Characterization of p-type 4H-SiC epitaxial layer grown on (11-20) substrate

2001 ◽  
Vol 680 ◽  
Author(s):  
Kazutoishi Kojima ◽  
Toshiyuki Ohno ◽  
Mituhiro Kushibe ◽  
Koh Masahara ◽  
Yuuki Ishida ◽  
...  
Keyword(s):  
Boron Concentration ◽  
Hole Mobility ◽  
Crystalline Quality ◽  
Diffraction Measurement ◽  
X Ray Diffraction ◽  
X Ray ◽  
Hall Effect Measurements ◽  
P Type ◽  
Incorporation Efficiency

ABSTRACTGrowth and characterization of p-type 4H-SiC epitaxial layers grown on (11-20) substrates are reported. P-type 4H-SiC epilayers with smooth surface morphology have been grown on (11-20) substrates by low-pressure, hot-wall type CVD with SiH4–C3H8–H2–TMA system. The doping concentration can be controlled in the range from about 1×1016cm−3 to 1×1019cm−3. Anisotropy of the crystalline quality is observed by x-ray diffraction measurement. P-type epilayers, in which near band-gap emissions are dominated and D-A pair peak is not observed, are obtained. Hole mobility of (11-20) epilayers is smaller than that of (0001) epilayers probably due to the lack of crystalline quality compared to (0001) epilayers. The results of both low-temperature photoluminescence and the temperature dependence of Hall effect measurements indicate that the boron concentration as undoped impurity in (11-20) epilayer is lower than that of (0001) epilayer. This may be caused by the smaller incorporation efficiency of boron into (11-20) epilayer than that of (0001) epilayer.

Properties of Sputter Deposited ZnO Films Co-doped with Lithium and Phosphorus

2013 ◽  
Vol 1494 ◽  
pp. 77-82
Author(s):  
T. N. Oder ◽  
A. Smith ◽  
M. Freeman ◽  
M. McMaster ◽  
B. Cai ◽  
...  
Keyword(s):  
Rf Magnetron Sputtering ◽  
Zno Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Sapphire Substrates ◽  
Hall Effect Measurements ◽  
Sputter Deposited ◽  
P Type ◽  
Post Deposition ◽  
Co Doped

ABSTRACTThin films of ZnO co-doped with lithium and phosphorus were deposited on sapphire substrates by RF magnetron sputtering. The films were sequentially deposited from ultra pure ZnO and Li3PO4 solid targets. Post deposition annealing was carried using a rapid thermal processor in O2 and N2 at temperatures ranging from 500 °C to 1000 °C for 3 min. Analyses performed using low temperature photoluminescence spectroscopy measurements reveal luminescence peaks at 3.359, 3.306, 3.245 eV for the co-doped samples. The x-ray diffraction 2θ-scans for all the films showed a single peak at about 34.4° with full width at half maximum of about 0.17°. Hall Effect measurements revealed conductivities that change from p-type to n-type over time.

AlxGa1-xN-Based Materials and Heterostructures

1996 ◽  
Vol 449 ◽  
Author(s):  
P. Kung ◽  
A. Saxler ◽  
D. Walker ◽  
X. Zhang ◽  
R. Lavado ◽  
...  
Keyword(s):  
Chemical Vapor ◽  
Bragg Reflectors ◽  
X Ray Diffraction ◽  
Chemical Vapor Deposition Growth ◽  
X Ray ◽  
Sapphire Substrates ◽  
Transmission Electron ◽  
Dimensional Electron Gas ◽  
P Type

ABSTRACTWe present the metalorganic chemical vapor deposition growth, n-type and p-type doping and characterization of AlxGa1-xN alloys on sapphire substrates. We report the fabrication of Bragg reflectors and the demonstration of two dimensional electron gas structures using AlxGa1-xN high quality films. We report the structural characterization of the AlxGa1-xN / GaN multilayer structures and superlattices through X-ray diffraction and transmission electron microscopy. A density of screw and mixed threading dislocations as low as 107 cm-2 was estimated in AlxGa1-xN / GaN structures. The realization of AlxGa1-xN based UV photodetectors with tailored cut-off wavelengths from 365 to 200 nm are presented.

Structural Characterization of Ion Beam Enhanced Solid Phase Epitaxial Regrowth by Raman, RBS, and X-Ray Analysis

1988 ◽  
Vol 126 ◽  
Author(s):  
John F. Knudsen ◽  
R. C. Bowman ◽  
P. M. Adams ◽  
R. Newman ◽  
J. P. Hurrell ◽  
...  
Keyword(s):  
Solid Phase ◽  
Ion Beam ◽  
Beam Current ◽  
Crystalline Quality ◽  
X Ray Diffraction ◽  
X Ray ◽  
Epitaxial Regrowth ◽  
High Beam Current

ABSTRACTEpitaxial regrowth of deposited amorphous silicon has been previously described utilizing ion implantation amorphization, ion mixing and thermal anneal. This paper evaluates the effects of these process steps on crystalline quality utilizing Rutherford Backscattering (RBS), x-ray diffraction rocking curves and Raman scattering.In situ (during implantation) regrowth results in defective crystallinity. In contrast, when there is no in situ regrowth, the post anneal crystallinity is equivalent by RBS and x-ray evaluation to virgin single crystal wafers. In situ regrowth is most pronounced during the high beam current ion mixing type implants which produce wafer temperatures of about 250°C. The final crystalline quality which results from different sequences of amorphization and ion mixing implants, is strongly dependent upon the amount of in situ regrowth which has occurred. The greater the in situ regrowth the poorer the final crystalline quality.

Nitrogen-Doping Induced Optical Bandgap Widening of P-Type Cu2O Flms

2009 ◽  
Vol 1217 ◽  
Author(s):  
Yoshitaka Nakano ◽  
Shu Saeki ◽  
Takeshi Morikawa
Keyword(s):  
Photoelectron Spectroscopy ◽  
Structural Changes ◽  
Optical Bandgap ◽  
Bandgap Energy ◽  
X Ray Diffraction ◽  
X Ray ◽  
N Doping ◽  
Hall Effect Measurements ◽  
Optical Bandgap Energy ◽  
P Type

AbstractWe have investigated the effect of N doping into Cu2O films deposited by reactive magnetron sputtering. With increasing N-doping concentration up to 3 at.%, the optical bandgap energy is enlarged from ˜2.1 to ˜2.5 eV with retaining p-type conductivity as determined by optical absorption and Hall-effect measurements. Additionally, photoelectron spectroscopy in air measurements shows an increase in the valence and conduction band shifts with N doping. These experimental results demonstrate possible optical bandgap widening of p-type N-doped Cu2O films, which is a phenomenon that is probably associated with significant structural changes induced by N doping, as suggested from x-ray diffraction measurements.

Epitaxial growth and characterization of BP on Si(100) substrate for use in c-GaN study

2005 ◽  
Vol 891 ◽  
Author(s):  
Tomohiko Takeuchi ◽  
Suzuka Nishimura ◽  
Tomoyuki Sakuma ◽  
Satoru Matumoto ◽  
Kazutaka Terashima
Keyword(s):  
Epitaxial Layer ◽  
Careful Analysis ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
Cross Sectional ◽  
X Ray ◽  
Si Substrates ◽  
Impurity Doping ◽  
Hall Effect Measurements

ABSTRACTBoronmonophosphide(BP) is one of the suitable materials for a buffer layer between the c-GaN(100) and Si(100) substrates. The growth of BP layer was carried out by MOCVD on Si(100) substrate of 2 inch in diameter. The growth rate was over 2 μm/h without any troubles such as the bowing or cracking. In addition, the thickness of BP epitaxial layer was uniform over a wide area. A careful analysis of x-ray diffraction suggested that the growth of BP epitaxial layer inherited the crystal orientation from Si(100) substrate. Cross-sectional TEM images showed some defects like dislocations near the interface between BP layer and Si substrate. The Hall effect measurements indicated that the conduction type of BP films grown on the both n-Si and p-Si substrates was n-type without impurity doping, and that the mobility and carrier concentrations were typically 357cm2/Vs and 1.5×1020cm−3(on n-Si) and 63cm2/Vs and 1.9×1019cm−3(on p-Si), respectively. In addition, c-GaN was grown on the substrate of BP/Si(100) by RF-MBE.

The Growth of Si on SiC Complex Substrate by CVD

2012 ◽  
Vol 490-495 ◽  
pp. 3840-3844
Author(s):  
W. Cheng ◽  
P. Han ◽  
F. Yu ◽  
L. Yu ◽  
L.H. Cheng ◽  
...  
Keyword(s):  
Chemical Vapor ◽  
Crystalline Quality ◽  
X Ray Diffraction ◽  
Crystalline Orientation ◽  
X Ray ◽  
Measurement Results ◽  
Different Temperatures ◽  
P Type ◽  
Sic Film ◽  
Sic Films

In this work, the Si layer is deposited on the SiC complex substrate which is composed of Si(111) substrate and 3C-SiC film grown on it. These Si and 3C–SiC films grown under different temperatures in a chemical vapor deposition system are analyzed. The crystalline orientation, the crystalline quality and the conduction type of the films are measured by X-ray diffraction, Raman scattering ,Scanning electron microscope, and 1150 °C is found the optimized temperature for the epitaxial growth of SiC film grown on the carbonized layer. Measurement results also show that the epitaxial layer is n-type 3C-SiC which has the same crystalline orientation with the Si (111) substrate. Si film grown on the SiC complex substrate under the temperature of 690 °C has the best crystalline quality. This film is composed of p-type monocrystal Si and has the same crystalline orientation with the substrate.

ELECTRICAL CONDUCTING AND THERMOELECTRIC PROPERTIES OF Ba4Na2Nb10O30−Ba3NaLaNb10O30 SYSTEM

1990 ◽  
Vol 04 (10) ◽  
pp. 681-688
Author(s):  
MASAYUKI TSUKIOKA ◽  
YASUO TANOKURA ◽  
MASAZI SHIMAZU ◽  
SHINICHIRO KUROIWA ◽  
SADAO TSUTSUMI
Keyword(s):  
Electrical Resistivity ◽  
Seebeck Coefficient ◽  
Thermoelectric Properties ◽  
Solid Solutions ◽  
Diffraction Measurement ◽  
X Ray Diffraction ◽  
X Ray ◽  
Ceramic Samples ◽  
Electrical Conducting ◽  
P Type

Ceramic samples of BNN-BNLN ( Ba 4 Na 2 Nb 10 O 30− Ba 3 NaLaNb 10 O 30) system were prepared in flowing N 2 gas at about 1410°C, which has been confirmed to have continuous solid solutions over the whole range of BNN-BNLN system by X-ray diffraction measurement. Electrical resistivity and Seebeck coefficient measurements were carried out at temperatures from 77 K to 773 K and from 60 K to 200 K, respectively for the samples of different composition belonging to the BNN-BNLN system. These experiments revealed that all these materials were extrinsic semiconductors and change from p-type semiconductors to n-type during the process of rising temperature.

Synthesis and Characterization of Delafossite CuLaO2 for Thermoelectric Application

2007 ◽  
Vol 534-536 ◽  
pp. 1081-1084 ◽  
Author(s):  
Yuhsuke Takahashi ◽  
Hiroaki Matsushita ◽  
Akinori Katsui
Keyword(s):  
Seebeck Coefficient ◽  
Single Phase ◽  
Metallic Copper ◽  
Solid State Reaction Method ◽  
X Ray Diffraction ◽  
Mixed Powder ◽  
X Ray ◽  
Type Semiconductor ◽  
P Type

The preparation of single-phase CuLaO2 with delafossite-type structure by means of the solid-state reaction method was investigated using X-ray diffraction. The results showed that notwhistanding the fact that there was a trace of metallic copper, nearly single-phase CuLaO2 was obtained by using La(OH)3 as a lanthanum source and by firing the mixed powder with nonstoichiometric composition ratio of La(OH)3:Cu2O =1:1.425 in a vacuum at 1273 K for 10 h. The measurement of electrical conductivity and Seebeck coefficient showed that CuLaO2 thus obtained was a p-type semiconductor and had a Seebeck coefficient of approximately 70 /V/K.

X-ray diffraction measurement of doping induced lattice mismatch in n-type 4H-SiC epilayers grown on p-type substrates

2003 ◽  
Vol 83 (10) ◽  
pp. 1971-1973 ◽  
Author(s):  
Robert S. Okojie ◽  
Thomas Holzheu ◽  
XianRong Huang ◽  
Michael Dudley
Keyword(s):  
Lattice Mismatch ◽  
Diffraction Measurement ◽  
X Ray Diffraction ◽  
X Ray ◽  
P Type

scholarly journals Influence of thickness on the structure and electrical, optical properties of N-doped SnO2 film

2020 ◽  
Vol 2 (4) ◽  
pp. 240-245
Author(s):  
Nguyen Thanh Tung ◽  
Phuc Huu Dang ◽  
Tran Le
Keyword(s):  
Refractive Index ◽  
Electrical Properties ◽  
Optical Sensors ◽  
Extinction Coefficient ◽  
Optical Constants ◽  
Hole Mobility ◽  
X Ray Diffraction ◽  
Mixed Gas ◽  
X Ray ◽  
P Type

N-doped SnO2 films with varying thickness (320, 420, 520, 620, and 720 nm) were deposited at 300oC in mixed – gas sputtering Ar/N (1:1) using DC magnetron sputtering. Influence of thickness on structure, optical constants (refractive index or extinction coefficient), and electrical properties were investigated by methods such as X-ray diffraction, Uv-Vis spectra, and Hall measurement. The results show that crystalline quality and optical constants improve with increasing thickness. Specifically, NTO – 620 film has the best crystal structure and maximum values ​​such as crystal size, refractive index, and carrier mobility, as well as the lowest extinction coefficient. Also, NTO films have a cubic structure with (111) peak as the preferred peak. Besides, the hole mobility increases with the increase of the thickness and reaches the maximum value of 14.95 cm2V-1s-1 for NTO – 620 films. The electrical properties of p-type NTO films were verified by X-ray electron spectroscopy (XPS) and I-V characteristic of p – NTO/n – Si heterojunction under illumination. P-type NTO – 620 films were fabricated on n-type Si substrate had a light-to-dark current ratio of 58 at - 6V, these results showed that p-type NTO films might have a promising future in optical sensors applications.

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