Optimization of Diffusion Bonding Process Parameters of Aluminium AA6061-Fly Ash Composites using Taguchi Method

2017 ◽  
Vol 9 (4) ◽  
Author(s):  
A. Sittaramane ◽  
G. Mahendran
Keyword(s):  
Fly Ash ◽  
Taguchi Method ◽  
Process Parameters ◽  
Diffusion Bonding ◽  
Bonding Strength ◽  
Bonding Temperature ◽  
Bonding Process ◽  
Bonding Pressure ◽  
Bonding Parameters ◽  
Response Table

This paper focused to determine optimal bonding parameters based on Taguchi method for maximizing bonding strength. The experiments were conducted on diffusion bonding machine using aluminium fly ash (AFA) composites. Three bonding parameters such as temperature, pressure and time, each at three levels were examined. Taguchi L27 orthogonal array was used as a design of experiment. The response table and the analysis of variance (ANOVA) were calculated to determine which process parameters significantly affect the bonding strength and also the % contribution of each parameter. The results show that the combination of factors and their levels of A2B3C3 i.e. the bonding done at a temperature of 475°C with a pressure of 10 MPa and time for 20 minutes yielded the optimum i.e. maximum bonding strength. Finally, ANOVA results indicated that all three process parameters significantly affected the bonding strength with a maximum contribution from the bonding temperature (85.93%), followed by bonding time (12.6%) and bonding pressure (1.48%). It is also observed that the bonding strength of the diffusion bonding process can be improved effectively through this approach.

A process analysis for microchannel deformation and bonding strength by in-mold bonding of microfluidic chips

2015 ◽  
Vol 35 (3) ◽  
pp. 267-275 ◽  
Author(s):  
Chunpeng Chu ◽  
Bingyan Jiang ◽  
Laiyu Zhu ◽  
Fengze Jiang
Keyword(s):  
Bonding Strength ◽  
Process Analysis ◽  
Bonding Temperature ◽  
Bonding Time ◽  
Production Cycle ◽  
Microfluidic Chips ◽  
Bonding Pressure ◽  
Bonding Parameters ◽  
Bonding Technology ◽  
Assembly Technology

Abstract A novel combination of thermal bonding and in-mold assembly technology was created to produce microfluidic chips out of polymethylmethacrylate (PMMA), which is named “in-mold bonding technology”. In-mold bonding experiments of microfluidic chips were carried out to investigate the influences of bonding process parameters on the deformation and bonding strength of microchannels. The results show that bonding temperature has the greatest impact on the deformation of microchannels, while bonding pressure and bonding time have more influence on deformation in height than in top width. Considering the bonding strength, the bonding temperature and the bonding pressure have more impact than the bonding time. The time is crucial for the sealing of the chips. By setting the bonding parameters reasonably, the microchannel deformation is <10%, while the bonding strength of the chips is 350 kPa. The production cycle of the chip is reduced to <5 min.

Optimization of Ti-6Al-4V/AISI304 diffusion bonding process parameters using RSM and PSO algorithm

2019 ◽  
Vol 15 (6) ◽  
pp. 1037-1052
Author(s):  
A. Arun Negemiya ◽  
S. Rajakumar ◽  
V. Balasubramanian
Keyword(s):  
Process Parameters ◽  
Diffusion Bonding ◽  
Bonding Temperature ◽  
Empirical Relationship ◽  
Pso Algorithm ◽  
Holding Time ◽  
Main Role ◽  
Bonding Pressure ◽  
Content Type ◽  
Lap Shear

Purpose The purpose of this paper is to develop an empirical relationship for predicting the strength of titanium to austenitic stainless steel fabricated by diffusion bonding (DB) process. Process parameters such as bonding pressure, bonding temperature and holding time play the main role in deciding the joint strength. Design/methodology/approach In this study, three-factors, five-level central composite rotatable design was used to conduct the minimum number of experiments involving all the combinations of parameters. Findings An empirical relationship was developed to predict the lap shear strength (LSS) of the joints incorporating DB process parameters. The developed empirical relationship was optimized using particle swarm optimization (PSO). The optimized value discovered through PSO was compared with the response surface methodology (RSM). The joints produced using bonding pressure of 14 MPa, bonding temperature of 900°C and holding time of 70 min exhibited a maximum LSS of 150.51 MPa in comparison with other joints. This was confirmed by constructing response graphs and contour plots. Originality/value Optimizing the DB parameters using RSM and PSO, PSO gives an accurate result when compared with RSM. Also, a sensitivity analysis is carried out to identify the most influencing parameter for the DB process.

Efficient Diffusion Bonding between BSCCO Superconducting Multifilamentary Tapes

2008 ◽  
Vol 580-582 ◽  
pp. 295-298
Author(s):  
Gui Sheng Zou ◽  
Yan Ju Wang ◽  
Ai Ping Wu ◽  
Hai Lin Bai ◽  
Nai Jun Hu ◽  
...  
Keyword(s):  
High Temperature ◽  
Diffusion Bonding ◽  
New Technology ◽  
Bonding Temperature ◽  
Interface Bonding ◽  
Bonding Pressure ◽  
Bonding Parameters ◽  
Efficient Diffusion ◽  
Bonding Technology ◽  
Multifilamentary Tapes

To improve the joining efficiency of Bi-Sr-Ca-Cu-O ( BSCCO) superconducting tapes, a new diffusion bonding technology with a direct uniaxial pressing at high temperature was developed to join 61-filament tapes. It was observed that bonding parameters such as bonding pressure and holding time, significantly affected the critical current ratio (CCRo). A peak CCRo value of 89 % for the lap-joined tapes was achieved at 3 MPa for 2 h when bonding temperature was 800 °C. Compared with the conventional diffusion bonding technology, this new technology remarkably shortened the fabrication period and improved the superconductivity of the joints. The bonding interface and microstructures of the joints were evaluated and correlated to the CCRo. An uniaxial pressing at high temperature was beneficial to interface bonding, and there was an optimal pressure value for the CCRo.

scholarly journals Investigation on Processing Maps of Diffusion Bonding Process Parameters for Ti-6Al-4 V/AISI304 Dissimilar Joints

2021 ◽  
Vol 2021 ◽  
pp. 1-9
Author(s):  
A. Arun Negemiya ◽  
A. N. Shankar ◽  
B. Guruprasad ◽  
B. Prakash ◽  
S. Dineshkumar ◽  
...  
Keyword(s):  
Process Parameters ◽  
Diffusion Bonding ◽  
Bonding Temperature ◽  
Dissimilar Materials ◽  
Processing Maps ◽  
Dissimilar Joints ◽  
Bonding Pressure ◽  
Lap Shear ◽  
Titanium Surfaces ◽  
Process Factors

The diffusion bonding (DB) method is used in this investigation to connect high-temperature dissimilar materials. The existence of difficult-to-remove oxide coatings on the titanium surfaces, as well as the arrangement of breakable metallic interlayers and oxide enclosures inside the bond region, provides the most significant challenges during the transition from AISI304 to Ti-6Al-4V alloying. In addition, an effort was made to advance DB processing maps for the operational connection of Ti-6Al-4V to AISI304 alloys to improve their performance. Joints had been created by combining several process factors, such as bonding temperature (T), bonding pressure (P), and holding time (t), to create diverse designs. Based on the findings, database processing maps were created. This set of processing maps may be used as a rough guideline for selecting appropriate DB process parameters for generating virtuous excellent bonds between Ti-6Al-4V and AISI304 alloys. The maximum lap shear strength (LSS) was achieved at 800°C, 15 MPa, and 45 min.

Vacuum Adhesive Bonding and Stress Isolation for MEMS Resonant Pressure Sensor Package

2011 ◽  
Vol 694 ◽  
pp. 896-900 ◽  
Author(s):  
Yu Xin Li ◽  
De Yong Chen ◽  
Jun Bo Wang
Keyword(s):  
Pressure Sensor ◽  
Bonding Strength ◽  
Adhesive Bonding ◽  
Thermal Stresses ◽  
Time Pressure ◽  
Bonding Temperature ◽  
Bonding Process ◽  
Temperature Drift ◽  
Stress Isolation ◽  
Sensor Package

This paper presents a method of low temperature adhesive bonding and stress isolation for MEMS resonant pressure sensor hermetic packaging using non-photosensitive benzo-cyclo-butene (BCB) from Dow Co. According to the bonding process, pre-bake time, pumping time, pressure placed on the sensor and the thickness of crosslink layer are the most important factors. Stress isolation is designed to minimize thermal stresses to the resonant pressure sensor package. Experimental results show that this bonding process is a viable for MEMS resonant pressure sensor with the bonding temperature below 250°C, measured bonding strength more than 30MPa, the temperature drift less than 0.05%/°C in the range of -40°C to 70°C(10% of that without stress isolation), and the bonding strength maintains well after thermal treatments, handling, bench testing and implantations.

Low Temperature Anodic Bonding for MEMS Applications

2002 ◽  
Author(s):  
J. Wei ◽  
Z. P. Wang ◽  
L. Wang ◽  
G. Y. Li ◽  
Z. Q. Mo
Keyword(s):  
Low Temperature ◽  
Bonding Strength ◽  
Transition Period ◽  
Bonding Temperature ◽  
Testing Machine ◽  
Acoustic Microscopy ◽  
Anodic Bonding ◽  
Dominant Factor ◽  
Glass Wafer ◽  
Bonding Parameters

In this paper, anodic bonding between silicon wafer and glass wafer (Pyrex 7740) has been successfully achieved at low temperature. The bonding strength is measured using a tensile testing machine. The interfaces are examined and analyzed by scanning acoustic microscopy (SAM), scanning electron microscopy (SEM) and secondary ion mass spectrometry (SIMS). Prior to bonding, the wafers are cleaned in RCA solutions, and the surfaces become hydrophilic. The effects of the bonding parameters, such as bonding temperature, voltage, bonding time and vacuum condition, on bonding quality are investigated using Taguchi method, and the feasibility of bonding silicon and glass wafers at low temperature is explored. The bonding temperature used ranges from 200 °C to 300 °C. The sensitivity of the bonding parameters is analyzed and it is found that the bonding temperature is the dominant factor for the bonding process. Therefore, the effects of bonding temperature are investigated in detail. High temperatures cause high ion mobility and bonding current density, resulting in the short transition period to the equilibrium state. Almost bubble-free interfaces have been obtained. The bonded area increases with increasing the bonding temperature. The unbonded area is less than 1.5% within the whole wafer for bonding temperature between 200 °C to 300 °C. The bonding strength is higher than 10 MPa, and increases with the bonding temperature. Fracture mainly occurs inside the glass wafer other than in the interface when the bonding temperature is higher than 225 °C. SIMS results show that the chemical bonds of Si-O form in the interface. Higher bonding temperature results in more oxygen migration to the interface and more Si-O bonds. The bonding mechanisms consist of hydrogen bonding and Si-O chemical reaction.

scholarly journals Prediction of Tensile Strength and Deformation of Diffusion Bonding Joint for Inconel 718 Using Deep Neural Network

Metals ◽  
2020 ◽  
Vol 10 (9) ◽  
pp. 1266 ◽  
Author(s):  
Han Mei ◽  
Lihui Lang ◽  
Xiaoxing Li ◽  
Hasnain Ali Mirza ◽  
Xiaoguang Yang
Keyword(s):  
Neural Network ◽  
Tensile Strength ◽  
Diffusion Bonding ◽  
Inconel 718 ◽  
Deep Neural Network ◽  
Bonding Temperature ◽  
Bonding Pressure ◽  
Bonding Performance ◽  
Strength And Deformation ◽  
Deformation Ratio

Due to the acceptable high-temperature deformation resistance of Inconel 718, its welding parameters such as bonding temperature and pressure are inevitably higher than those of general metals. As a result of the existing punitive processing environment, it is essential to control the deformation of parts while ensuring the bonding performance. In this research, diffusion bonding experiments based on the Taguchi method (TM) are conducted, and the uniaxial tensile strength and deformation ratio of the experimental joints are measured. According to experimental data, a deep neural network (DNN) was trained to characterize the nonlinear relationship between the diffusion bonding process parameters and the diffusion bonding strength and deformation ratio, where the overall correlation coefficient came out to be 0.99913. The double-factors analysis of bonding temperature–bonding pressure based on the prediction results of the DNN shows that the temperature increment of the diffusion bonding of Inconel 718 significantly increases the deformation ratio of the diffusion bonding joints. Therefore, during the multi-objective optimization of the bonding performance and deformation of components, priority should be given to optimizing the bonding pressure and duration only.

Optimization of Process Parameters of Diffusing Bonding of Titanium with Titanium and Titanium with Copper

2013 ◽  
Vol 856 ◽  
pp. 153-158
Author(s):  
Kasigavi Chandrappa ◽  
Joel Hemanth
Keyword(s):  
Applied Stress ◽  
Diffusion Bonding ◽  
Bonding Temperature ◽  
Bonding Process ◽  
Micro Hardness ◽  
Hardness Testing ◽  
Cu Alloy ◽  
Optimization Of Process Parameters ◽  
Different Temperatures ◽  
Through Diffusion

The diffusion bonding of Ti to Ti, Ti-Cu alloy at different temperatures ranging from 673 K to 923 K under an applied stress of 100 MPa for 1 h was studied. The observation of the microstructure reveals that sound joints between the Ti-Ti and dissimilar titanium/Copper metals sheet were successfully joined by diffusion bonding process. Ti-Cu alloy without any pores or cracks can be achieved through diffusion bonding at temperatures over 873 K under the applied stress of 100 MPa for 1 h. The bond is composed of the zones, and its width increases with the increase of bonding temperature. The Micro hardness at the interface of joints bonded under different conditions was evaluated through Micro hardness testing and the fracture mode was analyzed by SEM observation.

Bonding Parameters of Anisotropic Conductive Adhesive Film and Peeling Strength

2005 ◽  
Vol 297-300 ◽  
pp. 918-926 ◽  
Author(s):  
Xu Chen ◽  
Jun Zhang ◽  
Chunlei Jiao ◽  
Yan Min Liu
Keyword(s):  
High Temperature ◽  
Adhesive Strength ◽  
Bonding Temperature ◽  
Curing Time ◽  
Post Processing ◽  
Bonding Pressure ◽  
Adhesive Film ◽  
Bonding Parameters ◽  
Anisotropic Conductive Adhesive ◽  
Peeling Strength

The effects of different bonding parameters-temperature, pressure, curing time, bonding temperature ramp and post-processing on the adhesive strengths of Anisotropic Conductive Adhesive Film (ACF) interconnection were investigated. The test results showed the adhesive strength increased as the bonding temperature increase. The curing time had great influence on the adhesive strength of ACF joints. The adhesive strengths increased as the bonding pressure increasing, but decreased if the bonding pressure was over 0.25MPa. The effects of different Teflon thickness on the pressure header and post-processing on adhesive strengths performance of ACF joints were studied. It was shown that the 90o peeling strength became deteriorated as the Teflon thickness increase. Different post-processing conditions showed that the specimens kept in 120oC chamber for 30 minutes had the best performance of the ACF interconnection. The environmental experiments of the thermal cycling (-40 - 125oC) and the high temperature/humidity (85oC, 85%RH) aging were used to evaluate the reliability of the specimens with different bonding parameters. It was shown that the high temperature/humidity was the harshest condition to the ACF bonding. The optimum bonding parameters were determined to obtain better peeling strength.

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