Optical Properties of Nano-CuInSi Thin Films Prepared by Multilayer Synthesized Method

2011 ◽  
Vol 403-408 ◽  
pp. 1094-1098
Author(s):  
Jian Sheng Xie ◽  
Ping Luan ◽  
Jin Hua Li
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Film Surface ◽  
X Ray Diffraction ◽  
Sem Images ◽  
X Ray ◽  
N2 Atmosphere ◽  
Double Beam ◽  
Absorption Studies ◽  
Different Temperatures

Thin Nano-CuInSi films have been prepared by multilayer synthesized method using magnetron sputtering technology, and followed by annealing in N2 atmosphere at different temperatures. The structures of CuInSi films were detected by X-ray diffraction(XRD); X-ray diffraction studies of the annealed films indicate the presence of CuInSi, the peak of main crystal phase is at 2θ=42.450°; the morphology of the film surface was studied by SEM. The SEM images show that the crystalline of the film prepared by multilayer synthesized method was granulated. The transmittance (T) spectra of the films were measured by Shimadzu UV-2450 double beam spectrophotometer. The calculated absorption coefficient is larger than 105 cm−1 when the wavelength is shorter than 750 nm. The band gap has been estimated from the optical absorption studies and found to be about 1.47 eV, but changes with purity of CuInSi. CuInSi thin film is a potential absorber layer material applied in solar cells and photoelectric automatic control.

Thin CuInSi Film Deposited by Magnetron Co-Sputtering

2012 ◽  
Vol 433-440 ◽  
pp. 302-305
Author(s):  
Jian Sheng Xie ◽  
Jin Hua Li ◽  
Ping Luan
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Optical Absorption ◽  
Automatic Control ◽  
Band Gap ◽  
Film Surface ◽  
X Ray Diffraction ◽  
X Ray ◽  
Absorption Studies ◽  
Different Temperatures

Thin CuInSi films have been prepared by magnetron co-sputtering, and followed by annealing in N2 atmosphere at different temperatures. The structures of CuInSi films were detected by X-ray diffraction(XRD); X-ray diffraction studies of the annealed films indicate the presence of CuInSi, In2O3 and other peaks. The morphology of the film surface was studied by SEM. The band gap has been estimated from the optical absorption studies and found to be about 1.40 eV, but changes with purity of CuInSi. CuInSi thin film is a potential absorber layer material applied in solar cells and photoelectric automatic control.

Property Comparison of CuInSi Films Prepared by Multilayer Synthesized and Magnetron Co-Sputtering

2011 ◽  
Vol 110-116 ◽  
pp. 3755-3761
Author(s):  
Jian Sheng Xie ◽  
Jin Hua Li ◽  
Ping Luan
Keyword(s):  
Grain Size ◽  
Film Surface ◽  
Nanocomposite Films ◽  
X Ray Diffraction ◽  
Sem Images ◽  
X Ray ◽  
Absorption Studies ◽  
Nanocomposite Thin Films ◽  
Different Temperatures ◽  
Xrd Patterns

Using magnetron sputtering technology, the CuInSi nanocomposite thin films were prepared by magnetron co-sputtering method and multilayer synthesized method respectively,and followed by annealing in N2 atmosphere at different temperatures. The structure of CuInSi nanocomposite films were detected by X-ray diffraction (XRD); X-ray diffraction studies of the annealed films indicate the presence of CuInSi, the peak of main crystal phase is at about 2θ=42.308°,meanwhile,there are In2O3 peak and other peaks in the XRD patterns of films. The morphology of the film surface was studied by SEM. The SEM images show that the crystalline of the film prepared by multilayer synthesized method was granulated, But the crystalline of the film prepared by magnetron co-sputtering with needle shape. The grain size is a few hundred angstroms. The band gap has been estimated from the optical absorption studies and found to be about 1.40 eV for the sample by magnetron co-sputtering, and 1.45eV for the sample by multilayer synthesized, but all changes with the purity of CuInSi.

scholarly journals Strain depth profiles in thin films extracted from in-plane X-ray diffraction

2021 ◽  
Vol 54 (1) ◽  
Author(s):  
Claudia Cancellieri ◽  
Daniel Ariosa ◽  
Aleksandr V. Druzhinin ◽  
Yeliz Unutulmazsoy ◽  
Antonia Neels ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Film Thickness ◽  
Depth Profile ◽  
Film Surface ◽  
Inverse Laplace Transform ◽  
X Ray Diffraction ◽  
X Ray ◽  
Stress Gradients ◽  
Dependent Strain

Thin films generally contain depth-dependent residual stress gradients, which influence their functional properties and stability in harsh environments. An understanding of these stress gradients and their influence is crucial for many applications. Standard methods for thin-film stress determination only provide average strain values, thus disregarding possible variation in strain/stress across the film thickness. This work introduces a new method to derive depth-dependent strain profiles in thin films with thicknesses in the submicrometre range by laboratory-based in-plane grazing X-ray diffraction, as applied to magnetron-sputtering-grown polycrystalline Cu thin films with different thicknesses. By performing in-plane grazing diffraction analysis at different incidence angles, the in-plane lattice constant depth profile of the thin film can be resolved through a dedicated robust data processing procedure. Owing to the underlying intrinsic difficulties related to the inverse Laplace transform of discrete experimental data sets, four complementary procedures are presented to reliably extract the strain depth profile of the films from the diffraction data. Surprisingly, the strain depth profile is not monotonic and possesses a complex shape: highly compressive close to the substrate interface, more tensile within the film and relaxed close to the film surface. The same strain profile is obtained by the four different data evaluation methods, confirming the validity of the derived depth-dependent strain profiles as a function of the film thickness. Comparison of the obtained results with the average in-plane stresses independently derived by the standard stress analysis method in the out-of-plane diffraction geometry validates the solidity of the proposed method.

Optical Properties of CulnSi Nanocomposite Thin Film Deposited by Magnetron Co-Sputtering

2011 ◽  
Vol 403-408 ◽  
pp. 1089-1093
Author(s):  
Jian Sheng Xie ◽  
Jin Hua Li ◽  
Luan Ping
Keyword(s):  
Thin Film ◽  
Optical Properties ◽  
Optical Absorption ◽  
Nanocomposite Films ◽  
Nanocomposite Thin Film ◽  
X Ray Diffraction ◽  
X Ray ◽  
Double Beam ◽  
Absorption Studies ◽  
Xrd Studies

Thin CuInSi nanocomposite films were prepared by magnetron co-sputtering. The structures of CuInSi nanocomposite films were detected by X-ray diffraction(XRD); XRD studies of the annealed films indicate the presence of CuInSi, the main crystal phase peak is at 2θ=42.400°. The transmittance (T) spectra of the films were measured by Shimadzu UV-2450 double beam spectrophotometer. The band gap has been estimated from the optical absorption studies and found to be about 1.40 eV, but changes with purity of CuInSi.

scholarly journals Effect of Zr content on the structure and morphology of CrZrN thin films prepared by reactive DC magnetron co-sputtering method

2021 ◽  
Vol 2145 (1) ◽  
pp. 012030
Author(s):  
Adisorn Buranawong ◽  
Nirun Witit-Anun
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Film Structure ◽  
Zirconium Nitride ◽  
X Ray Diffraction ◽  
Sem Images ◽  
X Ray ◽  
Substrate Heating ◽  
Structure And Morphology ◽  
Microstructure Morphology

Abstract In this research, nanostructured chromium zirconium nitride (CrZrN) thin film has been deposited on Si(100) substrates by reactive DC magnetron co-sputtering method without in situ substrate heating and post-deposition annealing. The effects of Zr content on thin film structure and morphology were investigated. The Zr content in the films were varied by applied the sputtering current of Zr target (Izr) in the range of 300 to 900 mA, whereas the current of Cr target was kept at 300 mA. The crystal structure, microstructure, morphology, thickness, and chemical composition were characterized by glancing angle X-ray diffraction (GA-XRD), field emission scanning electron microscopy (FE-SEM), and energy-dispersive X-ray spectroscopy (EDS) techniques, respectively. The results showed that the increase of Izr not only increased the deposition rate, but also increased the Zr content of the as-deposited film ranging from 3.9 to 26.5 at%. The as-deposited thin films were formed as a (Cr,Zr)N solid solution, with fcc structure in (111) and (200) plane, where Cr atoms were replaced by Zr atoms in the CrN lattice. The 2θ diffraction peaks were shifted to the lower value as increase of Zr content which was obtained by increased Izr. The nanocrystalline CrZrN structure with crystal sizes smaller than 10 nm structure were calculated for as-deposited thin films. The lattice parameters increased from 4.187 to 4.381 Å, whereas the crystal size decreased from 8.3 to 6.4 nm. The FE-SEM images of all the CrZrN films exhibited compact columnar with dense morphology as a function of Zr content. Moreover, the thickness of the CrZrN thin films was increased of 302 – 421 nm.

scholarly journals Structural, Wetting and Magnetic Properties of Sputtered Fe70Pd30 Thin Film with Nanostructured Surface Induced by Dealloying Process

Nanomaterials ◽  
2021 ◽  
Vol 11 (2) ◽  
pp. 282
Author(s):  
Gabriele Barrera ◽  
Federica Celegato ◽  
Matteo Cialone ◽  
Marco Coïsson ◽  
Paola Rizzi ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetic Properties ◽  
Magnetic Measurements ◽  
Film Surface ◽  
Direct Consequence ◽  
X Ray Diffraction ◽  
Sem Images ◽  
Sputtering Deposition ◽  
Research Fields

FePd alloys in the thin film form represent a multipurpose and versatile material with relevant chemical and physical properties studied in different research fields. Moreover, the ability to manipulate and fine-tune the film surface with nanometric scale precision represents a degree of freedom useful to adapt these thin film properties to the demands of different desired applications. In this manuscript, Fe70Pd30 (at. %) thin films are prepared with a thickness of 50 and 200 nm by means of the widely used co-sputtering deposition technique. Subsequently, selective removal of the iron element from the alloy and the consequent surface diffusion of the palladium was induced by a dealloying treatment under free corrosion conditions in hydrochloric acid. The size and shape of the grains of the as-deposited thin films determine the dissolution rate of the iron element with a direct consequence not only on the surface morphology and the stoichiometry of the alloy but also on the wetting and magnetic properties of the sample. X-ray diffraction, Scanning Electron Microscopy (SEM) images, contact angle and magnetic measurements have been performed to provide a thorough characterisation of the fundamental properties of these nanostructured bimetallic thin films.

Microraman Spectroscopy and X-Ray Diffraction Studies of Ti-W-O Thin Films

1996 ◽  
Vol 441 ◽  
Author(s):  
Luigi Sangaletti ◽  
Elza Bontempi ◽  
Laura E. Depero ◽  
P. Galinetto ◽  
Silvio Groppelli ◽  
...  
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
Scanning Electron Microscopy ◽  
Cubic Phase ◽  
X Ray Diffraction ◽  
X Ray ◽  
Different Temperatures ◽  
Microraman Spectroscopy ◽  
Scanning Electron

AbstractThin films of the Ti-W-O system grown by r.f. reactive sputtering from a Ti-W (10%–90% weight) target have been studied by Raman and microraman spectroscopy, X-ray diffraction and scanning electron microscopy with the aim to investigate their microstructural and morphological properties. To this purpose, the kinetics of structural transformations at different temperatures (600 °C, and 800 °C) have been studied, and the effect of Ti on the WO3 lattice has been singled out. The results show that annealing at different temperatures induces a microstructural evolution from the amorphous phase of the as-deposited thin film to WO3 crystalline phases via an intermediate cubic disordered phase of WO3. The effect of Ti on this cubic phase and on the thin film morphology is also investigated with the aid of microraman and scanning electron microscopy analysis. The results show that two distinct phases arise upon long annealing treatments; namely, small crystallites belonging to the WO3 monoclinic phase are dispersed on a layer composed of a disordered cubic WO3 phase with a high Ti content.

Multilayer Synthesized CuInSi Composite Film by Magnetron Sputtering

2011 ◽  
Vol 383-390 ◽  
pp. 2770-2773
Author(s):  
Jian Sheng Xie ◽  
Ping Luan ◽  
Jin Hua Li
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Composite Film ◽  
Film Surface ◽  
Nanocomposite Films ◽  
Crystal Phase ◽  
X Ray Diffraction ◽  
Sem Images ◽  
X Ray ◽  
Nanocomposite Thin Films

Using magnetron sputtering technology, the CuInSi nanocomposite thin films were prepared by multilayer synthesized method. The structure of CuInSi nanocomposite films was detected by X-ray diffraction (XRD), the peak of main crystal phase is at 2θ=42.180°; the morphology of the film surface was studied by SEM. The SEM images show that the crystalline of the film prepared by multilayer synthesized method was granulated, differed from the needle shape which was the morphology of the CuInSi film prepared by magnetron co-sputtering.

Examination of CoNiCu thin films by using XRF and XRD

2014 ◽  
Vol 92 (5) ◽  
pp. 435-439 ◽  
Author(s):  
Ö. Söğüt ◽  
Ç. Dönük ◽  
G. Apaydın ◽  
Ö.F. Bakkaloğlu
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
X Rays ◽  
X Ray Diffraction ◽  
Sem Images ◽  
X Ray ◽  
Radioisotope Source ◽  
Surface Morphologies ◽  
Xrf Spectroscopy ◽  
Fcc Structure

A series of thin films of CoNiCu and NiCu produced using the electrodeposition method have been examined using X-ray fluorescence (XRF), X-ray diffraction (XRD), and scanning electron microscopy (SEM). Energy dispersive XRF spectroscopy was used to determine the concentrations of the atomic percentage in these films. CoNiCu and NiCu thin film samples were excited by gamma rays with 59.5 keV energy photons from 100 mCi 241Am radioisotope source. K X-rays emitted by samples were counted by an Ultra-LEGe detector having a resolution of 150 eV at 5.9 keV. Structural analyses of these films have been done using the XRD technique and thin films were found to have a face-centred cubic (fcc) structure. In addition, surface morphologies of the films have been analysed by SEM. If one examines the SEM images of thin film samples, it can be seen that these elements have been homogeneously distributed in the samples of the thin films.

Palladium Nanowire Thin Films via Template Growth

2003 ◽  
Vol 775 ◽  
Author(s):  
Donghai Wang ◽  
David T. Johnson ◽  
Byron F. McCaughey ◽  
J. Eric Hampsey ◽  
Jibao He ◽  
...  
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Conductive Substrate ◽  
Palladium Nanowires ◽  
Efficient Route ◽  
Silica Thin Film

AbstractPalladium nanowires have been electrodeposited into mesoporous silica thin film templates. Palladium continually grows and fills silica mesopores starting from a bottom conductive substrate, providing a ready and efficient route to fabricate a macroscopic palladium nanowire thin films for potentially use in fuel cells, electrodes, sensors, and other applications. X-ray diffraction (XRD) and transmission electron microscopy (TEM) indicate it is possible to create different nanowire morphology such as bundles and swirling mesostructure based on the template pore structure.

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