The Growth of Si on SiC Complex Substrate by CVD

2012 ◽  
Vol 490-495 ◽  
pp. 3840-3844
Author(s):  
W. Cheng ◽  
P. Han ◽  
F. Yu ◽  
L. Yu ◽  
L.H. Cheng ◽  
...  
Keyword(s):  
Chemical Vapor ◽  
Crystalline Quality ◽  
X Ray Diffraction ◽  
Crystalline Orientation ◽  
X Ray ◽  
Measurement Results ◽  
Different Temperatures ◽  
P Type ◽  
Sic Film ◽  
Sic Films

In this work, the Si layer is deposited on the SiC complex substrate which is composed of Si(111) substrate and 3C-SiC film grown on it. These Si and 3C–SiC films grown under different temperatures in a chemical vapor deposition system are analyzed. The crystalline orientation, the crystalline quality and the conduction type of the films are measured by X-ray diffraction, Raman scattering ,Scanning electron microscope, and 1150 °C is found the optimized temperature for the epitaxial growth of SiC film grown on the carbonized layer. Measurement results also show that the epitaxial layer is n-type 3C-SiC which has the same crystalline orientation with the Si (111) substrate. Si film grown on the SiC complex substrate under the temperature of 690 °C has the best crystalline quality. This film is composed of p-type monocrystal Si and has the same crystalline orientation with the substrate.

AlxGa1-xN-Based Materials and Heterostructures

1996 ◽  
Vol 449 ◽  
Author(s):  
P. Kung ◽  
A. Saxler ◽  
D. Walker ◽  
X. Zhang ◽  
R. Lavado ◽  
...  
Keyword(s):  
Chemical Vapor ◽  
Bragg Reflectors ◽  
X Ray Diffraction ◽  
Chemical Vapor Deposition Growth ◽  
X Ray ◽  
Sapphire Substrates ◽  
Transmission Electron ◽  
Dimensional Electron Gas ◽  
P Type

ABSTRACTWe present the metalorganic chemical vapor deposition growth, n-type and p-type doping and characterization of AlxGa1-xN alloys on sapphire substrates. We report the fabrication of Bragg reflectors and the demonstration of two dimensional electron gas structures using AlxGa1-xN high quality films. We report the structural characterization of the AlxGa1-xN / GaN multilayer structures and superlattices through X-ray diffraction and transmission electron microscopy. A density of screw and mixed threading dislocations as low as 107 cm-2 was estimated in AlxGa1-xN / GaN structures. The realization of AlxGa1-xN based UV photodetectors with tailored cut-off wavelengths from 365 to 200 nm are presented.

Hot-mesh Chemical Vapor Deposition for 3C-SiC Growth on Si and SiO2

2005 ◽  
Vol 862 ◽  
Author(s):  
Kanji Yasui ◽  
Jyunpei Eto ◽  
Yuzuru Narita ◽  
Masasuke Takata ◽  
Tadashi Akahane
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Rocking Curve ◽  
Mesh Structure ◽  
X Ray ◽  
Si Substrates ◽  
Substrate Temperatures ◽  
Sic Films

AbstractThe crystal growth of SiC films on (100) Si and thermally oxidized Si (SiO2/Si) substrates by hot-mesh chemical vapor deposition (HMCVD) using monomethylsilane as a source gas was investigated. A mesh structure of hot tungsten (W) wire was used as a catalyzer. At substrate temperatures above 750°C and at a mesh temperature of 1600°C, 3C-SiC crystal was epitaxially grown on (100) Si substrates. From the X-ray rocking curve spectra of the (311) peak, SiC was also epitaxially grown in the substrate plane. On the basis of the X-ray diffraction (XRD) measurements, on the other hand, the growth of (100)-oriented 3C-SiC films on SiO2/Si substrates was determined to be achieved at substrate temperatures of 750-800°C, while polycrystalline SiC films, at substrate temperatures above 850°C. From the dependence of growth rate on substrate temperature and W-mesh temperature, the growth mechanism of SiC crystal by HMCVD was discussed.

Oxidation of Gallium Nitride Epilayers in Dry Oxygen

1999 ◽  
Vol 595 ◽  
Author(s):  
P. Chen ◽  
R. Zhang ◽  
X.F. Xu ◽  
Z.Z. Chen ◽  
Y.G. Zhou ◽  
...  
Keyword(s):  
Diffusion Mechanism ◽  
Chemical Vapor ◽  
Oxide Surface ◽  
Layer By Layer ◽  
X Ray Diffraction ◽  
X Ray ◽  
Sapphire Substrates ◽  
Different Temperatures ◽  
Diffraction Peaks ◽  
And Diffusion

AbstractThe oxidation of GaN epilayers in dry oxygen has been studied. The 1-μm-thick GaN epilayers grown on (0001) sapphire substrates by Rapid-Thermal-Processing/Low Pressure Metalorganic Chemical Vapor Deposition were used in this work. The oxidation of GaN in dry oxygen was performed at various temperatures for different time. The oxide was identified as the monoclinic β-Ga2O3 by a θ-2θ scan X-ray diffraction (XRD). The scanning electron microscope observation shows a rough oxide surface and an expansion of the volume. XRD data also showed that the oxidation of GaN began to occur at 800°C. The GaN diffraction peaks disappeared at 1050°C for 4 h or at 1100°C for 1 h, which indicates that the GaN epilayers has been completely oxidized. From these results, it was found that the oxidation of GaN in dry oxygen was not layer-by-layer and limited by the interfacial reaction and diffusion mechanism at different temperatures.

CVD Epitaxial Growth of 4H-SiC on Porous SiC Substrates

2006 ◽  
Vol 527-529 ◽  
pp. 255-258
Author(s):  
Y. Shishkin ◽  
Yue Ke ◽  
Fei Yan ◽  
Robert P. Devaty ◽  
Wolfgang J. Choyke ◽  
...  
Keyword(s):  
Vapor Deposition ◽  
Structural Integrity ◽  
Chemical Vapor ◽  
Growth Speed ◽  
X Ray Diffraction ◽  
X Ray ◽  
Porous Layers ◽  
Porous Sic ◽  
Sic Films

Hot-wall chemical vapor deposition has been used to epitaxially grow SiC layers on porous n-type 4H-SiC substrates. The growth was carried out at different speeds on porous layers of two different thicknesses. The quality of the SiC films was evaluated by X-ray diffraction and photoluminescence techniques. Based on the measurements, both the growth speed and the thickness of the porous layer buried underneath the epilayers do not appear to influence the structural integrity of the films. The intensity of the near bandedge low temperature photoluminescence appears stronger by a factor of two in films grown on porous layers.

Crystalline Orientation of PbTiO3 Nanorods Grown by MOCVD Using ZnO Nanorods as a Template

2011 ◽  
Vol 1292 ◽  
Author(s):  
Hironori Fujisawa ◽  
Masaru Shimizu ◽  
Ryohei Kuri ◽  
Seiji Nakashima ◽  
Yasutoshi Kotaka ◽  
...  
Keyword(s):  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Zno Nanorods ◽  
Chemical Vapor ◽  
Piezoresponse Force Microscopy ◽  
Xrd Analysis ◽  
X Ray Diffraction ◽  
Crystalline Orientation ◽  
X Ray ◽  
Force Microscopy

ABSTRACTPbTiO3-covered ZnO nanorods were grown on Al2O3$\left({11\bar 20} \right)$ by metalorganic chemical vapor deposition (MOCVD), and their crystalline orientation was investigated by x-ray diffraction (XRD). Structural analysis by scanning electron microscopy and XRD revealed that the hexagonal ZnO nanorods had $\left\{ {10\bar 10} \right\}$-side facets. XRD analysis of PbTiO3 thin films on ZnO$\left({10\bar 10} \right)$/Al2O3$\left({10\bar 10} \right)$revealed that PbTiO3 was epitaxially grown on ZnO$\left({10\bar 10} \right)$, showing 6 variants of crystallites with the c-axis tilted either 27o or 69o from the surface normal to the ZnO$\left({10\bar 10} \right)$ plane. Effective piezoelectric coefficients calculated for the 27o and 69o-crystallites using piezoresponse force microscopy confirm that deformation of nanorods and nanotubes contributed to the large electrically-induced strain along the radial direction.

scholarly journals Oxidation of Gallium Nitride Epilayers in Dry Oxygen

2000 ◽  
Vol 5 (S1) ◽  
pp. 866-872 ◽  
Author(s):  
P. Chen ◽  
R. Zhang ◽  
X.F. Xu ◽  
Z.Z. Chen ◽  
Y.G. Zhou ◽  
...  
Keyword(s):  
Diffusion Mechanism ◽  
Chemical Vapor ◽  
Oxide Surface ◽  
Layer By Layer ◽  
X Ray Diffraction ◽  
X Ray ◽  
Sapphire Substrates ◽  
Different Temperatures ◽  
Diffraction Peaks ◽  
And Diffusion

The oxidation of GaN epilayers in dry oxygen has been studied. The 1-µm-thick GaN epilayers grown on (0001) sapphire substrates by Rapid-Thermal-Processing/Low Pressure Metalorganic Chemical Vapor Deposition were used in this work. The oxidation of GaN in dry oxygen was performed at various temperatures for different time. The oxide was identified as the monoclinic β-Ga2O3 by a θ−2θ scan X-ray diffraction (XRD). The scanning electron microscope observation shows a rough oxide surface and an expansion of the volume. XRD data also showed that the oxidation of GaN began to occur at 800°C. The GaN diffraction peaks disappeared at 1050°C for 4 h or at 1100°C for 1 h, which indicates that the GaN epilayers has been completely oxidized. From these results, it was found that the oxidation of GaN in dry oxygen was not layer-by-layer and limited by the interfacial reaction and diffusion mechanism at different temperatures.

Effect of Propane on Low Temperature Growth of 3C-SiC Film on Si (111) by Plasma Assisted CVD

2012 ◽  
Vol 717-720 ◽  
pp. 181-184
Author(s):  
Hideki Shimizu ◽  
Takashi Watanabe
Keyword(s):  
Substrate Temperature ◽  
Flow Rate ◽  
Crystalline Quality ◽  
X Ray Diffraction ◽  
Temperature Growth ◽  
Transmission Electron ◽  
Good Crystalline Quality ◽  
Sic Film ◽  
Sic Films

To demonstrate the formation of 3C-SiC film on Si (111) at low substrate temperature, the effects of C3H8 on the crystalline quality of the 3C-SiC films on Si (111) have been investigated by changing the flow rate of C3H8 at the substrate temperature of 950 °C. The crystalline quality has been investigated by transmission electron microscope and X-ray diffraction. 3C-SiC is epitaxially grown on Si(111) and the 3C-SiC films are in either near single crystalline or highly oriented form with stacking faults and twin. It is expected that the film with good crystalline quality may grow at around 2.5 in the ratio of the flow rate of C3H8 to SiH4 and any microstructures of 3C-SiC films on Si (111) can be controlled by accurately controlling the ratio of C/Si.

Effect of Growth Temperature on the Indium Incorporation in InGaN Epitaxial Films

2011 ◽  
Vol 287-290 ◽  
pp. 1456-1459 ◽  
Author(s):  
P. C Chang ◽  
C. L Yu ◽  
Y. W Jahn ◽  
S. J Chang ◽  
K. H Lee
Keyword(s):  
Optoelectronic Devices ◽  
Chemical Vapor ◽  
Epitaxial Films ◽  
Effect Of Temperature ◽  
X Ray Diffraction ◽  
Film Properties ◽  
X Ray ◽  
Different Temperatures ◽  
Peak Emission

InxGa1-xN epilayers have been grown by metalorganic chemical vapor deposition (MOCVD) at different temperatures between 740°C to 830°C. The thickness of InGaN film is 50nm for all samples. The incorporation of indium is found to increase with decreasing grown temperature. The optical properties and film quality of the samples have been investigated by photoluminescence (PL) system and X-ray diffraction (XRD). The Full Width at Half Maximum (FWHM) of PL and XRD decreases with increasing the grown temperature. We also found that the peak emission of PL shifts with changing the grown temperature. The effect of temperature on the film properties was determined. This understanding will lead to better quality control of the optoelectronic devices.

Dielectric Property of Si3N4/SiBCN Composite Ceramics Doped with SiC

2013 ◽  
Vol 748 ◽  
pp. 91-95
Author(s):  
Fang Ye ◽  
Li Tong Zhang ◽  
Xiao Wei Yin ◽  
Ya Jun Zhang ◽  
Yong Sheng Liu ◽  
...  
Keyword(s):  
Energy Dispersive Spectrometer ◽  
Chemical Vapor ◽  
Chemical Vapor Infiltration ◽  
Composite Ceramics ◽  
X Ray Diffraction ◽  
Sic Nanoparticles ◽  
X Ray ◽  
Absorbing Material ◽  
Absorbing Property ◽  
Sic Film

Si3N4/SiBCN composite ceramics were prepared by infiltrating and pyrolyzing liquid polyborosilazane in porous Si3N4 ceramics. To increase their wave-absorbing ability, SiC nanoparticles and SiC film obtained by chemical vapor infiltration were separately introduced into the composite ceramics. The surface morphology, element and phase composition of ceramics were analyzed by means of scanning electron microscopy, energy dispersive spectrometer and X-ray diffraction. Dielectric and electromagnetic wave absorbing property researches show that the permittivity and dielectric loss of the ceramics were effectively improved and the electromagnetic reflection coefficient was visibly decreased when SiC was loaded. It is indicated that SiC is an effective dielectric lossy absorbent, and the Si3N4/SiBCN composite ceramics containing SiC possess the great potential in the application of wave-absorbing material.

Characterization of p-type 4H-SiC epitaxial layer grown on (11-20) substrate

2001 ◽  
Vol 680 ◽  
Author(s):  
Kazutoishi Kojima ◽  
Toshiyuki Ohno ◽  
Mituhiro Kushibe ◽  
Koh Masahara ◽  
Yuuki Ishida ◽  
...  
Keyword(s):  
Boron Concentration ◽  
Hole Mobility ◽  
Crystalline Quality ◽  
Diffraction Measurement ◽  
X Ray Diffraction ◽  
X Ray ◽  
Hall Effect Measurements ◽  
P Type ◽  
Incorporation Efficiency

ABSTRACTGrowth and characterization of p-type 4H-SiC epitaxial layers grown on (11-20) substrates are reported. P-type 4H-SiC epilayers with smooth surface morphology have been grown on (11-20) substrates by low-pressure, hot-wall type CVD with SiH4–C3H8–H2–TMA system. The doping concentration can be controlled in the range from about 1×1016cm−3 to 1×1019cm−3. Anisotropy of the crystalline quality is observed by x-ray diffraction measurement. P-type epilayers, in which near band-gap emissions are dominated and D-A pair peak is not observed, are obtained. Hole mobility of (11-20) epilayers is smaller than that of (0001) epilayers probably due to the lack of crystalline quality compared to (0001) epilayers. The results of both low-temperature photoluminescence and the temperature dependence of Hall effect measurements indicate that the boron concentration as undoped impurity in (11-20) epilayer is lower than that of (0001) epilayer. This may be caused by the smaller incorporation efficiency of boron into (11-20) epilayer than that of (0001) epilayer.

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