Study on the Glass Silicon Anodic Direct Bonding Parameters

2016 ◽  
Vol 1 (1) ◽  
pp. 71
Author(s):  
Li Jia ◽  
Guo Hao ◽  
Guo Zhiping ◽  
Miao Shujing ◽  
Wang Jingxiang
Keyword(s):  
Experimental Study ◽  
Wafer Bonding ◽  
Bonding Temperature ◽  
Bonding Process ◽  
Bonding Time ◽  
Experimental Results ◽  
Bonding Quality ◽  
Mems Packaging ◽  
Bonding Parameters ◽  
Test Platform

<p>By MEMS packaging test platform for bonding process of bonding temperature and bonding time, and test silicon specifications experimental study. Experimental results indicate that when the bonding voltage of 1200V, bonding temperature of 445<sup>0</sup>C to 455<sup>0</sup>C, bonding time is 60s,the void fraction is less than 5%.Glass and silicon wafer bonding quality can achieve the best. The experimental results in order to improve the glass silicon bonding quality provide the basis.</p>

scholarly journals Research on the Glass Silicon Anodic Direct Bonding Parameters

2015 ◽  
Vol 16 (2) ◽  
pp. 291
Author(s):  
Jia Li ◽  
Guo Hao ◽  
Guo Zhiping ◽  
Miao Shujing
Keyword(s):  
Wafer Bonding ◽  
Bonding Temperature ◽  
Bonding Time ◽  
Anodic Bonding ◽  
Bonding Quality ◽  
Mems Packaging ◽  
Bonding Parameters ◽  
Test Platform ◽  
Wafer Size

<p>By MEMS packaging test platform for bonding process of bonding temperature and bonding time,and test silicon specifications experimental study.Firstly,according to the anodic bonding principle,the main factors to detemine the effect of bonding quality.Secodly,change the bonding temperature,bonding time,and test wafer size and other parameters,glass silicon bonding contrast test.Finally,the calculation and analysis of comparative test of each group is bonded porosity,summanrized the factors that affect the quality of the bonding and bonding to achieve the best results in the bonding conditions.Experimental results indicate that when the bonding voltage of 1200V,bonding temperature of 445-455c,bonding time is 60s,the void fractin is less than 5%.Glass and Silicon wafer bonding quality can achieve the best. The experimental results in order to improve the glass silicon bonding quaity provides the basis.</p>

Low Temperature Wafer Level Bonding Using Benzocyclobutene Adhesive Polymers

2012 ◽  
Vol 2012 (DPC) ◽  
pp. 1-24
Author(s):  
Michael Gallagher ◽  
Jong-Uk Kim ◽  
Eric Huenger ◽  
Kai Zoschke ◽  
Christina Lopper ◽  
...  
Keyword(s):  
Low Temperature ◽  
Wafer Bonding ◽  
Flip Chip ◽  
Bonding Temperature ◽  
Bonding Process ◽  
Curing Temperature ◽  
Wafer Level ◽  
Mechanical Adhesion ◽  
3D Stacking ◽  
Dry Etch

3D stacking, one of the 3D integration technologies using through silicon vias (TSVs), is considered as a desirable 3D solution due to its cost effectiveness and matured technical background. For successful 3D stacking, precisely controlled bonding of the two substrates is necessary, so that various methods and materials have been developed over the last decade. Wafer bonding using polymeric adhesives has advantages. Surface roughness, which is critical in direct bonding and metal-to-metal bonding, is not a significant issue, as the organic adhesive can smooth out the unevenness during bonding process. Moreover, bonding of good quality can be obtained using relatively low bonding pressure and low bonding temperature. Benzocyclobutene (BCB) polymers have been commonly used as bonding adhesives due to their relatively low curing temperature (~250 °C), very low water uptake (&lt;0.2%), excellent planarizing capability, and good affinity to Cu metal lines. In this study, we present wafer bonding with BCB at various conditions. In particular, bonding experiments are performed at low temperature range (180 °C ~ 210 °C), which results in partially cured state. In order to examine the effectiveness of the low temperature process, the mechanical (adhesion) strength and dimensional changes are measured after bonding, and compared with the values of the fully cured state. Two different BCB polymers, dry-etch type and photo type, are examined. Dry etch BCB is proper for full-area bonding, as it has low degree of cure and therefore less viscosity. Photo-BCB has advantages when a pattern (frame or via open) is to be structured on the film, since it is photoimageable (negative tone), and its moderate viscosity enables the film to sustain the patterns during the wafer bonding process. The effect of edge beads at the wafer rim area and the soft cure (before bonding) conditions on the bonding quality are also studied. Alan/Rey ok move from Flip Chip and Wafer Level Packaging 1-6-12.

A process analysis for microchannel deformation and bonding strength by in-mold bonding of microfluidic chips

2015 ◽  
Vol 35 (3) ◽  
pp. 267-275 ◽  
Author(s):  
Chunpeng Chu ◽  
Bingyan Jiang ◽  
Laiyu Zhu ◽  
Fengze Jiang
Keyword(s):  
Bonding Strength ◽  
Process Analysis ◽  
Bonding Temperature ◽  
Bonding Time ◽  
Production Cycle ◽  
Microfluidic Chips ◽  
Bonding Pressure ◽  
Bonding Parameters ◽  
Bonding Technology ◽  
Assembly Technology

Abstract A novel combination of thermal bonding and in-mold assembly technology was created to produce microfluidic chips out of polymethylmethacrylate (PMMA), which is named “in-mold bonding technology”. In-mold bonding experiments of microfluidic chips were carried out to investigate the influences of bonding process parameters on the deformation and bonding strength of microchannels. The results show that bonding temperature has the greatest impact on the deformation of microchannels, while bonding pressure and bonding time have more influence on deformation in height than in top width. Considering the bonding strength, the bonding temperature and the bonding pressure have more impact than the bonding time. The time is crucial for the sealing of the chips. By setting the bonding parameters reasonably, the microchannel deformation is <10%, while the bonding strength of the chips is 350 kPa. The production cycle of the chip is reduced to <5 min.

Advances in Wire Bonding Technology for Overhang Applications

2016 ◽  
Vol 2016 (1) ◽  
pp. 000456-000462 ◽  
Author(s):  
Aashish Shah ◽  
Gary Schulze ◽  
Nestor Mendoza ◽  
J.H. Yang ◽  
Rob Ellenberg ◽  
...  
Keyword(s):  
Bonding Temperature ◽  
Wire Bonding ◽  
Bonding Process ◽  
Experimental Results ◽  
Substrate Thickness ◽  
Element Analysis ◽  
Bonding Performance ◽  
Ball Bonding ◽  
Die Deflection ◽  
Die Thickness

Abstract Wire bonding is the most popular interconnect technology and the workhorse of the semiconductor packaging industry. Wire bonding is widely used for 3D packaging in which multiple dies are often stacked vertically in a ‘stacked die’ configuration. In such packages, one or more dies may be unsupported in an ‘overhang’ (e.g. cantilever beam) configuration. Wire bonding on an overhang die causes die deflection. If not optimized, it may lead to improper ball shape, inconsistent looping, pad crack and die crack issues. Therefore, careful process optimization is needed to have the best outcome in wire bonding performance. This optimization is often tedious and time-consuming. Moreover, recent trends towards minimizing package size (e.g. ultra-thin dies) and increasing number of die stacks add to the challenges of optimizing a wire bonding process for overhang devices. This paper examines the challenges of wire bonding on overhang devices. Finite element analysis (FEA) of overhang devices is presented. Die deflection data obtained from the FEA correlates well with the experimental results obtained on the ball bonder. The FEA results show that die deflection increases significantly with decreasing die thickness and increasing overhang distance. Other factors such as substrate thickness, and bonding temperature also effect die deflection, although less significantly than die thickness and overhang distance. Various considerations for optimizing a ball bonding process on overhang devices are discussed. Experimental results of ball bonding optimization on 50 μm and 75 μm thick overhang devices with different overhang configurations are presented.

Nanoindentation Approach for Evaluation of Process Parameters Effect on the Strength of Bonded Au Ball Bonds

2010 ◽  
Vol 148-149 ◽  
pp. 1129-1132
Author(s):  
Shahrum Abdullah ◽  
Mohd Nubli Zulkifli ◽  
A. Jalar
Keyword(s):  
Process Parameters ◽  
Wire Bonding ◽  
Bonding Process ◽  
Bonding Time ◽  
Nanoindentation Test ◽  
Ultrasonic Power ◽  
Bonding Force ◽  
Bonding Parameters ◽  
Ball Bonds ◽  
Geometry Measurement

The nanoindentation test and geometry measurement have been conducted to evaluate the hardness and geometry changes of bonded Au ball bonds towards the changes of the selected wire bonding parameters namely bonding power, bonding time and bonding force. Three indentations were made on the bonded ball bonds to evaluate the variation of hardness properties with the location of indentation. It was noted that the increase of bonding or ultrasonic power will increase the hardness value for the indentations 1 and 3 located at the periphery of bonded ball bonds. The increase of bonding power also increased the deformation of bonded ball bonds. It was also shown that the increment of bonding time will increase the hardness value across the bonded ball bonds in almost even distribution. The application of the bonding force in the wire bonding process has the least effect on the hardness and geometry changes on the bonded ball bonds.

scholarly journals High-Temperature Diffusion Bonding of Ti–6Al–4V and Super-Duplex Stainless Steel Using a Cu Interlayer Embedded with Alumina Nanoparticles

2020 ◽  
Vol 4 (1) ◽  
pp. 3 ◽  
Author(s):  
Kavian O. Cooke ◽  
Anthony Richardson ◽  
Tahir I. Khan ◽  
Muhammad Ali Shar
Keyword(s):  
Stainless Steel ◽  
Duplex Stainless Steel ◽  
Intermetallic Compounds ◽  
Bonding Temperature ◽  
Bonding Time ◽  
Alumina Nanoparticles ◽  
Al2o3 Nanoparticles ◽  
Super Duplex Stainless Steel ◽  
Bonding Parameters ◽  
Cu Interlayer

In this study, Ti–6Al–4V alloy was diffusion bonded to super-duplex stainless steel (SDSS) using an electrodeposited Cu interlayer containing alumina nanoparticles to determine the effects of bonding parameters on the microstructural evolution within the joint region. The results of the study showed that the homogeneity of the joint is affected by the bonding time and bonding temperature. The results also showed that when a Cu/Al2O3 interlayer is used, Ti–6Al–4V alloy can be successfully diffusion bonded to SDSS at temperatures above 850 °C. The combination of longer bonding time and high bonding temperature leads to the formation of various intermetallic compounds within the interface. However, the presence of the Al2O3 nanoparticles within the interface causes a change in the volume, size, and shape of the intermetallic compounds formed by pinning grain boundaries and restricting grain growth of the interlayer. The variation of the chemical composition and hardness across the bond interface confirmed a better distribution of hard phases within the joint center when a Cu/Al2O3 interlayer was used.

Optimization of Diffusion Bonding Process Parameters of Aluminium AA6061-Fly Ash Composites using Taguchi Method

2017 ◽  
Vol 9 (4) ◽  
Author(s):  
A. Sittaramane ◽  
G. Mahendran
Keyword(s):  
Fly Ash ◽  
Taguchi Method ◽  
Process Parameters ◽  
Diffusion Bonding ◽  
Bonding Strength ◽  
Bonding Temperature ◽  
Bonding Process ◽  
Bonding Pressure ◽  
Bonding Parameters ◽  
Response Table

This paper focused to determine optimal bonding parameters based on Taguchi method for maximizing bonding strength. The experiments were conducted on diffusion bonding machine using aluminium fly ash (AFA) composites. Three bonding parameters such as temperature, pressure and time, each at three levels were examined. Taguchi L27 orthogonal array was used as a design of experiment. The response table and the analysis of variance (ANOVA) were calculated to determine which process parameters significantly affect the bonding strength and also the % contribution of each parameter. The results show that the combination of factors and their levels of A2B3C3 i.e. the bonding done at a temperature of 475°C with a pressure of 10 MPa and time for 20 minutes yielded the optimum i.e. maximum bonding strength. Finally, ANOVA results indicated that all three process parameters significantly affected the bonding strength with a maximum contribution from the bonding temperature (85.93%), followed by bonding time (12.6%) and bonding pressure (1.48%). It is also observed that the bonding strength of the diffusion bonding process can be improved effectively through this approach.

Effects of Bonding Process Parameters on Wafer-to-Wafer Alignment Accuracy in Benzocyclobutene (BCB) Dielectric Wafer Bonding

2005 ◽  
Vol 863 ◽  
Author(s):  
F. Niklaus ◽  
R.J. Kumar ◽  
J.J. McMahon ◽  
J. Yu ◽  
T. Matthias ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Layer Thickness ◽  
Wafer Bonding ◽  
Three Dimensional ◽  
Bonding Process ◽  
Alignment Accuracy ◽  
Wafer Level ◽  
Bonding Parameters ◽  
Wafer Pair ◽  
The Impact

AbstractWafer-level three-dimensional (3D) integration is an emerging technology to increase the performance and functionality of integrated circuits (ICs). Aligned wafer-to-wafer bonding with dielectric polymer layers (e.g., benzocyclobutene (BCB)) is a promising approach for manufacturing of 3D ICs, with minimum bonding impact on the wafer-to-wafer alignment accuracy essential. In this paper we investigate the effects of thermal and mechanical bonding parameters on the achievable post-bonding wafer-to-wafer alignment accuracy for polymer wafer bonding with 200 mm diameter wafers. Our baseline wafer bonding process with softbaked BCB (∼35% cross-linked) has been modified to use partially cured (∼ 43% crosslinked) BCB. The partially cured BCB layer does not reflow during bonding, minimizing the impact of inhomogeneities in BCB reflow under compression and/or slight shear forces at the bonding interface. As a result, the non-uniformity of the BCB layer thickness after wafer bonding is less than 0.5% of the nominal layer thickness and the wafer shift relative to each other during the wafer bonding process is less than 1 μm (average) for 200 mm diameter wafers. The critical adhesion energy of a bonded wafer pair with the partially cured BCB wafer bonding process is similar to that with soft-baked BCB.

scholarly journals Experimental study of the $ \gamma p \rightarrow K^{0}\Sigma^{+}$, $ \gamma n \rightarrow K^{0} \Lambda$, and $ \gamma n \rightarrow K^{0} \Sigma^{0}$ reactions at the Mainz Microtron

2019 ◽  
Vol 55 (11) ◽  
Author(s):  
C. S. Akondi ◽  
K. Bantawa ◽  
D. M. Manley ◽  
S. Abt ◽  
P. Achenbach ◽  
...  
Keyword(s):  
Experimental Study ◽  
Cross Sections ◽  
Differential Cross ◽  
Legendre Polynomials ◽  
Neutral Kaon ◽  
Experimental Results ◽  
Differential Cross Sections ◽  
Theoretical Predictions ◽  
Photoproduction Reactions ◽  
Insight Into

Abstract.This work measured $ \mathrm{d}\sigma/\mathrm{d}\Omega$dσ/dΩ for neutral kaon photoproduction reactions from threshold up to a c.m. energy of 1855MeV, focussing specifically on the $ \gamma p\rightarrow K^0\Sigma^+$γp→K0Σ+, $ \gamma n\rightarrow K^0\Lambda$γn→K0Λ, and $ \gamma n\rightarrow K^0 \Sigma^0$γn→K0Σ0 reactions. Our results for $ \gamma n\rightarrow K^0 \Sigma^0$γn→K0Σ0 are the first-ever measurements for that reaction. These data will provide insight into the properties of $ N^{\ast}$N* resonances and, in particular, will lead to an improved knowledge about those states that couple only weakly to the $ \pi N$πN channel. Integrated cross sections were extracted by fitting the differential cross sections for each reaction as a series of Legendre polynomials and our results are compared with prior experimental results and theoretical predictions.

scholarly journals Thermoplastic Elastomer (TPE)–Poly(Methyl Methacrylate) (PMMA) Hybrid Devices for Active Pumping PDMS-Free Organ-on-a-Chip Systems

Biosensors ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 162
Author(s):  
Mathias Busek ◽  
Steffen Nøvik ◽  
Aleksandra Aizenshtadt ◽  
Mikel Amirola-Martinez ◽  
Thomas Combriat ◽  
...  
Keyword(s):  
Methyl Methacrylate ◽  
Drug Testing ◽  
Low Cost ◽  
Thermoplastic Elastomer ◽  
Bonding Process ◽  
Cell Alignment ◽  
Poly Methyl Methacrylate ◽  
Bonding Parameters ◽  
Organ On A Chip ◽  
Hybrid Devices

Polydimethylsiloxane (PDMS) has been used in microfluidic systems for years, as it can be easily structured and its flexibility makes it easy to integrate actuators including pneumatic pumps. In addition, the good optical properties of the material are well suited for analytical systems. In addition to its positive aspects, PDMS is well known to adsorb small molecules, which limits its usability when it comes to drug testing, e.g., in organ-on-a-chip (OoC) systems. Therefore, alternatives to PDMS are in high demand. In this study, we use thermoplastic elastomer (TPE) films thermally bonded to laser-cut poly(methyl methacrylate) (PMMA) sheets to build up multilayered microfluidic devices with integrated pneumatic micro-pumps. We present a low-cost manufacturing technology based on a conventional CO2 laser cutter for structuring, a spin-coating process for TPE film fabrication, and a thermal bonding process using a pneumatic hot-press. UV treatment with an Excimer lamp prior to bonding drastically improves the bonding process. Optimized bonding parameters were characterized by measuring the burst load upon applying pressure and via profilometer-based measurement of channel deformation. Next, flow and long-term stability of the chip layout were measured using microparticle Image Velocimetry (uPIV). Finally, human endothelial cells were seeded in the microchannels to check biocompatibility and flow-directed cell alignment. The presented device is compatible with a real-time live-cell analysis system.

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