Topography Evolution of Si (001) Substrate Fabricated by Ar+ Ion Beam Sputter Etching

2004 ◽  
Vol 849 ◽  
Author(s):  
Hyung Seok Kim ◽  
Ju Hyung Suh ◽  
Chan Gyung Park
Keyword(s):  
Surface Morphology ◽  
Incident Angle ◽  
Ion Beam ◽  
Etching Time ◽  
Ion Beam Sputtering ◽  
Ion Energy ◽  
Force Microscopy ◽  
Atomic Force ◽  
Beam Sputtering ◽  
Sputter Etching

ABSTRACTSelf-formed nanopatterns on Si (001) substrates fabricated by ion beam sputter etching were investigated by atomic force microscopy (AFM). The ion beam sputtering was performed with an Ar+ ion beam produced from a Kaufman type ion gun. In order to fabricate the periodic nanoscale patterns on Si surface, the effects of sputter parameters such as ion energy, flux, incident angle and etching time on surface morphology was investigated. As a result, nanometer scale ripples and 3-dimensioal nanodots were formed uniformly after ion beam sputtering. The surface morphology of Si was significantly dependent on incident angle and ion beam flux.

Correlation of Structural and Optical Properties of nc-Ge/a-Si Multilayers Grown by Ion Beam Sputtering

2011 ◽  
Vol 306-307 ◽  
pp. 1300-1303
Author(s):  
Chao Song ◽  
Rui Huang ◽  
Xiang Wang ◽  
Jie Song ◽  
Yan Qing Guo
Keyword(s):  
Room Temperature ◽  
Volume Fraction ◽  
Ion Beam ◽  
Silicon Substrates ◽  
Ion Beam Sputtering ◽  
Raman Scattering Spectroscopy ◽  
Force Microscopy ◽  
Room Temperature Photoluminescence ◽  
Atomic Force ◽  
Beam Sputtering

The nc-Ge/a-Si multilayer structures were fabricated by ion beam sputtering technique on silicon substrates at temperature of 400 °C. Raman scattering spectroscopy, atomic force microscopy (AFM) and room temperature photoluminescence were used to characterize the structure and optical property of the samples. It was found that the nc-Ge/a-Si multilayer sample can be obtained when the Ge sublayer is 3 nm. The room temperature photoluminescence was observed and the luminescent peak is located at 685 nm. Compared with the a-Ge/a-Si film, the intensity of PL of the nc-Ge/a-Si multilayer film becomes stronger due to the higher volume fraction of crystallized component.

Study on the Surface Quality of Al2O3 Nano-Films by Ion Beam Sputtering Deposition

2011 ◽  
Vol 148-149 ◽  
pp. 54-57
Author(s):  
Xiao Ping Lin ◽  
Yun Dong ◽  
Lian Wei Yang
Keyword(s):  
Surface Quality ◽  
Ion Beam ◽  
Three Dimensional ◽  
Ion Beam Sputtering ◽  
Sputtering Deposition ◽  
Atomic Force ◽  
Beam Sputtering ◽  
Dimensional Growth ◽  
Different Thickness

The Al2O3 nano-films of different thicknesses (1~100nm) were successfully deposited on the monocrystalline Si surface by using ion beam sputtering deposition. The surface topography and the component of nano-films with different thickness were analyzed. The quality of the surface of nano-films was systematically studied. When the films’ thickness increase, the studies by atomic force microscope (AFM), X-ray photoelectron spectrum（XPS） show that the gathering grain continually grows up and transits from acerose cellula by two-dimensional growth to globularity by three-dimensional growth. The elements O, Al and Si were found on the surface of Al2O3 nano-films. With the thickness of the films increasing, the content of Al gradually increases and the intensity peak of Si wears off, the surface quality of the deposited films is ceaselessly improved

Probing the metal gate high k interactions by backside XPS and C-AFM

2011 ◽  
Vol 1336 ◽  
Author(s):  
U. Celano ◽  
T. Conard ◽  
T. Hantschel ◽  
W. Vandervorst
Keyword(s):  
Ion Beam ◽  
Electrical Performance ◽  
Ion Beam Sputtering ◽  
Metal Gate ◽  
Gate Stack ◽  
Conductive Atomic Force Microscopy ◽  
Characterization Methods ◽  
Force Microscopy ◽  
High K ◽  
Beam Sputtering

ABSTRACTThe metal gate high k interaction is one of the dominant processes influencing the electrical performance (Vt, charge accumulation,..) of advanced gate stacks. These interactions are influenced by the entire thermal budget and the presence of reactive elements (on top/ within the material gate) such that relevant measurements can only be performed after a full processing cycle and on a complete gate stack.In such cases the relevant metal gate high k interface is a buried interface located below the metal gate (+ Si cap) and is not accessible for standard characterization methods like x-ray photoemission spectroscopy (XPS) due the limited escape depth of the photoelectrons. Moreover the presence of a conductive metal gate prevents the application of techniques such as conductive atomic force microscopy (C-AFM), to probe the local distribution of the defects, trapping sites and local degradation upon stressing. XPS in combination with layer removal steps like ion beam sputtering will destroy the bonding information and is thus not applicable. Chemical etching of the metal gate stack prior to the XPS measurements requires an extremely precious control of the etching in order to stop 1-2 nm before the high k metal interface.As an alternative we have developed a backside removal approach, that allows us to investigate using techniques such as XPS and C-AFM, the metal gate high k interface.

Surface Properties of Nanoscale Iron Garnet Films

2015 ◽  
Vol 233-234 ◽  
pp. 678-681
Author(s):  
T.B. Kosykh ◽  
A.S. Prosyakov ◽  
A.P. Pyatakov ◽  
Alexander N. Shaposhnikov ◽  
Anatoly R. Prokopov ◽  
...  
Keyword(s):  
Surface Properties ◽  
Scanning Probe Microscopy ◽  
Ion Beam ◽  
Roughness Parameters ◽  
Ion Beam Sputtering ◽  
Garnet Films ◽  
Atomic Force ◽  
Beam Sputtering ◽  
Iron Garnet ◽  
Surface Increase

Surface properties of nanoscale iron garnet films of different compositions prepared by reactive ion beam sputtering were examined by means of scanning probe microscopy. Atomic force microscope images of the film surfaces are represented for the films of different compositions and deposition times. The article presents the dependences of the roughness parameters on the film composition and thickness and on the energy of Ar+ ions by which the substrates were pre-treated. It was shown that the roughness parameters of the films' surface increase with the increase of Ar+ ions energy and the films' thickness.

The Effects of Ion Energy on Carbon and Tungsten Films Fabricated by Direct Ion Beam Deposition and Ion Beam Sputtering Deposition

1991 ◽  
Vol 223 ◽  
Author(s):  
I. Kataoka ◽  
K. Ito ◽  
N. Hoshi ◽  
T. Yonemitsu ◽  
K. Etoh ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Ion Beam ◽  
Amorphous Structure ◽  
Film Structure ◽  
Ion Beam Sputtering ◽  
Ion Energy ◽  
Sputtering Deposition ◽  
Ion Beam Deposition ◽  
Beam Sputtering ◽  
Beam Deposition

ABSTRACTThe x-ray reflectivity and surface morphology of C/W multilayers fabricated by ion beam sputtering (IBS) method was evaluated. Also the surface roughness and amorphous structure of C and W films fabricated by direct ion beam deposition (DIBD) method were evaluated as a function of ion energy. The reflectivity was measured by the C-K line (4.47nm) and STM was used for surface roughness measurement and root-mean-square value of correlation function of the RHEED pattern was used for evaluation of amorphous structure. The reflectivity of C/W multilayer was about 69% of the theoretical one, and micro-columnar structures were observed from STM images. The film structure and surface roughness of DIBD film were changed with the depositing ion energy. The surface roughness of films becomes smaller as the depositing energy becomes higher in the energy range from 20 to 140eV.

Improved Enhancement Factor for SERS using Broad Ion Beam Induced Self-organized Gold Nanocones

MRS Advances ◽  
2019 ◽  
Vol 4 (11-12) ◽  
pp. 697-703 ◽  
Author(s):  
Bhaveshkumar Kamaliya ◽  
Rakesh G. Mote ◽  
Mohammed Aslam ◽  
Jing Fu
Keyword(s):  
Enhancement Factor ◽  
Incident Angle ◽  
Ion Beam ◽  
Gold Surface ◽  
Vertical Axis ◽  
Ion Beam Sputtering ◽  
Self Organized ◽  
Beam Sputtering ◽  
Surface Enhanced Raman ◽  
Enhanced Raman Scattering

ABSTRACTSparsely distributed and self-organized gold-nanocones are fabricated by broad argon ion beam sputtering on the gold surface with grazing incident angle. The rotation of the sample with respect to the vertical axis has found to influence the morphology of the obtained nanostructures. Ion beam irradiation of the sample leads to formation of nanoripples when the sample is held stationary, otherwise nanocones are formed if the sample is rotated during irradiation. A hybrid gold-nanocone/graphene/gold-nanohole based surface-enhanced Raman scattering (SERS) sensor is proposed and shown to exhibit an enhancement factor of 109 via finite-difference time-domain (FDTD) simulations.

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