Combination of Ceramic Laser Micromachining and Printed Technology as a Way for Rapid Prototyping Semiconductor Gas Sensors

The work describes a fast and flexible micro/nano fabrication and manufacturing method for ceramic Micro-electromechanical systems (MEMS)sensors. Rapid prototyping techniques are demonstrated for metal oxide sensor fabrication in the form of a complete MEMS device, which could be used as a compact miniaturized surface mount devices package. Ceramic MEMS were fabricated by the laser micromilling of already pre-sintered monolithic materials. It has been demonstrated that it is possible to deposit metallization and sensor films by thick-film and thin-film methods on the manufactured ceramic product. The results of functional tests of such manufactured sensors are presented, demonstrating their full suitability for gas sensing application and indicating that the obtained parameters are at a level comparable to those of industrial produced sensors. Results of design and optimization principles of applied methods for micro- and nanosystems are discussed with regard to future, wider application in semiconductor gas sensors prototyping.

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Fabrication of a Carbon Nanotube Gas Sensor Microelectrodes and its Application for Ammonia Detection

Applied Mechanics and Materials ◽

10.4028/www.scientific.net/amm.431.306 ◽

2013 ◽

Vol 431 ◽

pp. 306-311

Author(s):

Xiang Tao Ran ◽

Zhi Wang ◽

Li Yang

Keyword(s):

Gas Sensors ◽

High Performance ◽

Gas Sensing ◽

Structural Parameters ◽

Low Cost ◽

Manufacturing Method ◽

Multi Walled Carbon Nanotubes ◽

Ammonia Detection ◽

Low Cost Manufacturing ◽

Walled Carbon Nanotubes

With the increasing needs for high-performance gas sensors in industrial production, environmental monitoring and so on, the research on gas sensors is becoming more and more important. In this paper, the electric field intensity distribution simulation process of the interdigital microelectrodes (IMEs) is discussed in details to get the proper electrode structural parameters. The IMEs on the ITO surface with a minimum gap of about 4μm are achieved by lithography, which provides a reliable, low-cost manufacturing method. Sensitive components are made of the multi-walled carbon nanotubes modified materials. The gas-sensing property of the sensor is detected for ammonia. The experiment result shows that the performance of the nanomodified sensor is obviously improved.

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Nanocrystalline Materials as Potential Gas Sensing Elements

MRS Proceedings ◽

10.1557/proc-501-33 ◽

1997 ◽

Vol 501 ◽

Cited By ~ 3

Author(s):

G. S. V. Coles ◽

G. Williams

Keyword(s):

Gas Sensors ◽

Nanocrystalline Materials ◽

Tin Dioxide ◽

Gas Sensing ◽

Electronics Industry ◽

Laser Evaporation ◽

Foreseeable Future ◽

Specific Context ◽

Semiconductor Gas Sensors ◽

Cost Of Materials

ABSTRACTSensors and Transducers, and in the specific context of this paper gas sensors, are currently amongst the largest growth areas in the modem electronics industry and this seems likely to continue for the foreseeable future. Nanocrystalline materials posses many properties that could make them ideal as potential gas sensing elements with many advantages over their microcrystalline counterparts. Most importantly these include increased surface area coupled with reduced sintering temperatures and times. However, it should also be noted that there are several disadvantages including the comparatively high cost of materials and increased electrical resistance.This paper reviews the operating mechanisms of semiconductor gas sensors and the possible advantages of using nano sized powders to produce gas sensitive devices. Results are presented which have been obtained from several materials produced by laser evaporation including alumina (Al2O3), zirconia (ZrO2), and tin dioxide (SnO2) in contaminated atmospheres incorporating carbon monoxide, hydrogen and methane.

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Pure and Pr-doped Ce4W9O33 with superior hydroxyl scavenging ability: Humidity-independent oxide chemiresistors

Journal of Materials Chemistry A ◽

10.1039/d1ta02618f ◽

2021 ◽

Author(s):

Jun-Sik Kim ◽

Ki Beom Kim ◽

Huayao Li ◽

Chan Woong Na ◽

Kyeorei Lim ◽

...

Keyword(s):

Gas Sensors ◽

Gas Sensing ◽

Oxide Semiconductor ◽

Semiconductor Gas Sensors ◽

First Time ◽

Sensing Characteristics ◽

Standing Problem

Water poisoning has been a long-standing problem in oxide semiconductor gas sensors. Herein, for the first time, we report that pure and Pr-doped Ce4W9O33 provide humidity-independent gas sensing characteristics. The...

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Consideration for Oxygen Adsorption Species on SnO2 Semiconductor Gas Sensors

Proceedings ◽

10.3390/proceedings2019014018 ◽

2019 ◽

Vol 14 (1) ◽

pp. 18

Author(s):

Kengo Shimanoe ◽

Takaharu Mizukami ◽

Koichi Suematsu ◽

Ken Watanabe

Keyword(s):

Water Vapor ◽

Gas Sensors ◽

Gas Sensing ◽

Oxygen Adsorption ◽

Sensing Properties ◽

Gas Sensing Properties ◽

Semiconductor Gas Sensors ◽

Adsorption Species

Water vapor is the most important factor to influence on gas sensing properties. […]

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Effect of Foreign Metal Doping on the Gas Sensing Behaviors of SnO2-Based Gas Sensor

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.47-50.1502 ◽

2008 ◽

Vol 47-50 ◽

pp. 1502-1505

Author(s):

Kouichi Suematsu ◽

Takanori Honda ◽

Masayoshi Yuasa ◽

Tetsuya Kida ◽

Kengo Shimanoe ◽

...

Keyword(s):

Carrier Concentration ◽

Gas Sensors ◽

Gas Sensing ◽

Power Laws ◽

Material Design ◽

Theoretical Models ◽

Electric Resistance ◽

Relative Resistance ◽

Partial Pressures ◽

Semiconductor Gas Sensors

Recently, we have proposed some theoretical models, power laws and effect of particle shape and size, for semiconductor gas sensors. The models show that a depletion theory of semiconductor can be combined with the dynamics of adsorption and/or reactions of gases on the surface. In the case of SnO2, the relative resistance (R/R0) is proportional to PO 2 n, where n is a constant value (n=1/2) on oxygen partial pressure. In addition, carrier concentration in SnO2 influences depth of the depletion. In this study, to experimentally reveal such effects, we tried to control the carrier concentration in SnO2 by foreign doping and examined their electrical resistance and sensor response. Correlations between doping concentration, crystalline size, and partial pressures of oxygen and H2 on the electric resistance are discussed to reveal the material design for semiconductor gas sensors.

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Light-Assisted Enhancement of Gas Sensing Property for Micro-Nanostructure Electronic Device: A Mini Review

Frontiers in Chemistry ◽

10.3389/fchem.2021.811074 ◽

2021 ◽

Vol 9 ◽

Author(s):

Zongtao Ma ◽

Ziying Wang ◽

Lingxiao Gao

Keyword(s):

Gas Sensors ◽

High Performance ◽

Electronic Device ◽

Gas Sensing ◽

Uv Light ◽

Light Activation ◽

Gas Sensitivity ◽

Nano Fabrication ◽

Response And Recovery ◽

Visible Light Activation

In recent years, gas sensing electronic devices have always attracted wide attention in the field of environment, industry, aviation and others. In order to improve the gas sensing properties, many micro- and nano-fabrication technologies have been proposed and investigated to develop high-performance gas sensing devices. It is worth noting that light irradiation is an effective strategy to enhance gas sensitivity, shorten the response and recovery time, reduce operating temperature. In this review, firstly, the latest research advances of gas sensors based on different micro-nanostructure materials under UV light and visible light activation is introduced. Then, the gas sensing mechanism of light-assisted gas sensor is discussed in detail. Finally, this review describes the present application of gas sensors with improved properties under light activation assisted conditions and the perspective of their applications.

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Inhomogeneous Oxygen Vacancy Distribution in Semiconductor Gas Sensors: Formation, Migration and Determination on Gas Sensing Characteristics

Sensors ◽

10.3390/s17081852 ◽

2017 ◽

Vol 17 (8) ◽

pp. 1852 ◽

Cited By ~ 14

Author(s):

Jianqiao Liu ◽

Yinglin Gao ◽

Xu Wu ◽

Guohua Jin ◽

Zhaoxia Zhai ◽

...

Keyword(s):

Oxygen Vacancy ◽

Gas Sensors ◽

Gas Sensing ◽

Vacancy Distribution ◽

Semiconductor Gas Sensors ◽

Sensing Characteristics

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Effects of Hexamethyldisilazane Modification on Gas-Sensing Properties of Semiconductor Gas Sensors

ECS Transactions ◽

10.1149/09812.0067ecst ◽

2020 ◽

Vol 98 (12) ◽

pp. 67-73

Author(s):

Taro Ueda ◽

Hiroto Fukuura ◽

Kai Kamada ◽

Takeo Hyodo ◽

Yasuhiro Shimizu

Keyword(s):

Gas Sensors ◽

Gas Sensing ◽

Sensing Properties ◽

Gas Sensing Properties ◽

Semiconductor Gas Sensors

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MoS2 Nanosheets Sensitized with Quantum Dots for Room-Temperature Gas Sensors

Nano-Micro Letters ◽

10.1007/s40820-020-0394-6 ◽

2020 ◽

Vol 12 (1) ◽

Cited By ~ 5

Author(s):

Jingyao Liu ◽

Zhixiang Hu ◽

Yuzhu Zhang ◽

Hua-Yao Li ◽

Naibo Gao ◽

...

Keyword(s):

Quantum Dots ◽

Gas Sensors ◽

High Performance ◽

Large Scale ◽

Room Temperature ◽

Gas Sensing ◽

Low Cost ◽

Surface And Interface ◽

Sensor Performance ◽

Semiconductor Gas Sensors

AbstractThe Internet of things for environment monitoring requires high performance with low power-consumption gas sensors which could be easily integrated into large-scale sensor network. While semiconductor gas sensors have many advantages such as excellent sensitivity and low cost, their application is limited by their high operating temperature. Two-dimensional (2D) layered materials, typically molybdenum disulfide (MoS2) nanosheets, are emerging as promising gas-sensing materials candidates owing to their abundant edge sites and high in-plane carrier mobility. This work aims to overcome the sluggish and weak response as well as incomplete recovery of MoS2 gas sensors at room temperature by sensitizing MoS2 nanosheets with PbS quantum dots (QDs). The huge amount of surface dangling bonds of QDs enables them to be ideal receptors for gas molecules. The sensitized MoS2 gas sensor exhibited fast and recoverable response when operated at room temperature, and the limit of NO2 detection was estimated to be 94 ppb. The strategy of sensitizing 2D nanosheets with sensitive QD receptors may enhance receptor and transducer functions as well as the utility factor that determine the sensor performance, offering a powerful new degree of freedom to the surface and interface engineering of semiconductor gas sensors.

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