Electrical Characterization of Metal Insulator Semiconductor Using ZnO Low Deposition Temperature as Semiconductor Layer

2013 ◽  
Vol 832 ◽  
pp. 270-275 ◽  
Author(s):  
Lyly Nyl Ismail ◽  
Saifullah Ali Harun ◽  
Habibah Zulkefle ◽  
Sukreen Hana Herman ◽  
Mohamad Rusop Mahmood
Keyword(s):  
Deposition Temperature ◽  
Electrical Characterization ◽  
Rf Magnetron Sputtering ◽  
Semiconductor Layer ◽  
Zno Films ◽  
Insulator Layer ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Low Deposition Temperature ◽  
Mis Structures

We report on the influence of the low deposition temperature of ZnO as semiconductor layer on the electrical characteristics of metal-insulator-semiconductor (MIS) structures. The ZnO films were deposited by radio frequency (RF) magnetron sputtering with variation of temperature from 40°C, 60°C, 80°C, 100°C and 120°C. PMMA were used as insulator layer in the MIS structures. It is found that the ZnO films grown at 120°C has better crystallinity compared to other temperature. I-V characteristics results shown that the different deposition temperature of ZnO films affect the performance of MIS.

The Electrical Characteristics of GaAs-MgO Interfaces of GaAs MIS Schottky Diodes

2015 ◽  
Vol 1118 ◽  
pp. 270-275 ◽  
Author(s):  
Xian Gao ◽  
Ji Long Tang ◽  
Dan Fang ◽  
Fang Chen ◽  
Shuang Peng Wang ◽  
...  
Keyword(s):  
Barrier Height ◽  
Schottky Diodes ◽  
Interface Layer ◽  
Experimental Result ◽  
Electrical Characteristics ◽  
Semiconductor Interface ◽  
Insulator Layer ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Mis Structures

Many researches pay attention to the metal-semiconductor interface barrier, due to its effect on device. Deliberate growing an interface layer to affect and improve the quality of device, especially metal-insulator-semiconductor (MIS) structures, arouses wide attention. In this paper, Be-doped GaAs was grown on substrate wafer by molecular beam epitaxy (MBE) on purpose before depositing insulator layer, and then MgO film as the dielectric interface layer of Au/GaAs were deposited using atomic layer deposition (ALD) method. The interface electrical characteristics of the metal-insulator-semiconductor (MIS) structures were investigated in detail. The barrier height and ideal factor of GaAs diode parameters were calculated by means of current-voltage (I-V) characteristics. Experimental result showed that along with the increasing of the doping content, the Schottky barrier height increasing, but the ideal factor decrease at first and then increase.

Conductance-transient three-dimensional profiling of disordered induced gap states on metal-insulator-semiconductor structures

2001 ◽  
Vol 699 ◽  
Author(s):  
H. Castán ◽  
S. Dueñas ◽  
J. Barbolla ◽  
I. Mártil ◽  
G. González-Díaz
Keyword(s):  
Three Dimensional ◽  
Electrical Characterization ◽  
Quantitative Information ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Gap States ◽  
First Time ◽  
Transient Measurements ◽  
Mis Structures

AbstractAs it has been shown elsewhere, conductance transient measurements provide quantitative information about the disordered induced gap states (DIGS) in metal-insulator-semiconductor (MIS) structures. In this work we report for the first time the DIGS spatial and energetical distribution obtained by recording conductance transients at several temperatures (ranging from 77 to 300 K) and several frequencies (ranging from 100 Hz to 200 KHz). These measurements allow us to obtain three-dimensional defect maps of Al/SiNx:H/InP structures browsing ranges of 0.5 eV in energy and 40 Å in depth. Our results show that this technique is a very useful tool for the electrical characterization of MIS structures and reveals itself as very valuable in the III-V semiconductor-field-effect transistor scenario.

Highly c-Axis Oriented Al-Doped ZnO Thin Films Grown in Premixed H2/Ar Sputtering Gas

2007 ◽  
Vol 29-30 ◽  
pp. 215-218 ◽  
Author(s):  
Eun Soo Lee ◽  
Rachmat Adhi Wibowo ◽  
Kyoo Ho Kim
Keyword(s):  
Thin Films ◽  
Deposition Temperature ◽  
Rf Magnetron Sputtering ◽  
Preferential Orientation ◽  
Zno Thin Films ◽  
Zno Films ◽  
Sputtering Deposition ◽  
Infra Red ◽  
Doped Zno ◽  
Low Deposition Temperature

Al-doped ZnO (AZO) thin films were grown on Corning 1737 glass by RF Magnetron Sputtering under premixed hydrogen-argon (H2/Ar) sputtering gas. It is found that the introduction of various H2 concentrations during sputtering deposition altered the properties of Al-doped ZnO films. The presence of H2 during AZO growth at low deposition temperature leads to the growth of a-axis preferential orientation crystal whereas c-axis preferential orientation occurred only at higher deposition temperature. Highly oriented c-axis (002) crystal has been successfully grown under 3% H2 concentration at 200°C deposition temperature. Film’s resistivity is appeared to be a function of H2 concentration. Additional H2 concentration in sputtering gas increased of film’s transmittance up to 85% at visible-near infra red spectra while it caused the Burstein-Moss shift toward the blue region at 350 nm wavelength.

Recessed-Gate GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistor Using a Dual Gate-Insulator Employing TiO2/SiN

2020 ◽  
Vol 20 (8) ◽  
pp. 4678-4683
Author(s):  
Jun Hyeok Jung ◽  
Min Su Cho ◽  
Won Douk Jang ◽  
Sang Ho Lee ◽  
Jaewon Jang ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
Gate Insulator ◽  
High Electron ◽  
Insulator Layer ◽  
Metal Insulator ◽  
High Electron Mobility ◽  
Metal Insulator Semiconductor ◽  
Dual Gate ◽  
Recessed Gate

In this work, we present a normally-off recessed-gate AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistor (MIS-HEMT) using a TiO2/SiN dual gate-insulator. We analyzed the electrical characteristics of the proposed device and found that the dual gate-insulator device achieves higher on-state currents than the device using a SiN gate-insulator because the high-k insulator layer of the dual gate-insulator improves the gate-controllability. The device using a TiO2/SiN gate-insulator shows better gate leakage current characteristics than the device with only TiO2 gate-insulator because of the high quality SiN gate-insulator. Therefore, the device using a dual gate-insulator can overcome disadvantages of a device using only TiO2 gate-insulator. To better predict the power consumption and the switching speed, we simulated the specific on-resistance (Ron, sp) according to the gate-to-drain distance (LGD) using the two-dimensional ATLAS simulator. The proposed device exhibits a threshold voltage of 2.3 V, a maximum drain current of 556 mA/mm, a low Ron, sp of 1.45 mΩ·cm2, and a breakdown voltage of 631 V at an off-state current of 1 μA/mm with VGS = 0 V. We have confirmed that a normally-off recessed-gate AlGaN/GaN MIS-HEMT using a TiO2/SiN dual gate-insulator is a promising candidate for power electronic applications.

Synthesis and Characterization of Carbon Nitride Thin Film with Evidence of Nanodomes

2004 ◽  
Vol 843 ◽  
Author(s):  
S. Chowdhury ◽  
M. T. Laugier
Keyword(s):  
Thin Film ◽  
Deposition Temperature ◽  
Carbon Nitride ◽  
Room Temperature ◽  
Electrical Characterization ◽  
Microstructural Characterization ◽  
Rf Magnetron Sputtering ◽  
Synthesis And Characterization ◽  
Sputtering System

ABSTRACTWe have reported the synthesis of carbon nitride thin films with evidence of formation of carbon nanodomes over a range of substrate temperature from 50 °C to 550 °C. An RF magnetron sputtering system was used for depositing carbon nitride films. The size of the nanodomes can be controlled by deposition temperature and increases from 40–80 nm at room temperature to 200–400 nm at high temperature (550 °C). Microstructural characterization was performed by AFM. Electrical characterization shows that these films have conductive behaviour with a resistivity depending on the size of the nanodomes. Resistivity values of 20 mΩ-cm were found for nanodomes of size 40–80 nm falling to 6 m?-cm for nanodomes of size 200–400 nm. Nanoindentation results show that the hardness and Young's modulus of these films are in the range from 9–22 GPa and 100–168 GPa respectively and these values decrease as the size of the nanodomes increases. GXRD results confirm that a crystalline graphitic carbon nitride structure has formed.

Dynamics of Metal-SiOx and SiOx–Si Interfaces and the Associated Instabilities In Practical Metal/Insulator/Semiconductor Structures

1982 ◽  
Vol 18 ◽  
Author(s):  
G. Rajeswaran ◽  
W. A. Anderson ◽  
M. Jackson ◽  
M. Thayer
Keyword(s):  
Photoelectron Spectroscopy ◽  
Oxide Thickness ◽  
Quantitative Information ◽  
Charge Balance ◽  
Oxide Interface ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Barrier Heights ◽  
Thickness Variations ◽  
Mis Structures

X-ray photoelectron spectroscopy, Auger electron spectroscopy and ellipsometry measurements were performed at Cr-SiOx, and Yb-SiOx interfaces, which are being considered for metal/insulator/semiconductor (MIS) solar cell applications. These measurements have led to a knowledge of instability mechanisms associated with MIS solar cells. The dynamics of the metal-oxide interface reduce the effective thickness of the insulating SiOx layer. Typically, in a 3 week period after fabrication the oxide thickness decreases by about 2 Å for ytterbium MIS structures and by less than 1 Å for chromium MIS structures. A structural equilibrium is reached thereafter. To explore further the dependence of MIS Schottky barrier heights on oxide thickness variations (from about 5 to 20 Å) a comprehensive charge balance analysis was performed at a general MIS interface. This theoretical study supports experimental data on barrier heights and also on instabilities. In addition, the application of the theoretical model to the experimental barrier heights has yielded quantitative information regarding the density of interface states at the SiOx,–Si interface.

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