Investigation of Microstructure, Electrical and Decorative Properties of WO3 Film by PVD Magnetron Sputtering with Ar/O2

2012 ◽  
Vol 602-604 ◽  
pp. 1449-1452 ◽  
Author(s):  
Tao Liang Chuang ◽  
Chien Lung Huang ◽  
Yu Jia Gao ◽  
Chen Yu Hua
Keyword(s):  
Thin Film ◽  
Aqueous Solution ◽  
Stainless Steel ◽  
Color Change ◽  
Oxide Thin Film ◽  
Coating Film ◽  
Coating Characteristics ◽  
Color Transform ◽  
Pass Through ◽  
Reactive Gas

In this experiment, we use the opaque mirror stainless steel as the substrate to investigate decorative color variations after insertion of the Na+ ion in the film and prescribe the combination coating film with reversible and excellent coating characteristics. In manufacturing of the coating film, reactive gas pass through the metal tungsten target and form the amorphous tungsten oxide thin film on stainless steel and the various colors, such as green and pink color, on the mirror stainless by adjusting the process parameters. The coating film device then immerse in sodium bicarbonate aqueous solution and induce cyclic potential of -2V～+2V. Base color of stainless steel produce the color change reaction by inserting Na+ in the film. Experimental observations show that the green base color will transform to pink then blue and the pink base color transform to green then blue.

Lanthanum Aluminum Oxide Thin-Film Dielectrics from Aqueous Solution

2015 ◽  
Vol 7 (3) ◽  
pp. 1678-1684 ◽  
Author(s):  
Paul N. Plassmeyer ◽  
Kevin Archila ◽  
John F. Wager ◽  
Catherine J. Page
Keyword(s):  
Thin Film ◽  
Aqueous Solution ◽  
Aluminum Oxide ◽  
Oxide Thin Film ◽  
Lanthanum Aluminum Oxide ◽  
Thin Film Dielectrics

scholarly journals Tunable high-κ ZrxAl1−xOy thin film dielectrics from all-inorganic aqueous precursor solutions

RSC Advances ◽  
2017 ◽  
Vol 7 (62) ◽  
pp. 39147-39152 ◽  
Author(s):  
K. N. Woods ◽  
E. C. Waddington ◽  
C. A. Crump ◽  
E. A. Bryan ◽  
T. S. Gleckler ◽  
...  
Keyword(s):  
Thin Film ◽  
Aqueous Solution ◽  
Dielectric Properties ◽  
Aluminum Oxide ◽  
Oxide Thin Film ◽  
Solution Route ◽  
Thin Film Dielectrics ◽  
Film Dielectric ◽  
Inorganic Aqueous Solution

An all-inorganic, aqueous solution route enables facile control of composition and optimization of zirconium aluminum oxide thin film dielectric properties.

A Solution Processed ZnO Thin Film

2012 ◽  
Vol 239-240 ◽  
pp. 1585-1588 ◽  
Author(s):  
Yuh Chung Hu ◽  
David T.W. Lin ◽  
Hai Lin Lee ◽  
Pei Zen Chang
Keyword(s):  
Thin Film ◽  
Aqueous Solution ◽  
Zinc Oxide ◽  
Low Cost ◽  
Zinc Acetate Dihydrate ◽  
Oxide Thin Film ◽  
Zno Thin Film ◽  
Acetate Dihydrate ◽  
Zinc Oxide Thin Film ◽  
Environmentally Friendly Process

The effect of Zinc-Oxide (ZnO) thin film annealed in different ambiences is presented. To achieve low cost and environmentally friendly process, ZnO aqueous solution is synthesized by dissolving zinc acetate dihydrate in deionized water directly. Zinc oxide aqueous solution of high solubility and stability is presented. High quality and dense Zinc oxide thin film is formed by spin coating. Annealing temperatures are in the range of 300 °C~500 °C, and annealing ambiences of both air and N2 are discussed.

Low-Temperature, Aqueous-Solution-Processed Zinc Tin Oxide Thin Film Transistor

2011 ◽  
Vol 50 (7R) ◽  
pp. 070201 ◽  
Author(s):  
Jee Ho Park ◽  
Won Jin Choi ◽  
Jin Young Oh ◽  
Soo Sang Chae ◽  
Woo Soon Jang ◽  
...  
Keyword(s):  
Thin Film ◽  
Aqueous Solution ◽  
Low Temperature ◽  
Tin Oxide ◽  
Thin Film Transistor ◽  
Oxide Thin Film ◽  
Solution Processed ◽  
Zinc Tin Oxide

Optical band engineering of metal-oxynitride based on tantalum oxide thin film fabricated via reactive gas-timing RF magnetron sputtering

2016 ◽  
Vol 306 ◽  
pp. 346-350 ◽  
Author(s):  
N. Khemasiri ◽  
S. Jessadaluk ◽  
C. Chananonnawathorn ◽  
S. Vuttivong ◽  
T. Lertvanithphol ◽  
...  
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
Tantalum Oxide ◽  
Rf Magnetron Sputtering ◽  
Oxide Thin Film ◽  
Band Engineering ◽  
Reactive Gas

Low-temperature aqueous solution processed fluorine-doped zinc tin oxide thin-film transistors

2012 ◽  
Vol 2 (1) ◽  
pp. 17-22 ◽  
Author(s):  
Jun-Hyuck Jeon ◽  
Young Hwan Hwang ◽  
JungHo Jin ◽  
Byeong-Soo Bae
Keyword(s):  
Thin Film ◽  
Aqueous Solution ◽  
Low Temperature ◽  
Tin Oxide ◽  
Thin Film Transistors ◽  
Oxide Thin Film ◽  
Solution Processed ◽  
Zinc Tin Oxide ◽  
Image Position

Abstract

Preparation of Smooth Zinc Oxide Thin Film via Liquid Phase Reaction with Cation Additives

2008 ◽  
Vol 1113 ◽  
Author(s):  
Takeyasu Saito ◽  
Yoshihisa Hirata ◽  
Naoki Okamoto ◽  
Kazuo Kondo
Keyword(s):  
Thin Film ◽  
Aqueous Solution ◽  
Growth Rate ◽  
Surface Morphology ◽  
Oxide Thin Film ◽  
Zno Thin Films ◽  
Crystallographic Structure ◽  
Phase Reaction ◽  
Zinc Oxide Thin Film ◽  
Liquid Phase Reaction

ABSTRACTZnO thin films were deposited in a solution with Zn(NO3)2 and DMAB from 60 to 80°C. The effects of cation additives such as Mg, Ga and Al in a aqueous solution were investigated on surface morphology, crystallographic structure and growth rate. By adding 1E−4 mol/l of Ga or Al, the growth rate was enhanced from 0.13 m/h to 0.35-0.38 m/h. In addition, the surface morphology became flat in the case of Al addition.

Aqueous solution-deposited aluminum-gallium-oxide alloy gate dielectrics for low voltage fully oxide thin film transistors

2021 ◽  
Vol 119 (11) ◽  
pp. 112102
Author(s):  
Fuchao He ◽  
Yifei Wang ◽  
Zhenhua Lin ◽  
Jie Su ◽  
Jincheng Zhang ◽  
...  
Keyword(s):  
Thin Film ◽  
Aqueous Solution ◽  
Thin Film Transistors ◽  
Gallium Oxide ◽  
Low Voltage ◽  
Gate Dielectrics ◽  
Oxide Thin Film
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