CVD Epitaxial Growth of 4H-SiC on Porous SiC Substrates

2006 ◽  
Vol 527-529 ◽  
pp. 255-258
Author(s):  
Y. Shishkin ◽  
Yue Ke ◽  
Fei Yan ◽  
Robert P. Devaty ◽  
Wolfgang J. Choyke ◽  
...  
Keyword(s):  
Vapor Deposition ◽  
Structural Integrity ◽  
Chemical Vapor ◽  
Growth Speed ◽  
X Ray Diffraction ◽  
X Ray ◽  
Porous Layers ◽  
Porous Sic ◽  
Sic Films

Hot-wall chemical vapor deposition has been used to epitaxially grow SiC layers on porous n-type 4H-SiC substrates. The growth was carried out at different speeds on porous layers of two different thicknesses. The quality of the SiC films was evaluated by X-ray diffraction and photoluminescence techniques. Based on the measurements, both the growth speed and the thickness of the porous layer buried underneath the epilayers do not appear to influence the structural integrity of the films. The intensity of the near bandedge low temperature photoluminescence appears stronger by a factor of two in films grown on porous layers.

Hot-mesh Chemical Vapor Deposition for 3C-SiC Growth on Si and SiO2

2005 ◽  
Vol 862 ◽  
Author(s):  
Kanji Yasui ◽  
Jyunpei Eto ◽  
Yuzuru Narita ◽  
Masasuke Takata ◽  
Tadashi Akahane
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Rocking Curve ◽  
Mesh Structure ◽  
X Ray ◽  
Si Substrates ◽  
Substrate Temperatures ◽  
Sic Films

AbstractThe crystal growth of SiC films on (100) Si and thermally oxidized Si (SiO2/Si) substrates by hot-mesh chemical vapor deposition (HMCVD) using monomethylsilane as a source gas was investigated. A mesh structure of hot tungsten (W) wire was used as a catalyzer. At substrate temperatures above 750°C and at a mesh temperature of 1600°C, 3C-SiC crystal was epitaxially grown on (100) Si substrates. From the X-ray rocking curve spectra of the (311) peak, SiC was also epitaxially grown in the substrate plane. On the basis of the X-ray diffraction (XRD) measurements, on the other hand, the growth of (100)-oriented 3C-SiC films on SiO2/Si substrates was determined to be achieved at substrate temperatures of 750-800°C, while polycrystalline SiC films, at substrate temperatures above 850°C. From the dependence of growth rate on substrate temperature and W-mesh temperature, the growth mechanism of SiC crystal by HMCVD was discussed.

scholarly journals Material Properties of GaN Films Grown on SiC/SOI Substrate

2008 ◽  
Vol 600-603 ◽  
pp. 1313-1316
Author(s):  
Zhe Chuan Feng ◽  
C. Tran ◽  
Ian T. Ferguson ◽  
J.H. Zhao
Keyword(s):  
Vapor Deposition ◽  
Material Properties ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
High Quality ◽  
X Ray ◽  
Metalorganic Chemical ◽  
Deposition Technology

Material properties of GaN thin films grown on 3C-SiC/semiconductor-on-insulator (SOI) substrate, by metalorganic chemical vapor deposition technology, are studied by X-ray diffraction, photoluminescence and Raman scattering, with data indicating the high quality of GaN films. Our results have shown that SiC/SOI structures obtained by carbonization have the potential to serve as useful substrates for GaN growth.

OMCVD of thin films from metal diketonates and triphenylbismuth

1990 ◽  
Vol 5 (6) ◽  
pp. 1169-1175 ◽  
Author(s):  
A. D. Berry ◽  
R. T. Holm ◽  
M. Fatemi ◽  
D. K. Gaskill
Keyword(s):  
Electron Microscopy ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Strontium Barium ◽  
X Ray ◽  
Scanning Electron

Films containing the metals copper, yttrium, calcium, strontium, barium, and bismuth were grown by organometallic chemical vapor deposition (OMCVD). Depositions were carried out at atmospheric pressure in an oxygen-rich environment using metal beta-diketonates and triphenylbismuth. The films were characterized by Auger electron spectroscopy, Nomarski and scanning electron microscopy, and x-ray diffraction. The results show that films containing yttrium consisted of Y2O3 with a small amount of carbidic carbon, those with copper and bismuth were mixtures of oxides with no detectable carbon, and those with calcium, strontium, and barium contained carbonates. Use of a partially fluorinated barium beta-diketonate gave films of BaF2 with small amounts of BaCO3.

Real-Time Composition And Thickness Control Techniques In A Metalorganic Chemical Vapor Deposition Process

1995 ◽  
Vol 406 ◽  
Author(s):  
M. S. Gaffneyt ◽  
C. M. Reavesl ◽  
A. L Holmes ◽  
R. S. Smith ◽  
S. P. DenBaars
Keyword(s):  
Chemical Vapor Deposition ◽  
Real Time ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Normal Operation ◽  
Growth Monitoring ◽  
X Ray Diffraction ◽  
X Ray ◽  
Metalorganic Chemical

AbstractMetalorganic chemical vapor deposition (MOCVD) is a process used to manufacture electronic and optoelectronic devices that has traditionally lacked real-time growth monitoring and control. We have developed control strategies that incorporate monitors as real-time control sensors to improve MOCVD growth. An analog control system with an ultrasonic concentration monitor was used to reject bubbler concentration disturbances which exist under normal operation, during the growth of a four-period GaInAs/InP superlattice. Using X-ray diffraction, it was determined that the normally occurring concentration variations led to a wider GaInAs peak in the uncompensated growths as compared to the compensated growths, indicating that closed loop control improved GaInAs composition regulation. In further analysis of the X-ray diffraction curves, superlattice peaks were used as a measure of high crystalline quality. The compensated curve clearly displayed eight orders of satellite peaks, whereas the uncompensated curve shows little evidence of satellite peaks.

Chemical Vapor Deposition of Strontium-Barium-Niobate

1991 ◽  
Vol 243 ◽  
Author(s):  
A. Greenwald ◽  
M. Horenstein ◽  
M. Ruane ◽  
W. Clouser ◽  
J. Foresi
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Strontium Barium Niobate ◽  
Electrical And Optical Properties ◽  
Strontium Barium ◽  
X Ray ◽  
Boston University

AbstractSpire Corporation has deposited strontium-barium-niobate by chemical vapor deposition at atmospheric pressure using Ba(TMHD), Sr(TMHD), and Nb ethoxide. Deposition temperature as 550°C in an isothermal furnace. Films were deposited upon silicon (precoated with silica), platinum, sapphire, and quartz. Materials were characterized by RBS, X-ray diffraction, EDS, electron, and optical microscopy. Electrical and optical properties were measured at Boston University.

scholarly journals Исследование этапов превращения кремния в карбид кремния в процессе атомного замещения методами полного внешнего отражения рентгеновских лучей и рентгеновской дифрактомерии

2022 ◽  
Vol 64 (3) ◽  
pp. 326
Author(s):  
С.А. Кукушкин ◽  
А.В. Осипов ◽  
Е.В. Осипова ◽  
В.М. Стожаров
Keyword(s):  
Structural Quality ◽  
Total External Reflection ◽  
X Rays ◽  
Reflection Method ◽  
X Ray Diffraction ◽  
Modified Technique ◽  
Substitution Method ◽  
X Ray ◽  
Sic Films

X-ray diffraction and total external reflection of X-rays (X-ray reflectometry) methods were used to study the successive stages of synthesis of epitaxial SiC films on Si (100) X-ray diffraction and total external X-ray reflection (XRD) methods were used to study successive stages of synthesis of epitaxial SiC films on Si (100) surfaces, (110) and (111) surfaces by the atom substitution method. The data on the transformation evolution of (100) surfaces were studied, (110) and (111) Si, into SiC surfaces. A comparative analysis of the X-ray structural quality of the SiC layers grown on Si by the atom substitution method with the quality of SiC layers grown by Advanced Epi by the standard CVD method. A modified technique for the total outer X-ray reflection method, based on measurements of the intensity of the reflected X-rays using a special parabolic mirror. It is shown that the method of total external reflection method makes it possible to obtain important information about the degree of surface roughness of SiC layers, the evolution of their crystal structure and plasmon energy in the process of Si to SiC conversion.

Stress in Hydrogenated Microcrystalline Silicon Thin Films

1999 ◽  
Vol 557 ◽  
Author(s):  
D. Peiró ◽  
C. Voz ◽  
J. Bertomeu ◽  
J. Andreu ◽  
E. Martínez ◽  
...  
Keyword(s):  
Mechanical Properties ◽  
Vapor Deposition ◽  
Volume Fraction ◽  
Chemical Vapor ◽  
Hot Wire ◽  
X Ray Diffraction ◽  
Microcrystalline Silicon ◽  
X Ray ◽  
Silicon Thin Films ◽  
Abrupt Changes

AbstractHydrogenated microcrystalline silicon films have been obtained by hot-wire chemical vapor deposition (HWCVD) in a silane and hydrogen mixture at low pressure (<5 × 10-2 mbar). The structure of the samples and the residual stress were characterised by X- ray diffraction (XRD). Raman spectroscopy was used to estimate the volume fraction of the crystalline phase, which is in the range of 86 % to 98%. The stress values range between 150 and -140 MPa. The mechanical properties were studied by nanoindentation. Unlike monocrystalline wafers, there is no evidence of abrupt changes in the force-penetration plot, which have been attributed to a pressure-induced phase transition. The hardness was 12.5 GPa for the best samples, which is close to that obtained for silicon wafers.

The process and mechanism of the GaN nanoparticles formed by nitridation of β-Ga2O3 crystal

2017 ◽  
Vol 31 (10) ◽  
pp. 1750108 ◽  
Author(s):  
Xiao-Jun Cui ◽  
Liang-Ling Wang
Keyword(s):  
Vapor Deposition ◽  
Surface Defect ◽  
Chemical Vapor ◽  
Hexagonal Structure ◽  
X Ray Diffraction ◽  
Epitaxial Relationship ◽  
X Ray ◽  
Diffraction Peaks ◽  
Relationship Of ◽  
Gan Film

The process of conversion from [Formula: see text]-Ga2O3 single crystal to gallium nitride (GaN) in an atmosphere of NH3 by chemical vapor deposition is investigated. The surface morphology and microstructure of the GaN nanoparticles are observed by scanning electron microscope, which indicates that the growth of GaN is via the Volmer–Weber mechanism. The [Formula: see text]-Ga2O3 is firstly evaporated at high temperature to form the porous layer, followed by the surface-defect induced GaN nucleation formation. The crystalline structure and epitaxial relationship of the GaN nanoparticles are investigated by X-ray diffraction (XRD) via [Formula: see text]–[Formula: see text], showing GaN (0002) and (0004) diffraction peaks in the XRD spectra. It is concluded that the polycrystalline GaN film with hexagonal structure has a strong c-axis preferential orientation.

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