The Electrical Characteristics of GaAs-MgO Interfaces of GaAs MIS Schottky Diodes

2015 ◽  
Vol 1118 ◽  
pp. 270-275 ◽  
Author(s):  
Xian Gao ◽  
Ji Long Tang ◽  
Dan Fang ◽  
Fang Chen ◽  
Shuang Peng Wang ◽  
...  
Keyword(s):  
Barrier Height ◽  
Schottky Diodes ◽  
Interface Layer ◽  
Experimental Result ◽  
Electrical Characteristics ◽  
Semiconductor Interface ◽  
Insulator Layer ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Mis Structures

Many researches pay attention to the metal-semiconductor interface barrier, due to its effect on device. Deliberate growing an interface layer to affect and improve the quality of device, especially metal-insulator-semiconductor (MIS) structures, arouses wide attention. In this paper, Be-doped GaAs was grown on substrate wafer by molecular beam epitaxy (MBE) on purpose before depositing insulator layer, and then MgO film as the dielectric interface layer of Au/GaAs were deposited using atomic layer deposition (ALD) method. The interface electrical characteristics of the metal-insulator-semiconductor (MIS) structures were investigated in detail. The barrier height and ideal factor of GaAs diode parameters were calculated by means of current-voltage (I-V) characteristics. Experimental result showed that along with the increasing of the doping content, the Schottky barrier height increasing, but the ideal factor decrease at first and then increase.

Pt/n-GaN metal-semiconductor and Pt/HfO2/n-GaN metal-insulator-semiconductor Schottky diodes

2014 ◽  
Vol 1736 ◽  
Author(s):  
Arjun Shetty ◽  
Basanta Roul ◽  
Shruti Mukundan ◽  
Greeshma Chandan ◽  
Lokesh Mohan ◽  
...  
Keyword(s):  
Barrier Height ◽  
Ideality Factor ◽  
Schottky Diodes ◽  
Reverse Current ◽  
X Ray Diffraction ◽  
Insulator Layer ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Sapphire Substrates ◽  
Contact Metal

ABSTRACTGallium nitride (n-type) films of thickness 300nm were grown on c-plane sapphire substrates using plasma assisted molecular beam epitaxy (PA-MBE). High resolution X-ray diffraction and photoluminescence measurements were used to confirm the crystalline and optical qualities of the grown films. Metal-semiconductor Schottky diodes were fabricated using Pt as the Schottky metal and Al as the Ohmic metal contact. Metal-insulator-semiconductor Schottky diodes were also fabricated using HfO2 (10nm) as the insulator material. Diode parameters like barrier height and ideality factor were extracted from I-V measurements. Introduction of HfO2 as the insulator layer leads to better rectifying behavior (forward to reverse current ratio improves from 5.1 to 8.9) with a reduction in reverse leakage current (by 7.4 times), increase in barrier height (from 0.62eV to 0.74eV) and a reduction in ideality factor (from 6 to 4.1) of the Schottky diode.

Electrical Characterization of Metal Insulator Semiconductor Using ZnO Low Deposition Temperature as Semiconductor Layer

2013 ◽  
Vol 832 ◽  
pp. 270-275 ◽  
Author(s):  
Lyly Nyl Ismail ◽  
Saifullah Ali Harun ◽  
Habibah Zulkefle ◽  
Sukreen Hana Herman ◽  
Mohamad Rusop Mahmood
Keyword(s):  
Deposition Temperature ◽  
Electrical Characterization ◽  
Rf Magnetron Sputtering ◽  
Semiconductor Layer ◽  
Zno Films ◽  
Insulator Layer ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Low Deposition Temperature ◽  
Mis Structures

We report on the influence of the low deposition temperature of ZnO as semiconductor layer on the electrical characteristics of metal-insulator-semiconductor (MIS) structures. The ZnO films were deposited by radio frequency (RF) magnetron sputtering with variation of temperature from 40°C, 60°C, 80°C, 100°C and 120°C. PMMA were used as insulator layer in the MIS structures. It is found that the ZnO films grown at 120°C has better crystallinity compared to other temperature. I-V characteristics results shown that the different deposition temperature of ZnO films affect the performance of MIS.

Ultra-Strong Mode Confinement at Semishell Metal/insulator/semiconductor Interface for Nanolaser

2021 ◽  
pp. 118242
Author(s):  
Ru Wang ◽  
Chunxiang Xu ◽  
Daotong You ◽  
Xiaoxuan Wang ◽  
Jinping Chen ◽  
...  
Keyword(s):  
Semiconductor Interface ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Strong Mode

Recessed-Gate GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistor Using a Dual Gate-Insulator Employing TiO2/SiN

2020 ◽  
Vol 20 (8) ◽  
pp. 4678-4683
Author(s):  
Jun Hyeok Jung ◽  
Min Su Cho ◽  
Won Douk Jang ◽  
Sang Ho Lee ◽  
Jaewon Jang ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
Gate Insulator ◽  
High Electron ◽  
Insulator Layer ◽  
Metal Insulator ◽  
High Electron Mobility ◽  
Metal Insulator Semiconductor ◽  
Dual Gate ◽  
Recessed Gate

In this work, we present a normally-off recessed-gate AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistor (MIS-HEMT) using a TiO2/SiN dual gate-insulator. We analyzed the electrical characteristics of the proposed device and found that the dual gate-insulator device achieves higher on-state currents than the device using a SiN gate-insulator because the high-k insulator layer of the dual gate-insulator improves the gate-controllability. The device using a TiO2/SiN gate-insulator shows better gate leakage current characteristics than the device with only TiO2 gate-insulator because of the high quality SiN gate-insulator. Therefore, the device using a dual gate-insulator can overcome disadvantages of a device using only TiO2 gate-insulator. To better predict the power consumption and the switching speed, we simulated the specific on-resistance (Ron, sp) according to the gate-to-drain distance (LGD) using the two-dimensional ATLAS simulator. The proposed device exhibits a threshold voltage of 2.3 V, a maximum drain current of 556 mA/mm, a low Ron, sp of 1.45 mΩ·cm2, and a breakdown voltage of 631 V at an off-state current of 1 μA/mm with VGS = 0 V. We have confirmed that a normally-off recessed-gate AlGaN/GaN MIS-HEMT using a TiO2/SiN dual gate-insulator is a promising candidate for power electronic applications.

Electrical characteristics of DNA-based metal-insulator-semiconductor structures

2010 ◽  
Vol 107 (12) ◽  
pp. 124518 ◽  
Author(s):  
S. Sönmezoğlu ◽  
Ö. Ateş Sönmezoğlu ◽  
G. Çankaya ◽  
A. Yıldırım ◽  
N. Serin
Keyword(s):  
Electrical Characteristics ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Semiconductor Structures
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