:Al/Si heterojunction shows obvious photocurrent under ultraviolet (UV) illumination. A high UV-to-visible rejection ratio of the ZnO:Al/Si heterojunction indicates that the hexagonal nanocrystal ZnO:Al film is a good material for fabricating UV photodetectors. Furthermore, the response speed of the photodetector based on ZnO:Al hexagonal nanocrystal film is faster than that of most previously reported photodetectors based on ZnO:Al nanorods. We infer it is because the ZnO:Al nanocrystals film has a smaller surface to volume ratio than the ZnO:Al nanorod array.

Construction of High-Quality P-Type ZnSe Nanowires/n-Type Si Heterojunctions and their Nano-Optoelectronic Applications

2012 ◽  
Vol 569 ◽  
pp. 31-34
Author(s):  
Min Lu ◽  
Xing Zhi Zhao ◽  
Xiang An Wang ◽  
Yong Bin Ren ◽  
Li Wang
Keyword(s):  
Fill Factor ◽  
Low Cost ◽  
Fast Response ◽  
Si Substrate ◽  
High Power Conversion Efficiency ◽  
High Quality ◽  
Znse Nanowires ◽  
P Type ◽  
Photovoltaic Characteristics ◽  
Excellent Stability

We report a simple and low-cost method for constructing high-quality p-type ZnSe nanowires/n-type Si heterojunction by growing p-type ZnSe:N nanowires on n-type Si substrate. The heterojunction shows excellent stability and reproducibility to white light irradiation with a fast response time (103). And the photovoltaic characteristics of it exhibit a fill factor of about 24% and a high power conversion efficiency of 0.89%.

scholarly journals Preparation and structural-optical characterization of dip-coated nanostructured Co-doped ZnO dilute magnetic oxide thin films

RSC Advances ◽  
2017 ◽  
Vol 7 (33) ◽  
pp. 20611-20619 ◽  
Author(s):  
L. R. Valério ◽  
N. C. Mamani ◽  
A. O. de Zevallos ◽  
A. Mesquita ◽  
M. I. B. Bernardi ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Cost ◽  
Optical Characterization ◽  
Dip Coating ◽  
Magnetic Oxide ◽  
Doped Zno ◽  
Dip Coating Technique ◽  
Dilute Magnetic Oxide ◽  
Co Doped

We demonstrate the feasibility to prepare Co-doped ZnO thin films (Zn1−xCoxO, x = 0; 0.01; 0.03 and 0.05) via the dip-coating technique, a very simple and a low-cost process. We focus the structural and the optical analyses in the context of the DMOs.

Characterization of Difference Size of IDE Pattern for Formaldehyde Detection Sensor

2015 ◽  
Vol 754-755 ◽  
pp. 917-922 ◽  
Author(s):  
M. Zaki ◽  
Uda Hashim ◽  
Mohd Khairuddin Md Arshad ◽  
M.F.M. Fathil ◽  
A.H. Azman ◽  
...  
Keyword(s):  
Gas Sensing ◽  
Low Cost ◽  
Electrical Characterization ◽  
Gas Detection ◽  
Si Substrate ◽  
Hard Mask ◽  
Large Size ◽  
Mask Design ◽  
The Ideal

This paper studies the effect of different gap sizes of IDE pattern on the surface morphology and electrical properties for the formaldehyde detection sensor. Two types of IDE chrome mask are designed to determine the ideal IDE pattern for formaldehyde gas detection by using conventional lithography. In the first method, IDE is transferred onto SiO2layer. In order to ensure that the perfect pattern with minimum defect structure is obtained, the process parameters should be optimized and controlled. In the second method, the aluminium is deposited directly on SiO2/Si substrate by using IDE hard mask design plate. The fabricated IDE pattern is further validated through morphological and electrical characterization. The average gap size of IDE sensor is approximately 100 μm and 400 μm for IDE chrome and IDE hard mask respectively. The latter method is preferable since for formaldehyde gas sensing large size is needed and moreover the process is simple and requires low cost. Characterization of difference IDE pattern is demonstrated by various measurements.

scholarly journals Electrical Characterization of Sol-Gel Derived TiO2Film on c-Si Substrate by Admittance Measurement

2014 ◽  
Vol 2014 ◽  
pp. 1-5
Author(s):  
Ayşe Evrim Saatci ◽  
Orhan Özdemir
Keyword(s):  
Crystalline Silicon ◽  
Sol Gel ◽  
Electrical Characterization ◽  
Metal Electrode ◽  
Dip Coating ◽  
Current Voltage ◽  
Dta Analysis ◽  
Dip Coating Technique ◽  
And Storage

Transport and storage properties of sol-gel synthesized, namely, dip coating technique, titanium dioxide (TiO2) thin film over crystalline silicon (c-Si), has been investigated by means of current-voltage (I-V) and admittance analysis within different ambient. Considering the work function of anatase TiO2film, determined by both FTIR and TG/DTA analysis, silver (Ag) as front metal electrode was chosen to hinder a barrier for charge carriers. Electrical analysis implied that Ag/TiO2/c-Si structure was actually constituted by Ag/TiO2/native silicon dioxide (SiO2)/c-Si [SIS] structure, in which SiO2layer was identified by FTIR analysis. Consequently, the electrical features of the film were interpreted in terms of SIS diode that is capable of explaining C-V features.

Capacitance-Voltage (C-V) Properties of ZnO:Al/p-Si Heterojunctions

2013 ◽  
Vol 334-335 ◽  
pp. 349-352
Author(s):  
N. Baydogan ◽  
Y. Gokce ◽  
Murat Baydogan ◽  
Huseyin Cimenoglu
Keyword(s):  
Thin Film ◽  
Sol Gel ◽  
Dip Coating ◽  
Coating Technique ◽  
Capacitance Voltage ◽  
Abrupt Interface ◽  
P Type ◽  
Dip Coating Technique ◽  
Si Wafer

ZnO:Al/p-Si heterojunctions were fabricated by sol-gel dip coating technique onto p-type Si wafer substrates. Capacitance-Voltage (C-V) characteristics of ZnO:Al/p-Si heterojunctions were determined after the ZnO:Al thin film coated Si wafers were annealed at 700 and 800°C, respectively. C-V results indicate an abrupt interface.

scholarly journals Indium-Nitrogen Codoped Zinc Oxide Thin Film Deposited by Ultrasonic Spray Pyrolysis on n-(111) Si Substrate: The Effect of Film Thickness

2014 ◽  
Vol 2014 ◽  
pp. 1-7 ◽  
Author(s):  
Cheng-Chang Yu ◽  
Wen-How Lan ◽  
Kai-Feng Huang
Keyword(s):  
Activation Energy ◽  
Zinc Oxide ◽  
Film Thickness ◽  
Spray Pyrolysis ◽  
Hole Concentration ◽  
Hall Effect Measurement ◽  
Oxide Thin Film ◽  
Si Substrate ◽  
P Type ◽  
Type Conduction

Indium-nitrogen codoped zinc oxide (INZO) thin films were fabricated by spray pyrolysis deposition technique on n-(111) Si substrate with different film thicknesses at 450°C using a precursor containing zinc acetate, ammonium acetate, and indium nitrate with 1 : 3 : 0.05 at.% concentration. The morphology and structure studies were carried out by scanning electron microscopy (SEM) and X-ray diffraction (XRD). The grain size of the films increased when increasing the film thickness. From XRD spectra, polycrystalline ZnO structure can be observed and the preferred orientation behavior varied from (002) to (101) as the film thickness increased. The concentration and mobility were investigated by Hall effect measurement. the p-type films with a hole mobility around 3 cm2V−1s−1and hole concentration around3×1019 cm−3can be achieved with film thickness less than 385 nm. The n-type conduction with concentration1×1020 cm−3is observed for film with thickness 1089 nm. The defect states were characterized by photoluminescence. With temperature-dependent conductivity analysis, acceptor state with activation energy 0.139 eV dominate the p type conduction for thin INZO film. And the Zn-related shallow donors with activation energy 0.029 eV dominate the n-type conduction for the thick INZO film.

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