A Study on Physically Based Maximum Electric Field Modeling Used for HCI Induced Degradation Characteristic of LDMOS

2019 ◽  
Vol 888 ◽  
pp. 89-95
Author(s):  
Nobukazu Tsukiji ◽  
Hitoshi Aoki ◽  
Haruo Kobayashi
Keyword(s):  
Electric Field ◽  
Field Model ◽  
High Current ◽  
Field Modeling ◽  
Large Current ◽  
Physically Based ◽  
Degradation Characteristic ◽  
Maximum Electric Field ◽  
Injection Effect ◽  
Gate Edge

This paper describes a physically based maximum electric field model of laterally diffused MOSFET (LDMOS) transistors under the condition of high current injection effect used for reliability and aging simulations. LDMOSFETs work under high-voltage and large-current biases, where electric field increases with the biases at the gate edge. We present formulations, implementations into SPICE simulators and measurement verifications of our physically based maximum electric field model.

scholarly journals Test of a High-gradient Low-emittance Electron Gun

1997 ◽  
Vol 15 (3) ◽  
pp. 427-447 ◽  
Author(s):  
F. Villa ◽  
F. Villa ◽  
A. Luccio
Keyword(s):  
Electric Field ◽  
Beam Current ◽  
Electron Gun ◽  
Electron Current ◽  
Beam Emittance ◽  
High Gradient ◽  
Large Current ◽  
Theoretical Predictions ◽  
Maximum Electric Field ◽  
Low Emittance

A maximum electric field E = 2.65 GV/m with an accelerated electron current of 1 KA has been obtained, for pulse lengths of 130 ps, in an electron gun based on Pulse Power Technology. This is the highest accelerating field ever achieved in the presence of such a large current. Measurements of beam emittance and energy from 0.4 to 2.65 MeV show that the scaling of the invariant emittance with electric field and with beam current is consistent with theoretical predictions. A few applications of high-gradient acceleration are discussed.

Far field modeling of the Mamala Bay outfalls

1998 ◽  
Vol 38 (10) ◽  
pp. 323-330
Author(s):  
Philip J. W. Roberts
Keyword(s):  
Field Model ◽  
Near Field ◽  
Far Field ◽  
Field Modeling ◽  
Visitation Frequency ◽  
Statistical Variation ◽  
Long Time ◽  
Harmonic Average ◽  
Ocean Outfall ◽  
Acoustic Doppler Current Profilers

The results of far field modeling of the wastefield formed by the Sand Island, Honolulu, ocean outfall are presented. A far field model, FRFIELD, was coupled to a near field model, NRFIELD. The input data for the models were long time series of oceanographic observations over the whole water column including currents measured by Acoustic Doppler Current Profilers and density stratification measured by thermistor strings. Thousands of simulations were made to predict the statistical variation of wastefield properties around the diffuser. It was shown that the visitation frequency of the wastefield decreases rapidly with distance from the diffuser. The spatial variation of minimum and harmonic average dilutions was also predicted. Average dilution increases rapidly with distance. It is concluded that any impact of the discharge will be confined to a relatively small area around the diffuser and beach impacts are not likely to be significant.

scholarly journals Analysis of Electric Field and Current Density for Different Electrode Configuration of XLPE Insulation

2018 ◽  
Vol 7 (3.36) ◽  
pp. 127 ◽  
Author(s):  
Nishanthi Sunthrasakaran ◽  
Nor Akmal Mohd Jamail ◽  
Qamarul Ezani Kamarudin ◽  
Sujeetha Gunabalan
Keyword(s):  
Electric Field ◽  
Power System ◽  
Field Distribution ◽  
High Voltage ◽  
Current Density ◽  
Electric Field Distribution ◽  
Electrical Power ◽  
High Electric Field ◽  
Electrode Configuration ◽  
Maximum Electric Field

The most important aspect influencing the circumstance and characteristics of electrical discharges is the distribution of electric field in the gap of electrodes. The study of discharge performance requires details on the variation of maximum electric field around the electrode. In electrical power system, the insulation of high voltage power system usually subjected with high electric field. The high electric field causes the degradation performance of insulation and electrical breakdown start to occur. Generally, the standard sphere gaps widely used for protective device in electrical power equipment. This project is study about the electric field distribution and current density for different electrode configuration with XLPE barrier. Hence, the different electrode configuration influences the electric field distribution. This project mainly involves the simulation in order to evaluate the maximum electric field for different electrode configuration. Finite Element Method (FEM) software has been used in this project to perform the simulation. This project also discusses the breakdown characteristics of the XLPE. The accurate evaluation of electric field distribution and maximum electric field is an essential for the determination of discharge behavior of high voltage apparatus and components. The degree of uniformity is very low for pointed rod-plane when compared to other two electrode configurations. The non- uniform electric distribution creates electrical stress within the surface of dielectric barrier. As a conclusion, when the gap distance between the electrodes increase the electric field decrease.  

ON OPTIMUM PUPIL FIELDS WITH MAXIMUM ELECTRIC FIELD COMPONENT IN FOCUS

2010 ◽  
Vol 19 (01) ◽  
pp. 189-201
Author(s):  
H. P. URBACH ◽  
S. F. PEREIRA ◽  
D. J. BROER
Keyword(s):  
Electric Field ◽  
Field Component ◽  
Optical Axis ◽  
Focal Point ◽  
Longitudinal Component ◽  
Electric Field Component ◽  
Incident Power ◽  
Entrance Pupil ◽  
Maximum Electric Field ◽  
High Na Lens

The field in the entrance pupil of a high NA lens can be optimized such that, for given incident power, the electric field component in a given direction in the focal point is maximum. If the field component is chosen parallel to the optical axis, the longitudinal component is maximized and it is found that the optimum longitudinal component is narrower than the Airy spot. We discuss how this can be used to obtain higher resolution in photolithography when a resist is used that is sensitive to only the longitudinal component. We describe a proposition for realizing such resist.

scholarly journals Cause Analysis and Countermeasures of a Breakdown Failure of Flexible 110 kV Cable Terminal

2018 ◽  
Vol 38 ◽  
pp. 04004
Author(s):  
Feng Huang
Keyword(s):  
Electric Field ◽  
Electric Field Intensity ◽  
Field Model ◽  
Semiconductor Layer ◽  
Mechanism Analysis ◽  
The Finite Element Method ◽  
Cable Insulation ◽  
Cause Analysis ◽  
Breakdown Mechanism ◽  
Calculation Results

disintegration examination and analysis are employed in flexible terminal breakdown of 110 kV XLPE insulated cables. It is considered that the main reason of breakdown is the separation of the stress cone of the terminal and the fracture of the semi- conductive layer of the cable insulation. Therefore, the finite element method is used to electric field model and simulate the dislocation fault of internal stress cone and outer semiconductor layer of cable insulation. The distribution of the electric field intensity is calculated and compared. The simulation and calculation results verify the validity of the breakdown mechanism analysis, and put forward some practical suggestions.

scholarly journals 60 GHz Double Deck T-Gate AlN/GaN/AlGaN HEMT for V-Band Satellites

2021 ◽  
Author(s):  
A.S. Augustine Fletcher ◽  
D Nirmal ◽  
J Ajayan ◽  
L Arivazhagan ◽  
Husna Hamza K ◽  
...  
Keyword(s):  
Electric Field ◽  
Breakdown Voltage ◽  
Figure Of Merit ◽  
Drain Current ◽  
60 Ghz ◽  
Mechanical Reliability ◽  
Gan Hemt ◽  
V Band ◽  
Silicon Carbide Substrate ◽  
Gate Edge

Abstract The influence of double deck T-gate on LG=0.2 μm AlN/GaN/AlGaN HEMT is analysed in this paper. The T-gate supported with Silicon Nitride provides a tremendous mechanical reliability. It drops off the crest electric-field at gate edges and postponing the breakdown voltage of a device. A 0.2-μm double deck T-gate HEMT on Silicon Carbide substrate offer fMAX of 107 Giga Hertz, fT of 60 Giga Hertz and the breakdown voltage of 136 Volts. Furthermore, it produces the maximum-transconductance and drain-current of 0.187 Siemens/mm and 0.41 Ampere/mm respectively. In addition, the lateral electric-field noticed at gate-edge shows 2.1×106 Volts/cm. Besides, the double deck T-gate AlN/GaN HEMT achieves a 45 % increment in breakdown voltage compared to traditional GaN-HEMT device. Moreover, it reveals a remarkable Johnson figure-of-merit of 7.9 Tera Hertz Volt. Therefore, the double deck T-gate on AlN/GaN/AlGaN HEMT is the superlative device for 60 GHz V-band satellite application.

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