Correlation of Structural and Optical Properties of nc-Ge/a-Si Multilayers Grown by Ion Beam Sputtering

2011 ◽  
Vol 306-307 ◽  
pp. 1300-1303
Author(s):  
Chao Song ◽  
Rui Huang ◽  
Xiang Wang ◽  
Jie Song ◽  
Yan Qing Guo
Keyword(s):  
Room Temperature ◽  
Volume Fraction ◽  
Ion Beam ◽  
Silicon Substrates ◽  
Ion Beam Sputtering ◽  
Raman Scattering Spectroscopy ◽  
Force Microscopy ◽  
Room Temperature Photoluminescence ◽  
Atomic Force ◽  
Beam Sputtering

The nc-Ge/a-Si multilayer structures were fabricated by ion beam sputtering technique on silicon substrates at temperature of 400 °C. Raman scattering spectroscopy, atomic force microscopy (AFM) and room temperature photoluminescence were used to characterize the structure and optical property of the samples. It was found that the nc-Ge/a-Si multilayer sample can be obtained when the Ge sublayer is 3 nm. The room temperature photoluminescence was observed and the luminescent peak is located at 685 nm. Compared with the a-Ge/a-Si film, the intensity of PL of the nc-Ge/a-Si multilayer film becomes stronger due to the higher volume fraction of crystallized component.

The Study on Microstructural and Optical Properties of Nanocrystalline Germanium Films

2010 ◽  
Vol 663-665 ◽  
pp. 324-327
Author(s):  
Chao Song ◽  
Rui Huang
Keyword(s):  
Multilayer Structure ◽  
Room Temperature ◽  
Multilayer Film ◽  
Volume Fraction ◽  
Raman Scattering Spectroscopy ◽  
Force Microscopy ◽  
Room Temperature Photoluminescence ◽  
Atomic Force ◽  
Lower Volume Fraction ◽  
Lower Volume

The germanium film and Ge/Si multilayer structure were fabricated by magnetron sputtering technique on silicon substrate at temperatures of 500°C. Raman scattering spectroscopy measurements reveal that the nanocrystalline Ge occurs in both kinds of samples. Furthermore, from the atomic force microscopy (AFM) results, it is found that the grain size as well as spatially ordering distribution of the nc-Ge can be modulated by the Ge/Si multilayer structure. The room temperature photoluminescence was also observed in the samples. However, compared with that from the nc-Ge film, the intensity of PL from the nc-Ge/a-Si multilayer film becomes weaker, which is attributed to its lower volume fraction of crystallized component.

Topography Evolution of Si (001) Substrate Fabricated by Ar+ Ion Beam Sputter Etching

2004 ◽  
Vol 849 ◽  
Author(s):  
Hyung Seok Kim ◽  
Ju Hyung Suh ◽  
Chan Gyung Park
Keyword(s):  
Surface Morphology ◽  
Incident Angle ◽  
Ion Beam ◽  
Etching Time ◽  
Ion Beam Sputtering ◽  
Ion Energy ◽  
Force Microscopy ◽  
Atomic Force ◽  
Beam Sputtering ◽  
Sputter Etching

ABSTRACTSelf-formed nanopatterns on Si (001) substrates fabricated by ion beam sputter etching were investigated by atomic force microscopy (AFM). The ion beam sputtering was performed with an Ar+ ion beam produced from a Kaufman type ion gun. In order to fabricate the periodic nanoscale patterns on Si surface, the effects of sputter parameters such as ion energy, flux, incident angle and etching time on surface morphology was investigated. As a result, nanometer scale ripples and 3-dimensioal nanodots were formed uniformly after ion beam sputtering. The surface morphology of Si was significantly dependent on incident angle and ion beam flux.

Study on the Surface Quality of Al2O3 Nano-Films by Ion Beam Sputtering Deposition

2011 ◽  
Vol 148-149 ◽  
pp. 54-57
Author(s):  
Xiao Ping Lin ◽  
Yun Dong ◽  
Lian Wei Yang
Keyword(s):  
Surface Quality ◽  
Ion Beam ◽  
Three Dimensional ◽  
Ion Beam Sputtering ◽  
Sputtering Deposition ◽  
Atomic Force ◽  
Beam Sputtering ◽  
Dimensional Growth ◽  
Different Thickness

The Al2O3 nano-films of different thicknesses (1~100nm) were successfully deposited on the monocrystalline Si surface by using ion beam sputtering deposition. The surface topography and the component of nano-films with different thickness were analyzed. The quality of the surface of nano-films was systematically studied. When the films’ thickness increase, the studies by atomic force microscope (AFM), X-ray photoelectron spectrum（XPS） show that the gathering grain continually grows up and transits from acerose cellula by two-dimensional growth to globularity by three-dimensional growth. The elements O, Al and Si were found on the surface of Al2O3 nano-films. With the thickness of the films increasing, the content of Al gradually increases and the intensity peak of Si wears off, the surface quality of the deposited films is ceaselessly improved

Probing the metal gate high k interactions by backside XPS and C-AFM

2011 ◽  
Vol 1336 ◽  
Author(s):  
U. Celano ◽  
T. Conard ◽  
T. Hantschel ◽  
W. Vandervorst
Keyword(s):  
Ion Beam ◽  
Electrical Performance ◽  
Ion Beam Sputtering ◽  
Metal Gate ◽  
Gate Stack ◽  
Conductive Atomic Force Microscopy ◽  
Characterization Methods ◽  
Force Microscopy ◽  
High K ◽  
Beam Sputtering

ABSTRACTThe metal gate high k interaction is one of the dominant processes influencing the electrical performance (Vt, charge accumulation,..) of advanced gate stacks. These interactions are influenced by the entire thermal budget and the presence of reactive elements (on top/ within the material gate) such that relevant measurements can only be performed after a full processing cycle and on a complete gate stack.In such cases the relevant metal gate high k interface is a buried interface located below the metal gate (+ Si cap) and is not accessible for standard characterization methods like x-ray photoemission spectroscopy (XPS) due the limited escape depth of the photoelectrons. Moreover the presence of a conductive metal gate prevents the application of techniques such as conductive atomic force microscopy (C-AFM), to probe the local distribution of the defects, trapping sites and local degradation upon stressing. XPS in combination with layer removal steps like ion beam sputtering will destroy the bonding information and is thus not applicable. Chemical etching of the metal gate stack prior to the XPS measurements requires an extremely precious control of the etching in order to stop 1-2 nm before the high k metal interface.As an alternative we have developed a backside removal approach, that allows us to investigate using techniques such as XPS and C-AFM, the metal gate high k interface.

Surface Properties of Nanoscale Iron Garnet Films

2015 ◽  
Vol 233-234 ◽  
pp. 678-681
Author(s):  
T.B. Kosykh ◽  
A.S. Prosyakov ◽  
A.P. Pyatakov ◽  
Alexander N. Shaposhnikov ◽  
Anatoly R. Prokopov ◽  
...  
Keyword(s):  
Surface Properties ◽  
Scanning Probe Microscopy ◽  
Ion Beam ◽  
Roughness Parameters ◽  
Ion Beam Sputtering ◽  
Garnet Films ◽  
Atomic Force ◽  
Beam Sputtering ◽  
Iron Garnet ◽  
Surface Increase

Surface properties of nanoscale iron garnet films of different compositions prepared by reactive ion beam sputtering were examined by means of scanning probe microscopy. Atomic force microscope images of the film surfaces are represented for the films of different compositions and deposition times. The article presents the dependences of the roughness parameters on the film composition and thickness and on the energy of Ar+ ions by which the substrates were pre-treated. It was shown that the roughness parameters of the films' surface increase with the increase of Ar+ ions energy and the films' thickness.

Structure and Composition of Supported PtCu-LaOx Composite Multi-Layer Membrane Electrode

2011 ◽  
Vol 148-149 ◽  
pp. 822-825 ◽  
Author(s):  
Bin Yang ◽  
Tao Xu
Keyword(s):  
Fuel Cells ◽  
Ion Beam ◽  
Homogeneous Distribution ◽  
Membrane Electrode ◽  
Silicon Substrates ◽  
Membrane Electrodes ◽  
Ion Beam Sputtering ◽  
Beam Sputtering ◽  
Pt Alloy ◽  
Layer Membrane

In order to reduce production cost of Fuel Cells, a new type of Pt/C membrane electrodes -- PtCu-LaOx, LaOx-PtCu and PtCu-LaOx-PtCu composite multi-layer membrane electrodes -- would be raised, in which with developing different membranous layer form dispersed on the surface of carbonaceous or monocrystalline silicon substrates were manufactured by Ion Beam Sputtering technology. Phase composition, micro-area surface topography and elements of these electrodes were analyzed by X-ray Diffraction, Scanning Electron Microscopy combined with Energy Dispersive Spectrometry and Atomic Force Microscope, respectively. It was found that doping La could not only enhance Pt crystallization and decrease Pt grain size but also contribute to Pt(111) preferential orientation growing in the LaOx-PtCu, and that biggish ratio of La(At%) : Pt(At%) in micro-area would be difficult of occurring particles reunion on PtCu-LaOx surface, and that the orientation growing of Pt(200), Pt(220) and Pt(311) would be restrained in PtCu-LaOx and PtCu-LaOx-PtCu, and that the Pt alloy particle exhibited more homogeneous distribution and less size in PtCu-LaOx-PtCu. Our study indicated that these new types of membrane electrodes could be used in Fuel Cells and make Fuel Cells as a new power source for electrical vehicles.

Growth Front Roughening of Room Temperature Deposited Oligomer Thin Films

2000 ◽  
Vol 648 ◽  
Author(s):  
D. Tsamouras ◽  
G. Palasantzas ◽  
J. Th. M. De Hosson ◽  
G. Hadziioannou
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Room Temperature ◽  
Growth Front ◽  
Silicon Substrates ◽  
Height Distribution ◽  
Force Microscopy ◽  
Atomic Force ◽  
Roughness Amplitude ◽  
Non Gaussian

AbstractGrowth front scaling aspects are investigated for PPV-type oligomer thin films vapor- deposited onto silicon substrates at room temperature. For film thickness d~15-300 nm, commonly used in optoelectronic devices, correlation function measurement by atomic force microscopy yields roughness exponents in the range H=0.45±0.04, and an rms roughness amplitude which evolves with film thickness as a power law σ∝ dβ with β=0.28±0.05. The non-Gaussian height distribution and the measured scaling exponents (H and β) suggest a roughening mechanism close to that described by the Kardar-Parisi-Zhang scenario.

scholarly journals Structure-Function Correlative Microscopy of Peritubular and Intertubular Dentine

Materials ◽  
2018 ◽  
Vol 11 (9) ◽  
pp. 1493 ◽  
Author(s):  
Tan Sui ◽  
Jiří Dluhoš ◽  
Tao Li ◽  
Kaiyang Zeng ◽  
Adrian Cernescu ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Volume Fraction ◽  
Ion Beam ◽  
Near Field ◽  
Structural Difference ◽  
Correlative Microscopy ◽  
Mineral Concentration ◽  
Force Microscopy ◽  
Atomic Force ◽  
Backscattered Electron

Peritubular dentine (PTD) and intertubular dentine (ITD) were investigated by 3D correlative Focused Ion Beam (FIB)-Scanning Electron Microscopy (SEM)-Energy Dispersive Spectroscopy (EDS) tomography, tapping mode Atomic Force Microscopy (AFM) and scattering-type Scanning Near-Field Optical Microscopy (s-SNOM) mapping. The brighter appearance of PTD in 3D SEM-Backscattered-Electron (BSE) imaging mode and the corresponding higher grey value indicate a greater mineral concentration in PTD (~160) compared to ITD (~152). However, the 3D FIB-SEM-EDS reconstruction and high resolution, quantitative 2D map of the Ca/P ratio (~1.8) fail to distinguish between PTD and ITD. This has been further confirmed using nanoscale 2D AFM map, which clearly visualised biopolymers and hydroxyapatite (HAp) crystallites with larger mean crystallite size in ITD (32 ± 8 nm) than that in PTD (22 ± 3 nm). Correlative microscopy reveals that the principal difference between PTD and ITD arises primarily from the nanoscale packing density of the crystallites bonded together by thin biopolymer, with moderate contribution from the chemical composition difference. The structural difference results in the mechanical properties variation that is described by the parabolic stiffness-volume fraction correlation function introduced here. The obtained results benefit a microstructure-based mechano-chemical model to simulate the chemical etching process that can occur in human dental caries and some of its treatments.

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