Dependence of Hysteresis Loops on Thickness of Thin Nickel Films Prepared by RF Sputtering

2011 ◽  
Vol 335-336 ◽  
pp. 1443-1447 ◽  
Author(s):  
Watcharee Rattanasakulthong ◽  
Pichai Sirisangsawang ◽  
Supree Pinitsoontorn ◽  
Chitnarong Sirisathitkul
Keyword(s):  
Rf Sputtering ◽  
Hysteresis Loops ◽  
Perpendicular Anisotropy ◽  
X Ray Diffraction ◽  
Saturation Field ◽  
X Ray ◽  
Nickel Films ◽  
Glass Substrates ◽  
Plane Anisotropy ◽  
Thin Nickel

Nickel films of varying thicknesses between 70 and 300 nm were deposited on glass substrates by RF sputtering and their broad (111) FCC peaks were identified by X-ray diffraction. The surface roughness and sub-micron grains were revealed by scanning electron microscopy. According to vibrating sample magnetometry, the films showed hysteresis loops with comparable coercive field and saturation field for the in-plane and perpendicular magnetizations. The increase in thickness substantially increased the magnetization and the squareness of the Ni films. The thickness can be classified into 2 regimes by the variation of squareness. The films are thinner than 200 nm showed the in-plane anisotropy whereas the perpendicular anisotropy was developed in the case of the thickness above 200 nm.

Post-Annealing on the Electrical Properties of Ta-Doped In2O3 Transparent Conductive Films

2012 ◽  
Vol 251 ◽  
pp. 387-391 ◽  
Author(s):  
Lei Xu ◽  
Rui Wang ◽  
Qi Xiao
Keyword(s):  
Optical Transmission ◽  
Rf Sputtering ◽  
Annealed Film ◽  
Transparent Conductive Oxide ◽  
X Ray Diffraction ◽  
Electrical And Optical Properties ◽  
X Ray ◽  
Glass Substrates ◽  
Conductive Films ◽  
Post Annealing

Ta-doped In2O3 transparent conductive oxide (TCO) films are deposited on glass substrates by radio-frequency (RF) sputtering at 300°C. The influence of post-annealing on the structural, morphologic, electrical, and optical properties of the films is investigated by X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), Hall measurement, and optical transmission spectroscopy. The obtained films are polycrystalline with a cubic structure and preferentially oriented in the (222) crystallographic direction. The lowest resistivity of 5.1 × 10−4 Ω•cm is obtained from the film annealed at 500°C, which is only half of that from the un-annealed film (9.9 × 10-4 Ω).

Relation Between Macro- and Microstress in Thin Metallic Layers

1999 ◽  
Vol 594 ◽  
Author(s):  
Léon J. Seijbel ◽  
Rob Delhez
Keyword(s):  
Dislocation Density ◽  
Grain Growth ◽  
Elastic Constants ◽  
Elastic Interaction ◽  
Growth Stress ◽  
X Ray Diffraction ◽  
X Ray ◽  
Nickel Films ◽  
Thin Nickel ◽  
Annealing Experiments

AbstractX-ray diffraction has been used to measure the stress in thin nickel films. In addition to the stress value, information is obtained about the elastic interaction between grains. Various models exist to calculate the stress from the strain. A model that uses the mechanical elastic constants has been used. From this model it can be concluded that the model by Hill is applicable for the layers analyzed. Annealing experiments between 300 and 500 K show that the initially present growth stress reduces to zero at 500 K. The microstrain inside the grains is obtained from the broadening of the diffraction lines measured. During annealing the diffraction lines narrow. This is caused by two effects: grain growth and reduction of the dislocation density.

Electrodeposition of Cu2O Particles by Using Electrolyte Solution Containing Glucopone as Surfactant

2009 ◽  
Vol 1 (2) ◽  
pp. 18-20
Author(s):  
Dahyunir Dahlan
Keyword(s):  
Indium Tin Oxide ◽  
Pulse Current ◽  
Platinum Electrode ◽  
Saturated Calomel Electrode ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
Continuous Current ◽  
Oxide Particles ◽  
Cupric Sulphate

Copper oxide particles were electrodeposited onto indium tin oxide (ITO) coated glass substrates. Electrodeposition was carried out in the electrolyte containing cupric sulphate, boric acid and glucopone. Both continuous and pulse currents methods were used in the process with platinum electrode, saturated calomel electrode (SCE) and ITO electrode as the counter, reference and working electrode respectively. The deposited particles were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM). It was found that, using continuous current deposition, the deposited particles were mixture of Cu2O and CuO particles. By adding glucopone in the electrolyte, particles with spherical shapes were produced. Electrodeposition by using pulse current, uniform cubical shaped Cu2O particles were produced

X- ray diffraction and dielectric properties of PbSe thin films

2019 ◽  
Vol 15 (34) ◽  
pp. 1-14
Author(s):  
Bushra A. Hasan
Keyword(s):  
Thin Films ◽  
Thermal Activation ◽  
Thermal Evaporation ◽  
Thermal Activation Energy ◽  
Dielectric Constants ◽  
Conductivity Measurements ◽  
X Ray Diffraction ◽  
Thermal Evaporation Method ◽  
X Ray ◽  
Glass Substrates

Lead selenide PbSe thin films of different thicknesses (300, 500, and 700 nm) were deposited under vacuum using thermal evaporation method on glass substrates. X-ray diffraction measurements showed that increasing of thickness lead to well crystallize the prepared samples, such that the crystallite size increases while the dislocation density decreases with thickness increasing. A.C conductivity, dielectric constants, and loss tangent are studied as function to thickness, frequency (10kHz-10MHz) and temperatures (293K-493K). The conductivity measurements confirm confirmed that hopping is the mechanism responsible for the conduction process. Increasing of thickness decreases the thermal activation energy estimated from Arhinus equation is found to decrease with thickness increasing. The increase of thickness lead to reduce the polarizability α while the increasing of temperature lead to increase α.

scholarly journals Reactive Dual Magnetron Sputtering: A Fast Method for Preparing Stoichiometric Microcrystalline ZnWO4 Thin Films

Surfaces ◽  
2021 ◽  
Vol 4 (2) ◽  
pp. 106-114
Author(s):  
Yannick Hermans ◽  
Faraz Mehmood ◽  
Kerstin Lakus-Wollny ◽  
Jan P. Hofmann ◽  
Thomas Mayer ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Photoelectron Spectroscopy ◽  
Fast Method ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
Post Annealing ◽  
Rf Signal ◽  
First Time

Thin films of ZnWO4, a promising photocatalytic and scintillator material, were deposited for the first time using a reactive dual magnetron sputtering procedure. A ZnO target was operated using an RF signal, and a W target was operated using a DC signal. The power on the ZnO target was changed so that it would match the sputtering rate of the W target operated at 25 W. The effects of the process parameters were characterized using optical spectroscopy, X-ray diffraction, and scanning electron microscopy, including energy dispersive X-ray spectroscopy as well as X-ray photoelectron spectroscopy. It was found that stoichiometric microcrystalline ZnWO4 thin films could be obtained, by operating the ZnO target during the sputtering procedure at a power of 55 W and by post-annealing the resulting thin films for at least 10 h at 600 °C. As FTO coated glass substrates were used, annealing led as well to the incorporation of Na, resulting in n+ doped ZnWO4 thin films.

Effect of Substrate Temperature on the Electrochromic Properties of Cobalt Hydroxide Thin Films Prepared by Reactive Sputtering

2011 ◽  
Vol 1328 ◽  
Author(s):  
KyoungMoo Lee ◽  
Yoshio Abe ◽  
Midori Kawamura ◽  
Hidenobu Itoh
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Indium Tin Oxide ◽  
Large Change ◽  
Amorphous Structure ◽  
Cobalt Hydroxide ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
Substrate Temperatures

ABSTRACTCobalt hydroxide thin films with a thickness of 100 nm were deposited onto glass, Si and indium tin oxide (ITO)-coated glass substrates by reactively sputtering a Co target in H2O gas. The substrate temperature was varied from -20 to +200°C. The EC performance of the films was investigated in 0.1 M KOH aqueous solution. X-ray diffraction (XRD) and Fourier transform infrared (FTIR) spectroscopy of the samples indicated that Co3O4 films were formed at substrate temperatures above 100°C, and amorphous CoOOH films were deposited in the range from 10 to -20°C. A large change in transmittance of approximately 26% and high EC coloration efficiency of 47 cm2/C were obtained at a wavelength of 600 nm for the CoOOH thin film deposited at -20°C. The good EC performance of the CoOOH films is attributed to the low film density and amorphous structure.

Effects of Surface Energy on the Microstructures of Thin Sb Films

1990 ◽  
Vol 202 ◽  
Author(s):  
L. H. Chou ◽  
M. C. Kuo
Keyword(s):  
Electron Microscopy ◽  
Surface Energy ◽  
Grain Growth ◽  
Grain Orientation ◽  
Thermal Evaporation ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
Transmission Electron ◽  
Diffraction Peaks

ABSTRACTThin Sb films have been prepared on glass substrates by rapid thermal evaporation. Films with thicknesses varied from 260 Å to 1300Å were used for the study. X-ray diffraction data showed that for films deposited at room substrate temperature, an almost random grain orientation was observed for films of 1300 Å thick and a tendency for preferred grain orientation was observed as films got thinner. For films of 260 Å thick, only two x-ray diffraction peaks--(003) and (006) were observed. After thermal annealing, secondary grains grew to show preferred orientation in all the films. This phenomenon was explained by surface-energy-driven secondary grain growth. This paper reports the effects of annealing time and film thickness on the secondary grain growth and the evolution of thin Sb film microstmctures. Transmission electron microscopy (TEM) and x-ray diffraction were used to characterize the films.

Compamson in the Growth and Properties of rf Sputtered μc-Si:H and Glow Discharge-Chemical Vapor Deposited μc-Si:H Films

1993 ◽  
Vol 321 ◽  
Author(s):  
J. Y. Lin ◽  
B. H. Tseng ◽  
K. C. Hsu ◽  
H. L. Hwang
Keyword(s):  
Glow Discharge ◽  
Rf Sputtering ◽  
Chemical Vapor ◽  
Treatment Method ◽  
X Ray Diffraction ◽  
X Ray ◽  
Grain Sizes ◽  
Chemical Vapor Deposited ◽  
Ft Ir ◽  
Almost All

ABSTRACTProperties of μc-Si:H films grown by rf sputtering and by glow discharge-chemical vapor deposition (GD-CVD) using diluted-hydrogen and hydrogen-atom-treatment method were compared employing TEM, X-ray diffraction, Raman scattering and FT-IR. The films deposited by both methods all exhibited comparable grain sizes in the range of 10–18 nm. and showed the same tendency in almost all the Measurements.

scholarly journals Compositional Dependence of Structural Properties of Prepared Alloys and Films

2011 ◽  
Vol 2011 ◽  
pp. 1-6
Author(s):  
M. F. A. Alias ◽  
A. A. J. Al-Douri ◽  
E. M. N. Al-Fawadi ◽  
A. A. Alnajjar
Keyword(s):  
Room Temperature ◽  
Thermal Evaporation ◽  
High Accuracy ◽  
Compositional Dependence ◽  
X Ray Diffraction ◽  
Thermal Evaporation Method ◽  
X Ray ◽  
Glass Substrates ◽  
Different Temperatures ◽  
Good Agreement

Results of a study of alloys and films with various Pb content have been reported and discussed. Films of of thickness 1.5 μm have been deposited on glass substrates by flash thermal evaporation method at room temperature, under vacuum at constant deposition rate. These films were annealed under vacuum around 10−6Torr at different temperatures up to 523 K. The composition of the elements in alloys was determined by standard surfaces techniques such as atomic absorption spectroscopy (AAS) and X-ray fluorescence (XRF), and the results were found of high accuracy and in very good agreement with the theoretical values. The structure for alloys and films is determined by using X-ray diffraction. This measurement reveals that the structure is polycrystalline with cubic structure and there are strong peaks at the direction (200) and (111). The effect of heat treatment on the crystalline orientation, relative intensity, and grain size of films is presented.

scholarly journals Partial Reduction/Re-Oxidation Processing of Y-Ba-Cu-O Sputtered Thin Films

1989 ◽  
Vol 169 ◽  
Author(s):  
F.H. Garzon ◽  
J. G. Beery ◽  
D. K. Wilde ◽  
I. D. Raistrick
Keyword(s):  
Thin Films ◽  
Rf Sputtering ◽  
Partial Reduction ◽  
Rf Power ◽  
X Ray Diffraction ◽  
X Ray ◽  
Post Annealing ◽  
Residual Oxygen ◽  
Ceramic Targets ◽  
Substrate Temperatures

AbstractThin films of Y‐Ba‐Cu‐O were produced by RF sputtering of YBa2Cu3O7‐x ceramic targets, using a variety of plasma compositions, RF power levels, and substrate temperatures. Post annealing of these films in oxygen produced superconducting films with Tc values between 40‐60 K, broad transition widths and semiconductor‐like electrical behavior above Tc. Subsequent annealing at 850°C in an inert gas with a residual oxygen partial pressure of ≤10 ppm followed by an oxygen anneal produced high quality thin films: Tc> 85 K with narrow transition widths. The structure and morphology of these films during reduction‐oxidation processing were monitored using X‐ray diffraction and electron microscopy.

Sign in / Sign up

Export Citation Format

Share Document