Effect of Foreign Metal Doping on the Gas Sensing Behaviors of SnO2-Based Gas Sensor

2008 ◽  
Vol 47-50 ◽  
pp. 1502-1505
Author(s):  
Kouichi Suematsu ◽  
Takanori Honda ◽  
Masayoshi Yuasa ◽  
Tetsuya Kida ◽  
Kengo Shimanoe ◽  
...  
Keyword(s):  
Carrier Concentration ◽  
Gas Sensors ◽  
Gas Sensing ◽  
Power Laws ◽  
Material Design ◽  
Theoretical Models ◽  
Electric Resistance ◽  
Relative Resistance ◽  
Partial Pressures ◽  
Semiconductor Gas Sensors

Recently, we have proposed some theoretical models, power laws and effect of particle shape and size, for semiconductor gas sensors. The models show that a depletion theory of semiconductor can be combined with the dynamics of adsorption and/or reactions of gases on the surface. In the case of SnO2, the relative resistance (R/R0) is proportional to PO 2 n, where n is a constant value (n=1/2) on oxygen partial pressure. In addition, carrier concentration in SnO2 influences depth of the depletion. In this study, to experimentally reveal such effects, we tried to control the carrier concentration in SnO2 by foreign doping and examined their electrical resistance and sensor response. Correlations between doping concentration, crystalline size, and partial pressures of oxygen and H2 on the electric resistance are discussed to reveal the material design for semiconductor gas sensors.

Nanocrystalline Materials as Potential Gas Sensing Elements

1997 ◽  
Vol 501 ◽  
Author(s):  
G. S. V. Coles ◽  
G. Williams
Keyword(s):  
Gas Sensors ◽  
Nanocrystalline Materials ◽  
Tin Dioxide ◽  
Gas Sensing ◽  
Electronics Industry ◽  
Laser Evaporation ◽  
Foreseeable Future ◽  
Specific Context ◽  
Semiconductor Gas Sensors ◽  
Cost Of Materials

ABSTRACTSensors and Transducers, and in the specific context of this paper gas sensors, are currently amongst the largest growth areas in the modem electronics industry and this seems likely to continue for the foreseeable future. Nanocrystalline materials posses many properties that could make them ideal as potential gas sensing elements with many advantages over their microcrystalline counterparts. Most importantly these include increased surface area coupled with reduced sintering temperatures and times. However, it should also be noted that there are several disadvantages including the comparatively high cost of materials and increased electrical resistance.This paper reviews the operating mechanisms of semiconductor gas sensors and the possible advantages of using nano sized powders to produce gas sensitive devices. Results are presented which have been obtained from several materials produced by laser evaporation including alumina (Al2O3), zirconia (ZrO2), and tin dioxide (SnO2) in contaminated atmospheres incorporating carbon monoxide, hydrogen and methane.

Pure and Pr-doped Ce4W9O33 with superior hydroxyl scavenging ability: Humidity-independent oxide chemiresistors

2021 ◽  
Author(s):  
Jun-Sik Kim ◽  
Ki Beom Kim ◽  
Huayao Li ◽  
Chan Woong Na ◽  
Kyeorei Lim ◽  
...  
Keyword(s):  
Gas Sensors ◽  
Gas Sensing ◽  
Oxide Semiconductor ◽  
Semiconductor Gas Sensors ◽  
First Time ◽  
Sensing Characteristics ◽  
Standing Problem

Water poisoning has been a long-standing problem in oxide semiconductor gas sensors. Herein, for the first time, we report that pure and Pr-doped Ce4W9O33 provide humidity-independent gas sensing characteristics. The...

scholarly journals Consideration for Oxygen Adsorption Species on SnO2 Semiconductor Gas Sensors

Proceedings ◽  
2019 ◽  
Vol 14 (1) ◽  
pp. 18
Author(s):  
Kengo Shimanoe ◽  
Takaharu Mizukami ◽  
Koichi Suematsu ◽  
Ken Watanabe
Keyword(s):  
Water Vapor ◽  
Gas Sensors ◽  
Gas Sensing ◽  
Oxygen Adsorption ◽  
Sensing Properties ◽  
Gas Sensing Properties ◽  
Semiconductor Gas Sensors ◽  
Adsorption Species

Water vapor is the most important factor to influence on gas sensing properties. […]

scholarly journals Combination of Ceramic Laser Micromachining and Printed Technology as a Way for Rapid Prototyping Semiconductor Gas Sensors

Micromachines ◽  
2021 ◽  
Vol 12 (12) ◽  
pp. 1440
Author(s):  
Nikolay Samotaev ◽  
Konstantin Oblov ◽  
Pavel Dzhumaev ◽  
Marco Fritsch ◽  
Sindy Mosch ◽  
...  
Keyword(s):  
Rapid Prototyping ◽  
Gas Sensors ◽  
Gas Sensing ◽  
Manufacturing Method ◽  
Design And Optimization ◽  
Nano Fabrication ◽  
Sensor Fabrication ◽  
Semiconductor Gas Sensors ◽  
Metal Oxide Sensor ◽  
Laser Micromilling

The work describes a fast and flexible micro/nano fabrication and manufacturing method for ceramic Micro-electromechanical systems (MEMS)sensors. Rapid prototyping techniques are demonstrated for metal oxide sensor fabrication in the form of a complete MEMS device, which could be used as a compact miniaturized surface mount devices package. Ceramic MEMS were fabricated by the laser micromilling of already pre-sintered monolithic materials. It has been demonstrated that it is possible to deposit metallization and sensor films by thick-film and thin-film methods on the manufactured ceramic product. The results of functional tests of such manufactured sensors are presented, demonstrating their full suitability for gas sensing application and indicating that the obtained parameters are at a level comparable to those of industrial produced sensors. Results of design and optimization principles of applied methods for micro- and nanosystems are discussed with regard to future, wider application in semiconductor gas sensors prototyping.

scholarly journals Inhomogeneous Oxygen Vacancy Distribution in Semiconductor Gas Sensors: Formation, Migration and Determination on Gas Sensing Characteristics

Sensors ◽  
2017 ◽  
Vol 17 (8) ◽  
pp. 1852 ◽  
Author(s):  
Jianqiao Liu ◽  
Yinglin Gao ◽  
Xu Wu ◽  
Guohua Jin ◽  
Zhaoxia Zhai ◽  
...  
Keyword(s):  
Oxygen Vacancy ◽  
Gas Sensors ◽  
Gas Sensing ◽  
Vacancy Distribution ◽  
Semiconductor Gas Sensors ◽  
Sensing Characteristics

Effects of Hexamethyldisilazane Modification on Gas-Sensing Properties of Semiconductor Gas Sensors

2020 ◽  
Vol 98 (12) ◽  
pp. 67-73
Author(s):  
Taro Ueda ◽  
Hiroto Fukuura ◽  
Kai Kamada ◽  
Takeo Hyodo ◽  
Yasuhiro Shimizu
Keyword(s):  
Gas Sensors ◽  
Gas Sensing ◽  
Sensing Properties ◽  
Gas Sensing Properties ◽  
Semiconductor Gas Sensors

scholarly journals MoS2 Nanosheets Sensitized with Quantum Dots for Room-Temperature Gas Sensors

2020 ◽  
Vol 12 (1) ◽  
Author(s):  
Jingyao Liu ◽  
Zhixiang Hu ◽  
Yuzhu Zhang ◽  
Hua-Yao Li ◽  
Naibo Gao ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Gas Sensors ◽  
High Performance ◽  
Large Scale ◽  
Room Temperature ◽  
Gas Sensing ◽  
Low Cost ◽  
Surface And Interface ◽  
Sensor Performance ◽  
Semiconductor Gas Sensors

AbstractThe Internet of things for environment monitoring requires high performance with low power-consumption gas sensors which could be easily integrated into large-scale sensor network. While semiconductor gas sensors have many advantages such as excellent sensitivity and low cost, their application is limited by their high operating temperature. Two-dimensional (2D) layered materials, typically molybdenum disulfide (MoS2) nanosheets, are emerging as promising gas-sensing materials candidates owing to their abundant edge sites and high in-plane carrier mobility. This work aims to overcome the sluggish and weak response as well as incomplete recovery of MoS2 gas sensors at room temperature by sensitizing MoS2 nanosheets with PbS quantum dots (QDs). The huge amount of surface dangling bonds of QDs enables them to be ideal receptors for gas molecules. The sensitized MoS2 gas sensor exhibited fast and recoverable response when operated at room temperature, and the limit of NO2 detection was estimated to be 94 ppb. The strategy of sensitizing 2D nanosheets with sensitive QD receptors may enhance receptor and transducer functions as well as the utility factor that determine the sensor performance, offering a powerful new degree of freedom to the surface and interface engineering of semiconductor gas sensors.

Effects of Hexamethyldisilazane Modification on Gas-Sensing Properties of Semiconductor Gas Sensors

2020 ◽  
Vol MA2020-02 (66) ◽  
pp. 3336-3336
Author(s):  
Taro Ueda ◽  
Hiroto Fukuura ◽  
Kai Kamada ◽  
Takeo Hyodo ◽  
Yasuhiro Shimizu
Keyword(s):  
Gas Sensors ◽  
Gas Sensing ◽  
Sensing Properties ◽  
Gas Sensing Properties ◽  
Semiconductor Gas Sensors

Effects of Hexamethyldisilazane Modification on Gas-Sensing Properties of SnO2-Based Semiconductor Gas Sensors

2020 ◽  
Vol MA2020-01 (28) ◽  
pp. 2142-2142
Author(s):  
Taro Ueda ◽  
Hiroto Fukuura ◽  
Kai Kamada ◽  
Takeo Hyodo ◽  
Yasuhiro Shimizu
Keyword(s):  
Gas Sensors ◽  
Gas Sensing ◽  
Sensing Properties ◽  
Gas Sensing Properties ◽  
Semiconductor Gas Sensors

scholarly journals Influence of Oxygen Vacancy Behaviors in Cooling Process on Semiconductor Gas Sensors: A Numerical Analysis

Sensors ◽  
2018 ◽  
Vol 18 (11) ◽  
pp. 3929 ◽  
Author(s):  
Jianqiao Liu ◽  
Wanqiu Wang ◽  
Zhaoxia Zhai ◽  
Guohua Jin ◽  
Yuzhen Chen ◽  
...  
Keyword(s):  
Numerical Analysis ◽  
Oxygen Vacancy ◽  
Diffusion Equation ◽  
Gas Sensors ◽  
Gas Sensing ◽  
Cooling Process ◽  
Proposed Model ◽  
Vacancy Model ◽  
Vacancy Distribution ◽  
Semiconductor Gas Sensors

The influence of oxygen vacancy behaviors during a cooling process in semiconductor gas sensors is discussed by the numerical analysis method based on the gradient-distributed oxygen vacancy model. A diffusion equation is established to describe the behaviors of oxygen vacancies, which follows the effects of diffusion and exclusion in the cooling process. Numerical analysis is introduced to find the accurate solutions of the diffusion equation. The solutions illustrate the oxygen vacancy distribution profiles, which are dependent on the cooling rate as well as the temperature interval of the cooling process. The gas-sensing characteristics of reduced resistance and response are calculated. Both of them, together with oxygen vacancy distribution, show the grain size effects and the re-annealing effect. It is found that the properties of gas sensors can be controlled or adjusted by the designed cooling process. The proposed model provides a possibility for sensor characteristics simulations, which may be beneficial for the design of gas sensors. A quantitative interpretation on the gas-sensing mechanism of semiconductors has been contributed.

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