Cracking Behavior of Oxide Films under Applied Stress

2011 ◽  
Vol 284-286 ◽  
pp. 671-675
Author(s):  
Si Xian Rao ◽  
Su Ping Yang ◽  
Ji Bin Tong ◽  
Jing Ru Wang
Keyword(s):  
Aqueous Solution ◽  
Oxide Film ◽  
Applied Stress ◽  
Oxide Films ◽  
Cracking Behavior ◽  
Cracking Stress

Cracking behaviors of oxide films on A3, 30CrMnSiA steel under applied stress were investigated in this paper. Theoretical deductions confirmed that critical cracking conditions for oxide films on A3 and 30CrMnSiA steel did exist. Electrochemical tensile experiments in 3%NaCl aqueous solution showed that the critical cracking stress for oxide film on A3 steel is about 220MPa,the critical cracking stress for oxide film on 30CrMnSiA steel is about 80MPa.In-situ dynamic tensile experiments verified the correctness of the experiments results in the electrochemical tensile experiments.

scholarly journals Corrosion Failure of AISI4340 Steel in Oxygen-Containing Aqueous Chloride Solution

2019 ◽  
Vol 2019 ◽  
pp. 1-6
Author(s):  
Ping Zhang ◽  
Yafei Shi ◽  
Hanqing Zhao ◽  
Fulin Zhang ◽  
Guoqiang Zhang ◽  
...  
Keyword(s):  
Aqueous Solution ◽  
Ductile Fracture ◽  
Simultaneous Action ◽  
Corrosion Failure ◽  
Cracking Behavior ◽  
4340 Steel ◽  
Brittle Rupture ◽  
Aqueous Chloride ◽  
Tensile Experiment ◽  
Aisi4340 Steel

Stress corrosion cracking behavior of 4340 steel in oxygen-containing or chloride containing aqueous solution was researched, the tensile experiment results indicated 100°C deaerated distilled water, the rupture of 4340 steel mainly belongs to ductile fracture, the addition of oxygen or chloride would increase the SCC tendency of 4340 steel and transformed the rupture mechanism from ductile fracture to brittle rupture, the existence of oxygen or chloride would decreaseKISCCof 4340 steel in 100°C aqueous solution slightly, the simultaneous action of oxygen and chloride existed, and the simultaneous action would further increase the SCC tendency of 4340 steel in aqueous solution.

scholarly journals Removal of Methylene Blue from Aqueous Solution Using a Polarizable Nanolayered Manganese Oxide Film

2009 ◽  
Vol 25 (2) ◽  
pp. 229-233 ◽  
Author(s):  
Masaharu NAKAYAMA ◽  
Shinya NAKAMOTO ◽  
Chihiro IIDA ◽  
Makoto YOSHIMOTO
Keyword(s):  
Aqueous Solution ◽  
Methylene Blue ◽  
Oxide Film ◽  
Manganese Oxide

Identification of the Initial Oxide Films on 18-8 Stainless Steel in High Temperature Water

CORROSION ◽  
1968 ◽  
Vol 24 (10) ◽  
pp. 336-337 ◽  
Author(s):  
T. NAKAYAMA ◽  
Y. OSHIDA
Keyword(s):  
Stainless Steel ◽  
High Temperature ◽  
Oxide Film ◽  
Oxide Films ◽  
Spinel Type ◽  
High Temperature Water ◽  
Temperature Water

Abstract Initial oxide film formed on 18–8 stainless steel in high temperature water at 300 C (572 F) for 1 hour was identical with corundum type crystals like (Cr, Fe)2O3 alone or its coexistence with α-Fe2O3. On the contrary, the oxide film produced by prolonged oxidation (24 hours) consisted mainly of the spinel type crystals containing nickel.

scholarly journals The cause of the colours shown during the oxidation of metallic copper

1927 ◽  
Vol 115 (772) ◽  
pp. 570-588 ◽  
Keyword(s):  
Thin Films ◽  
Oxide Film ◽  
Copper Oxide ◽  
Cupric Oxide ◽  
Metallic Copper ◽  
Oxide Films ◽  
Copper Surface ◽  
Considerable Time ◽  
Pass Through

During the initial stages of the oxidation of a clean metallic copper surface, and before the normal black colour of cupric oxide is finally attained, bright colours appear which pass through the first and second orders of the series of colours observed and tabulated by Newton as characteristic of thin films of air of increasing thickness. These facts have been known for a considerable time, but though the interference colours of thin films of air and those of the oxide film are produced in the same order, grave doubts have existed as to whether interference was the cause of the colours shown by the copper. This problem has been approached from measurements of the intensity of the light reflected from copper oxide films of known thickness, and the results show that interference is actually the cause of the production of the colour, though the result is complicated by the opacity of the film, the dispersion of the oxide, and the scattering of the light complementary to the film colour when the metal is burnished.

Transient Photoelectrochemical Analysis of the Semiconductor Properties of Oxide Films on Alloys

2014 ◽  
Vol 1015 ◽  
pp. 513-516
Author(s):  
Yu Tan ◽  
Wan Wan Wang ◽  
Sheng Han Zhang ◽  
Ke Xin Liang
Keyword(s):  
Stainless Steel ◽  
High Temperature ◽  
Oxide Film ◽  
Oxide Films ◽  
Analysis Method ◽  
Stainless Steel 316L ◽  
Minute Amount ◽  
High Temperature Water ◽  
Temperature Water ◽  
Semiconductor Properties

A transient photoelectrochemical analysis method is improved to investigate the semiconductor properties of oxide films on stainless steel 316L oxidized in high-temperature water. A minute amount of ZnO was added to the high-temperature water environment to alter the semiconductor properties of the oxide film deposited on stainless steel 316L. Characteristic phases in the oxide were investigated using the improved photoelectrochemical analysis method, and the semiconductor properties of the oxide film on stainless steel 316L suggested the presence of an n-type semiconductor. The photoelectrochemical dephasing angle showed movement of the flat band potential in the negative direction after ZnO addition.

Corrosion Behavior of High-Strength Low-Alloy Steel in High-Temperature Water with Zinc and Aluminum Simultaneous Injection

CORROSION ◽  
10.5006/3545 ◽  
2020 ◽  
Vol 76 (10) ◽  
pp. 918-929
Author(s):  
Shenghan Zhang ◽  
Chenhao Sun ◽  
Yu Tan
Keyword(s):  
Oxide Film ◽  
Corrosion Behavior ◽  
Electrochemical Impedance ◽  
Oxide Films ◽  
High Strength ◽  
Corrosion Current ◽  
Pressurized Water ◽  
Simultaneous Injection ◽  
Primary Water ◽  
Photocurrent Measurement

Oxide films were formed on A508-3 steel in simulated pressurized water reactor (PWR) primary water at the temperature of 561 ± 1 K for 168 h with zinc and/or aluminum injection. Corrosion behaviors of oxide films were analyzed by electrochemical polarization, electrochemical impedance spectroscopy, Mott-Schottky plots, photocurrent measurement, scanning electronic microscopy, and x-ray diffraction. The results showed that zinc and aluminum simultaneous injection technology decreased the corrosion current density, increased the impedance value, made the oxide film more compact, and affected the semiconductor properties of the oxide film. The increase in zinc concentration improved the corrosion resistance to some extent. ZnAl2O4 phase, with extremely low solubility and high stability, had been detected in the oxide film; this substance changed the composition of the oxide film and affected the corrosion behavior of A508-3 steel.

Aqueous Solution Processing of F-Doped SnO2 Transparent Conducting Oxide Films Using a Reactive Tin(II) Hydroxide Nitrate Nanoscale Cluster

2013 ◽  
Vol 25 (20) ◽  
pp. 4080-4087 ◽  
Author(s):  
Athavan Nadarajah ◽  
Matthew E. Carnes ◽  
Matthew G. Kast ◽  
Darren W. Johnson ◽  
Shannon W. Boettcher
Keyword(s):  
Aqueous Solution ◽  
Transparent Conducting Oxide ◽  
Oxide Films ◽  
Solution Processing ◽  
Transparent Conducting

Effects of Environmental Factors on the Electronic Properties of Interfacial Oxide Film on 304L Stainless Steel in High Temperature Pure Water

2004 ◽  
Vol 261-263 ◽  
pp. 919-924 ◽  
Author(s):  
Zhan Peng Lu ◽  
Yo-ichi Takeda ◽  
Tetsuo Shoji
Keyword(s):  
Stainless Steel ◽  
High Temperature ◽  
Oxide Film ◽  
Electronic Properties ◽  
Pure Water ◽  
Oxide Films ◽  
304L Stainless Steel ◽  
Film Properties ◽  
High Temperature Water ◽  
Temperature Water

The electronic properties of the interfacial oxide film formed on 304L stainless steel in high temperature water are investigated by contact electric resistance (CER) measurements. Tests are performed in pure water with a wide range of dissolved oxygen (DO) content at 200, 250, and 288°C. The electrochemical potential (ECP) moves in the noble direction and CER increases when increasing DO. Results show that DO content has a dominant effect on the electronic properties of oxide film. The change of oxide film properties can also be attributed to the variation of the electrochemical potential, which is directly affected by DO content. Critical potentials exist for the formation and reduction of oxide films in high temperature water. Multiple steps are found for the reduction of oxide films due to de-aeration in 200, 250, and 288°C water, implying the presence of multiple-layer interfacial oxide films. The film reduction process is relatively slower than the film formation process. Present results show that even in high purity water, a moderate change of DO content can result in different surface conditions. Dissolved hydrogen has a moderate effect on interfacial surface films in deaerated water. In-situ monitoring of the oxide film properties by CER technique provides information on the interfacial reactions that are related to the SCC behavior of materials in high temperature water environments.

Reaction Sintering Mechanism of Submicrometer Silicon Powder in Nitrogen

1992 ◽  
Vol 271 ◽  
Author(s):  
Yoshiyuki Yasutomi ◽  
Masahisa Sobue ◽  
Jiro Kondo
Keyword(s):  
Oxide Film ◽  
Oxide Films ◽  
High Strength ◽  
Silicon Powder ◽  
Reaction Sintering ◽  
Plasma Arc ◽  
Hollow Shell ◽  
Initial Stage ◽  
Near Net Shape ◽  
Higher Temperature

ABSTRACTKnowing the nitridation mechanism of Si is important to obtain near-net-shape high strength reaction bonded ceramics. In this report, comparison of nitridation mechanism of small spherical Si powder produced by plasma arc method and large faceted Si powder, is discussed on the basis of microstructural analyses by SEM and TEM. From the analyses, nitrogen diffuses through the oxide film of Si powder and forms Si3N4 under the oxide films during the initial stage of sintering. At higher temperature, the oxide film transform into fine Si3N4 grains when heated to the 1350°C. The Si3N4 has morphology of hollow shell and a size, which corresponds to that of the original Si particles.

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