Nanoindentation Approach for Evaluation of Process Parameters Effect on the Strength of Bonded Au Ball Bonds

2010 ◽  
Vol 148-149 ◽  
pp. 1129-1132
Author(s):  
Shahrum Abdullah ◽  
Mohd Nubli Zulkifli ◽  
A. Jalar
Keyword(s):  
Process Parameters ◽  
Wire Bonding ◽  
Bonding Process ◽  
Bonding Time ◽  
Nanoindentation Test ◽  
Ultrasonic Power ◽  
Bonding Force ◽  
Bonding Parameters ◽  
Ball Bonds ◽  
Geometry Measurement

The nanoindentation test and geometry measurement have been conducted to evaluate the hardness and geometry changes of bonded Au ball bonds towards the changes of the selected wire bonding parameters namely bonding power, bonding time and bonding force. Three indentations were made on the bonded ball bonds to evaluate the variation of hardness properties with the location of indentation. It was noted that the increase of bonding or ultrasonic power will increase the hardness value for the indentations 1 and 3 located at the periphery of bonded ball bonds. The increase of bonding power also increased the deformation of bonded ball bonds. It was also shown that the increment of bonding time will increase the hardness value across the bonded ball bonds in almost even distribution. The application of the bonding force in the wire bonding process has the least effect on the hardness and geometry changes on the bonded ball bonds.

Bondability and Strength Evaluation of Gold Ball Bond Using Nanoindentation Approach

2016 ◽  
Vol 700 ◽  
pp. 132-141
Author(s):  
Muhammad Nubli Zulkifli ◽  
Azman Jalar ◽  
Shahrum Abdullah ◽  
Norinsan Kamil Othman
Keyword(s):  
Wire Bonding ◽  
Strength Distribution ◽  
Nanoindentation Test ◽  
Ball Bond ◽  
New Approach ◽  
Bonding Parameter ◽  
Responsible Mechanism ◽  
Reduced Modulus ◽  
Gold Ball ◽  
Ball Bonds

The evaluation of the strength and bondability of gold, Au ball bond requires a new approach to provide a more detail data. Nanoindentation test was used as a new approach to evaluate the strength distribution and bondability of Au ball. Au ball bonds that experienced different value of wire bonding parameter namely bonding force, bonding time, bonding power, and stage temperature were used as samples for the present analysis. The distribution of strength based on hardness and reduced modulus values located at the bonding area of Au ball bonds were found to be related with the values of the wire bonding parameter. Nanoindentation test was found to be a suitable approach to analyze and evaluate the bondability of Au ball bond in a localized and detailed manner. In addition, the responsible mechanism for the thermosonic Au wire bonding can be identified and analyzed by using the results obtained from the nanoindentation test.

Nanoindentation Study on Heat Treated Gold Wire Bonding

2016 ◽  
Vol 857 ◽  
pp. 31-35
Author(s):  
Wan Yusmawati Wan Yusoff ◽  
Azman Jalar ◽  
Norinsan Kamil Othman ◽  
Irman Abdul Rahman
Keyword(s):  
High Temperature ◽  
Storage Period ◽  
Gold Wire ◽  
Constant Load ◽  
Wire Bonding ◽  
Nanoindentation Test ◽  
High Temperature Storage ◽  
Gold Ball ◽  
Ball Bonds ◽  
Temperature Storage

The effect of high temperature storage of gold ball bonds towards micromechanical properties has been investigated. Gold wire from thermosonic wire bonding exposed to high temperature storage at 150 °C for 10, 100 and 1000 hours. The nanoindentation test was used in order to evaluate the high temperature storage effect on wire bonding in more details and localized. Prior to nanoindentation test, the specimens were cross-sectioned diagonally. The constant load nanoindentation was performed at the center of gold ball bond to investigate the hardness and reduced modulus. The load-depth curve of nanoindentation for the high temperature storage gold wire has apparent the discontinuity during loading compared to as-received gold wire. The hardness value increased after subjected to high temperature storage. However, the hardness decreased when the storage period is extended. The decreasing in the hardness value may due to the grain size of Au metal which recrystallized after subjected to high temperature storage. The results obtained from nanoindentation is important in assessing the high temperature storage of wire bonding.

Study on the Glass Silicon Anodic Direct Bonding Parameters

2016 ◽  
Vol 1 (1) ◽  
pp. 71
Author(s):  
Li Jia ◽  
Guo Hao ◽  
Guo Zhiping ◽  
Miao Shujing ◽  
Wang Jingxiang
Keyword(s):  
Experimental Study ◽  
Wafer Bonding ◽  
Bonding Temperature ◽  
Bonding Process ◽  
Bonding Time ◽  
Experimental Results ◽  
Bonding Quality ◽  
Mems Packaging ◽  
Bonding Parameters ◽  
Test Platform

<p>By MEMS packaging test platform for bonding process of bonding temperature and bonding time, and test silicon specifications experimental study. Experimental results indicate that when the bonding voltage of 1200V, bonding temperature of 445<sup>0</sup>C to 455<sup>0</sup>C, bonding time is 60s,the void fraction is less than 5%.Glass and silicon wafer bonding quality can achieve the best. The experimental results in order to improve the glass silicon bonding quality provide the basis.</p>

Optimized Wire Bonding Process on Micro-Connection Pad with Ni/CeO2 Coatings

2013 ◽  
Vol 275-277 ◽  
pp. 1925-1928
Author(s):  
Chun Yu Wang ◽  
Qing Wang ◽  
Han Zhu Li ◽  
Xiao Zhi Ji ◽  
Zhi Long Kang
Keyword(s):  
Electroless Plating ◽  
Wire Bonding ◽  
Bonding Process ◽  
Ultrasonic Power ◽  
Conversion Coatings ◽  
Bonding Pressure ◽  
Ultrasonic Time ◽  
Bonding Properties

Keywords: Electroless plating Ni, CeO2, Micro-connection pad, Wire bonding Abstract. It is Ni/CeO2 coatings that have been prepared on SiC/Al composites surfaces (electroless plating Ni and depositing CeO2 conversion coatings). It is employed to wire bonding process as a new micro-connection pad in this paper. During bonding process, ultrasonic time, ultrasonic power, bonding pressure, etc. have been investigated. The optimized parameters are obtained with the best bonding properties.

Gold to Gold Thermosonic Flip Chip Bonding on Ceramic Substrate

2002 ◽  
Author(s):  
J. Wei ◽  
Z. P. Wang ◽  
Y. M. Tan
Keyword(s):  
Cross Sections ◽  
Shear Force ◽  
Flip Chip ◽  
Shear Failure ◽  
High Reliability ◽  
Ceramic Substrate ◽  
Ultrasonic Power ◽  
Test Results ◽  
Bonding Force ◽  
Bonding Parameters

In this study, a thermosonic flip chip process has been developed to assemble gold bumped die to an Al2O3 ceramic substrate. The effects of bonding conditions, such as ultrasonic power, temperature, bonding force and bonding time, on the reliability of the interconnections were investigated. It was found that ultrasonic power and bonding force were the major factors influencing the reliability. High ultrasonic power and bonding force resulted in high reliability. The thermal cycling test results (from −55 °C to 125 °C) showed that the assemblies passed 1250 cycles with no change in resistance. The pressure cooker test results (15 psig pressure and 100% RH at temperature of 121 °C) showed that the assemblies passed 168 hours with no change in resistance. The shear force test results showed that the shear force at failure ranged from 10 to 40 grams per bump depending on bonding parameters. The interconnect cross-sections and the fracture surfaces on selected dies and substrates were observed with scanning electron microscope (SEM). It was found that the shear failure usually occurred between a gold pad and ceramic substrate, indicating a strong bonding interface between the gold bump and pad on the substrate. The performance of the assemblies fell into the reliable region as long as the bonding force, temperature, and ultrasonic power were high enough. The failure mechanisms consisted of separation between Au bump and Au pad, separation between Au pad and substrate and cracking inside Au pad or trace. The ultrasonic power drove relative movement between Au bumps and Au pads, causing friction and heat in the interface to result in micro-welding.

Optimization of Diffusion Bonding Process Parameters of Aluminium AA6061-Fly Ash Composites using Taguchi Method

2017 ◽  
Vol 9 (4) ◽  
Author(s):  
A. Sittaramane ◽  
G. Mahendran
Keyword(s):  
Fly Ash ◽  
Taguchi Method ◽  
Process Parameters ◽  
Diffusion Bonding ◽  
Bonding Strength ◽  
Bonding Temperature ◽  
Bonding Process ◽  
Bonding Pressure ◽  
Bonding Parameters ◽  
Response Table

This paper focused to determine optimal bonding parameters based on Taguchi method for maximizing bonding strength. The experiments were conducted on diffusion bonding machine using aluminium fly ash (AFA) composites. Three bonding parameters such as temperature, pressure and time, each at three levels were examined. Taguchi L27 orthogonal array was used as a design of experiment. The response table and the analysis of variance (ANOVA) were calculated to determine which process parameters significantly affect the bonding strength and also the % contribution of each parameter. The results show that the combination of factors and their levels of A2B3C3 i.e. the bonding done at a temperature of 475°C with a pressure of 10 MPa and time for 20 minutes yielded the optimum i.e. maximum bonding strength. Finally, ANOVA results indicated that all three process parameters significantly affected the bonding strength with a maximum contribution from the bonding temperature (85.93%), followed by bonding time (12.6%) and bonding pressure (1.48%). It is also observed that the bonding strength of the diffusion bonding process can be improved effectively through this approach.

Simulation study on the influences of the bonding parameters on the warpage of chip-on-glass module with nonconductive film

2009 ◽  
Vol 131 (4) ◽  
Author(s):  
Jianhua Zhang ◽  
Fang Yuan ◽  
Jinsong Zhang
Keyword(s):  
Temperature Difference ◽  
High Reliability ◽  
Chip Thickness ◽  
Structure Design ◽  
Bonding Process ◽  
Large Temperature ◽  
Substrate Thickness ◽  
Bonding Pressure ◽  
Bonding Force ◽  
Bonding Parameters

Nonconductive film (NCF) interconnection technology is now being used for the ultrafine pitch interconnections in chip-on-glass (COG) packaging. In comparison to traditional anisotropic conductive film (ACF) technology, NCF can reach less than 10μm ultrafine pitch interconnection, while ACF just reaches the limit of 30μm. For NCF interconnection technology used in COG bonding, it needs a higher bonding pressure and temperature than those in ACF bonding, so the warpage is very important for the reliability of the package. In this paper, an exploring study investigated the effects of the structure design and bonding process on the warpage in a COG module. The warpage increased linearly with the increase in bonding head temperature and bonding force, but it decreased with the increase in substrate temperature, substrate thickness, and chip thickness. The large temperature difference between the substrate and chip produced a high thermal stress, and the large bonding force generated a high mechanical stress. The thermal and mechanical stresses were the reasons for warpage in a COG module. For the high reliability, the design and bonding process to the COG module with NCF should adopt a thick substrate, an appropriate bonding force, and a low temperature difference.

Failure Analysis on Power Trench MOSFET Devices with Copper Wire Bonds

2011 ◽  
Author(s):  
Huixian Wu ◽  
Arthur Chiang ◽  
David Le ◽  
Win Pratchayakun
Keyword(s):  
Failure Analysis ◽  
Copper Wire ◽  
New Technology ◽  
Analytical Techniques ◽  
Wire Bonding ◽  
Bonding Process ◽  
Wire Bonds ◽  
Copper Wire Bonding ◽  
Wet Chemical ◽  
Microelectronic Components

Abstract With gold prices steadily going up in recent years, copper wire has gained popularity as a means to reduce cost of manufacturing microelectronic components. Performance tradeoff aside, there is an urgent need to thoroughly study the new technology to allay any fear of reliability compromise. Evaluation and optimization of copper wire bonding process is critical. In this paper, novel failure analysis and analytical techniques are applied to the evaluation of copper wire bonding process. Several FA/analytical techniques and FA procedures will be discussed in detail, including novel laser/chemical/plasma decapsulation, FIB, wet chemical etching, reactive ion etching (RIE), cross-section, CSAM, SEM, EDS, and a combination of these techniques. Two case studies will be given to demonstrate the use of these techniques in copper wire bonded devices.

Sign in / Sign up

Export Citation Format

Share Document