Fabrication of High-Quality CuInSe2 Films by Coating, Compaction and Selenization

2012 ◽  
Vol 625 ◽  
pp. 287-290
Author(s):  
Jin Gang Xu ◽  
Yan Lai Wang ◽  
Hong Bo Nie
Keyword(s):  
Thin Films ◽  
Smooth Surface ◽  
Single Phase ◽  
X Ray Diffraction ◽  
High Quality ◽  
X Ray ◽  
New Phase ◽  
Cuinse2 Film ◽  
Selenization Process ◽  
Selenization Temperature

CuInSe2 thin films were successfully prepared by selenization of precursor films coated on the Mo foils. The precursor films were compacted to improve surface morphology and density of CuInSe2 thin films. The films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), and energy dispersive spectroscopy (EDS). The results indicate that the single-phase CuInSe2 is formed at 210 °C in selenization process and it exhibits preferred orientation along the (112) plane. The selenization temperature is above 210 °C, the selenization temperature rises to promote the crystallinity of selenized films, not to induce the occurrence of a new phase. The compact CuInSe2 film with smooth surface can be obtained by selenization of precursor films pressed with the pressure of 300 MPa.

Study of Raman Spectrum of Fe Doped CeO2 Thin Films Grown by Pulsed Laser Deposition

2010 ◽  
Vol 123-125 ◽  
pp. 375-378 ◽  
Author(s):  
Ram Prakash ◽  
Shalendra Kumar ◽  
Chan Gyu Lee ◽  
S.K. Sharma ◽  
Marcelo Knobel ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Single Phase ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Fe Doping ◽  
Full Width ◽  
Deposition Technique ◽  
X Ray Diffraction ◽  
X Ray

Ce1-xFexO2 (x=0, 0.01, 0.03 and 0.0 5) thin films were grown by pulsed laser deposition technique on Si and LaAlO3 (LAO) substrates. These films were deposited in vacuum and 200 mTorr oxygen partial pressure for both the substrates. These films were characterized by x-ray diffraction XRD and Raman spectroscopy measurements. XRD results reveal that these films are single phase. Raman results show F2g mode at ~466 cm-1 and defect peak at 489 cm-1 for film that deposited on LAO substrates, full width at half maximum (FWHM) is increasing with Fe doping for films deposited on both the substrates.

scholarly journals Dielectric and Raman studies of Ba0.06(Na1/2Bi1/2)0.94TiO3–NaNbO3 ceramics

2016 ◽  
Vol 34 (2) ◽  
pp. 437-445 ◽  
Author(s):  
Sumit K. Roy ◽  
S. Chaudhuri ◽  
R.K. Kotnala ◽  
D.K. Singh ◽  
B.P. Singh ◽  
...  
Keyword(s):  
Single Phase ◽  
Solid State Reaction Method ◽  
Lead Free ◽  
Orthorhombic Symmetry ◽  
Dielectric Studies ◽  
X Ray Diffraction ◽  
Reaction Method ◽  
X Ray ◽  
New Phase ◽  
Diffusivity Parameter

AbstractIn this work the X-ray diffraction, scanning electron microscopy, Raman and dielectric studies of lead free perovskite (1 – x)Ba0.06(Na1/2Bi1/2)0.94TiO3–xNaNbO3 (0 ⩽ x ⩽ 1.0) ceramics, prepared using a standard solid state reaction method, were investigated. X-ray diffraction studies of all the ceramics suggested the formation of single phase with crystal structure transforming from rhombohedral-tetragonal to orthorhombic symmetry with the increase in NaNbO3 content. Raman spectra also confirmed the formation of solid solution without any new phase. Dielectric studies showed that the phase transition is of diffusive character and diffusivity parameter decreases with increasing NaNbO3 content. The compositional fluctuation was considered to be the main cause of diffusivity.

On the problem of overlapping ω scans measured on thin films deposited on monocrystal substrates

1999 ◽  
Vol 32 (4) ◽  
pp. 736-743 ◽  
Author(s):  
D. Machajdík ◽  
A. Pevala ◽  
A. Rosová ◽  
K. Fröhlich ◽  
J. Šouc ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Spectral Characteristics ◽  
Full Width ◽  
X Ray Diffraction ◽  
Resolution Function ◽  
High Quality ◽  
Experimental Procedure ◽  
X Ray ◽  
Crystallographic Planes

CeO2thin films deposited on sapphire monocrystal substrates were used for an experimental study of the nature of extremely narrow overlapped maxima on X-ray diffraction ω scans. Full width at half-maximum (FWHM) values of such maxima typically reached the resolution function of the diffractometer. A comparative study of the influence of various diffractometer set-ups on the spectral characteristics of the X-ray beam in relation to the above-mentioned phenomenon was carried out. A surrounding (λmin− λmax) or (2θmin− 2θmax) of the strong substrate reflection was obtained, where a substrate contribution to an ω scan measured on thin-film reflection can be expected. Two possible origins of the narrow maxima are discussed: (a) a contribution of a part of the X-ray beam having λ ≠ λKαthat diffracts on a set of substrate crystallographic planes parallel to the thin-film crystallographic planes used for the ω-scan measurement; and (b) the presence in part of the thin film of a perfect monocrystal-like quality with practically no mosaicity. The principles of this approach and experimental procedure are reported, and on this basis it is possible to distinguish between the two possible origins of the narrow overlapped maxima. It is shown that under appropriate conditions, an extremely high quality CeO2thin film can be grown. The FWHM value of its ω scan can reach the value of diffractometer instrumental broadening obtained for a perfect monocrystal.

Thermoelectric Properties of C-Axis-Oriented Ca3Co4O9+δ Films Grown on MgO-Buffered Si (100) by PLD Technique

2010 ◽  
Vol 29-32 ◽  
pp. 1913-1918
Author(s):  
Xia Zhang ◽  
Hong Chen ◽  
Qiu Hui Liao ◽  
Xia Li
Keyword(s):  
Thin Films ◽  
State Of The Art ◽  
Pulsed Laser ◽  
Buffer Layers ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
High Quality ◽  
X Ray ◽  
Current State ◽  
Good Crystallinity

High-quality c-axis-oriented Ca3Co4O9+δ thin films have been grown directly on Si (100) wafers with inserting MgO buffer layers by pulsed-laser deposition (PLD). X-ray diffraction and scan electron microscopy show good crystallinity of the Ca3Co4O9+δ films. The resistivity and Seebeck coefficient of the Ca3Co4O9+δ thin films on Si (100) substrates are 9.8 mΩcm and 189 μV/K at the temperature of 500K, respectively, comparable to the single-crystal samples. This advance demonstrates the possibility of integrating the cobaltate-based high thermoelectric materials with the current state-of-the-art silicon technology for thermoelectricity-on-a-chip applications.

HIGH-QUALITY Tl2Ba2Ca2Cu3O10 THIN FILMS FABRICATED VIA LASER ABLATION

1993 ◽  
Vol 07 (01) ◽  
pp. 19-23 ◽  
Author(s):  
W. A. LUO ◽  
Y. Q. TANG ◽  
Y. Z. CHEN ◽  
I. N. CHAN ◽  
K. Y. CHEN ◽  
...  
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Critical Current Density ◽  
Current Density ◽  
Superconducting Thin Films ◽  
X Ray Diffraction ◽  
High Quality ◽  
Step Process ◽  
X Ray ◽  
Zero Resistance

In this letter, we describe results obtained via laser ablation to fabricate Tl 2 Ba 2 Ca 2 Cu 3- O 10 superconducting thin films using a two-step process. We found that the zero-resistance temperatures are up to 121 K, while the onset temperatures are up to 125 K. The T c and J c are mainly determined by a non-contact new technique for high-T c films. The typical critical current density, J c , is about 106 A/cm 2 at 77 K. X-ray diffraction showed that the superconducting thin films are nearly single 2223 phase and are highly oriented.

The Effects of Selenization Temperature on the Properties of CIGS Thin Film Prepared by Cu-In-Ga-Se Precursors

2012 ◽  
Vol 528 ◽  
pp. 214-218
Author(s):  
Han Bin Wang ◽  
Xi Jian Zhang ◽  
Qing Pu Wang ◽  
Xue Yan Zhang ◽  
Xiao Yu Liu
Keyword(s):  
Thin Films ◽  
Soda Lime ◽  
Soda Lime Glass ◽  
X Ray Diffraction ◽  
X Ray ◽  
Degree Of Reaction ◽  
N2 Atmosphere ◽  
Cigs Thin Film ◽  
Morphology Of Films ◽  
Selenization Temperature

CIGS thin films were prepared by selenization of Cu-In-Ga-Se precursors, as a new method, the effects of selenization temperature on the properties of CIGS thin films were studied. First, Cu-In-Ga-Se precursors were deposited onto Mo-coated soda lime glass by evaporation and sputtering method. Then, precursors were selenized at various temperatures in N2 atmosphere for 120 min to form CIGS thin films. The degree of reaction and morphology of films as a function of selenization temperature were analyzed. By means of field emission scanning electron microscope (SEM) and X-ray diffraction (XRD), it was found that CIGS thin films selenized at 450°C exhibit chalcopyrite phase with preferred orientation along the (112) plane.

Tailoring of Multiferroic Properties of BiFeO3 Thin Films by Cation Substitution

2010 ◽  
Vol 442 ◽  
pp. 102-108 ◽  
Author(s):  
M.S. Awan ◽  
A.S. Bhatti ◽  
S. Qing ◽  
C.K. Ong
Keyword(s):  
Thin Films ◽  
Single Phase ◽  
Bottom Electrode ◽  
X Ray Diffraction ◽  
Free Surfaces ◽  
X Ray ◽  
Atomic Force ◽  
Magnetization Saturation ◽  
Multiferroic Bifeo3 ◽  
Mn Doped

Mn-doped multiferroic BiFeO3 (BFMO) thin films were deposited on LaNiO3(LNO)/SrTiO3(STO)/Si(100) substrates by pulsed laser deposition (PLD) technique. X-ray diffraction (XRD) showed that films were bicrystalline single phase with (110) preferential orientation. Multiferroic top layer and oxide bottom electrode (LNO) epitaxially followed the buffer layer (STO). Oxygen partial pressure during deposition proved to be critical for phase formation, crystallinity and resistivity of the films. Atomic force microscopic (AFM) studies revealed the smooth, dense and crack free surfaces of the films. Cross-section view of the multilayers by field emission scanning electron microscope (FE-SEM) gave their thickness. Mn substitution resulted in the increase of magnetization saturation, coercive field and clarity of hysteresis loop. The magneto-electric (ME) effect was demonstrated by measuring the dielectric response in a varying magnetic field. Optimally deposited BFMO films show saturated P-E loop.

The location and effects of Si in (Ti1–xSix)Ny thin films

2009 ◽  
Vol 24 (8) ◽  
pp. 2483-2498 ◽  
Author(s):  
Axel Flink ◽  
Manfred Beckers ◽  
Jacob Sjölén ◽  
Tommy Larsson ◽  
Slawomir Braun ◽  
...  
Keyword(s):  
Thin Films ◽  
Grain Boundaries ◽  
Photoelectron Spectroscopy ◽  
Single Phase ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Arc Evaporation ◽  
Annealing Experiments ◽  
Tissue Phase

(Ti1–xSix)Ny (0 ≤ x ≤ 0.20; 0.99 ≤ y(x) ≤ 1.13) thin films deposited by arc evaporation have been investigated by analytical transmission electron microscopy, x-ray diffraction, x-ray photoelectron spectroscopy, and nanoindentation. Films with x ≤ 0.09 are single-phase cubic (Ti,Si)N solid solutions with a dense columnar microstructure. Films with x > 0.09 have a featherlike microstructure consisting of cubic TiN:Si nanocrystallite bundles separated by metastable SiNz with coherent-to-semicoherent interfaces and a dislocation density of as much as 1014 cm−2 is present. The films exhibit retained composition and hardness between 31 and 42 GPa in annealing experiments to 1000 °C due to segregation of SiNz to the grain boundaries. During annealing at 1100–1200 °C, this tissue phase thickens and transforms to amorphous SiNz. At the same time, Si and N diffuse out of the films via the grain boundaries and TiN recrystallize.

Structural, Magnetic and Magneto-tranport Properties of Reactive-sputtered Fe3O4 Thin Films

2010 ◽  
Vol 1250 ◽  
Author(s):  
Xinghua Wang ◽  
Sarjoosing Goolaup ◽  
Peng Ren ◽  
Wen Siang Lew
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Single Phase ◽  
Native Oxide ◽  
X Ray Diffraction ◽  
Verwey Transition ◽  
Electrical Measurements ◽  
Metal Insulator ◽  
X Ray ◽  
Sample Measurement

AbstractThin films of magnetite (Fe3O4) are grown on a single-crystal Si/SiO2 (100) substrate with native oxide using DC reactive sputtering technique at room tempreture (RT) and 300C. The x-ray diffraction(XRD) result shows the thermal energy during deposition enhances the crystallization of the Fe3O4 and x-ray photoelectron spectroscopy confirms the film deposited at 300C is single-phase Fe3O4 while the film deposited at RT is mostly ν-Fe2O3. The electrical measurements show that the resistivity of the Fe3O4 film increases exponentially with decreasing temperature, and exhibit a sharp metal-insulator transition at around 100 K, indicating the Verwey transition feature. The saturation magnetization Ms of Fe3O4 film measured by vibrating sample measurement (VSM) at RT was found to be 445 emu/cm3.

Microstructures of Ultrathin Films of Sputtered PbTiO3

1994 ◽  
Vol 361 ◽  
Author(s):  
Kiyotaka Wasa ◽  
T. Satoh ◽  
K. Tab Ata ◽  
H. Adachi ◽  
Y. Ichikawa ◽  
...  
Keyword(s):  
Thin Films ◽  
Surface Roughness ◽  
Ultrathin Films ◽  
Crystal Orientation ◽  
Smooth Surface ◽  
Three Dimensional ◽  
Rf Magnetron Sputtering ◽  
X Ray Diffraction ◽  
X Ray ◽  
Dimensional Crystal

ABSTRACTUltrathin films of perovskite PbTiO3, 10–100nm thick, were epitaxially grown on miscut (001)SrTiO3 substrate by rf-magnetron sputtering at 600°C. The electron microscope and high resolution x-ray diffraction analysis suggested the evidence of epitaxial growth of (001)PbTiO3/(001)SrTiO3 with three dimensional crystal orientation. The stoichiometric film shows extremely smooth surface with the surface roughness less than 3nm. Deposition on a miscut substrate under stoichiometric conditions is essential to make continuous thin films of single crystal perovskite PbTiO3.

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