Process Parameters Influence on Semi-Fixed Abrasive Tool Wear

2011 ◽  
Vol 325 ◽  
pp. 251-256
Author(s):  
Qian Fa Deng ◽  
Ping Zhao ◽  
Bing Hai Lv ◽  
Ju Long Yuan ◽  
Zhi Wei Wang
Keyword(s):  
Process Parameters ◽  
Influencing Factor ◽  
Single Crystal Silicon ◽  
Abrasive Tool ◽  
Abrasive Machining ◽  
Advanced Ceramics ◽  
Crystal Silicon ◽  
Abrasive Tools ◽  
Ceramics Industry ◽  
Fixed Abrasive

Abrasive machining is an important process for the manufacturing of advanced ceramics. The demand for advanced ceramics with better quality and higher efficiency presents tremendous challenges for abrasive tools in the advanced ceramics industry. The concept of semi-fixed abrasive machining with a newly developed semi-fixed abrasive tool (SFAT) as machining tool is put forward. This paper presents an experimental investigation for SFAT wear into course of machining single crystal silicon with SFAT. Process parameters (water flow, load and velocity) influencing the SFAT wear are analyzed. Influencing factor of SFAT wear in processing course has been clearly demonstrated.

Analysis of Grit Cut Depth in Fixed-Abrasive Diamond Wire Saw Slicing Single Crystal Silicon

2011 ◽  
Vol 175 ◽  
pp. 72-76 ◽  
Author(s):  
Yu Fei Gao ◽  
Pei Qi Ge
Keyword(s):  
Single Crystal ◽  
Process Parameters ◽  
Silicon Crystal ◽  
Single Crystal Silicon ◽  
Feed Speed ◽  
Crystal Silicon ◽  
Wire Saw ◽  
Diamond Wire Saw ◽  
Cut Depth ◽  
Fixed Abrasive

A mathematical model to calculate the grit average cut depth in wire sawing single crystal silicon was founded. So the grit average cut depths were calculated theoretically by choosing different process parameters, and influences of process parameters on grit cut depths of slicing silicon crystal were analyzed. Analysis results indicate that the grit average cut depth relates to the silicon mechanical properties, grit shape and size, wire speed and ingot feed speed, etc. And there is a monotone increasing non-linear correlation between grit average cut depth and the ratio i value of ingot feed speed and wire speed, when the i value is lower, the average grit cut depth is lower.

A novel high-shear and low-pressure grinding method using specially developed abrasive tools

2020 ◽  
Vol 235 (1-2) ◽  
pp. 166-172
Author(s):  
Yebing Tian ◽  
Linguang Li ◽  
Shuo Fan ◽  
Qianjian Guo ◽  
Xiang Cheng
Keyword(s):  
Tangential Force ◽  
Single Crystal Silicon ◽  
Low Pressure ◽  
Grinding Force ◽  
High Shear ◽  
Abrasive Tool ◽  
Crystal Silicon ◽  
Grinding Method ◽  
Grinding Conditions ◽  
Conventional Grinding

In this work, a novel grinding method using a special abrasive tool was first proposed to achieve high tangential grinding force and low normal grinding force. The abrasive tool was developed with flexible composites to remove workpiece materials under “high-shear and low-pressure” grinding mode. The concept of the high-shear and low-pressure grinding method was introduced in detail. Grinding tests were carried out on a precision grinder with the developed abrasive tool for single crystal silicon specimens. The results showed that the grinding force ratio between tangential force and normal force for the proposed grinding method was ranged between 0.9 and 1.3, which was three times larger than that of the conventional grinding method. It was verified that the developed abrasive tool possessed the grinding characteristics of high tangential grinding force and low normal grinding force. After grinding of silicon specimens for 120 min, the value of surface roughness decreased from 429.20 to 32.91 nm under the selected grinding conditions. The surface quality of the silicon specimens was greatly improved after grinding.

Rie-Induced Damage to Single Crystal Silicon Monitored with Nondestructive Thermal Waves

1986 ◽  
Vol 68 ◽  
Author(s):  
Patrice Geraghty ◽  
W. Lee Smith
Keyword(s):  
Process Parameters ◽  
Plasma Etching ◽  
Thermal Wave ◽  
Silicon Surface ◽  
Single Crystal Silicon ◽  
Thermal Waves ◽  
Process Variables ◽  
Crystal Silicon ◽  
Laser Probe ◽  
Damage Level

AbstractA method is presented to nondestructively monitor damage in silicon caused by reactive-ion or plasma etching on actual product wafers or test wafers immediately following the etch step.Data is taken on product wafers by scanning the 1-micron laser probe spot across and along the bottom of RIE-etched trenches.The onset of silicon damage brings a marked increase to the thermal wave (TW) signal: as the RIE bias voltage was increased from -60 volts to -250 volts, the TW signal increased monotonically by 1230%.The effects of other RIE process parameters on the damage level were also measured.This study allowed the RIE process variables to be adjusted to minimize damage to the silicon surface.

Fabrication of Smooth Surface on 4H-SiC Substrate by Ultraviolet Assisted Local Polishing in Hydrogen Peroxide Solution

2012 ◽  
Vol 523-524 ◽  
pp. 24-28 ◽  
Author(s):  
Akihisa Kubota ◽  
Kazuya Kurihara ◽  
Mutsumi Touge
Keyword(s):  
Hydrogen Peroxide ◽  
Oxide Layer ◽  
Uv Irradiation ◽  
Process Parameters ◽  
Removal Rate ◽  
Single Crystal Silicon ◽  
Interference Microscopy ◽  
Process Time ◽  
Crystal Silicon ◽  
Synthetic Quartz

In this study, we investigated the possibility of removing and smoothing a single-crystal silicon carbide (SiC) surface under ultraviolet (UV) irradiation in hydrogen peroxide (H2O2) solution. In this method, a SiC substrate was excited by UV irradiation that transmitted synthetic quartz, and then an oxide layer on the SiC substrate was formed by photochemical reaction. Simultaneously, hydroxyl radical (OH*) was generated by the decomposition of H2O2 solution by UV irradiation. OH* plays an important role of oxidation of SiC surface. With these chemical reactions, oxide layer was effectively formed on the SiC surface. Finally, the oxide layer generated on a SiC substrate was chemically and/or mechanically removed by synthetic quartz and solutions. The polishing characteristics of this method were investigated by controlling the process parameters. Additionally, surface quality and removal depth were measured and evaluated by a phase-shift interference microscopy. Obtained results show that the surface morphology and the removal rate are strongly dependent on the existence of the UV irradiation. Moreover, it is shown that the removal characteristics of the SiC substrate depend on the process parameters such as the process time, reciprocating speed, and contact load. The processed surface has revealed that many scratches on the preprocessed surface was completely removed. The microroughness of the processed surface was improved to 0.15 nm (Rms) and 1.62 nm (p-v), respectively. These results provide useful information for obtaining an atomically smooth SiC surface.

Investigation of Semi-Fixed Abrasive Plate Wear Characteristics

2010 ◽  
Vol 126-128 ◽  
pp. 1029-1033
Author(s):  
Ping Zhao ◽  
Qian Fa Deng ◽  
Bing Hai Lv ◽  
Wei Hang ◽  
Zhi Wei Wang ◽  
...  
Keyword(s):  
Silicon Wafer ◽  
Surface Defects ◽  
Abrasive Tool ◽  
Advanced Ceramics ◽  
Wear Characteristic ◽  
Wear Characteristics ◽  
Abrasive Grains ◽  
Ultra Precision ◽  
Fixed Abrasive

In order to reduce or eliminate the surface defects caused by abrasive grains and improve the efficiency of ultra-precision processing, the technique of semi-fixed machining has been proposed for machining advanced ceramics. A semi-fixed abrasive tool (SFAT) has been manufactured; it has performances of semi-fixed machining technique. This document demonstrates wear characteristics of SFAT through experiments of machining silicon wafer. It showed that wet status or dry status of SFAT has greatly influenced wear characteristics of SFAT. Wear characteristic of SFAT presented mostly blockage and little grain-off occurred in dry status; mostly grain-off and little blockage presented in wet status.

HREM observation of dislocations near room temperature fractures in silicon

1988 ◽  
Vol 46 ◽  
pp. 892-893
Author(s):  
M. H. Rhee ◽  
W. A. Coghlan
Keyword(s):  
Cross Section ◽  
Room Temperature ◽  
Single Crystal Silicon ◽  
Dislocation Nucleation ◽  
Back Side ◽  
Ion Milling ◽  
Crystal Silicon ◽  
Flat Surfaces ◽  
Induced Fractures ◽  
Vicker’S Microhardness

Silicon is believed to be an almost perfectly brittle material with cleavage occurring on {111} planes. In such a material at room temperature cleavage is expected to occur prior to any dislocation nucleation. This behavior suggests that cleavage fracture may be used to produce usable flat surfaces. Attempts to show this have failed. Such fractures produced in semiconductor silicon tend to occur on planes of variable orientation resulting in surfaces with a poor surface finish. In order to learn more about the mechanisms involved in fracture of silicon we began a HREM study of hardness indent induced fractures in thin samples of oxidized silicon.Samples of single crystal silicon were oxidized in air for 100 hours at 1000°C. Two pieces of this material were glued together and 500 μm thick cross-section samples were cut from the combined piece. The cross-section samples were indented using a Vicker's microhardness tester to produce cracks. The cracks in the samples were preserved by thinning from the back side using a combination of mechanical grinding and ion milling.

Analysis of Silicon-On-Insulator Structures Formed By Oxygen Ion Implantation

1985 ◽  
Vol 43 ◽  
pp. 300-301
Author(s):  
N. Lewis ◽  
E. L. Hall ◽  
A. Mogro-Campero ◽  
R. P. Love
Keyword(s):  
Ion Implantation ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Silicon Layer ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
High Dose ◽  
Crystal Silicon ◽  
Oxygen Ion ◽  
Oxygen Ion Implantation

The formation of buried oxide structures in single crystal silicon by high-dose oxygen ion implantation has received considerable attention recently for applications in advanced electronic device fabrication. This process is performed in a vacuum, and under the proper implantation conditions results in a silicon-on-insulator (SOI) structure with a top single crystal silicon layer on an amorphous silicon dioxide layer. The top Si layer has the same orientation as the silicon substrate. The quality of the outermost portion of the Si top layer is important in device fabrication since it either can be used directly to build devices, or epitaxial Si may be grown on this layer. Therefore, careful characterization of the results of the ion implantation process is essential.

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